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1. MOTOROLA Order this document
SEMICONDUCTOR TECHNICAL DATA by BC517/D
Darlington Transistors
NPN Silicon
BC517
COLLECTOR 1
BASE
2
EMITTER 3
1
2
3
MAXIMUM RATINGS
Rating Symbol Value Unit CASE 29–04, STYLE 17
TO–92 (TO–226AA)
Collector – Emitter Voltage VCES 30 Vdc
Collector – Base Voltage VCB 40 Vdc
Emitter – Base Voltage VEB 10 Vdc
Collector Current — Continuous IC 1.0 Adc
Total Power Dissipation @ TA = 25°C PD 625 mW
Derate above 25°C 12 mW/°C
Total Power Dissipation @ TC = 25°C PD 1.5 Watts
Derate above 25°C 12 mW/°C
Operating and Storage Junction TJ, Tstg – 55 to +150 °C
Temperature Range
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction to RqJA 200 °C/W
Ambient
Thermal Resistance, Junction to Case RqJC 83.3 °C/W
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector – Emitter Breakdown Voltage V(BR)CES 30 — — Vdc
(IC = 2.0 mAdc, VBE = 0)
Collector – Base Breakdown Voltage V(BR)CBO 40 — — Vdc
(IC = 10 mAdc, IE = 0)
Emitter – Base Breakdown Voltage V(BR)EBO 10 — — Vdc
(IE = 100 nAdc, IC = 0)
Collector Cutoff Current ICES — — 500 nAdc
(VCE = 30 Vdc)
Collector Cutoff Current ICBO — — 100 nAdc
(VCB = 30 Vdc, IE = 0)
Emitter Cutoff Current IEBO — — 100 nAdc
(VEB = 10 Vdc, IC = 0)
Motorola Small–Signal Transistors, FETs and Diodes Device Data 1
© Motorola, Inc. 1996

2. BC517
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS(1)
DC Current Gain hFE 30,000 — — —
(IC = 20 mAdc, VCE = 2.0 Vdc)
Collector – Emitter Saturation Voltage VCE(sat) — — 1.0 Vdc
(IC = 100 mAdc, IB = 0.1 mAdc)
Base – Emitter On Voltage VBE(on) — — 1.4 Vdc
(IC = 10 mAdc, VCE = 5.0 Vdc)
SMALL– SIGNAL CHARACTERISTICS
Current – Gain — Bandwidth Product(2) fT — 200 — MHz
(IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz)
1. Pulse Test: Pulse Width v 2.0%.
2. fT = |hfe| • ftest
RS
in
en
IDEAL
TRANSISTOR
Figure 1. Transistor Noise Model
2 Motorola Small–Signal Transistors, FETs and Diodes Device Data

3. BC517
NOISE CHARACTERISTICS
(VCE = 5.0 Vdc, TA = 25°C)
500 2.0
BANDWIDTH = 1.0 Hz BANDWIDTH = 1.0 Hz
RS ≈ 0 1.0
200
0.7
en, NOISE VOLTAGE (nV)
i n, NOISE CURRENT (pA)
0.5
100 IC = 1.0 mA
10 µA 0.3
50 0.2
100 µA 100 µA
0.1
20
0.07
IC = 1.0 mA 10 µA
0.05
10
0.03
5.0 0.02
10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k 50 k 100 k
f, FREQUENCY (Hz) f, FREQUENCY (Hz)
Figure 2. Noise Voltage Figure 3. Noise Current
200 14
VT, TOTAL WIDEBAND NOISE VOLTAGE (nV)
BANDWIDTH = 10 Hz TO 15.7 kHz
12
BANDWIDTH = 10 Hz TO 15.7 kHz
100
NF, NOISE FIGURE (dB)
10
70 IC = 10 µA 10 µA
8.0
50
100 µA
6.0
30 100 µA
4.0 IC = 1.0 mA
20
1.0 mA
2.0
10 0
1.0 2.0 5.0 10 20 50 100 200 500 100 1.0 2.0 5.0 10 20 50 100 200 500 100
RS, SOURCE RESISTANCE (kΩ) 0 RS, SOURCE RESISTANCE (kΩ) 0
Figure 4. Total Wideband Noise Voltage Figure 5. Wideband Noise Figure
Motorola Small–Signal Transistors, FETs and Diodes Device Data 3

4. BC517
SMALL–SIGNAL CHARACTERISTICS
20 4.0
VCE = 5.0 V
|h fe |, SMALL–SIGNAL CURRENT GAIN
TJ = 25°C f = 100 MHz
10 2.0 TJ = 25°C
C, CAPACITANCE (pF)
7.0 Cibo
1.0
5.0 Cobo 0.8
0.6
3.0 0.4
2.0 0.2
0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 20 40 0.5 1.0 2.0 0.5 10 20 50 100 200 500
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA)
Figure 6. Capacitance Figure 7. High Frequency Current Gain
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
200 k 3.0
TJ = 125°C TJ = 25°C
100 k
2.5
70 k IC = 10 mA 50 mA 250 mA 500 mA
hFE, DC CURRENT GAIN
50 k 25°C
30 k 2.0
20 k
1.5
10 k
7.0 k
– 55°C
5.0 k 1.0
VCE = 5.0 V
3.0 k
2.0 k 0.5
5.0 7.0 10 20 30 50 70 100 200 300 500 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1000
IC, COLLECTOR CURRENT (mA) IB, BASE CURRENT (µA)
Figure 8. DC Current Gain Figure 9. Collector Saturation Region
1.6 – 1.0
RθV, TEMPERATURE COEFFICIENTS (mV/°C)
*APPLIES FOR IC/IB ≤ hFE/3.0 25°C TO 125°C
TJ = 25°C
1.4 – 2.0 *RqVC FOR VCE(sat)
V, VOLTAGE (VOLTS)
VBE(sat) @ IC/IB = 1000 – 55°C TO 25°C
1.2 – 3.0
VBE(on) @ VCE = 5.0 V 25°C TO 125°C
1.0 – 4.0
qVB FOR VBE
0.8 – 5.0 – 55°C TO 25°C
VCE(sat) @ IC/IB = 1000
0.6 – 6.0
5.0 7.0 10 20 30 50 70 100 200 300 500 5.0 7.0 10 20 30 50 70 100 200 300 500
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
Figure 10. “On” Voltages Figure 11. Temperature Coefficients
4 Motorola Small–Signal Transistors, FETs and Diodes Device Data

5. BC517
1.0
0.7
D = 0.5
0.5
RESISTANCE (NORMALIZED) 0.2
r(t), TRANSIENT THERMAL
0.3
0.2 SINGLE PULSE
0.05
0.1
0.1
0.07 SINGLE PULSE
0.05
0.03 ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t)
0.02 ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t)
0.01
0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k
t, TIME (ms)
Figure 12. Thermal Response
1.0 k
FIGURE A
700 1.0 ms
500
IC, COLLECTOR CURRENT (mA)
tP
300 TC = 25°C 100 µs
TA = 25°C PP PP
200 1.0 s
100
70
50
t1
30
CURRENT LIMIT
20 THERMAL LIMIT 1/f
+ t1 f + ttP
SECOND BREAKDOWN LIMIT
DUTY CYCLE 1
10
0.4 0.6 1.0 2.0 4.0 6.0 10 20 40
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) PEAK PULSE POWER = PP
Figure 13. Active Region Safe Operating Area Design Note: Use of Transient Thermal Resistance Data
Motorola Small–Signal Transistors, FETs and Diodes Device Data 5

6. BC517
PACKAGE DIMENSIONS
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
A B
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
R 4. DIMENSION F APPLIES BETWEEN P AND L.
DIMENSION D AND J APPLY BETWEEN L AND K
P MINIMUM. LEAD DIMENSION IS UNCONTROLLED
IN P AND BEYOND DIMENSION K MINIMUM.
L
SEATING F
PLANE K INCHES MILLIMETERS
DIM MIN MAX MIN MAX
A 0.175 0.205 4.45 5.20
D B 0.170 0.210 4.32 5.33
C 0.125 0.165 3.18 4.19
J D 0.016 0.022 0.41 0.55
X X F 0.016 0.019 0.41 0.48
G G 0.045 0.055 1.15 1.39
H H 0.095 0.105 2.42 2.66
SECTION X–X J 0.015 0.020 0.39 0.50
V C K 0.500 ––– 12.70 –––
L 0.250 ––– 6.35 –––
N 0.080 0.105 2.04 2.66
1 N P ––– 0.100 ––– 2.54
R 0.115 ––– 2.93 –––
N V 0.135 ––– 3.43 –––
STYLE 17:
CASE 029–04 PIN 1. COLLECTOR
2. BASE
(TO–226AA) 3. EMITTER
ISSUE AD
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*BC517/D*
6 ◊ Motorola Small–Signal Transistors, FETs and Diodes Device Data
BC517/D

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Datasheets for electronics components.