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Device Modeling Report




 COMPONENTS: PHOTOCOUPLER
 PART NUMBER: PC829
 MANUFACTURER: SHARP




              Bee Technologies Inc.


All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
DIODE MODEL
  Pspice model
                                         Model description
   Parameter
        IS         Saturation Current
        N          Emission Coefficient
       RS          Series Resistance
       IKF         High-injection Knee Current
      CJO          Zero-bias Junction Capacitance
        M          Junction Grading Coefficient
        VJ         Junction Potential
      ISR          Recombination Current Saturation Value
       BV          Reverse Breakdown Voltage(a positive value)
      IBV          Reverse Breakdown Current(a positive value)
        TT         Transit Time

BIPOLAR JUNCTION TRANSISTOR MODEL
  Pspice model
                                Model description
   parameter
       NR      Reverse Emission Coefficient
       RB      Base Resistance
       RC      Series Collector Resistance
      CJE      Zero-bias Emitter-Base Junction Capacitance
      CJC      Zero-bias Collector-Base Junction Capacitance
       TF      Forward Transit Time
       TR      Reverse Transit Time

VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS)


E<Name><(+)Node><(-)Node>VALUE={Expression}

E<Name><(+)Node><(-)Node>TABLE={Expression}




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS)


E<Name><(+)Node><(-)Node>VALUE={Expression}


CURRENT CONTROLLED MODEL(W)
 Pspice model
                               Model description
  parameter
     IOFF     Controlling current to Off state
      ION     Controlling current to On state
    ROFF      Off Resistance
     RON      On Resistance




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Forward Current Characteristics




                                                  Measurement
                                                  Simulation




Input Device Junction Capacitance Characteristics



                                              Measurement
                                              Simulation




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Input Device Reverse Recovery Characteristics



                                              Measurement




trj=196n(s)
trb=60n(s)
Conditions:Ifwd=Irev=0.04(A),Rl=50




                               Relation between trj and trb


              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
LED IV Curve Characteristics

Simulation result

             500mA




                                                                           Simulation
             100mA




              10mA




             1.0mA
                     0V           0.5V         1.0V     1.5V        2.0V       2.5V     3.0V
                          I(I1)
                                                       V(U6:1)




Evaluation Circuit



                                               U6
                                           1              8
                                  N00044                                                       open
                                                                                        V1

    50mAdc         I1                      2              7                   2Vdc
                                                                                                      R1
                                           3              6
                                   open                          open                                 1k


                                           4              5                                       0
                                                                 open
                                  open
                                               PC829
               0                                                                      0




                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Comparison Graph




Comparison Table

    Ifwd(A)                     Vfwd(V)                            % Error
                       Measurement             Simulation
          0.001               1.050                 1.047                    -0.286
          0.002               1.080                 1.078                    -0.185
          0.005               1.120                 1.126                     0.536
           0.01               1.170                 1.176                     0.513
           0.02               1.250                 1.238                    -0.960
           0.05               1.350                 1.352                     0.148




              All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Transistor Saturation Characteristics

Simulation result

      160mV




                                                               Simulation

      120mV




       80mV




       40mV
              0s                               50ms                          100ms
                   V(I2:-)
                                               Time


Evaluation Circuit



                                   U6                                       open
                               1           8
                   N00044
       I1                                                           I2
                                                                                   R1
       20mAdc                  2           7                        1mAdc
                                                                                   1k
                               3           6
                        open                    open
                                                                               0

                               4           5
                                                open
       0              open                                          0
                                   PC829



Comparison Table

                               Measurement             Simulation           % Error
           Vce(sat) (V)                0.100                   0.100             0.000

                   All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
CTR(Current Transfer Ratio) Characteristics

Simulation result                                    Simulation



             200

             180

             160

             140

             120

             100

               80

               60

               40

               20

                0
               1.0mA                              10mA                              50mA
                   IC(X_U1.X_U1.Q_Q1)/ I(X_U1.X_U1.D_D1)*100
                                            I_I1



Evaluation Circuit


          V2                                                       V3


                0Vdc                                                    0Vdc
                                                                                           open
                                      U1
                                  1           8

                                                                                   V1             R1
                                                                        5Vdc
     I1                           2           7                                                   1k

    20mAdc                        3           6
                           open                    open                                       0

                                  4           5
                           open                    open

                                      PC829
    0                                                                          0




                    All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Rise Curve     Table

                                  CTR(%)
      If(mA)                                                       % Error
                        Measurement            Simulation
           1.000              77.000               76.993                -0.009
           2.000              94.000               91.228                -2.949
           5.000             115.000              110.149                -4.218
          10.000             128.000              124.382                -2.827
          14.000             130.000              130.955                 0.735


Fall Curve Table

                                  CTR(%)
      If(mA)                                                       % Error
                       Measurement      Simulation
          14.000             130.000         130.955                      0.735
          20.000             128.000         123.214                     -3.739
          30.000             120.000         114.436                     -4.637
          40.000             107.000         104.994                     -1.875
          47.000             101.000          98.619                     -2.357




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
Switching Time Characteristics

Simulation result

         3.0V       20mA
     1          2




         2.0V

                                                                   Simulation
                    10mA


         1.0V




                         >>
           0V            0A
                            0s             20us             40us          60us             80us
                             1       V(U1:7) 2         I(V1)
                                                            Time



Evaluation Circuit


                        V1


                             0Vdc
                                               U1
  TD = 0                                   1              8                          RL
  TF = 10n
  PW = 20u          IF                                                               100
  PER = 500u                                                                               open
  I1 = 0                                   2              7
  I2 = 20m                                                                       V2
  TR = 10n                                 3              6
                                    open                       open
                                                                         2Vdc                     R1
                                                                                                  1k
                                           4              5
                                    open                       open
                                                                                              0
                                               PC829                             0
                    0



Comparison Table
   Vce=2V,RL=100                   Measurement               Simulation              % Error
                ts (us)                     0.210                     0.209                -0.476
                 tf (us)                    3.200                     3.195                -0.156

                All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

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SPICE MODEL of PC829 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: PHOTOCOUPLER PART NUMBER: PC829 MANUFACTURER: SHARP Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time BIPOLAR JUNCTION TRANSISTOR MODEL Pspice model Model description parameter NR Reverse Emission Coefficient RB Base Resistance RC Series Collector Resistance CJE Zero-bias Emitter-Base Junction Capacitance CJC Zero-bias Collector-Base Junction Capacitance TF Forward Transit Time TR Reverse Transit Time VOLTAGE CONTROLLED VOLTAGE SOURCE MODEL(VCVS) E<Name><(+)Node><(-)Node>VALUE={Expression} E<Name><(+)Node><(-)Node>TABLE={Expression} All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 3. VOLTAGE CONTROLLED CURRENT SOURCE MODEL(VCCS) E<Name><(+)Node><(-)Node>VALUE={Expression} CURRENT CONTROLLED MODEL(W) Pspice model Model description parameter IOFF Controlling current to Off state ION Controlling current to On state ROFF Off Resistance RON On Resistance All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 4. Input Device Forward Current Characteristics Measurement Simulation Input Device Junction Capacitance Characteristics Measurement Simulation All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 5. Input Device Reverse Recovery Characteristics Measurement trj=196n(s) trb=60n(s) Conditions:Ifwd=Irev=0.04(A),Rl=50 Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 6. LED IV Curve Characteristics Simulation result 500mA Simulation 100mA 10mA 1.0mA 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V I(I1) V(U6:1) Evaluation Circuit U6 1 8 N00044 open V1 50mAdc I1 2 7 2Vdc R1 3 6 open open 1k 4 5 0 open open PC829 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 7. Comparison Graph Comparison Table Ifwd(A) Vfwd(V) % Error Measurement Simulation 0.001 1.050 1.047 -0.286 0.002 1.080 1.078 -0.185 0.005 1.120 1.126 0.536 0.01 1.170 1.176 0.513 0.02 1.250 1.238 -0.960 0.05 1.350 1.352 0.148 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 8. Transistor Saturation Characteristics Simulation result 160mV Simulation 120mV 80mV 40mV 0s 50ms 100ms V(I2:-) Time Evaluation Circuit U6 open 1 8 N00044 I1 I2 R1 20mAdc 2 7 1mAdc 1k 3 6 open open 0 4 5 open 0 open 0 PC829 Comparison Table Measurement Simulation % Error Vce(sat) (V) 0.100 0.100 0.000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 9. CTR(Current Transfer Ratio) Characteristics Simulation result Simulation 200 180 160 140 120 100 80 60 40 20 0 1.0mA 10mA 50mA IC(X_U1.X_U1.Q_Q1)/ I(X_U1.X_U1.D_D1)*100 I_I1 Evaluation Circuit V2 V3 0Vdc 0Vdc open U1 1 8 V1 R1 5Vdc I1 2 7 1k 20mAdc 3 6 open open 0 4 5 open open PC829 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 10. Rise Curve Table CTR(%) If(mA) % Error Measurement Simulation 1.000 77.000 76.993 -0.009 2.000 94.000 91.228 -2.949 5.000 115.000 110.149 -4.218 10.000 128.000 124.382 -2.827 14.000 130.000 130.955 0.735 Fall Curve Table CTR(%) If(mA) % Error Measurement Simulation 14.000 130.000 130.955 0.735 20.000 128.000 123.214 -3.739 30.000 120.000 114.436 -4.637 40.000 107.000 104.994 -1.875 47.000 101.000 98.619 -2.357 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
  • 11. Switching Time Characteristics Simulation result 3.0V 20mA 1 2 2.0V Simulation 10mA 1.0V >> 0V 0A 0s 20us 40us 60us 80us 1 V(U1:7) 2 I(V1) Time Evaluation Circuit V1 0Vdc U1 TD = 0 1 8 RL TF = 10n PW = 20u IF 100 PER = 500u open I1 = 0 2 7 I2 = 20m V2 TR = 10n 3 6 open open 2Vdc R1 1k 4 5 open open 0 PC829 0 0 Comparison Table Vce=2V,RL=100 Measurement Simulation % Error ts (us) 0.210 0.209 -0.476 tf (us) 3.200 3.195 -0.156 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006