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Device Modeling Report




COMPONENTS:
DIODE/ SCHOOTTKY RECTIFIER / STANDARD
PART NUMBER: DG1M3A
MANUFACTURER: SHINDENGEN




              Bee Technologies Inc.



 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
PSpice model
                                    Model description
 parameter
     IS         Saturation Current
     N          Emission Coefficient
     RS         Series Resistance
    IKF         High-injection Knee Current
    CJO         Zero-bias Junction Capacitance
     M          Junction Grading Coefficient
     VJ         Junction Potential
    ISR         Recombination Current Saturation Value
     BV         Reverse Breakdown Voltage(a positive value)
    IBV         Reverse Breakdown Current(a positive value)
     TT         Transit Time
    EG          Energy-band Gap




         All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Forward Current Characteristic


Circuit Simulation Result




Evaluation Circuit


                      R1


                       0.001m

           V1
   0Vdc                                 D1



                            DG1M3A




                       0




                All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                              Vfwd(V)           Vfwd(V)
           Ifwd(A)                                                   %Error
                            Measurement        Simulation
                     0.1           0.315             0.313                    -0.63
                     0.2           0.331             0.333                     0.60
                     0.5           0.365             0.367                     0.55
                       1           0.400             0.400                     0.00
                       2           0.450             0.447                    -0.67
                       5           0.560             0.561                     0.18
                      10           0.725             0.726                     0.14




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Junction Capacitance Characteristic


Circuit Simulation Result




Evaluation Circuit

                          V2


   V2 = 30                     0Vdc
   V1 = 0
   TD = 0
   TR = 10ns    V1                             D1
   TF = 50ns
   PW = 5us
   PER = 10us
                                      DG1M3A




                               0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
Comparison Graph


Circuit Simulation Result




Simulation Result

                               Cj(pF)            Cj(pF)
           Vrev(V)                                                   %Error
                            Measurement        Simulation
                     0.1           274.00            279.00                    1.82
                     0.2           252.00            259.00                    2.78
                     0.5           210.00            212.00                    0.95
                       1           172.00            174.00                    1.16
                       2           137.00            136.60                   -0.29
                       5            95.00             96.00                    1.05
                      10            72.00             72.40                    0.56
                      20            56.00             54.00                   -3.57




               All Rights Reserved Copyright (C) Bee Technologies Inc. 2004

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SPICE MODEL of DG1M3A (Standard Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: DIODE/ SCHOOTTKY RECTIFIER / STANDARD PART NUMBER: DG1M3A MANUFACTURER: SHINDENGEN Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 2. PSpice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 3. Forward Current Characteristic Circuit Simulation Result Evaluation Circuit R1 0.001m V1 0Vdc D1 DG1M3A 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 4. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) %Error Measurement Simulation 0.1 0.315 0.313 -0.63 0.2 0.331 0.333 0.60 0.5 0.365 0.367 0.55 1 0.400 0.400 0.00 2 0.450 0.447 -0.67 5 0.560 0.561 0.18 10 0.725 0.726 0.14 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 5. Junction Capacitance Characteristic Circuit Simulation Result Evaluation Circuit V2 V2 = 30 0Vdc V1 = 0 TD = 0 TR = 10ns V1 D1 TF = 50ns PW = 5us PER = 10us DG1M3A 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004
  • 6. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Cj(pF) Vrev(V) %Error Measurement Simulation 0.1 274.00 279.00 1.82 0.2 252.00 259.00 2.78 0.5 210.00 212.00 0.95 1 172.00 174.00 1.16 2 137.00 136.60 -0.29 5 95.00 96.00 1.05 10 72.00 72.40 0.56 20 56.00 54.00 -3.57 All Rights Reserved Copyright (C) Bee Technologies Inc. 2004