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H,w ~  pti('~l lithogtaphy technique used in various image prrnt mg on
$lh ..:~:'1n :tX~t·'.~}·:~plnin. (16)
Or
(b) E pluin various methods of technique involved in electron lithography.
(l6)
1 '- (l.) E~pl~untlw followm y toward plasma assisted deposition
(1) Deposition ariable
(n} Prt)p('rt.it ..'~ of PD films.
(8)
(8)
Or
(b) E plain the atomic diffusion mechanism. (16)
14. (a) Explain the gate materials and threshold adjustment
fabrication.
in NMOS
(16)
Or
(b) Discuss the modeling for etching and deposition in VLSI. (16)
(16)154 (a) ~lain the various packaging design Considerations.
Or
~atttt in VLSI assembly technoloeY
'.lGUliand
Wire bonding.
(4)
(4)
(4)
(4)
2 71877

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  • 1. H,w ~ pti('~l lithogtaphy technique used in various image prrnt mg on $lh ..:~:'1n :tX~t·'.~}·:~plnin. (16) Or (b) E pluin various methods of technique involved in electron lithography. (l6) 1 '- (l.) E~pl~untlw followm y toward plasma assisted deposition (1) Deposition ariable (n} Prt)p('rt.it ..'~ of PD films. (8) (8) Or (b) E plain the atomic diffusion mechanism. (16) 14. (a) Explain the gate materials and threshold adjustment fabrication. in NMOS (16) Or (b) Discuss the modeling for etching and deposition in VLSI. (16) (16)154 (a) ~lain the various packaging design Considerations. Or ~atttt in VLSI assembly technoloeY '.lGUliand Wire bonding. (4) (4) (4) (4) 2 71877