1SR153-400_110C PSpice Model (Free SPICE Model)

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
COMPONENTS:
DIODE/ GENERAL PURPOSE RECTIFIER / STANDARD
PART NUMBER: 1SR153-400
MANUFACTURER: ROHM
REMARK: TC=110C
Device Modeling Report
Bee Technologies Inc.

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
SPICE MODEL
PSpice model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
*$
PART NUMBER: 1SR153-400
* MANUFACTURER: ROHM
* VRM=400,TC=110C,IO=1A,IFSM=30A
* All Rights Reserved Copyright (C) Bee Technologies Inc.2004
.MODEL 1SR153-400_110C D
+ IS=1.0000E-6
+ N=1.8319
+ RS=.13747
+ IKF=3.2936E-3
+ ISR=0
+ CJO=16.428E-12
+ M=.3102
+ VJ=.4121
+ BV=400
+ IBV=10
+ TT=370.10E-9
*$

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic Reference

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V1
0Vdc
0
R1
0.01m
D1
1SR153-400_110C
Forward Current Characteristic
Circuit Simulation Result
Evaluation Circuit

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Ifwd(A)
Vfwd(V)
Measurement
Vfwd(V)
Simulation
%Error
0.01 0.488 0.494 -1.23
0.02 0.566 0.558 1.41
0.05 0.648 0.648 0.00
0.1 0.718 0.721 -0.42
0.2 0.802 0.800 0.25
0.5 0.930 0.929 0.11
1 1.062 1.062 0.00

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
0
V1
TD = 0
TF = 10ns
PW = 5us
PER = 10us
V1 = 0
TR = 1us
V2 = 400V
D1
1SR153-400_110C
V2
0Vdc
Capacitance Characteristic
Circuit Simulation Result
Evaluation Circuit

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph
Circuit Simulation Result
Simulation Result
Vrev(V)
Cj(pF)
Measurement
Cj(pF)
Simulation
%Error
0 16.520 16.520 0.00
0.1 15.361 15.850 -3.18
0.2 14.417 14.709 -2.03
0.5 12.695 12.842 -1.16
1 11.251 11.178 0.65
2 9.625 9.519 1.10
5 7.513 7.381 1.76
10 6.034 6.042 -0.13
20 4.844 4.896 -1.07
50 3.652 3.703 -1.40
100 2.918 2.989 -2.43

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
V1
TD = 0
TF = 10ns
PW = 20us
PER = 50us
V1 = -9.2V
TR = 10ns
V2 = 10.8V
R1
50
D1
1SR153-400_110C
0
Reverse Recovery Characteristic
Circuit Simulation Result
Evaluation Circuit
Compare Measurement vs. Simulation
Measurement Simulation %Error
trr 260.00 ns 260.40 ns 0.15

9. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Reverse Recovery Characteristic Reference
Trj =84(ns)
Trb=176(ns)
Conditions: Ifwd=Irev=0.2(A), Rl=50
Example
Relation between trj and trb
Measurement