Original PNP Transistor 2SA684L 2SA684 TO-92 New UNISONIC

1. UNISONIC TECHNOLOGIES CO., LTD
2SA684 PNP SILICON TRANSISTOR
www.unisonic.com.tw 1 of 5
Copyright © 2017 Unisonic Technologies Co., Ltd QW-R211-006.E
PNP SILICON TRANSISTOR
 DESCRIPTION
The UTC 2SA684 is power amplifier and driver.
 FEATURES
* Automatic insertion by radial taping possible
* Complementary pair with 2SC1384
 ORDERING INFORMATION
Ordering Number Pin Assignment
Lead Free Halogen Free
Package
1 2 3
Packing
2SA684L-x-AB3-R 2SA684G-x-AB3-R SOT-89 B C E Tape Reel
2SA684L-x-AE3-R 2SA684G-x-AE3-R SOT-23 B E C Tape Reel
2SA684L-x-T9N-B 2SA684G-x-T9N-B TO-92NL E C B Tape Box
2SA684L-x-T9N-K 2SA684G-x-T9N-K TO-92NL E C B Bulk
Note: Pin Assignment: B: Base C: Collector E: Emitter
 MARKING
SOT-23 SOT-89 TO-92NL
UTC
2SA684
Date Code
L: Lead Free
G: Halogen Free

2. 2SA684 PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD 2 of 5
www.unisonic.com.tw QW-R211-006.E
 ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise noted)
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage VCBO -60 V
Collector-Emitter Voltage VCEO -50 V
Emitter-Base Voltage VEBO -5 V
Peak Collector Current ICP -1.5 A
Collector Current (DC) IC -1 A
SOT-89 500 mW
SOT-23 350 mWCollector Dissipation
TO-92NL
PC
1000 mW
Junction Temperature TJ +150 °C
Storage Temperature TSTG -55 ~ +150 °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Base Breakdown Voltage BVCBO IC=-10A, IE=0 -60 V
Collector-Emitter Breakdown Voltage BVCEO IC=-2mA, IB=0 -50 V
Emitter-Base Breakdown Voltage BVEBO IE=-10μA, IC =0 -5 V
Collector Cut-Off Current ICBO VCB=-20V, IE=0 -0.1 μA
hFE1 VCE=-10V, IC=-500mA 85 340
DC Current Gain
hFE2 VCE=-5V, IC=-1A 50
Collector-Emitter Saturation Voltage VCE(SAT) IC=-0.5A, IB=-50mA -0.2 -0.4 V
Base-Emitter Saturation Voltage VBE(SAT) IC=-0.5A, IB=-50mA -0.85 -1.2 V
Current Gain Bandwidth Product fT VCE=-10V, IB=50mA, f=200MHz 200 MHz
Output Capacitance Cob VCB=-10V, IE=0, f=1MHz 20 30 pF
 CLASSIFICATION OF hFE
RANK Q R S
RANGE 85-170 120-240 170-340

3. 2SA684 PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD 3 of 5
www.unisonic.com.tw QW-R211-006.E
 TYPICAL CHARACTERISTICS
BasetoEmitterSaturationVoltage,
VBE(SAT)(V)
ForwardCurrentTransferRatio,hFE

4. 2SA684 PNP SILICON TRANSISTOR
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www.unisonic.com.tw QW-R211-006.E
 TYPICAL CHARACTERISTICS(Cont.)
Collector to Emitter Voltage vs.
Base to Emitter Resistance
100
Base to Emitter Resistance, RBE (KΩ)
0
-40
-60
-80
-100
-120
-20
0.1 0.3 1 3 10 30
IC=-10mA
TA=25°C
VCE=-10V
0 20 40 60 80 100 120 140 160
Ambient Temperature, TA (°C)
1
10
102
103
104
Collector to Emitter Current vs.
Ambient Temperature
Area Of Safe Operation (ASO)
-100
Collector To Emitter Voltage, VCE (V)
-0.001
-0.01
-0.1
-1
-3
-10
-0.003
-0.1 -0.3 -1 -3 -10 -30
-0.03
-0.3
Single Pulse
TA=25°C
ICP
t=1s
t=10ms

5. 2SA684 PNP SILICON TRANSISTOR
UNISONICTECHNOLOGIESCO.,LTD 5 of 5
www.unisonic.com.tw QW-R211-006.E
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all UTC products described or contained herein.
UTC products are not designed for use in life support appliances, devices or systems where malfunction
of these products can be reasonably expected to result in personal injury. Reproduction in whole or in
part is prohibited without the prior written consent of the copyright owner. UTC reserves the right to
make changes to information published in this document, including without limitation specifications and
product descriptions, at any time and without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.