SPICE MODEL of IDT02S60C (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. Device Modeling Report
COMPONENTS: Silicon Carbide Schottky Diode
PART NUMBER: IDT02S60C
MANUFACTURER: Infineon
REMARK: Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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2. Circuit Configuration
U1
IDT02S60C
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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3. DIODE MODEL PARAMETERS
PSpice
model Model description
parameter
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Forward Current Characteristics
Circuit Simulation result
3.0A
2.0A
1.0A
0A
0V 1.0V 2.0V 3.0V 4.0V
I(R1)
V_V1
Evaluation circuit
R1
0.01m
V1 U1
IDT02S60C
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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5. Comparison Graph
Circuit Simulation result
3
Measurement
Simulation
Forword Current, IF (A)
2
1
0
0 1 2 3 4
Forward Voltage, VF (V)
Comparison table
VF (V)
IF (A) %Error
Measurement Simulation
0.1 1.000 0.975 -2.50
0.2 1.040 1.028 -1.15
0.5 1.160 1.160 0.00
1 1.355 1.358 0.22
2 1.730 1.735 0.29
3 2.100 2.106 0.29
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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6. Reverse Current Characteristic
Circuit Simulation result
10uA
1.0uA
100nA
10nA
1.0nA
100pA
100V 200V 300V 400V 500V 600V
I(U1:K)
V_V1
Evaluation circuit
V2
0
V1 U1
IDT02S60C
0
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7. Comparison Graph
Circuit Simulation result
1.E+01
Measurement
Simulation
1.E+00
Reverse Current, IR (A)
1.E-01
1.E-02
1.E-03
1.E-04
100 200 300 400 500 600
Reverse Voltage , VR (V)
Comparison table
IR (A)
VR (V) %Error
Measurement Simulation
100 1.300E-03 1.316E-03 1.23
200 2.700E-03 2.730E-03 1.11
500 5.830E-02 6.100E-02 4.63
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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8. Junction Capacitance Characteristic
Circuit Simulation result
60p
55p
50p
45p
40p
35p
30p
25p
20p
15p
10p
5p
0
1.0V 10V 100V 1.0KV
I(V2)/(600V/1u)
V(R)
Evaluation circuit
V2
R
0
V1 = 0 V1 U1
V2 = 600 IDT02S60C
TD = 0
TR = 1us
TF = 100ns
PW = 100us
PER = 10m
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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9. Comparison Graph
Circuit Simulation result
60
Measurement
Simulation
45
Capacitance, C (pF)
30
15
0
1 10 100 1000
Reverse Voltage, VR (V)
Comparison table
C (pF)
VR (V) %Error
Measurement Simulation
1 59.500 58.389 -1.87
2 52.000 52.339 0.65
5 41.000 41.132 0.32
10 32.000 31.890 -0.34
20 24.000 23.731 -1.12
50 16.250 15.928 -1.98
100 12.400 12.143 -2.07
200 9.400 9.682 3.00
500 8.000 7.753 -3.09
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
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