SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK
•
0 j'aime•259 vues
SPICE MODEL of 2SK3770-01MR (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommandé
Recommandé
Contenu connexe
Tendances
Tendances (20)
Similaire à SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK
Similaire à SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK (19)
Plus de Tsuyoshi Horigome
Plus de Tsuyoshi Horigome (20)
Dernier
Dernier (20)
SPICE MODEL of 2SK3770-01MR (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Standard) PART NUMBER: 2SK3770-01MR MANUFACTURER: Fuji Electric REMARK: Body Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Transconductance Characteristic Circuit Simulation Result Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 1 4.53 4.7 3.7528 2 6.5 6.64 2.1538 5 10.25 10.11 -1.366 6 11 10.97 -0.273 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Vgs-Id Characteristic Circuit Simulation result Evaluation circuit V2 0Vdc V1 U1 V3 10Vdc 2SK3770-01MRS 25Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.2 4.955 5.05 1.9173 0.5 5.14 5.21 1.3619 1 5.3 5.33 0.566 2 5.51 5.514 0.0726 5 5.9 5.88 -0.339 6 5.97 5.976 0.1005 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Id-Rds(on) Characteristic Circuit Simulation result Evaluation circuit V2 0Vdc U1 V3 V1 2SK3770-01MRS 0Vdc 10.0Vdc 0 Simulation Result ID=13, VGS=10V Measurement Simulation Error (%) R DS (on) 63 m 63 m 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Gate Charge Characteristic Circuit Simulation result Evaluation circuit V2 0Vdc Dbreak PER = 1000u D1 PW = 600u U1 I2 TF = 10n W1 2SK3770-01MRS 26Adc TR = 10n + TD = 0 I2 = 100m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 60Vdc 0 Simulation Result VDD=60V,ID=26A Measurement Simulation Error (%) Qgs 10 nC 10.35 nC 3.5 Qgd 9 nC 9.034 nC 0.38 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 1050 1051 0.095 0.2 1040 1035 0.480 0.5 990 991 0.101 1 930 928 0.215 2 820 829 1.097 5 650 646 0.615 10 500 497 0.6 20 360 360 0 50 220 221 0.454 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Switching Time Characteristic Circuit Simulation result VDS =150 (V) VGS = 10V Evaluation circuit L1 RL 3 0.05uH 15.7 V3 0Vdc VDD 150Vdc L2 RG 2 0.03uH 12 U3 V1 = 0 V1 IRFB9N30AS 0 V2 = 10 TD = 1u TR = 6n TF = 7n PW = 3u PER = 100u 0 0 Simulation Result ID=9.3A, VDD=150V Measurement Simulation Error(%) VGS=0/10V td (on) 10 ns 10.07 ns 0.7 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Output Characteristic Circuit Simulation result 5.7V 5.6V VGS=5.5V Evaluation circuit V2 0Vdc U1 V3 V1 2SK3770-01MRS 0Vdc 10.0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Forward Current Characteristic of Reverse Diode Circuit Simulation Result Evaluation Circuit R1 0.01m V2 2SK3770-01MRS U1 0Vdc V3 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.00102 0.524 0.525 0.19 0.00207 0.544 0.5445 0.0919 0.00503 0.568 0.568 0 0.0099 0.588 0.587 0.17 0.0203 0.606 0.606 0 0.0504 0.632 0.630 0.316 0.103 0.65 0.649 0.153 0.2 0.668 0.668 0 0.5 0.691 0.693 0.289 1 0.712 0.712 0 2 0.734 0.7335 0.068 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Circuit Simulation Result Evaluation Circuit R1 50 2S K3 77 0-01 MRS U1 V1 = -9 .4 V1 V2 = 10 .7 TD = 0 TR = 10 n TF = 10 n PW = 2 0u PE R = 50 u 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 294 ns 294.69 ns 0.235 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. Reverse Recovery Characteristic Reference Trj=162(ns) Trb=132(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005