SPICE MODEL of IDH20G65C5 (Professional Model) in SPICE PARK
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SPICE MODEL of IDH20G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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SPICE MODEL of IDH20G65C5 (Professional Model) in SPICE PARK
- 1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 1 Device Modeling Report Bee Technologies Inc. COMPONENTS: SiC Schottky Barrier Diode PART NUMBER: IDH20G65C5 MANUFACTURER: Infineon REMARK: Professional Model
- 2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 2 Circuit Configuration DIODE MODEL PARAMETERS PSpice model parameter Model description IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time EG Energy-band Gap
- 3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 3 U1 IDH20G65C5 R1 0.01m V1 0Vdc 0 R2 100MEG V _ V 1 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(R1) 0A 5A 10A 15A 20A 25A 30A 35A 40A Forward Current Characteristics Circuit Simulation result Evaluation circuit
- 4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 4 Comparison Graph Circuit Simulation result Comparison table IF (A) VF (V) %Error Measurement Simulation 1 0.960 0.959 -0.10 2 1.000 1.000 0.00 5 1.100 1.100 0.00 10 1.245 1.244 -0.08 20 1.510 1.513 0.20 40 2.030 2.030 0.00
- 5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 5 V ( R ) 100mV 1.0V 10V 100V 1.0KV I(V2)/(650V/100u) 0 100p 200p 300p 400p 500p 600p 700p 800p 0 R V1 TD = 0 TF = 100ns PW = 100us PER = 10m V1 = 0 TR = 100us V2 = 650 V2 0Vdc R2 100MEG U1 IDH20G65C5 Junction Capacitance Characteristic Circuit Simulation result Evaluation circuit
- 6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 6 Comparison Graph Circuit Simulation result Comparison table VR(V) C (pF) %Error Measurement Simulation 0.1 701.000 690.760 -1.46 0.2 683.000 675.600 -1.08 0.5 645.000 638.500 -1.01 1 585.000 585.000 0.00 2 500.000 505.400 1.08 5 380.000 371.820 -2.15 10 288.000 275.000 -4.51 20 210.000 200.000 -4.76 50 140.000 136.200 -2.71 100 106.000 109.840 3.62 200 91.000 94.700 4.07 500 83.000 84.620 1.95
- 7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 7 V _ V 1 100V 200V 300V 400V 500V 600V I(R1) 1.0nA 10nA 100nA 1.0uA 10uA R4 10G U1 IDH20G65C5 V1 0Vdc R1 100m 0 Reverse Characteristic Circuit Simulation result Evaluation circuit
- 8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014 8 Comparison Graph Circuit Simulation result Comparison table IR (A) VR (V) %Error Measurement Simulation 1.00E-09 405.000 396.110 -2.20 1.00E-08 488.000 490.200 0.45 1.00E-07 570.000 570.370 0.06 1.00E-06 650.000 649.210 -0.12