Placitus

Platform Circuit Technology Underlying
Heterogeneous Nano & Tera Systems
Prof. Dr. Q. Huang
12 May 2011

Outline

 Background
 Motivation
 Sensor Interface and Data Acquisition
 Body Area Network and Short Range Communication
 Wide Area Network and Cellular Link
 Summary

12 May 2011 Platform Circuit Technology Underlying Heterogenous Nano & Tera Systems 2

Great Expectations
Impressive Advances in
• Microsystems Technology
• Wireless Communications
• Internet Connectivity
Have Set the Scene for
the Next Big Thing

The Internet of Things
or M2M Communication


Great Expectations
Global Interest
• Chinese companies already
moving fast
• Chinese universities not far
behind
• National Priority and Support
 Giving us a run for our
money


Modern Healthcare Envisions
Sophisticated, Heterogeneous Systems

12 May 2011 Platform Circuit Technology Underlying Heterogenous Nano & Tera Systems

Sophisticated Electronics Needed to Bind
Sensors & Actuators Into Useful Systems


Few Can Rely on Off-the-Shelf Components
Most Require Full Custom Integrated Circuits
Cochlear Implant

Retina Implant
Defibrillator & Electronics
Cochlear Impl. Electronics


The Underlying Technologies
Sensors & Systems
Sensors Based on Micro & Nano Technologies

CSEM WL Sensor Node

ETH Implantable CSEM ISM RF SoC
Passive Telemetry IC

Nano devices above passivation?


The Underlying Platform - ICs for Medical
Data Acquisition and Communication
 Data Acquisition
 Sensor Interface
 Instrumentation amplifier (sub-µV offset, low noise)
 Signal conditioning, data conversion, calibration
 DSP and Control Loop Algorithm or Circuitry
 Energy Harvesting and Supply Regulation
 Short Range Wireless
 Incorporating wake-up radio for low duty cycle operations
 Broad Range Wireless


Project Partners

ETH Q. Huang, T. Burger
EPFL C. Deholain
CSEM C. Enz

3 Main Swiss
Institutions in
IC Research

battery powered nodes
remote powered nodes


Introduction

WBAN Require ULP Miniaturized Sensor Nodes
 Wireless body area networks
(WBAN) for health monitoring,
connecting wearable devices and as
smart user interface
 The nodes feature sensing,
processing, storing and wireless
communication
 They are usually battery powered or
use remote powering
 They require ultralow-power (ULP)
and miniaturized wireless sensor
nodes
 Combination of CMOS system-on-chip
(SoC), RF and LF MEMS in a system-
in-package (SiP) to achieve a 2.4 GHz, battery powered nodes
<mW-level, <20 mm3 node remote powered nodes

 M. Contaldo, et al., TBioCAS, Dec. 2010.
© C. Enz | 2011 Ultralow-power MEMS-based Radio for Wireless Body Area Networks Slide 11

BAN Scenario and System View
WBAN WWAN

battery powered nodes
remote powered nodes
Contaldo, Banerjee, Enz for Placitus November Meeting Slide 12

Data Acquisition and Remote Powering
INTERFACE ELECTRONICS


Passive Telemetry By ETH
Implant  Low-power, single-chip, fully-implantable micro
transponder
 Wireless powering and communication
Base-Unit
 Accurate long-term monitoring
Transmitter  Independent of time and location for diagnosis and
therapy
 Low risk of infection (no external catheter)

Monitoring setup
Systole Sensor Data
Oscillator
Supply Acquisition
Circuit

PPM-Output
Magnetoresistive A
Sensor LPN
Diastole D

Transponder Sensor

PPM-AM reflected RF
Magnet
Voltage
Rectifier Startup Modulator Regulator

Artery
t RF/DC-Converter
Antenna

Sensor-transponder-system Block diagram of microtransponder ASIC


Implantable Passive Telemetry By ETH

Chip area: 4.359 mm x 5.245 mm
2 μm 40 V BiCMOS technology

Measured characteristics of the micro transponder

RF Carrier 27/40 MHz (ISM)

Baud Rate 1 kBaud

Modulation PPM-AM

S/N Ratio 39.7 dB

Equiv. I/P-Offset 170 μV

THD (@ f=3.737 Hz, Vpp=5.8 0.16%
mV)
Power Consumption 0.5 mW

Power Consumption of Data 250 μW @ 3V
Acquisition Unit


Multiple Purpose Sensor Interface (EPFL)
Bio-electric Heart
Sensors &
Brain Activity PH; Glucose;
K+, Ca2+, Mg2+;
Bio-medical
CRP;
ISET Sensors
Motion
Detect
Thermal Couples Temperature
Accelerometer ECG-electrode
pH ISFET sensor

Sensor Type ensor
Sensor Type

Supply Voltage 1.5V 1.7-3.6V
Current
1nA 70μA 11μA Contact Resistance 100KΩ
Consumption
Sensitivity -56mV / pH 56 count/ g Signal Bandwidth 300Hz
Sampling Rate - 100/400Hz 40/10Hz Accuracy 10 Bits
Power Consumption 13nW @ pH7 ≤175μW ≤27μW


Wireless Powering of Implants in Human Body

The control unit which is placed on the body can remotely
powered the sensors and communicate with them

Remote Powering By EPFL
 Magnetic Coupling
d 
Base Station 2 Implant
Input C1 Rectifier Output
AC PA M12 Reg. DC
voltage voltage
L1 L2 C2 CL RL

 Electromagnetic Coupling

d 
2


Personal and Body Area Network
SHORT RANGE WIRELESS


Introduction

MEMS-based Short Range Transceiver Architecture
 Front-end filters before the LNA
 Interferers and image rejection, relax linearity requirements, avoid impedance matching network
 Front-end filters after the power amplifier (PA)
 Spurious filtering, avoid impedance matching network
 Synthesizer
 Fixed low phase noise RF LO thanks to high Q
 Merged Time & Frequency reference with LF silicon resonator (SiRes)

Digital Baseband
 D. Ruffieux, et al., ESSCIRC 2010.

BAW-based Class-E Power Amplifier

Transmitter Chip
 0.18µm CMOS technology
 1.25 x 1.5 mm2
 Integrated in a complete BAW-
based transceiver
 No external components in the
TX other than the BAW filter and
the BALUN for test purposes



Modulated Spectrum
 1 Mb/s GFSK 0
BT mi=0.34
-10 BT LE
BT modulation
-20 BT mask
 -21.7 dBc, -21.4
dBc @ ±500 kHz -30
dBc
 ACP 2: -42 dBm -40
 ACP 3: -49 dBm
-50

-60
BT LE modulation
-70
 ACP 2: -41 dBm
 ACP 3: -44 dBm -80
-4 -3 -2 -1 0 1 2 3 4
Frequency offset [MHz]



Power Consumption Breakdown
Block Cons. [mW] At Pout = 5.4 dBm
Synthesis 11.11
BAW DCO 2.37 23%
Dividers, ΣΔ 3.28
LC VCO 3.38
PLL div., PFD, CP 2.08
6% 55%
Selective TX 36.19
IF buffer 0.56 8%
RC/CR 2.34
SSB mixer 3.68 8%

PPA 3.82 PA PPA
PA 25.79 SSB mix RC/CR, Buf IF
Chip in TX mode 47.3 Synthesis



Prototype


Wide Area Network – Cellular Radio
BROAD RANGE WIRELESS


Integrated Systems Laboratory 26

Multi Standard RF Transceiver for WAN


GSM, EDGE, WCDMA & TD-SCDMA
64QAM TD-HSPA Rx WCDMA Band I Tx
BS,TDS:CODE POWER DR 52.8 kbps * RBW 30 kHz
Chan 1.16 * VBW 300 kHz
dB TOT CF 0 Hz Slot 4 Ref 20 dBm Att 25 dB * SWT 2 s

-7 10
Ref -14 A
0 A
0.00
-21
dBm -10
-28 1 RM
Att
CLRWR -20
0 dB -35
-42 -30

-49 -40
1 PA
CLRWR -56 -50
-63 3DB
-60
-70 3DB
Start Code 1 1 Code/ Stop Code 16
B1M
RESULT SUMMARY TABLE DR 52.8 kbps
Chan 1.16 Center 1.95 GHz 2.55 MHz/ Span 25.5 MHz
CF 0 Hz Slot 4
Tx Channel W-CDMA 3GPP REV
GLOBAL RESULTS FOR SET 0:
Bandwidth 3.84 MHz
Chip Rate Error -0.14 ppm Trg to Frame --.-- Power 23.65 dBm
Ref B
SLOT RESULTS Carr Freq Err -72.46 Hz
0.00 Adjacent Channel
dBm
P Data -8.12 dBm IQ Imbal/Offs 0.12/0.51 %
Bandwidth 3.84 MHz Lower -45.20 dB
P D1 -8.20 dBm RHO 0.9986
Att
0 dB
P D2 -8.05 dBm Composite EVM 3.77 % Spacing 5 MHz Upper -44.54 dB
P Midamble -7.64 dBm Pk CDE(SF 16) -36.11 dB
Active Channels 1 Average RCDE -40.04 dB Alternate Channel
CHANNEL RESULTS Bandwidth 3.84 MHz Lower -55.36 dB
1
AVG
Channel.SF 1.16 Data Rate 52.8 kbps Spacing 10 MHz Upper -55.93 dB
ChannelPwr Rel -0.01 dB ChannelPwr Abs -8.13 dBm 3DB
Symbol EVM 1.00 %rms Symbol EVM 2.31 %Pk

GSM Tx
Modulation Spectrum * RBW 30 kHz
EDGE Tx * RBW 30 kHz
Modulation Spectrum
* VBW 30 kHz * VBW 30 kHz
Ref 10 dBm * Att 10 dB * SWT 1 s Ref 5 dBm * Att 10 dB * SWT 1 s

10
LIMIT CHECK PASS 0 LIMIT CHECK PASS
0

1 AV GAT -10 GAT
1 AV
AVG TRG TRG
-10 AVG

-20
-20

-30
-30

-40
-40

SWP 4 of 200
3DB -50 SWP 4 of 200
3DB
-50

-60
-60
MODU_E
-70
MODU_G
-70

-80
-80

-90 -90

Center 915 MHz 100 kHz/ Span 1 MHz
Center 915 MHz 100 kHz/ Span 1 MHz


Digital Baseband Evolved EDGE
(E‐EDGE)

• International Solid‐State Circuit Conference 2010

• GSM/GPRS/EDGE
Prototype  2 modulation types
IC #1  15 coding schemes (CS)
1mm2
• Low cost channel equalizer
• Flexible Viterbi decoder
Prototype
IC #2
2mm2

• Supports also Level‐A E‐EDGE  4 modulation types, 23 CS
• Efficient solution for 16QAM/32QAM channel equalization
• Flexible Viterbi and Turbo decoder with shared memories


IC #1 IC #2
Core size 1.0mm2 2.0mm2 Achieve throughput
Max clock frequency fmax 172MHz 151MHz requirements with
Leakage current 0.49mA 0.6mA ftarget=40MHz

Continuous burst reception (8 time slots)
Avg power at ftarget=40MHz and VDD=1.2V
Scale supply voltage
GPRS CS1 (GMSK) 2.4mW 6.8mW
EDGE MCS9 (8‐PSK) 5.2mW 11.2mW
Less than 5mW
E‐EDGE DAS12 (32QAM) ‐‐‐ 19.9mW
in fastest mode

Turbo Decoder ASICs for
WCDMA‐HSDPA and LTE

• International Solid‐State Circuit Conference 2008 • International Solid‐State Circuit Conference 2010
• Journal of Solid‐State Circuits 2009 • Journal of Solid‐State Circuits 2011

Our ISSCC ISSCC ISSCC
Units
Early termination
chip 2003 2002 2002
 Less than 10mW
UMTS
UMTS, UMTS, in high SNR regimes
Standard UMTS (cdma
HSDPA HSDPA
2000) 60
10.8Mb/s
CMOS 0.13 0.18 0.18 0.25 μm

Power [mW]
Die size 1.2 14.5 9.0 8.9 mm²
fixed VDD and fclk
Max. Θ
18.6 24 4.1 5.5 Mb/s
@ 6 iters
Power 57.8 956 292 mW
n.a.
@ (iters) (10.8) (10.8) (2.0) Mb/s 10
scaled VDD and fclk
Energy nJ/b
0.7 11.1 14.6 6.9
Efficiency /iter 0.5 Eb/N0[dB] 4.5

Smallest die size, lowest power consumption
and best energy efficiency published so far

• First-generation LTE terminals will target ~100Mb/s
• Maximum LTE throughput is 326.4Mb/s in downlink

• Low-power turbo decoding for HSPA+ requires 57.8mW
• 8 -28 x higher power consumption is not tolerable

• 8 x radix-4 MAP
decoder cores

• Master/slave Batcher
network for efficient
address mapping

• Implementation loss
within 0.14dB SNR


power measurements conducted at T=300K for block‐size 3200

power measurements conducted at T=300K for block‐size 3200

• LTE maximum throughput requires 503mW
• 100Mb/s milestone requires only 68.6mW

Our ASIC achieves 10x higher throughput at the same
power required by a state‐of‐the‐art HSDPA turbo decoder


Summary
 Internet of Things Builds on Synergy of Three Major Fields
 Circuit Technology Platform Is a Pillar for Medical Electronics
 The Placitus Consortium Aims To Create Low Power and
Highly Integrated Solutions
 Data Acquisition, Remote Powering, Short Range Radio and
WAN module Are Among the Focuses
 Early Results Are Promising
 Much Is Still To Be Done


Soft‐In Soft‐Out MMSE Parallel
Interference Cancellation

• European Solid‐State Circuit Conference 2010
• Journal of Solid‐State Circuits 2011
• Swisscom Award 2010

63mm

7.8mm

63mm
2x2 exhaustive 3x3 exhaustive 4x4 exhaustive
search detector search detector

7.8mm
search detector 64-QAM 64-QAM
64QAM

1.0mm
1.0mm

• Complexity grows exponentially in the number of Tx antennas
• Example: IEEE 802.11n WLAN would require evaluation of up to
0.5 quadrillion (0.5∙1015) candidate vectors per second
• Smarter way: Sphere Decoder (STS‐SD)  still very complex


soft‐info
SISO
best
Iteratively exchange
channel
MIMO iterations soft‐information
decoder
y
detector
a‐priori info  tremendous gain
100
SISO STS‐SD
• Parallel Interference Cancellation SISO MMSE‐PIC
(PIC) cancels spatial interference soft‐output
iterative
10‐1 MIMO MIMO
decoding decoding
• MMSE‐PIC close to (optimum)
Sphere Decoder performance 7dB
10‐2

• MMSE‐PIC significantly less
complex 10‐3
2dB
6 8 10 12 14 16 18 20 22 24


• Supports four Tx antennas
MMSE filter & • Compliant to 802.11n WLAN
soft information
PIC
1.225mm

Clock frequency 560MHz
matrix
pre- inversion Core area 1.5mm2
process
Data rate 750Mb/s
I/O Power consumption 190mW

1.225mm


Phase-ADC

Phase Analog-to-Digital Converters – Basics
 Phase demodulation can be performed directly in the phase domain without the
need for a multi-bit - ADC

I in (t )  cos (t ) 
111

111 Qin (t )  sin  (t ) 
0001'1

0000'1
11

11
'11

'01
N=4
11

00
00

00

I in,k (t )  I in (t )  cos k 
Qin,k (t )  Qin (t )  sin  k 
k 
k   with k  0 2 N  1
10
N 2
00
'00
00
1

11
11

00
1111'0
1'1

1110'0

I k  I in,k (t )  Qin,k (t )  cos (t )   k 
'00
00 0

00
000

000

 S. Samadian, et al., JSSC, Aug. 2003.

Phase-ADC

Phase ADC – Coding

111

111
0001'1

0000'1
11

11
'1 1

'01
11

00
00

00

10
00
'00
00
11

11
11

00
1111'0

1110'0
'10

'00
00

00
000

000


Phase-ADC

Final 4-bit Phase ADC Architecture
I(0+) Pre-
amplifiers comparators
V(0+)
Latch 1
V(0+)

R
I(1
VI+ I(0+) C1

)
5+
V(157-) V(22+) V(0-)

R
gm

35
VI- I(0-)

I(4
-)
L

R
Latch 2
VI+ V(45+) V(22+)

R
V(135-) 2R C2
gm/2
I(45+) V(22-)
VQ-

R
I(45+) V(112-)

2R
V(67+)

R
VI-

2R
gm/2

R
VQ+ I(90-)
R
VQ+ I(90+) I(90+)

2R

2R
V(90+)
R
gm V(90-)
VQ- I(90-)

2R

R
V(67-) V(112+)

2R
R
VQ+ gm/2
I(135+)

R
VI+ V(45-) 2R V(135+)
I(135-)
R
VQ-

R

I(1
gm/2
)

V(157+) V(157+) Latch 8
5-

VI- V(22-)

35
R
C8
I(4

V(157-)

+
R

)
V(0-)

I(0-)

 B. Banerjee, C. Enz, E. Le Roux, ISCAS, 2010.

Switzerland Is a Leader
in ICs for Microsystems and Wireless
 Three teams each a leader internationally
 Skill sets complementary to each other
 EPFL & ETH in data acquisition and energy harvesting
 CSEM in modeling, short range wireless and protocol
 ETH in wide range wireless and sensor interface
 Combined to cover complete technology platform for
miniaturized medical and other systems
 Concentration of know-how unrivalled by other countries


Excellent Track Record


In the Grand Scheme of Things
 The Technology Haves and Have-Nots
 Access to semiconductor manufacturing deprived in Europe
 Asian universities better funded in microelectronics
 Stakes are too high to be complacent

 Knowledge-Based Economy More Critical than Ever
 Labor abundance favors Asia in manufacturing
 CH/EU must retain/create high value-add industries

 No Wealth Generation without Products
 No products without a system (Lab sensors alone don’t suffice)
 Circuit/system technology platform underlying it all


More Than Just Wearable
Integrated Circuits Serve Many Prolific Sectors

 Medical Electronics
 Global annual revenue ~ 125bn USD
 Growing at 7.2% per annum in next 5 years

 Cellular Communications Hardware
 Global annual revenue ~ 210bn USD
 Swiss GDP
 490bn USD in 2008


Holding Our Own
In Research and Entrepreneurship
 Amongst Top Ten at Chip Olympics
Accepted Papers at ISSCC 2010
75% by the proposers
100
10
1

 At forefront in tech transfer
100 Spin-Off Companies Per Year
10
1


What Circuit Technology Can Do
- Making A Difference at Top Tier
ETH Startup Supplies RF Transceiver To Tier-
One Mobile Phone Vendors
ETH Startup Sold GPS Platform to Qualcomm
ETH Startup Supplies Home Networking Kits

Nokia Samsung
BlueEarth Samsung
6788 SGH-F480i
TCL: T36 Konka: E3
Samsung: NC10 Dell: Inspiron Mini 10 Hasee: Q130T

Demonstrators
 Universal Data Acquisition System for (Remotely
Powered) Sensor Networks
 Applicable to a wide range of sensors
 With continued collaborations with sensor groups
 Short Range Wireless System on a Chip for Body Area
Networks
 Relay acquired sensor info to a more powerful WL link
 Wide Area Wireless System on a Chip
 Relay information to monitoring centers


Sensor Interface and Data Acquisition


Some of the Challenges

• Large CM Voltage
• Differential Offset
• Low noise instrumentation
• Multi channel capability
• Low power drain

Z  Z Z  Z  Zs2 Z i1  Z i 2
Vd  Vc  s  s  i  Z s  s1 Zi 
 Z Zi  2
Zi  s  2


Multi Channel EEG Interface by ETH


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