http://www.i-micronews.com/reports/SiC-Market-2013/3/368/Technology and Market for SiC Wafers, Devices and Power Modules report Displacement of silicon has already begun... Despite overall power electronics 2012 downturn, SiC kept on growing Started late in 2011, the power electronics downturn in 2012 was quite severe, exhibiting -20% negative growth. The market suffered from the global economic downturn combined with external factors like China controlling what happened in some selected markets (Wind turbine or Rail traction projects that have been stopped or postponed). However, the SiC device market kept on growing with a +38% increase year to year. SiC technology is now commonly accepted as a reliable and pertinent alternative to the silicon world. Most power module and power inverter manufacturers have already included it in their roadmap as an option or as a firm project. However time-to-market differs from application to application as a function of value proposals for cost, specifications, availability and so on…. Despite a quite depressed market last year, PV inverters have proven their appetite for SiC devices in 2012. They are the biggest consumer of SiC devices together with PFCs. In 2011 and 2012 SiC diode business was the most buoyancy due to micro-inverter applications, however we are confident that both JFET and MOSFET will quickly catch-up and become dominant in revenue by 2016. SiC device (bare-dies or packaged discretes) market reached about $75M in 2012 with a sharp domination by Infineon and CREE again, however the competition is little by little grabbing market share with STMicroelectronics and Rohm closing the loop. 30 contenders, half-a-dozen of new entrants, 1 dead There are now more than 30 companies worldwide which have established a dedicated SiC device manufacturing capability with related commercial and promotion activities. Virtually, all other existing Silicon-based power device makers are also more or less active in the SiC market but at different stages. 2012 has seen the ramp-up of some companies, such as Rohm, MicroSemi, GeneSiC or STMicro, facing the 2 giants CREE and Infineon, prefiguring a new market shaping in the coming years. Four new companies - Raytheon, Ascatron, IBS and Fraunhofer IISB - have decided, almost simultaneously, to launch SiC foundry services or contract manufacturing services. This business model establishment addresses the demand of future SiC fabless and design houses that may look for specific manufacturing partners. It will also probably act as a possible second source for IDMs in cases of production overshoot. In Asia, Panasonic and Toshiba are now clearly identified as credible contenders, along with Mitsubishi Electric, now developing SiC power modules. Fuji Electric’s new SiC line is now running within the Japanese national program. More information on the report on http://www.i-micronews.com/reports/SiC-Market-2013/3/3

1. © 2013
SiC Market 2013Displacement of silicon has already begun...
Dow corning
II-VI AIST DensoCREE
75, cours Emile ZOLA, F-69100 Villeurbanne, France
Tel: +33 472 83 01 80 - Fax: +33 472 83 01 83
Web: http://www.yole.fr
Alstom
Mitsubishi

2. © 2013 • 2
Copyrights © Yole Développement SA. All rights reserved.
SiC Device Sales in 2012
A $75M business on the open market
2012 analysis of merchant sales of SiC devices for
commercial applications, on the open market, out of
defense-related business and R&D contracts
Careful! For numerous SiC
device makers, overall
revenues can more than
doubled thanks to R&D
contracts and defense-related
activities.
Thus, another $XXM may
have been realized, pushing
the global revenues
generated by SiC device
activity closer to a total of
$XXXM.
Executive Summary
Others are 2012 merchant activities from:
- Company A
- Company B
- Company C
- Company D
- Company E
- …
Some captive markets are not counted here:
- Mitsubishi Electric
-…

3. © 2013 • 3
Copyrights © Yole Développement SA. All rights reserved.
Projection of SiC Power Device Market Size
Split by application: Nominal scenario
Executive Summary
Source: Yole Développement

4. © 2013 • 4
Copyrights © Yole Développement SA. All rights reserved.
% of SiC revenues by company
headquarter location. 2002-2020
CREE domination Infineon then STMicro ramp-up Japan to catch-up Other Asians starting
Japan takes the lead

5. © 2013 • 5
Copyrights © Yole Développement SA. All rights reserved.
6kV
4kV
2kV
200A 1kA 2kA 2.2kA
+1MHz
100kHz
1kHz
100Hz
Voltage
Applications:
All type of inverter
Range kW to MW
Applications:
Motor control, PV, Wind,
Grid, rail traction
High to very high voltage
Applications: Grid / Very high voltage
8kV
10kV
SiC value-proposition: as fast as MOSFET, as
powerful as thyristor
New capabilities offered by SiC: several
kV, several kA, several 100’s kHz

6. © 2013 • 6
Copyrights © Yole Développement SA. All rights reserved.
Power
Modules
Where are SiC chips used over the entire
power industry value-chain
Capacitors
Laminated Busbar
Cooling systems Power Inverter
Drivers
Power Stack
Assembly
Other passives
Protection Connectors
Semiconductor devices
SiC chips
SiC vs. Si Market

7. © 2013 • 7
Copyrights © Yole Développement SA. All rights reserved.
Overall Power Electronics Market
2012 – 2020 value chain analysis: wafer, device, system
Electronics Systems
$122 B
Power Inverters
$41 B
Semiconductor power
devices (discrete and
modules)
$12.5B
Power wafers
$980M
Electronics Systems
$144 B
Power Inverters
> $70 B
Semiconductor power
devices (discrete and
modules)
$21.9 B
Power wafers
$1.3 B
2012 2020
CAGR: +5.6%
CAGR: +7.9%
CAGR: +1.9%
CAGR: +7.2%
SiC vs. Si Market

8. © 2013 • 8
Copyrights © Yole Développement SA. All rights reserved.
Focus on China
Tool-set and main results
• Tool-set:
– SiC crystal growth
• About XX home-made sublimation reactors installed
– SiC epitaxy
• Between X to X SiC epi-reactors installed in China
(Epigress/Aixtron)
• Achievement
– SiC wafer:
• Diameter: 2” in 2003, 3” in 2008, 4” in 2011. 6” forecasted by 2015
• Micropipe density:
– < 1 /cm² for 2” and 3”
– < 10 /cm² for 4”
• Total capacity: ~X000 W/month

9. © 2013 • 9
Copyrights © Yole Développement SA. All rights reserved.
Market forecasts for EV/HEV Power Modules in M$
Nominal Scenario
HEV Market

10. © 2013 • 10
Copyrights © Yole Développement SA. All rights reserved.
PV inverters commercial products with SiC
Hybrid Si/SiC products
– Power One (US): Aurora Micro-inverter 205W (Micro-0.25-I-OUTD-230)
• 2 CREE SiC diodes 1200V/5A (TO263) + 2 CREE diodes 600V/4A (TO252)
Courtesy of System+
Consulting
PV Inverter

11. © 2013 • 11
Copyrights © Yole Développement SA. All rights reserved.
Implementation roadmap of SiC devices
in PV inverters by power range
PV Inverter

12. © 2013 • 12
Copyrights © Yole Développement SA. All rights reserved.
Estimated market shares of SiC device
vendors and users for PV inverters in 2012
PV Inverter
MOS + Diodes
J-FET + Diodes
Breakdown over a total market size of ~$XXM in 2011
???
Diodes (1200V/22A)
Diodes (1200V/5A)

13. © 2013 • 13
Copyrights © Yole Développement SA. All rights reserved.
Motor drives applications by power
and voltage range
<1kW
10kW
100kW
>1MW
1200V600V 1700V 3300V 6500V
Medium voltage drives >1kV DC linkLow voltage drives <1kV DC link
Drive power
IGBT voltage
IPM
Power
modules
HV Power
modules
+3.3kV
Motor Drive Market

14. © 2013 • 14
Copyrights © Yole Développement SA. All rights reserved.
SiC Growth Technologies
Main concepts
Sublimation
(PVT)
HT CVD
Hetero-epitaxy
3C-SiC
LPE
Physics
Pro
Most used technology
Widely implemented
Continuous material feeding
Highly tunable parameters
Turn-key equipment
Supposedly low-cost
Fully scalable in Ø
Similar to Cz method
Cons
Powder purity is key
Growth rate, Crystal
length
No turn-key equipment
Trade-off growth-rate vs.
defect density
Wafer bowing
Defect density
Metal contamination
Carbon solubility in Si
melt
SiC Substrate Market
SiC deposited
by LPCVD
“undulant” Si wafer,
removed after growth
(Hoya patent)

15. © 2013 • 15
Copyrights © Yole Développement SA. All rights reserved.
Evolution of Relative Market Shares in the SiC Business
2006-2012
SiC Substrate Market
Source: Yole Développement

16. © 2013 • 16
Copyrights © Yole Développement SA. All rights reserved.
Estimation of market price for SiC devices
600V & 1.2kV Diode and MOSFET to 2020
Main hypothesis:
- Market price for bare chips sold in medium to large volume (> 5,000 pieces / order)
- X%/year price erosion over 2011-2012
- X%/year price erosion over 2013-2016 thanks to 6” wafer introduction + yield improvement
- X%/year price erosion over 2017-2018 thanks to mass-volume effect
- X%/year price erosion over 2019-20: back to nominal conditions
SiC Device Technologies

17. © 2013 • 17
Copyrights © Yole Développement SA. All rights reserved.
Packaging of Power Modules
Heatsink
Thermal grease
Substrate
SBD IGBT
Baseplate
DBC
Busbar
connection
Solder
Copper
metallization
Plastic case
• Common failure in a power module is caused by thermal cycling.
Mismatching CTE (coefficient of thermal expansion) make layers to detach
one from the other. Some gel filling also cannot handle high temperature
Die attach
Interconnection
Gel filling
Substrates attach
In red: Common failure locations
SiC power modules