SPICE MODEL of IDH02G65C5 (Professional Model) in SPICE PARK
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SPICE MODEL of IDH02G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDH02G65C5 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: IDH02G65C5 MANUFACTURER: Infineon REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 IDH02G65C5 R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V I(R1) 0A 1.0A 2.0A 3.0A 4.0A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 0.1 0.930 0.931 0.11 0.2 0.980 0.980 0.00 0.5 1.090 1.089 -0.09 1 1.240 1.238 -0.16 2 1.500 1.500 0.00 4 2.000 2.000 0.00
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 0 10p 20p 30p 40p 50p 60p 70p 80p 90p 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc R2 100MEG U1 IDH02G65C5 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) C (pF) %Error Measurement Simulation 0.1 84.000 83.680 -0.38 0.2 82.000 81.650 -0.43 0.5 77.000 76.440 -0.73 1 70.000 69.500 -0.71 2 59.000 59.460 0.78 5 45.000 43.710 -2.87 10 34.000 32.650 -3.97 20 25.000 23.940 -4.24 50 17.000 16.330 -3.94 100 12.300 12.900 4.88 200 10.400 10.840 4.23 500 9.200 9.620 4.57
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA U1 IDH02G65C5 R4 10G V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1.00E-09 480.000 461.620 -3.83 1.00E-08 563.000 567.300 0.76 1.00E-07 650.000 654.260 0.66