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Device Modeling Report




COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: C4D15120A
MANUFACTURER: CREE
REMARK: Professional Model




                 Bee Technologies Inc.




   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                  1
DIODE MODEL PARAMETERS

 Spice model
                                      Model description
  parameter
     IS        Saturation Current
     N         Emission Coefficient
    RS         Series Resistance
    IKF        High-injection Knee Current
    CJO        Zero-bias Junction Capacitance
     M         Junction Grading Coefficient
     VJ        Junction Potential
    ISR        Recombination Current Saturation Value
     BV        Reverse Breakdown Voltage(a positive value)
    IBV        Reverse Breakdown Current(a positive value)
     TT        Transit Time
    EG         Energy-band Gap




           All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                          2
Forward Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    3
Comparison Graph

Circuit Simulation result




Comparison table


                                             VF (V)
               IF (A)                                                       %Error
                                Measurement           Simulation
                        0.1              0.750                 0.766              2.13
                        0.2              0.825                 0.809              -1.94
                        0.5              0.875                 0.872              -0.34
                            1            0.935                 0.929              -0.64
                            2            0.995                 1.004              0.90
                            5            1.155                 1.160              0.43
                        10               1.380                 1.372              -0.58
                        20               1.755                 1.755              0.00
                        30               2.120                 2.122              0.09




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          4
Reverse Current Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    5
Comparison Graph

Circuit Simulation result




Comparison table


                                             IR (uA)
              VR (V)                                                        %Error
                             Measurement               Simulation
                    1200             2.00E-02              1.97E-02               -1.49
                    1400             7.09E-02              7.44E-02               4.90
                    1600             3.04E-01              2.89E-01               -4.93
                    1643            5.00E+00              5.00E+00                0.00




                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          6
Total Capacitance Characteristics

Circuit Simulation result




Evaluation circuit




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                    7
Comparison Graph

Circuit Simulation result




Comparison table


                                            CT (pF)
              VR (V)                                                        %Error
                                Measurement          Simulation
                       0.2           1115.000              1118.500               0.31
                       0.5          1015.000              1010.900                -0.40
                            1         895.000               885.118               -1.10
                            2         730.000               731.515               0.21
                            5         510.000               524.924               2.93
                        10            390.000               391.239               0.32
                        20            285.000               285.247               0.09
                        50            185.000               184.565               -0.24
                       100            135.000               131.917               -2.28
                       200             95.000                94.030               -1.02
                       500             60.000                59.975               -0.04
                    1000               44.000                42.635               -3.10

                   All Rights Reserved Copyright (C) Bee Technologies Inc. 2012
                                                                                          8

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SPICE MODEL of C4D15120A LTspice Model (Professional Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Silicon Carbide Schottky Diode PART NUMBER: C4D15120A MANUFACTURER: CREE REMARK: Professional Model Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 1
  • 2. DIODE MODEL PARAMETERS Spice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 2
  • 3. Forward Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 3
  • 4. Comparison Graph Circuit Simulation result Comparison table VF (V) IF (A) %Error Measurement Simulation 0.1 0.750 0.766 2.13 0.2 0.825 0.809 -1.94 0.5 0.875 0.872 -0.34 1 0.935 0.929 -0.64 2 0.995 1.004 0.90 5 1.155 1.160 0.43 10 1.380 1.372 -0.58 20 1.755 1.755 0.00 30 2.120 2.122 0.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 4
  • 5. Reverse Current Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 5
  • 6. Comparison Graph Circuit Simulation result Comparison table IR (uA) VR (V) %Error Measurement Simulation 1200 2.00E-02 1.97E-02 -1.49 1400 7.09E-02 7.44E-02 4.90 1600 3.04E-01 2.89E-01 -4.93 1643 5.00E+00 5.00E+00 0.00 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 6
  • 7. Total Capacitance Characteristics Circuit Simulation result Evaluation circuit All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 7
  • 8. Comparison Graph Circuit Simulation result Comparison table CT (pF) VR (V) %Error Measurement Simulation 0.2 1115.000 1118.500 0.31 0.5 1015.000 1010.900 -0.40 1 895.000 885.118 -1.10 2 730.000 731.515 0.21 5 510.000 524.924 2.93 10 390.000 391.239 0.32 20 285.000 285.247 0.09 50 185.000 184.565 -0.24 100 135.000 131.917 -2.28 200 95.000 94.030 -1.02 500 60.000 59.975 -0.04 1000 44.000 42.635 -3.10 All Rights Reserved Copyright (C) Bee Technologies Inc. 2012 8