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9. 201122096
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10. 201122096
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11. 201122096
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12. 201122096
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13. 201122096
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14. 201122096
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15. 201122096
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16. 201122096
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- 18 -

17. 201122096
J7JGfB jiJjQ~~/j££~ fjtff!jiJj Wt(051) %
I-f~ZJJt=g~~~
DEQUEST 2010 Thennphos 580 13.0%
CAS#2809-21-4
r~~z:.~ (70%) Glycolic Acid Dupont 60 1.3%
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CAS#2809-21-4
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CAS#3710-84-7
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- 19 -

18. 201122096
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19. 201122096 862638
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(;zfs:$~*:Ji~rt ' 11Im ' ~o/J{£~~ , *§~B7:1'~*~)
* tJl 1t$~ : 099132618 C- [/ /) "1-1b (2006.01)
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Composition and method for cleaning semiconductor substrates
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- 1-

20. 201122096
The compositions and methods herein relate to the method for the removal of residues
and contaminants from metal or dielectric surfaces. Particularly, a composition and method of
cleaning residues after chemical mechanical polishing of a copper or aluminum surface of the
semiconductor substrates. A method of cleaning semiconductor substrates comprising contacting
the substrates with a solution of water, and sufficient amount of alkyl diphosphonic acid
comprising alkyl diphosphonic acid selected from the group of 1 hydroxyethane 1,1
diphosphonic acid, methylene diphosphonic acid, hydroxymethylene diphosphonic acid,
dichloromethylene diphosphonic acid, hydroxycyclohexylmethylene diphosphonic acid, 1-
hydroxy-3-aminopropane 1,1 diphosphonic acid, l-hydroxy-4-aminobutane 1,1 diphosphonic
acid mixed with dodecylbenzenesulfonic acid, xylenesulfonic acid, toluenesulfonic acid,
phosphonoformic acid, sulfamic acid, 2-amino ethane sulfonic acid, or fluoroboric acid or an
organic carboxylic acid and pH is adjusted to from greater than 6 to about 10 with a metal ion
free base, and a surfactant.
-2-

21. 201122096
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- 23-

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- 25-

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27. 201122096
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