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Informazione Riservata
“NEW TECHNOLOGY FOR CONVERTING
HEAT TO ELECTRIC ENERGY AND FOR
COOLING”
THE MDSM THERMOELECTRIC CONVERTER
Gevork Karapet’yan Yakovlevich
Russian Southern Federal University
Vorovich Research Institute of Mechanics and Applied Mathematics

CV and SCIENTIFIC EXPERIENCE
Name:
Gevork Karapet’yan Yakovlevich
Place of work and role:
Southern Federal University since 1972 and, since 1976, scientist at the Vorovich Research
Institute of Mechanics and Applied Mathematics. Currently he has the role of Senior Scientist.
Scientific activities, patents and awards:
Higher education, Rostov State University (1972), radiophysicist, Ph.D (2011, “Research of the
surface acoustic wave (SAW) unidirectional interdigital transducers (IDT) and IDT with weakly
overlapped electrodes and the development of frequency selection devices based on them”
(specialty 05.27.01 - "Solid-state electronics, radio-electronic components, micro- and nano-
electronics based on quantum effects”). Protection dissertation was in 17.06.2011 in the Yaroslav
Wise Novgorod State University).
During this time, Dr. Gevork Karapet’yan gave a great contribution in many scientific researches.
He was responsible executor in most researches and was the head of one of the researches
performed by the Laboratory of Acoustical Electronics.
He wrote over 50 articles, reports, abstracts and one monograph.
He received 10 USSR inventor certificates and 14 Russian patents.
He was awarded with the title «USSR Inventor» and, in 2010 he was awarded by the Ministry of
Education of the Russian Federation «For big personal contribution to development of national
science».
He was among finalists of the competition BIT-South 2012 ("Business of innovative technologies"
held at Astrakhan State Technical University).
Karapetyan G. Ya is “Russian Federal expert” in the scientific and technical sphere (2012-2015).

Specializations:
Karapetyan Gevork Ya. works out scientific researches in the field of
surface acoustic waves and thermoelectric devices.
Business experience:
In the year 1990 Karapetyan G. Ya. took part in organizing a small
enterprise "Piezotron", for the serial production of television SAW filters
and narrow-band rejected SAW filters for systems of closing of TV of
channels. Some tens of thousands such filters have been processed and
sold.
In 2002-2003 Karapetyan G. Ya. took active part in working out and at
the organization of a serial production of impedance SAW filters for TV
channels at Ltd Company “Elion” (Volgodonsk). More than 10,000 of
such filters have been processed for various channels.
Current Scientific research
He is currently focused on scientific research in the field of
thermoelectric devices.
CV and SCIENTIFIC EXPERIENCE

The MSDM thermoelectric converter
The research that led to the invention of the proposed
converter started in 2001, when he received fundings and was
named responsible executor for the project "Research of
Influence of Magnetic Field on ThermoEMF in InSb (Indium
antimonide)".
Thermo EMF under the action of magnetic field changed very
much (almost 7 times) while the Peltier coefficient changed
insignificantly (no more than 37 μV/K, i.e.no more than 10%).
The MSDM thermoelectric
converter

The existing scientific potential
Current
source
Т1
Т2
dielectric
semiconductor
We conducted researches on transformation of thermal energy into electric one. It has been shown
that by means of the capacitor in which one of facings had thermoelectric junction, it was possible to
transform thermal energy into electric one with efficiency close to 100%, as thermo-electromotive
force changed under external field at charge or discharge of such capacitor. It has been shown that
thermo-electromotive force could be changed by means of a magnetic field. The original set-up has
been developed for measurement of the influence of the magnetic field on thermo-electromotive
force and Peltier factor in semi-conductor crystals. Moreover, the dependence of thermo-
electromotive force in crystals InSb was investigated under magnetic field. It has been shown that
the magnetic field changed 7 times the thermo-electromotive force in InSb, while the Peltier factor
changed 5% when changing the induction of the magnetic field from – 0.2 Т up to 0.2 Т.

The existing scientific potential
In the case of a thermoelectric generator, the transmission of heat from the hot
end to the cold one, due to the Peltier effect will not correspond to the maximum
coefficient of thermal EMF, and will be equal to coefficient of thermoEMF in the
absence of a magnetic field, which is almost two times lower, that lead to
increased efficiency of the generator so as to decrease the flow of heat from the
hot end to the cold. In the case of a refrigerator occurs spurious thermoEMF
because of a difference of temperatures due to cooling. Therefore it must select
the value and sign of the magnetic field in such a way that thermoEMF would be
minimal. Then spurious thermoEMF will decrease, which will lead to reduction of
power consumption. So for example, if a magnetic field of 0.1T is applied, thermal
EMF will decrease to 50 µV/K, while the Peltier effect, which is responsible for the
cooling effect, almost did not change. So the power required to overcome the
parasitic thermoEMF will be reduced almost in 5 times, which will lead to a
considerable increase in the efficiency of the refrigerator, as the power required to
overcome the parasitic thermoEMF, is one of the main factors determining the
refrigerator power consumption.
The realization of a thermoelectric converter on the basis of a variable magnetic
field would be very difficult, as for creating magnetic fields with an induction 0.1-
0.2Т ferromagnetic magnetic circuits or superconducting magnets are required.
Creation a variable magnetic field it is possible also by means of permanent
magnets, moving about thermoelectric capacitors. At the same time change of
electric field in semiconductors of all to some volt can change considerably energy
electrons because of a curvature of power zones that leads to considerable change
of the thermo electromotive force and Peltier factor. Therefore the purpose of the
present project is working out of a design of the converter, using electric field for
change thermo electromotive force in MDSM structures.

Introduction
Fig. 1. The semiconductor thermoelectric
cooler (converter) of old type with hot and
cold sides.
Fig. 2. The semiconductor thermoelectric cooler
(converter) of novel type without hot side.
Fig. 3. LED matrix without the
semiconductor thermoelectric cooler
Fig. 4. LED matrix with new type of semiconductor
thermoelectric cooler and decreased energy consumption.

Real world application samples

Fig. 1. Metal-dielectric-semiconductor-metal (MDSM) structure for new type thermoelectric
converter
Description of Cooler
Fig.2. Equivalent circuit of
MDSM structure
Fig.3. The potential diagram of no charged
thermoelectric capacitor.
dielectric

0k U+U=u+
dt
du
RC (1) 0k U+U+
RC
t
A=tu 





exp)( (2) kU+
RC
t
U=tu 











 exp1)( 0
(3)
Fig.4. The potential diagram of
charged thermoelectric capacitor.
At the initial moment the capacitor is charged to Uk, therefore A =U0
C
UU+U
=UCU+
CU
=dtRC
t
e
R
UU
+dtRC
t
e
R
U
)RC
t
e(U=uidt=W k
k
2
0k
C
2
2
2
1 0
2
0
0 0 0
0
00
0  
   
 (4) (5)
(6)
where is the energy obtained by the capacitor from a source of voltage, СU0Uk is the energy absorbed
from the environment
CU0
2
2
ΔU= Uk – Uk1
Concept
Uk>>Uk1
RW - energy on resistor
CW - energy on capacitor
kW- - energy, absorbed in
сontact bottom electrode2
-semiconductor
W R=∫
0
∞
i2
Rdt =
CU0
2
2
W k= U k∫
0
∞
idt= CU k U 0
+
Uk
Uk1 Uk1
ΔU

Fig.1. The potential diagram of charged thermoelectric capacitor.
Q1 - heat absorbed in touch
bottom electrode and substrate
i – current in circuit
Q2 - the heat evolved in the
contact surface charge9 and
metal 3
Since Q1 >> Q2 MDSM
structure is cooled.
Fig.2. MDSM structure – voltage source
Concept

Concept
Q=Q2-Q2
Q=Q3+Q4
U
k
Uk
UK
M
Q
Q
1
Q
2
M п/п М п/п
М п/п
Q3
Q4
UK
M
a
b
c
Ec
F
Ei
Ev
Fig.1. Energetic diagrams
Fig.2. Energy chart series-connected capacitors
Fig.3. Energy chart s capacitor with
dielectric and semiconductor
Fig.4. Energy chart at the dielectric-
semiconductor on fig.3
Fig.5.Energy chart at the
dielectric-semiconductor on fig.2,
if instead of dielectric left to take
a semiconductor.

Concept
earth
air
water
metal3
Fig.1.Fermi level in near surface charge
Fig.2.Sun is heat source on Earth
Fig.3. Conversion of environmental heat into electrical energy
schema.
Q
Q

Cooler power
ΔU=0.1V
Rin=RL+Rnsch , RL=10  , Rnsch =100 
Rin- internal resistance, RL - resistance high impedance part of a thickness of 10
microns, Rnsch - resistance of near surface charge thickness of 5 nm and length
of 100 microns.
For charge capacitor+
_
+
_

Cooler power
Rin= 0.011 
P=500W, Each of the 1000 structure is
a structure that contains 10000
individual structures 0.1х0.1 mm
Three-layer structure
_
+

Use MDSM structures as a Thermoelectric Generator
for Wearable Sensor Nodes
As follows from the slide 15 unit structure has output voltage 0.1 V internal resistance of
110 Ohm. To obtain the voltage in 3 volts, which is necessary for the operation of wireless
sensors, it is necessary to connect consistently 30 of such individual structures. In this
case, the internal resistance is equal to 3300 Ohm. Because power for wireless sensors
around 20 microwatts, when the voltage of 3 V current is equal approximately 7 micro
amps. When this current on internal resistance patterns voltage drop will be equal to 23
mV, which is much less than 3 V and it can be neglected. Thus, the power supply on the
basis of individual structures will have a size 3х0.1 mm. in addition, the voltage will vary
with the temperature will allow to use the structure as a temperature sensor.

For the manufacturing of the proposed МDSM structures the following
equipment is needed:
1. Equipment for production of photomasks with a resolution of 1
micron.
2. Equipment for cleaning of crystals with a diameter of 100 mm and
more
3. Equipment for photolithography with precision alignment 1 micron or
less, for crystals with a diameter of 100 mm and more.
4. Vacuum installations, enabling the spraying of metals, diffusion, ion
etching for crystals with a diameter more than 100 mm
5. Installation for cutting of crystals.
6. Installation for connecting the contacts of the received microcircuits.
MDSM structures manufacturing

Powering and cooling 1.000 LEDs
Cost estimation
Taking into account that the converter consists of 3 layers, the cost of silicon for the manufacture of the
converter for cooling 1,000 LEDs with power of 0.5 W each will be equal to $2.5х3х3=$22.5. Taking
into account a cost of manufacture of the MDSM structures, the cost of this cooler can be estimated as
$100-150. However, note that such cooler in addition to cooling produces electricity to power the
LEDs. But silicon discs worth 2.5$ (made in China) are not polished. And for the manufacture of
VLGV structures, polished disks are needed. Polished disks with the diameter of 150 mm are available
at 10-12$. Therefore, to manufacture a sandwich 10x10 cm 18 discs are needed. Then the cost of a
Converter with the power of 500 W has been estimated as 250-300$.
(10$) (10$) (10$)

LAST STAGES OF R&D WORK
AND FIRST PROTOTYPE
1. Development of theoretical grounds for a new class of cooling elements
able to transform the ambient thermal energy into electric energy, with the
help of a mathematical model of the way the new, semiconductor based,
thermoelectric converter, works.
2. Determination of optimal topology of the MDSM structure based on
research of operation modes of the Converter with the help of the
mathematical model.
3. R&D and processing of photo-masks for manufacture of the required
MDSM structure.
4. Development of the processing technique of MDSM structures, working
under the condition of saturation mode.
5. Fabrication and research of sample of the MDSM structure (prototype).
6. Manufacture of the power unit source with power no greater than 1 W
based on the matrix of MDSM structures.

Cost estimates for manufacture of a prototype.
TOTAL 12 $50 000
Number
of stage
Title of the work on the main stages of R & D Execution work
time, months
Cost of the work step,
$
1. Manufacturing of MDSM-structure operating in the saturation
regime
3 25 000
1.1. Calculation and production of photo-masks for
the manufacture of MDSM-structures
1 6 250
1.2. Technology development and manufacture of the MDSM-
structures operating in the saturation regime
2 18 750
2. Testing of the processed MDSM-structures 3 6 250
2.1. Design and manufacture of set-up for testing the MDSM-
structures
1 3 125
2.2. Testing the single MDSM-structures 2 3 125
3. Investigation of MDSM-structures 3 6 250
3.1. Investigation of the dependence of the output voltage from
the temperature in MDSM-structures
1 3 125
3.2. Measurement of internal resistance of MDSM-structures 2 3 125
4. Manufacture of advanced thermoelectric
converter
3 12 500
4.1. Research of work of a sequential-parallel-connected MDSM-
structures
1 6 250
4.2. Study of the circuit, obtainment of cooling regime 2 6 250

CURRENT SITUATION AND
PROGRESS
1. At present offered a thermoelectric Converter is at the stage when developed working
drawings, specified materials necessary for the manufacture of the Converter, and the
equipment needed for its production. Designed and built a stand for the measurement of
electrical drive parameters, and, are defined, where it is possible to make an experimental
batch converters.
2. Conducted theoretical research and justified the operation of this Converter as a source
of electrical energy. As a result of recent experiments with field-effect transistors
experimentally obtained excess power to the resistors on 10% (which is well above the
measurement error) due to the absorption of ambient heat.
3. The firm STMicroelectronics made the first version of the prototype, but due to the fact
that MDSM structures is made with considerable deviation from the desired prototype it
needs to be redone. Due to the significant production capacity utilization production time
of prototype still undefined.
4. The results were published in scientific journals indexed in scientific databases Web of
Science, Scopuc and RSCI. The rating RSR – BB.
5. Received the international application PCTRU2012/000240 publ. 10.10. 2013 No.
WO/2013/151452

“NEW TECNOLOGY FOR CONVERTING
THERMAL TO ELECTRIC ENERGY AND
FOR COOLING”
Thank you for your attention !

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