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All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: CUS357
MANUFACTURER: TOSHIBA
REMARK: Professional Model
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
3
U1
CUS357
R1
0.01m
V1
0Vdc
0
V_V1
0V 100mV 200mV 300mV 400mV 500mV 600mV
I(R1)
1.0uA
10uA
100uA
1.0mA
10mA
100mA
1.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
4
Comparison Graph
Circuit Simulation result
Comparison table
IF (mA)
VF (V)
%Error
Measurement Simulation
0.001 0.050 0.049 -2.00
0.01 0.104 0.105 0.96
0.1 0.162 0.164 1.23
1 0.230 0.226 -1.74
10 0.310 0.305 -1.61
20 0.345 0.344 -0.29
50 0.420 0.423 0.71
100 0.520 0.519 -0.19
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
5
V(R)
0V 5V 10V 15V 20V 25V 30V 35V 40V 45V
I(V2)/(45V/1u)
1.0p
10p
100p
U1
CUS357
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 1us
V2 = 45
V2
0Vdc
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
6
Comparison Graph
Circuit Simulation result
Comparison table
VR(V)
Ct (pF)
%Error
Measurement Simulation
1 7.000 6.900 -1.429
2 5.000 4.970 -0.600
5 3.140 3.050 -2.866
10 2.300 2.230 -3.043
20 1.840 1.800 -2.174
30 1.620 1.650 1.852
40 1.550 1.590 2.581
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
7
V_V1
0V 5V 10V 15V 20V 25V 30V 35V 40V
I(R1)
100nA
1.0uA
10uA
U1
CUS357
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit
All Rights Reserved Copyright (C) Bee Technologies Inc. 2015
8
Comparison Graph
Circuit Simulation result
Comparison table
VR (V)
IR (uA)
%Error
Measurement Simulation
1.000 0.200 0.198 -1.00
2.000 0.214 0.207 -3.27
5.000 0.237 0.229 -3.38
10.000 0.260 0.256 -1.54
20.000 0.300 0.292 -2.67
30.000 0.340 0.332 -2.35
40.000 0.420 0.412 -1.90

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SPICE MODEL of CUS357 (Professional Model) in SPICE PARK

  • 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: CUS357 MANUFACTURER: TOSHIBA REMARK: Professional Model
  • 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
  • 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 3 U1 CUS357 R1 0.01m V1 0Vdc 0 V_V1 0V 100mV 200mV 300mV 400mV 500mV 600mV I(R1) 1.0uA 10uA 100uA 1.0mA 10mA 100mA 1.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
  • 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 4 Comparison Graph Circuit Simulation result Comparison table IF (mA) VF (V) %Error Measurement Simulation 0.001 0.050 0.049 -2.00 0.01 0.104 0.105 0.96 0.1 0.162 0.164 1.23 1 0.230 0.226 -1.74 10 0.310 0.305 -1.61 20 0.345 0.344 -0.29 50 0.420 0.423 0.71 100 0.520 0.519 -0.19
  • 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 5 V(R) 0V 5V 10V 15V 20V 25V 30V 35V 40V 45V I(V2)/(45V/1u) 1.0p 10p 100p U1 CUS357 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 1us V2 = 45 V2 0Vdc Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
  • 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 6 Comparison Graph Circuit Simulation result Comparison table VR(V) Ct (pF) %Error Measurement Simulation 1 7.000 6.900 -1.429 2 5.000 4.970 -0.600 5 3.140 3.050 -2.866 10 2.300 2.230 -3.043 20 1.840 1.800 -2.174 30 1.620 1.650 1.852 40 1.550 1.590 2.581
  • 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 7 V_V1 0V 5V 10V 15V 20V 25V 30V 35V 40V I(R1) 100nA 1.0uA 10uA U1 CUS357 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
  • 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2015 8 Comparison Graph Circuit Simulation result Comparison table VR (V) IR (uA) %Error Measurement Simulation 1.000 0.200 0.198 -1.00 2.000 0.214 0.207 -3.27 5.000 0.237 0.229 -3.38 10.000 0.260 0.256 -1.54 20.000 0.300 0.292 -2.67 30.000 0.340 0.332 -2.35 40.000 0.420 0.412 -1.90