Fab presentaion

WAFER PROCESSING EQUIPMENT
AND

CLEAN ROOM INVENTORY
FOR A RESEARCH BASED IC FABRICATION FACILITY

SAMI UR REHMAN (sami-
rehman.blogspot.com)
1

SAMI UR REHMAN

Difference between Si wafer processing
and compound (III/V) wafer processing

Oxidation
Silicon has a natural oxide while compound semiconductors

do not (deposition required). Compound semiconductor
requires epitaxial deposition techniques which are quiet
expensive!
Stability
Most of these compound semiconductors are not stable at
high temperatures unlike Si. For Si, one would therefore make
MOSFET kind of structures. 2

Difference between Si wafer processing
and compound (III/V) wafer processing

Lattice Constants
The first and principal difference between a Si
and a GaAs substrate is the respective lattice

constants. Crystalline materials (thin films) which
will be deposited on top of such substrates will
have to take this into account.
Etching
Compound semiconductors like GaAs also
requires a complex Chlorine based etch process
unlike Si (F based etch). 3

WHAT IS A CLEAN ROOM?

• A clean-room or clean room is an environment, typically
used in manufacturing and scientific research, that has a low
level of environmental pollutants such as dust,
airborne microbes, aerosol particles and chemical vapors
(Wikipedia)

• What matters is Particle size and particle number
• The standard is called: FED-STD-209 E
• This standard was cancelled on Nov 2011
• Standardizing Agency: U.S. General Services
Administration (GSA)
• Replaced by ISO 14644-1 4

CLEAN ROOM
CLEAN ROOM STANDARDS

Particle Counters are used to determine the air quality by counting and sizing the
number of particles in the air.
This information is useful in determining the amount of particles inside a building or 5
in the ambient air
It also is useful in understanding the cleanliness level in a controlled environment.

Cost Analysis

• Quotations have been sent
• SANCO
• Rough estimates of the equipment have been obtained from:

6

CLEAN ROOM
PARTICLE COUNTERS

Manufacturer Capovani Brothers Inc
Model PARTICLE MEASURMENT SYSTEMS LPS A-310
Price $ 7,350.00 (each)
Year of 2001
Manufacture
Dimensions Width8.750 in (22.2 cm) Depth18.000 in (45.7 cm) H

eight7.000 in (17.8 cm)
Weight 30 lb (14 kg)
Accessories/Othe Maximum Number of Channels =4
r Information Channel Sizes= 0.3, 0.5, 1.0, 5.0 µm
Light Source=HeNe Multimode, Passive Cavity

7
$7,350

CLEAN ROOM
PARTICLE COUNTERS

Manufacturer Pacific Scientific
Model MET ONE
Price $ 4,250.00
Year of 2001
Manufacture
Dimensions Width13.000 in (33.0 cm) Depth12.000 in (30.5 cm) Heig

ht7.000 in (17.8 cm)
Accessories/Other Part no.: 331-3-1-AL
Information
Particle size: 0.3 to 10 Micron

8
$4,250

CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Air Control Inc.
Model VLF CART
Price $ 3,250.00
Year of Manufacture 1998
Dimensions Width 74.000 in (188.0 cm)

Depth 21.000 in (53.3 cm)
Height 74.000 in (188.0 cm)

Weight 5,459 lb (2,476 kg)
Accessories/Other Unit contains a 9W X 10H array of
Information stainless steel cubicles (6.25"W x 4"H
x 11"D)
Blower: (2) EBM's STD 9
Prefilter #: (2) 16 x 20 x 1
$3,250
Hepa Filter #: (1) 18 x 48 x 3

CLEAN ROOM
AIR CONDITIONER/AIR FLOW CONTROLLER

Manufacturer Air Control Inc.
Model AirPod
Price
Year of Manufacture
Dimensions Width: AirPod I: 62.50”, AirPod II:
80.50”, AirPod III: 104.50”

Height: 31.00”
Depth: 31.00”

Weight Weight (lbs): AirPod I: 312, AirPod II:
394, AirPod III: 455
Nominal Air flow: 2500 CFM (3/4 HP), 5000 CFM (3HP),
Accessories/Other 4000 CFM (3HP with AD after-filter).
Information Blower Pkg (HP): AirPod I: 2-speed forward curve,
direct drive; AirPod II & III: Dynamically balanced, non-
sparking, motor/blowers. (Optional 2-speed
motor/blower available for AirPod II.) 10
Electrical: AirPod I, standard: 115/1/60, 11.4 amps, 3/4
HP; AirPod II & III, standard: 208-230/460/3/60, 7.8-
7.2/4 amps, 3 HP; optional: 230/1/60 11.7 amps, 3 HP.
$3,000

IC FABRICATION PHILOSOPHY!
Adding impurities in
Adding layer onto wafer!
wafer!

Deposition Implantation

Removing an added layer! Photolithography

11

Etching

III/V Group ingot production

Similar to the silicon ingot growth process, elemental
forms of III and V group elements, plus small quantities
Quartz Tube
of dopant material-silicon, Rotating Chuck
tellurium or zinc-are reacted at

Seed Crystal

elevated temperatures to Growing Crystal
(boule)
form ingots of doped single-
crystal III/V material like GaAs.
RF or Resistance
Heating Coils

Molten Silicon
(Melt) 12
Crucible

Photomask Creation

• The photomask is a copy of the circuit pattern,
drawn on a glass plate coated with a metallic film.
• The glass plate lets light pass, but the metallic film
does not.
• Due to increasingly high integration and

miniaturization of the pattern, the size of the
photomask is usually magnified four to ten times
the actual size.

13

PHOTOLITHOGRAPHY

Wafer processing consists of a sequence of
additive and subtractive steps with patterning!!!!!
oxidation
deposition etching lithography
ion implantation

Lithography refers to the process of transferring a circuit pattern,
embedded on a mask, to the surface of the wafer
Equipment, materials, and processes needed:
• A mask (for each layer to be patterned) with the desired pattern
• A light-sensitive material (called photoresist) covering the wafer so as to receive
the pattern
• A light source and method of projecting the image of the mask onto the
photoresist (“printer” or “projection stepper” or “projection scanner”)
• A method of “developing” the photoresist, that is selectively removing it from the 14
regions where it was exposed
Photolithography is a process analogous to developing film in a darkroom

PHOTOLITHOGRAPHY STEPS

• 1 # PRE BAKE THE WAFER
Wafer is preheated to about 200 - 250 degrees C in a bake
oven. The purpose of this step is to ensure that the wafer is
completely dry. Any moisture on the wafer surface would
interfere with the photolithography process, causing it to yield

poor results.

15


• 2 # PHOTORESIST APPLICATION AND SPINNING
• The wafer is placed on the wafer chuck in the center of the
Photoresist Spinner. After properly adjusting the wafer on the
spinner, photo resist material is applied onto the surface of
the wafer and is spun so that photo resist evenly distributes

on the wafer
• Using the Nitrogen Gun,
now the wafer surface is
Blown to remove any dust
particles.
16

Photoresist Raw Materials

http://www.mitsuichemicals.com/photoresist.htm

17

Photo resist properties

http://www.cleanroom.byu.edu/photoresists.phtml

18

Photoresist Spin Coater

PR
Wafer

EBR
Water
Sleeve

Chuck
Drain Exhaust

Vacuum

19

Photoresist Applying

PR dispenser
nozzle

Wafer

Chuck
Spindle

To vacuum pump
20

Photoresist Suck Back

PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
21

Photoresist Spin Coating

PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
22


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
23


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
24


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
25


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
26


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
27


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
28


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
29


PR dispenser nozzle
PR suck back

Wafer

Chuck
Spindle

To vacuum pump
30

Edge Bead Removal

Solvent

Wafer

Chuck
Spindle

To vacuum pump
31

Edge Bead Removal

Solvent

Wafer

Chuck
Spindle

To vacuum pump
32

Optical Edge Bead Removal
Exposure
Light source

Light beam Photoresist

Wafer

Exposed Chuck
Photoresist Spindle

33


• 3 # SOFT BAKE
• The wafer is placed into the Soft-Bake Oven for 30 minutes.
• The purpose of the soft bake is to semi-harden

the photoresist

34

Methods of Soft Bake

• Hot plates
• Convection oven
• Infrared oven

• Microwave oven

35

Baking Systems

Wafer MW Source
Photoresist

Heater Heated N 2

Chuck
Wafers

Vacuum Wafer
Heater Vacuum

Hot plate Convection oven Microwave oven
36

Hot Plates

• Widely used in the industry
• Back side heating, no surface Wafer

“crust”
Heater
• In-line track system

37

• 4 # EXPOSE TO UV LIGHT
• carefully place the wafer on the wafer chuck of the Aligner
• When the wafer has been properly aligned to the mask,
expose it to UV light

• the exposure time should be set according to the particular
type of photo resist and wattage of the bulb being used.

38

Alignment
Gate Mask

Photoresist
Polysilicon
n+ n+
P-Well 39

Exposure
Gate Mask

Photoresist
Polysilicon
n+ n+
P-Well 40

Ready for Post Exposure Bake

Photoresist
Polysilicon
n+ n+
P-Well 41


• 5 # DEVELOPMENT
• The type of developer solution used is determined by the
type of photoresist chosen.
• Then we check the developer for the recommended

development time. Typically, this will be around 30 seconds
• Then the wafer is immersed in the developer and agitate
mildly until the time has expired.
• Finally the wafer is rinsed with ionized water

42

Schematic of a Spin Developer
DI water Developer
Wafer

Water
sleeve

Chuck

Drain

Vacuum
43

Applying Development
Solution

Exposed Development solution
Photoresist dispenser nozzle

Wafer

Chuck
Spindle

To vacuum pump
44

Applying Development
Solution

Exposed
Photoresist

Wafer

Chuck
Spindle

To vacuum pump
45

Developer Spin Off

Edge PR removed Patterned
photoresist

Wafer

Chuck
Spindle

To vacuum
pump 46

DI Water Rinse

DI water
dispenser
nozzle

Wafer

Chuck
Spindle

To vacuum
pump 47

Spin Dry

Wafer

Chuck
Spindle

To vacuum pump
48

Ready For Hard Bake

Spindle
Chuck
Wafer

49


Development Profiles

PR PR

Substrate Substrate

Normal Development Incomplete Development

PR PR

Substrate Substrate

Under Development Over Development 50

Developer Solution
• +PR normally uses weak base
solution
• The most commonly used one is

the tetramethyl ammonium
hydride, or TMAH ((CH3)4NOH).

51

Developer Solutions

Positive PR Negative PR
Developer TMAH Xylene

Rinse DI Water n-Butylacetate

52


• 6 # HARD BAKE THE WAFER
• The wafer is placed into the Hard Bake oven now which
should be preheated to between 120-130 degrees C.
• The wafers should remain in the hard bake oven for 30

minutes. This prepares the wafer for the next processing step.

53

Types of Photoresist

Negative Photoresist Positive Photoresist
• Becomes insoluble • Becomes soluble

after exposure after exposure
• When developed, • When developed,
the unexposed the exposed parts
parts dissolved. dissolved
• Cheaper • Better resolution
54

Negative and Positive Photoresists
Photoresist
Substrate

UV light
Mask/reticle

Photoresist

Exposure
Substrate

Negative
Photoresist
Substrate After
Positive Development
Photoresist
Substrate 55

Comparison of Photoresists

- PR + PR
Film Film

Substrate Substrate

56

Wafer In
Hot Plate Spin Station

Stepper

Track Robot

Developer Hot Plate
dispenser Track
57

Pre-bake and Primer Vapor
Coating

Stepper

Track Robot

Developer Hot Plate
dispenser Track
58


Stepper

Track Robot

Developer Hot Plate
dispenser Track
59

Soft Bake

Stepper

Track Robot

Developer Hot Plate
dispenser Track
60

Alignment and Exposure

Stepper

Track Robot

Developer Hot Plate
dispenser Track
61

Post Exposure Bake (PEB)

Stepper

Track Robot

Developer Hot Plate
dispenser Track
62

Development

Stepper

Track Robot

Developer Hot Plate
dispenser Track
63

Hard Bake

Stepper

Track Robot

Developer Hot Plate
dispenser Track
64

Wafer out

Stepper

Track Robot

Developer Hot Plate
dispenser Track
65

Resolution
• The achievable, repeatable
minimum feature size
• Determined by the wavelength of

the light and the numerical
aperture of the system. The
resolution can be expressed as
66

Resolution

K1
R
NA

• K1 is the system constant
 is the wavelength of the light
NA = 2 ro/D, is the numerical aperture
67

Numerical Aperture
• NA is the ability of a lens to collect diffracted
light
• NA = 2 r0 / D

– r0 : radius of the lens
– D = the distance of the object from the lens
• Lens with larger NA can capture higher order
of diffracted light and generate sharper image.
68

To Improve Resolution
• Increase NA
• Larger lens, could be too expensive and unpractical
• Reduce DOF and cause fabrication difficulties

• Reduce wavelength
• Need develop light source, PR and equipment
• Limitation for reducing wavelength
• UV to DUV, to EUV, and to X-Ray
69

Depth of focus

• The range that light is in focus and can achieve good resolution of
projected image
• Depth of focus can be expressed as:

K 2
DOF  2
2( NA)
70

Depth of Focus
• Smaller numerical aperture, larger DOF
• Disposable cameras with very small lenses
• Almost everything is in focus
• Bad resolution

• Prefer reduce wavelength than increase NA to improve
resolution
• High resolution, small DOF
• Focus at the middle of PR layer

71

Photolithography
MASK ALLIGNER
Karl Suss MA-6 Mask Aligner
$69,000
Description
Can handle Si and Compound
semiconductor wafers

Up to 6"in size
240 nm to 365 nm wavelength.
1:1 exposure system
Maximum wafer thickness:
4.3mm
Alignment accuracy of +-0.5um 72

Photolithography
MASK ALLIGNER
Mask-aligner EV-420

Description

Contact mask-aligner for
optical lithography
Double side exposure
Lamp power: 350 W
Illumination spectrum: no
filters
73

Photolithography
MASK ALLIGNER
Manufacturer SussMicrotec
Model BLE RESPECT 600
Accessories/ Other Specifications
400 V 16 A 50 Hz
System features

 Programmable controller
 PC with windows NT4SP6 and
applications program Respect
1.0b0087/1.1b0002
 Touch screen
 RS 232 Interface
 Vacuum monitoring
 External cabinet exhaust
connection
 Automatic exhaust control 74
 Media control panel
 Silicon and compound
semiconductor wafers

Photolithography
SPINNERS
Solitec 5100 LVT $30,000
•Provides spin processing of single wafers/substrates
of up to 225mm diagonal
•Tools for loading and centering for:
4 inch (100 mm) substrate
2 inch (50 mm) substrate

Solitic is the main manufacturer of this equipment, Various models from the
same Company shown below

75

Photolithography
BAKE OVENS

Yes 450pb oven
Description:

The 450PB is a high temperature vacuum oven using a programmable temperature
controller and programmed vacuum and nitrogen flow cycles for curing of polyimide films.
The unit features filtered heated nitrogen purging from the entire surface of the roof

through the floor of the chamber. This flow acts to clean the wafers during the process.

$22,500
Specs

Capacity: Up to two boats of 6
inch wafers
Ramp: 8°C/min
Cool-down: 1-2°C/min 76
Max Temperature: 400°C
Idle Temperature: 50°C

WAFER PROCESSING
• CVD
• PECVD

Deposition • PVD
• SPUTTERING
• EVAPORATION
• MBE

• DRY ETCHING
Etching • WET ETCHING

Ion • DIFFUSION
• ANNEALING
implantation
77

CHEMICAL VAPOR DESPOSITION

Chemical Vapor Deposition is the formation of a
non-volatile solid film on a substrate by the reaction
of vapor phase chemicals (reactants) that contain the

required constituents.

78

CHEMICAL VAPOR DESPOSITION

• Gases to be reacted are entered into the CVD
chamber and react to produce the desired
material to be deposited on the wafer under
extremely high temperature.

• Wafer temp is cooler than the furnace
• Changing the reacting gases we can produce any
material to be deposited

79

PECVD

• PECVD uses two electrodes one of which
contains the wafer
• A strong electric field b/w the electrodes ignites
the plasma which decomposes the reactant

gases into the material to be deposited on the
wafer substrate.

80

SPUTTERING

• High energy plasma knocks metal atoms out of
its crystalline structure and are deposited on the
wafer substrate!
• Mainly used for

creating metal
contacts (Aluminum,
Titanium etc)

81

SPUTTERING
PVD75 RF Sputterer

Description
•The RF sputterer can be used to deposit many dielectrics.
•Sputter two or more dissimilar materials simultaneously
•for complete control of film stoichiometry (co-deposition)
•Integrated touch screen control

•Single substrate up to 12" diameter
•Multiple substrate up to 4" diameter
•Substrate fixture rotation up to 20rpm

$60,000
82

SPUTTERING
ARC-12M sputtering system

Gases available: Ar, O2 & N2
- DC sputtering power source: 2 x
250W $55,000
- RF sputtering power source: 600W at

13.56MHz
- Chamber pressure: 5x10-6 torr
- Substrate size: 2”, 4” wafer or square
glass, or specimen

- Targets available: Ag, Al, Al/Si (1%), Au,
Cu, Cr, Hf, Mo, Pt, SnO2, SiN, Ti, TiW
83

http://www.mff.ust.hk/Eq_Sputter.htm

SPUTTERING
CVC DC Sputterer

Description
The DC sputterer is used to coat samples with metals. Metal coatings
are usually performed with this sputterer or with the CVC E-Beam
evaporator. -Process wafers/substrates up to 6" -Computer-controlled
planetary system for uniform deposition -Two 3" and two 8" sputter

guns
Capabilities
Deposition - Metal Deposition - Aluminum
Chromium
- Copper
Gold
Iron
Nickel $55,000 to
Palladium 110,000 84
Platinum
Ruthenium

EVAPORATION

• Metal atom to be deposited are held in a
tungsten coil which carries huge currents
• The metal evaporates under intense heat and
finally deposits on a relatively cooler wafer.

85

EPITAXIAL DEPOSITION
THERMAL EVAPORATORS

• Denton SJ20C
• SOURCE: University of UTAH
• Description
• 4 source hearth

• Film thickness
monitor/deposition controller

$30,000
86

EPITAXIAL DEPOSITION
MOLECULAR BEAM EPITAXY

http://department.fzu.cz/surfaces/mbe/soubory/mbe/mbe_method.htm

The MBE process during the epilayer growth on GaAs substrate.
Typical working temperatures of the effusion cells :
Ga ~1000oC, Al ~1100oC, As ~300oC, Be ~900oC, Si ~1100oC. 87

WET ETCHING

• Various mixtures of wet-chemical acid solutions are used
for wet etching.
• The primary acids used are sulphuric , hydrofluoric (HF),
hydrochloric (HCl) and phosphoric . As in silicon
processing, hydrogen peroxide is used with sulphuric

acid, and ammonium hydroxide provides a caustic etch.
• A cyanide solution (sodium or potassium) is also used for
etching aluminium.
• As an alternative to wet etching, a plasma etching and
process is used.
• The reactor configurations and reactant gases are very
similar to those utilized in silicon device processing. 88

PLASMA ETCHING

• In this form of etching, plasma is used to
produce chemically reactive gases which are
then made to react with the material to be
etched on the wafer substrate!

89

PLASMA ETCHING
OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to
selectively etch III-V group and metals on planar substrates
up to 200mm in diameter under variable temperatures.
Applications:
High-temperature InP etching

Physical milling of most III-V semiconductors
Reactive etching of III-V semiconductors
Reactive etching of metals
Example Use:
III-V material and Metals etch

90

PLASMA ETCHING
OXFORD PLASMALAB 100

Oxford Plasmalab 100: Highly flexible plasma etcher to
selectively etch III-V group and metals on planar substrates
up to 200mm in diameter under variable temperatures.
Applications:
High-temperature InP etching

Physical milling of most III-V semiconductors
Reactive etching of III-V semiconductors
Reactive etching of metals
Example Use: $29,000
III-V material and Metals etch

91

PLASMA ETCHING ICP
Metal Etcher-Unaxis SHUTTLELINE ICP

Chlorine-based system utilizing Boron
Trichloride and Chlorine to etch metals $120,000
and III-V group materials on planar
substrates up to 150mm in diameter.
ICP: 2.0 MHz 2500W

RF: 13.56 MHz 300W
Gases: Cl2, Ar, BCl3, SF6, O2
Applications:
Anisotropic etching of metal films
Etches Chromium, Aluminum, and other
Chlorine-based etchable metals
Other materials etchable by SF6, Ar, and
O2 92

Demonstrated Use: Al, Cr and GaAs
quantum dots and SiC etch

PLASMA ETCHING
SAMCO RIE200iP

Manufacturer: SAMCO International
Classification: Dry Etch
Equipment: Inductively coupled plasma
etching

Uses:
Etching of InP, GaAs, and other III-V
compounds, SiNx, SiO2, and photoresist
Etch gases Cl2, SiCl4, BCl3, Ar, CF4, CHF3,
and O2
http://www.princeton.edu/mnfl/the-tool-
list/samco-rie200ip/
93

EQUIPMENT
METROLOGY AND INSPECTION

94


SURFACE PROFILER
Tencor Sono Gauge 300

For single point measurement of Wafer thickness,
Aluminum film thickness and Sheet resistance of metal film.

Wafer Diameter : 3”, 4”, 5” and 6”
Substrate Thickness : 250-700 μm

Sheet Resistance : 1 to 1999 Ω/sq. $6,800
Minimum Metal Film Thickness : 100Å

95

PARAMETER ANALYSER
HP 4145B Semiconductor Parameter Analyzer

Specs
$4,500

• In/Out Ports : 8
• Source/Monitor Unit : 4
• Voltage Source : 2

• Voltage Monitor : 2
• Voltage Resolution : 1 mV
• Current Resolution : 1 pA
• Maximum Voltage : 100 V
• Measurement Function : DC current through voltage-biased or
current-biased devices
96

PROBE STATION
Signatone S-1160 Manual probe station

Specs

• Microscope of 10x to 70x magnification $5,500
• 4 Micropositioners in S-926 series
• X-Y-Z motion : 254 microns per knob revolution

• Tip diameter : 4 microns
• Vacuum chuck
• Max. accept a 6”wafer
• Temperature from room temp.
to 300℃

97

STRESS MEASUREMENT SYSTEM
Film Stress Measurement System SMSi 3800

Measure the change of curvature induced in a sample due to the
deposited film on a reflected substrate.
Measure 1-D stress and produce 3-D topographical profile
Specs
• Wafer size : 2” to 8”

• Thickness Limit : less than 11 mm
• Statistical process control and spreadsheet compatibility
• Automatic segmentation calculation

$3,500
98

WET BENCH
Amerimade 8ft Polypro Wet Bench

Construction: Polypro wet bench
- Length: 8ft $10,000

- Teflon Heated Bath Tanks (Qty 3):
a. can handle up to 6" wafers
b. Dims: 7"x10"x10" (WxDxH)
c. Immersion heater at bottom of tank
d. Temperature controllers for each tank

- Teflon Static Bath Tank (Qty 1):
a. can handle up to 6" wafers
b. Dims: 7"x10"x10" (WxDxH)
c. Immersion heater at bottom of tank
d. Temperature controllers for each tank

- Teflon Rinse Sinks (Qty 2):
a. Dims: 5.5"x9"x5" (WxDxH)
DI Spray Gun
- 1 Amerimade Bath Timer 99
- 2 Photohelic Exhaust Monitors
- 5 Tank Fill Buttons
- 4 Alarm Buttons

WET BENCH
JST 4ft Stainless Steel Wet Bench

Model: JST STA00115
- Overall Length: 4ft
- Dimensions: 48"x50"x82" (LxWxH)
- All tanks sized for single 4"/100mm cassette
- All tanks programmed via PLC controller
- Automatic wafer handling (cassette) via robot

- Heated Recirculating Stainless Steel Tank:

a. Tank is heated and recirculating
b. White Knight Pneumatic Pump
c. Tank Lid
d. Tank dimensions: 7.5"x7.25"x15" (LxWxH)
e. Condenser

- Quick Dump Rinse (QDR) Tank:
a. Dimensions: 7.5"x7.5"x5" (LxWxH) $10,000
b. Controlled via PLC controller
c. Tank Lid
100
- Static Stainless Steel Tank:
a. Tank dimensions: 7.5" x 7.5" x 7" (LxWxH)
b. On/Off Drain

MICROSCOPES
AMERICAN OPTICAL STEREO ZOOM MICROSCOPE 7X - 42X

Unit Price $ 525.00
Number of Units 1
Manufacturer American Optical
Model 570

Binocular Angle 45°
Eyepieces

Magnification 10 X
Magnification Range 7 X - 42 X
Zoom Range 0.7 X - 4.2 X
Illumination Type None
Stand Type None 101
Condition Very Good
$525

MICROSCOPES
OLYMPUS GSWH20X/12.5
Unit Price $ 3,000.00
Number of Units 1
Manufacturer Olympus
Model SZ1145 CHI
Binocular Angle 45°
Eyepieces

Model GSWH20X/12.5
Magnification 20 X
Field Number 12 mm
Focusing YES
Magnification 36 X - 220 X
Range
Zoom Range 1.8 X - 11.0 X
Illumination Type Coaxial
Stand Type Incident Light (Type A)
102
$3000

• Shipment Cost
not included
Cost Model • Most
Equipment are
US $
350,750
used
• HR cost: US $ 14,000 / year
• Minimum Equipment cost: US $ 336,750

103

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