SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK
•
0 j'aime•203 vues
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
Recommandé
Recommandé
Contenu connexe
Tendances
Tendances (20)
En vedette
En vedette (20)
Similaire à SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK
Similaire à SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK (15)
Plus de Tsuyoshi Horigome
Plus de Tsuyoshi Horigome (20)
Dernier
Dernier (20)
SPICE MODEL of TPCF8A01 (Standard+BDS+SBDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Standard) PART NUMBER: TPCF8A01 MANUFACTURER: TOSHIBA Body Diode (Standard) / ESD Protection Diode / Schottky Barrier Diode (Standard) Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 2. POWER MOSFET MODEL Pspice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 3. Body Diode Model Pspice model Model description parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 4. Vgs-Id Characteristic Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V2) V_V1 Evaluation circuit U5 OP EN OP EN OP EN OP EN OP EN V2 R1 0V dc 10 0M EG V1 10 Vd c V3 0 10 Vd c 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 5. Comparison Graph Circuit Simulation Result Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 0.10 1.30 1.30 -0.32 0.20 1.33 1.33 0.07 0.50 1.40 1.40 0.09 1.00 1.49 1.48 -0.51 2.00 1.60 1.60 0.00 5.00 1.84 1.84 0.19 10.00 2.15 2.13 -0.73 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 6. Id-Rds(on) Characteristic Circuit Simulation result Evaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0 Simulation Result ID=1.5A, VGS=2.5V Measurement Simulation Error (%) R DS (on) 50.00 m 50.00 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 7. Gate Charge Characteristic Circuit Simulation result 6.0V 5.0V 4.0V 3.0V 2.0V 1.0V 0V 0 1n 2n 3n 4n 5n 6n 7n 8n 9n 10n V(W1:3) Time*10ms Evaluation circuit U2 V2 OPEN OPEN 0Vdc OPEN Dbreak R1 PER = 1000u D1 100MEG PW = 600u I2 TF = 10n W1 TR = 10n + 6Adc TD = 0 0 I2 = 10m - I1 W I1 = 0 IOFF = 1mA V1 ION = 0uA 24Vdc 0 Simulation Result VDD=16V Measurement Simulation Error (%) ,ID=3A Qgs 1.30 nC 1.29 nC -0.56 Qgd 2.10 nC 2.11 nC 0.24 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.50 55.00 54.65 -0.64 1.00 45.00 45.70 1.56 2.00 36.00 35.50 -1.39 5.00 23.00 22.93 -0.30 10.00 15.00 15.53 3.53 20.00 10.00 10.00 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 9. Switching Time Characteristic Circuit Simulation result 7.0V VDS = 10V 6.0V VGS = 5V 4.0V 2.0V 0V 5.00us 5.05us 5.09us V(2) V(3)/2 Time Evaluation circuit L1 RL 3 V3 0.03uH 6.67 OPEN 0Vdc U8 Rop OPEN OPEN VDD 100MEG 10 OPEN OPEN R1 L2 0 2 0.03uH 0 V1 = 0 4.7 V1 V2 = 10 R2 TD = 5u TR = 6n 4.7 TF = 7n PW = 5u PER = 100u 0 0 0 Simulation Result ID=3A, VDD=15V Measurement Simulation Error(%) VGS=0/5V td (on) 7.50 ns 7.53 ns 0.43 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 10. Output Characteristic Circuit Simulation result 10 3.0V 2.1V 2.0V 1.9V 1.8V 1.7V 1.6V 1.5V VGS=1.4V Evaluation circuit U2 OPEN OPEN OPEN OPEN OPEN V1 R1 0Vdc 100MEG TPCF8A01 0 VG VD 2.5Vdc 10Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 11. Forward Current Characteristic of Reverse Diode Circuit Simulation Result Evaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN R2 R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 12. Comparison Graph Circuit Simulation Result Simulation Result Vfwd(V) Vfwd(V) Ifwd(A) Measurement Simulation %Error 0.10 0.60 0.59 -0.50 0.20 0.63 0.63 0.48 0.50 0.69 0.69 0.14 1.00 0.74 0.74 0.00 2.00 0.80 0.80 0.00 5.00 0.91 0.91 0.44 10.00 1.05 1.05 -0.10 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 13. Reverse Recovery Characteristic Circuit Simulation Result Evaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN R2 R1 50 100MEG TPCF8A01 V1 = -10 V2 V2 = 10.6 TD = 0 0 TR = 10n TF = 10n PW = 20u PER = 50u 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trr=trj+trb 17.00 ns 17.13 ns 0.78 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 14. Reverse Recovery Characteristic Reference Trj=6.6(ns) Trb=10.4(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result Evaluation Circuit U2 OPEN OPEN OPEN OPEN OPEN OPEN R2 OPEN R1 0.01m 100MEG TPCF8A01 V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 16. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 17. Forward Current Characteristic of Schottky Barrier Diode Circuit Simulation Result Evaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN R2 U2 R1 0.01m 100MEG V1 0Vdc 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 18. Comparison Graph Circuit Simulation Result Simulation Result Vfwd (V) Ifwd (A) %Error Measurement Simulation 0.01 0.31 0.31 0.59 0.02 0.33 0.33 0.18 0.05 0.36 0.35 -0.87 0.10 0.38 0.37 -0.43 0.20 0.40 0.40 0.10 0.50 0.45 0.44 -0.63 1.00 0.49 0.49 0.67 2.00 0.57 0.58 1.25 5.00 0.80 0.80 -0.29 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 19. Junction Capacitance Characteristic of Schottky Barrier Diode Circuit Simulation Result Evaluation Circuit TPCF8A01 OPEN OPEN OPEN OPEN OPEN V2 U2 R1 V1 = 0 V1 0Vdc 100MEG V2 = 20 TD = 0 TR = 1u TF = 10n 0 PW = 50u PER = 100u 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005
- 20. Comparison Graph Circuit Simulation Result Simulation Result Cj(pF) Vrev(V) Measurement Simulation %Error 1.00 145.00 143.57 -0.99 2.00 110.00 110.40 0.37 5.00 75.00 74.44 -0.75 10.00 54.00 54.12 0.22 20.00 40.00 39.14 -2.15 All Rights Reserved Copyright (c) Bee Technologies Inc. 2005