This document summarizes the SPICE modeling and simulation of the power MOSFET and body diode components of the 2SK3869 transistor. It includes SPICE parameter definitions and simulation results validating the models against measurement data for key electrical characteristics such as transconductance, capacitance, switching time, and forward/reverse current behavior. The document provides a reference for the device models and simulation setups used to test the models' accuracy.

1. Device Modeling Report
COMPONENTS: Power MOSFET (Model Parameter)
PART NUMBER: 2SK3869
MANUFACTURER: TOSHIBA
Body Diode (Model Parameter) / ESD Protection Diode
Bee Technologies Inc.
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

2. Circuit Configuration
2SK3869
MOSFET MODEL
Pspice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Modility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

3. Transconductance Characteristic
Circuit Simulation Result
Comparison table
gfs
Id(A) Error(%)
Measurement Simulation
0.100 0.900 0.911 1.222
0.200 1.250 1.285 2.816
0.500 2.000 2.014 0.690
1.000 2.750 2.824 2.695
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

4. Vgs-Id Characteristic
Circuit Simulation result
20A
18A
16A
14A
12A
10A
8A
6A
4A
2A
0A
0V 1V 2V 3V 4V 5V 6V 7V 8V 9V 10V
I(V3)
V_V1
Evaluation circuit
V3
0Vdc
U3
V2
20Vdc
2SK3869
V1
0Vdc
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

5. Comparison Graph
Circuit Simulation Result
Simulation Result
VGS(V)
ID(A) Error (%)
Measurement Simulation
0.500 4.400 4.473 1.659
1.000 4.600 4.685 1.848
2.000 4.950 4.987 0.747
5.000 5.550 5.598 0.865
10.000 6.250 6.306 0.896
15.000 6.800 6.862 0.912
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

6. Rds(on) Characteristic
Circuit Simulation result
5.0A
4.0A
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V2)
V_VDS
Evaluation circuit
V2
0Vdc
U6
VDS
0Vdc
2SK3869
VGS
10Vdc
0
Simulation Result
ID=5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.550  0.550  0.000
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

7. Gate Charge Characteristic
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 8n 16n 24n 32n 40n
V(W1:2)
Time*1mA
Evaluation circuit
U9 2SK3869
W1 I2
I1 = 0 + D2
I2 = 1m Dbreak 10
-
TR = 10n
TF = 10n W
TD = 0 IOFF = 1mA
PER = 1000u ION = 0uA 360
PW = 600u
V1
0
Simulation Result
VDD=360V,ID= 10A
Measurement Simulation Error (%)
,VGS=10V
Qgs 8 nC 7.973 nC -0.337
Qgd 12 nC 12.02 nC 0.225
Qg 28 nC 25.67 nC -8.300
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

8. Capacitance Characteristic
Measurement
Simulation
Simulation Result
Cbd(pF)
VDS(V) Error(%)
Measurement Simulation
0.100 1500.000 1490.000 -0.666
0.200 1300.000 1320.000 1.538
0.500 1150.000 1100.000 -4.347
1.000 800.000 810.000 1.250
2.000 600.000 600.000 0.000
5.000 350.000 355.000 1.428
10.000 270.000 280.000 3.703
20.000 108.000 103.000 -4.629
50.000 76.000 75.000 -1.315
100.000 53.000 54.000 1.886
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

9. Switching Time Characteristic
Circuit Simulation result
12V
10V
8V
6V
4V
2V
0V
1.6us 1.8us 2.0us 2.2us 2.4us
V(2) V(3)/20
Time
Evaluation circuit
L2
3
50n
U2
R1 L1
2 RL
50 30nH 16
V1 = 0
V2 = 20 V2 2SK3869
TD = 2u VDD
TR = 6n R2 200Vdc
TF = 7n
PW = 100u 50
PER = 200u
0
Simulation Result
ID= 5A, VDD= 200V
Measurement Simulation Error(%)
VGS=0/10V
ton 60.000 ns 60.046 ns 0.0766
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

10. Output Characteristic
Circuit Simulation result
20A
10
16A
15
6.75 V
12A
6.5 V
6.25 V
8A 6V
5.5V
4A
VGS= 4.5V
0A
0V 10V 20V 30V 40V 50V
I(V3)
V_V2
Evaluation circuit
V3
0Vdc
U10
2SK3869
V1 V2
0 0
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

11. BODY DIODE SPICE MODEL
Forward Current Characteristic
Circuit Simulation Result
10A
1.0A
100mA
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
V_V1
Evaluation Circuit
R1
0.01m
U4
V1
0Vdc
2SK3869
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

12. Comparison Graph
Circuit Simulation Result
Simulation Result
VDS(V) VDS(V)
IDR(A) Measurement Simulation %Error
0.100 0.640 0.641 0.156
0.200 0.670 0.663 -1.045
0.500 0.70 0.698 -0.286
1.000 0.720 0.730 1.389
2.000 0.780 0.775 -0.641
5.000 0.870 0.863 -0.805
10.000 0.980 0.971 -0.918
20.000 1.160 1.150 -0.862
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

13. Reverse Recovery Characteristic
Circuit Simulation Result
400mA
0A
-400mA
14us 16us 18us 20us 22us 24us 26us 28us 30us 32us
I(RL21)
Time
Evaluation Circuit
RL21
N07543
50
V1 = -9.40
V2 = 10.68
TD = 1.8u U8 2SK3869
TF = 10n V21
TR = 10n
PW = 20u
PER = 50u
0
Compare Measurement vs. Simulation
Measurement Simulation Error (%)
trj 1.20 us 1.207 us 0.608
trb 1.12 us 0.1609 us -85.633
trr 2.32 us 1.368 us -41.025
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

14. Reverse Recovery Characteristic Reference
Trj=1.20(us)
Trb=1.12(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50
Example
Relation between trj and trb
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

15. ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic
Circuit Simulation Result
10mA
9mA
8mA
7mA
6mA
5mA
4mA
3mA
2mA
1mA
0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V
I(R1)
V_V1
Evaluation Circuit
R1 Open
0.01m
2SK3869
V1
0Vdc
U5
0
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

16. Zener Voltage Characteristic Reference
All Rights Reserved Copyright (c) Bee Technologies Inc. 2006