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Scanning Tunneling Microscopy
09TT20 CHARACTERIZATION OF TEXTILE
POLYMERS
Presentation I
S.Dhandapani – 11MT62
Introduction
 Invented by Binnig and Rohrer at IBM in 1981 (Nobel Prize
in Physics in 1986).
 Binnig also invented the Atomic Force Microscope(AFM) at
Stanford University in 1986.
Introduction
 Topographic (real space) images
 Spectroscopic (electronic structure, density of states)
images
Introduction
 Scanning tunneling microscopy is a microscopical
technique that allows the investigation of electrically
conducting surfaces down to the atomic scale.
 Atomic resolution, several orders of magnitude better than
the best electron microscope.
 Quantum mechanical tunnel-effect of electron.
 Material science, physics, semiconductor science,
metallurgy, electrochemistry, and molecular biology.
Working Principle of STM
 In the scanning tunneling microscope the sample is
scanned by a very fine metallic tip.
 The tip is mechanically connected to the scanner, an
XYZ positioning device realized by means of
piezoelectric materials.
 The sample is positively or negatively biased so that a
small current, the "tunneling current" flows if the tip is in
contact to the sample.
Working Principle of STM
 A sharp conductive tip is brought to within a few
Angstroms of the surface of a conductor (sample).
 The surface is applied a bias voltage, Fermi levels shift.
 The wave functions of the electrons in the tip overlap
those of the sample surface.
 Electrons tunnel from one surface to the other of lower
potential.
 The tunneling system can be described as the model of
quantum mechanical electron tunneling between two
infinite, parallel, plane metal surfaces
Working Principle of STM
 This feeble tunneling current is amplified and measured.
 With the help of the tunneling current the feedback
electronic keeps the distance between tip and sample
constant.
 If the tunneling current exceeds its preset value, the
distance between tip and sample is decreased, if it falls
below this value, the feedback increases the distance.
 The tip is scanned line by line above the sample surface
following the topography of the sample.
Experimental methods
 the sample you want to study
 a sharp tip mounted on a
piezoelectric crystal tube to
be placed in very close
proximity to the sample
 a mechanism to control the
location of the tip in the x-y
plane parallel to the sample
surface
 a feedback loop to control
the height of the tip above
the sample (the z-axis)
Basic Set-up
Tunneling Tips
Cut platinum – iridium wires
Tungsten wire electrochemically etched
Tungsten sharpened with ion milling
Best tips have a point a few
hundred nm wide
In reality is relatively easy to obtain such tips by etching or tearing a thin
metal wire.
Very small changes in the tip-sample separation induce large changes in
the tunneling current.
How to operate?
 Raster the tip across the
surface, and using the
current as a feedback
signal.
 The tip-surface
separation is controlled
to be constant by
keeping the tunneling
current at a constant
value.
 The voltage necessary
to keep the tip at a
constant separation is
used to produce a
computer image of the
surface.
Two Modes of Scanning
Constant
Height Mode
Constant
Current Mode
Usually, constant current mode is superior.
Tunneling Current
 The reason for the extreme magnification capabilities of
the STM down to the atomic scale can be found in the
physical behavior of the tunneling current.
 The tunneling current flows across the small gap that
separates the tip from the sample,in better approach of
quantum mechanics the electrons are "tunneling" across
the gap.
 The tunneling current I has a very important
characteristic: it exhibits an exponentially decay with an
increase of the gap d.
I= K*U*e -(k*d) k and K are constants, U is the
tunneling bias
Tip-sample tunneling contact
Exponential behavior of the
tunneling current I with distance d
STM Tips
 Tunneling current
depends on the distance
between the STM probe
and the sample
Surface
Tunneling current depends on
distance between tip and surface
Tunneling Current
• It shows a cross section of a
sample surface with two surface
atoms being replaced by foreign
atoms, for instance adsorbates
(black).
• While at low bias (red) the tip may
follow the "actual" topography,
there may also be a bias where no
contrast is obtained (green) or a
bump is seen above the
adsorbates (blue).
• This bias dependent imaging is
used to create the color images:
three individual STM images of the
same sample area are obtained at
different tunneling bias.
Advantages
 No damage to the sample
 Vertical resolution superior
to SEM
 Spectroscopy of individual
atoms
 Relatively Low
Cost
Disadvantages
 Samples limited to conductors
and semiconductors
 Limited Biological Applications:
AFM
 Generally a difficult
technique to perform
Figures of Merit
Maximum Field of View: 100 μm
Maximum Lateral
Resolution: 1 Å
Maximum Vertical
Resolution: .1 Å
Interesting Images with STM
Copper Surface
Xenon on Nickel
Single atom
lithography
Iron on Copper
Quantum Corrals
Imaging the standing wave created by interaction of species
Carbon Monoxide Man: CO on Platinum
Graphite is a good example!
 STM images of graphite
 Structure of graphite
 Overlay of structure shows only
every other atom is imaged
Thank you
Basic Principles of STM
Electrons tunnel between the tip and sample, a small current I is
generated (10 pA to 1 nA).
I proportional to e-2κd
, I decreases by a factor of 10 when d is
increased by 1 Å.
 d ~ 6
Å
Bias voltage:
Instrumental Design: Controlling the Tip
Raster scanning
Precise tip control is achieved with
Piezoelectrics
Displacement accurate to ± .05 Å

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Stm 07.08.13

  • 1. Scanning Tunneling Microscopy 09TT20 CHARACTERIZATION OF TEXTILE POLYMERS Presentation I S.Dhandapani – 11MT62
  • 2. Introduction  Invented by Binnig and Rohrer at IBM in 1981 (Nobel Prize in Physics in 1986).  Binnig also invented the Atomic Force Microscope(AFM) at Stanford University in 1986.
  • 3. Introduction  Topographic (real space) images  Spectroscopic (electronic structure, density of states) images
  • 4. Introduction  Scanning tunneling microscopy is a microscopical technique that allows the investigation of electrically conducting surfaces down to the atomic scale.  Atomic resolution, several orders of magnitude better than the best electron microscope.  Quantum mechanical tunnel-effect of electron.  Material science, physics, semiconductor science, metallurgy, electrochemistry, and molecular biology.
  • 5. Working Principle of STM  In the scanning tunneling microscope the sample is scanned by a very fine metallic tip.  The tip is mechanically connected to the scanner, an XYZ positioning device realized by means of piezoelectric materials.  The sample is positively or negatively biased so that a small current, the "tunneling current" flows if the tip is in contact to the sample.
  • 6. Working Principle of STM  A sharp conductive tip is brought to within a few Angstroms of the surface of a conductor (sample).  The surface is applied a bias voltage, Fermi levels shift.  The wave functions of the electrons in the tip overlap those of the sample surface.  Electrons tunnel from one surface to the other of lower potential.  The tunneling system can be described as the model of quantum mechanical electron tunneling between two infinite, parallel, plane metal surfaces
  • 7.
  • 8. Working Principle of STM  This feeble tunneling current is amplified and measured.  With the help of the tunneling current the feedback electronic keeps the distance between tip and sample constant.  If the tunneling current exceeds its preset value, the distance between tip and sample is decreased, if it falls below this value, the feedback increases the distance.  The tip is scanned line by line above the sample surface following the topography of the sample.
  • 9. Experimental methods  the sample you want to study  a sharp tip mounted on a piezoelectric crystal tube to be placed in very close proximity to the sample  a mechanism to control the location of the tip in the x-y plane parallel to the sample surface  a feedback loop to control the height of the tip above the sample (the z-axis) Basic Set-up
  • 10. Tunneling Tips Cut platinum – iridium wires Tungsten wire electrochemically etched Tungsten sharpened with ion milling Best tips have a point a few hundred nm wide In reality is relatively easy to obtain such tips by etching or tearing a thin metal wire. Very small changes in the tip-sample separation induce large changes in the tunneling current.
  • 11. How to operate?  Raster the tip across the surface, and using the current as a feedback signal.  The tip-surface separation is controlled to be constant by keeping the tunneling current at a constant value.  The voltage necessary to keep the tip at a constant separation is used to produce a computer image of the surface.
  • 12. Two Modes of Scanning Constant Height Mode Constant Current Mode Usually, constant current mode is superior.
  • 13. Tunneling Current  The reason for the extreme magnification capabilities of the STM down to the atomic scale can be found in the physical behavior of the tunneling current.  The tunneling current flows across the small gap that separates the tip from the sample,in better approach of quantum mechanics the electrons are "tunneling" across the gap.  The tunneling current I has a very important characteristic: it exhibits an exponentially decay with an increase of the gap d.
  • 14. I= K*U*e -(k*d) k and K are constants, U is the tunneling bias Tip-sample tunneling contact Exponential behavior of the tunneling current I with distance d
  • 15. STM Tips  Tunneling current depends on the distance between the STM probe and the sample Surface Tunneling current depends on distance between tip and surface
  • 16. Tunneling Current • It shows a cross section of a sample surface with two surface atoms being replaced by foreign atoms, for instance adsorbates (black). • While at low bias (red) the tip may follow the "actual" topography, there may also be a bias where no contrast is obtained (green) or a bump is seen above the adsorbates (blue). • This bias dependent imaging is used to create the color images: three individual STM images of the same sample area are obtained at different tunneling bias.
  • 17. Advantages  No damage to the sample  Vertical resolution superior to SEM  Spectroscopy of individual atoms  Relatively Low Cost Disadvantages  Samples limited to conductors and semiconductors  Limited Biological Applications: AFM  Generally a difficult technique to perform Figures of Merit Maximum Field of View: 100 μm Maximum Lateral Resolution: 1 Å Maximum Vertical Resolution: .1 Å
  • 18. Interesting Images with STM Copper Surface Xenon on Nickel Single atom lithography
  • 19. Iron on Copper Quantum Corrals Imaging the standing wave created by interaction of species
  • 20. Carbon Monoxide Man: CO on Platinum
  • 21. Graphite is a good example!  STM images of graphite  Structure of graphite  Overlay of structure shows only every other atom is imaged
  • 23. Basic Principles of STM Electrons tunnel between the tip and sample, a small current I is generated (10 pA to 1 nA). I proportional to e-2κd , I decreases by a factor of 10 when d is increased by 1 Å.  d ~ 6 Å Bias voltage:
  • 24. Instrumental Design: Controlling the Tip Raster scanning Precise tip control is achieved with Piezoelectrics Displacement accurate to ± .05 Å