SPICE MODEL of 2SJ683-TL-E (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SJ683-TL-E
MANUFACTURER: SANYO
Body Diode (Model Parameters) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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2. MOSFET MODEL
PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs(S)
-Id(A) Error (%)
Measurement Simulation
1 17.600 18.236 3.61
2 24.750 25.596 3.42
5 38.850 39.876 2.64
10 54.250 55.476 2.26
20 75.000 76.703 2.27
50 113.500 116.109 2.30
100 154.500 156.691 1.42
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4. Vgs-Id Characteristic
Circuit Simulation result
-120A
-100A
-80A
-60A
-40A
-20A
0A
0V -1.0V -2.0V -3.0V -4.0V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U1
2SJ683-TL-E V2
V1 -10
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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5. Comparison Graph
Circuit Simulation Result
Simulation Result
-VGS(V)
-ID(mA) Error (%)
Measurement Simulation
1 2.350 2.350 0.00
2 2.400 2.395 -0.21
5 2.490 2.487 -0.12
10 2.595 2.592 -0.12
20 2.730 2.742 0.44
40 2.940 2.962 0.75
60 3.110 3.135 0.80
80 3.270 3.284 0.43
100 3.415 3.418 0.09
120 3.550 3.541 -0.25
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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6. Rds(on) Characteristic
Circuit Simulation result
-30A
-24A
-18A
-12A
-6A
0A
0V -30mV -60mV -90mV -150mV -210mV -265mV
I(V3)
V_VDS
Evaluation circuit
V3
0Vdc
VDS
U1
2SJ683-TL-E
0Vdc
V1
-10
0
Simulation Result
ID= -33A, VGS= -10V Measurement Simulation Error (%)
R DS (on) mΩ 8.000 7.989 -0.14
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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7. Gate Charge Characteristic
Circuit Simulation result
-10V
-9V
-8V
-7V
-6V
-5V
-4V
-3V
-2V
-1V
0V
0 50n 100n 150n 200n 250n 300n
V(W1:4)
Time*1mA
Evaluation circuit
U1
2SJ683-TL-E
ION = 0uA I2
I1 = 0 IOFF = 1mA D2 65
I2 = 1m W Dbreak
TD = 0 I1 -
TR = 5n +
TF = 5n VDD
PW = 600u W1
PER = 1000u
-30
0
Simulation Result
VDD= -30V,ID= -65A
Measurement Simulation Error (%)
,VGS= -10V
Qgs nC 50.000 50.257 0.51
Qgd nC 50.000 50.437 0.87
Qg nC 290.000 192.240 -33.71
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VSD(V) Error(%)
Measurement Simulation
0.0 1200.000 1198.000 -0.17
1.0 670.000 668.000 -0.30
2.0 498.000 502.000 0.80
5.0 320.000 323.000 0.94
10.0 225.000 223.000 -0.89
15.0 180.000 179.000 -0.56
20.0 152.000 153.000 0.66
25.0 135.000 134.000 -0.74
30.0 121.000 121.800 0.66
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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9. Switching Time Characteristic
Circuit Simulation result
-14V
-12V
-10V
-8V
-6V
-4V
-2V
0V
4.0us 4.5us 5.0us 5.5us 6.0us 6.5us 7.0us 7.5us
V(U1:G) V(U1:D)/3
Time
Evaluation circuit
L2 RL
50nH 0.9
R1 L1 U1
2SJ683-TL-E VDD
PER = 20u -30.5Vdc
PW = 10u 30nH
TF = 5n 50 R2
TR = 5n 50
TD = 5u
V2 = 20 V2
V1 = 0
0
Simulation Result
ID= -33A, VDD= -30V
Measurement Simulation Error(%)
VGS=0/-10V
td(on) ns 110.000 110.012 0.01
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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10. Output Characteristic
Circuit Simulation result
-130A
-10
-120A
-8 -6
-110A
-4
-100A
-90A
-80A
-70A
-60A
-50A
VGS=-3V
-40A
-30A
-20A
-10A
0A
0V -0.2V -0.6V -1.0V -1.4V -1.8V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U1
2SJ683-TL-E V2
V1 -2
0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
100A
10A
1.0A
100mA
10mA
1.0mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(Vsense)
V_VSD
Evaluation Circuit
Vsense
0Vdc
U1
VSD 2SJ683-TL-E
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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12. Comparison Graph
Circuit Simulation Result
Simulation Result
VSD (-V)
IDR(-A) %Error
Measurement Simulation
0.001 0.470 0.468 -0.43
0.001 0.527 0.528 0.19
0.100 0.588 0.589 0.17
1.000 0.657 0.655 -0.30
2.000 0.682 0.679 -0.38
5.000 0.720 0.719 -0.14
10.000 0.755 0.756 0.13
20.000 0.800 0.799 -0.13
50.000 0.870 0.872 0.23
100.000 0.950 0.949 -0.11
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
12

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
300mA
200mA
100mA
-0mA
-100mA
-200mA
-300mA
-400mA
8.4us 9.2us 10.0us 10.8us 11.6us 12.4us
I(R1)
Time
Evaluation Circuit
R1
50
V1 = -9.4v
V2 = 10.6v V1
TD = 20ns U1
TR = 10ns 2SJ683-TL-E
TF = 10ns
PW = 1us
PER = 100us
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj ns 60.000 60.808 1.35
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
13

14. Reverse Recovery Characteristic Reference
Measurement
Trj= 60.00 (ns)
Trb=160.00 (ns)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
-10mA
-8mA
-6mA
-4mA
-2mA
0A
0V -10V -20V -30V -40V -50V
I(R1)
V_V1
Evaluation Circuit
R1
0.001m
V1
0Vdc
U1
2SJ683-TL-E R2
100MEG
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2008
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