This ppt is for only overview of topic

1. Construction of silicon cell

2. Construction
• Made from N type and P type silicon semiconductor sliced in
thin wafers
• Thickness about 300mm and less
• Circular in shape with diameter 6 to 8mm
• Anti reflecting coating of silver oxide
• Charge collecting grid of titanium silver
• Electricity flow through the charge collecting grid to terminal to
external circuit
• Protecting coating provided

3. (1) Band energy gap
• IT IS PRINCIPLE OF CONVERSION OF SOLAR ENERGY INTO HEAT ENERGY
• IF PHOTONS ENERGY < BAND ENERGY GAP THAN SEMICONDUCTOR
UNABLE TO ABSORB ENERGY
• IF PHOTONS ENERGY > BAND ENERGY GAP THAN SEMICONDUCTOR ABLE
TO ABSORB ENERGY
• EFFICIENCY OF SOLAR CELL IS ABOUT 10-15%

4. (2) CURRENT VOLTAGE
CHARACTERISTIC
• MAXIMUM USABLE POWER IS Vm Im
• THEORITICAL POWER IS VOC ISC
• FILL FACTOR = MAX USABLE POWER / THEORITICAL
POWER

5. (3) EFFECT OF TEMP ON
EFFICIENCY OF SOLAR CELL
• RADIATION IS MORE  ELECTRIC ENERGY IS MORE
• INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE
EFFICIENCY DECREASES
• TEMP. TOLERANCE 200 ͦC
• LIFE OF SEMICONDUCTOR

6. (3) EFFECT OF TEMP ON
EFFICIENCY OF SOLAR CELL
• RADIATION IS MORE  ELECTRIC ENERGY IS MORE
• INITIALLY GIVES MORE ENERGY AFTER TEMP INCREASE
EFFICIENCY DECREASES
• TEMP. TOLERANCE 200 ͦC
• LIFE OF SEMICONDUCTOR