SlideShare une entreprise Scribd logo
1  sur  1
Télécharger pour lire hors ligne
Reduction of Graphene Oxide for Application in Thin-Film
Supercapacitors
Davis Hu1, Ilia Ivanov2*, Mussie Alemseghed2, Michael Hu2
1Maryville College, Maryville, TN 37804 · 2Oak Ridge National Laboratory · *Mentor
ABSTRACT
ACKNOWLEDGMENTS
This work was supported by the Department of Energy Oak
Ridge National Laboratory and Oak Ridge Institute for
Science and Education under the Summer Undergraduate
Laboratory Internship program. I would like to thank my
mentor Ilia Ivanov for his mentorship. I would also like to
thank Mussie Alemseghed for providing GO synthesis.
Lastly, I would like to thank Michael Hu for his eye directing
vision for making this project possible.
BACKGROUND
RESEARCH QUESTION EXPERIMENTAL RESULTS AND DATA
MATERIALS/METHODS
• The goal of this project is to develop laser-based
reduction of GO for the design of advanced solid
state capacitors and flexible electronic circuits.
The reduction of GO was done using three lasers
(532, 633 and 785 nm) focused confocally
through a 20x, 50x and 100 x objectives on the
sample of GO deposited on the surface of a
glass slide.
EXPERIMENTAL RESULTS AND DATA
• Graphene Oxide (GO), an oxidized form of
graphene, is a single or multi-layered molecular
sheet synthesized from graphite crystals, have
recently been used in conductive transparent films
and other energy-related applications.
• The production of reduced rGO can be
accomplished by microwave, photo and laser
heating methods.
What is the optimized
conditions for the reduction of
Graphene Oxide using laser?
WHAT IS GO?
Figure 1. Molecular structure of graphene.
Reference: Openstax CNX www.cnx.org
Figure 2. Reduction process of graphite to GO to rGO.
Reference: The University of Turku www.utu.fi
MANAGING SUPPORT
Figure 3. Dispersed GO in alcohol can be printed on
flexible substrates and reduced to generate conductive
and dielectric circuits of the next generation.
• Glass slides were cleaned with alcohol prior to GO
deposition.
• X-Y-Z computer controlled sono-spray deposition
(SonoTek Exactacoat Ultrasonic Coating System) was
used to create 1, 2, 5, 10, 15, and 20 GO layers on the
glass slides
• Raman spectrum of GO is measured as a function of
irradiation time.
• A writable LightScribe supported Verbatim CD-R 52x
was obtained from mentor.
• GO was deposited using sono-spray increasing
number of layers from left to right. Square electrodes
were burned five times to achieve rGO.
• Conductivity is measured using four-point probe.
• Gold/Chrome electrodes were deposited onto quartz
slides containing GO.
• Wires were attached to the gold/chrome electrodes
using silver paste.
• GO is reduced to rGO using laser focused between
electrodes.
• The impedance of GO were measured as a function of
irradiation time.
UV-Visible Spectroscopy
•Technique to measure absorption or reflectance in the visible
range.
•Molecules undergo electronic transitions in the regions.
•π or non-bonding electrons absorb energy in the form of UV or
visible light to excite the electrons to higher anti-bonding
molecular orbitals.
Figure 4. A series of glass slides with 1, 2, 5,10,15 and 20
GO layers
Figure 5. Square rGO electrodes on CD
Raman Spectroscopy
•Raman spectroscopy is the common method to characterize
rate of reduction of graphene by determining information such
as disorder, edge and grain boundaries, thickness, doping,
strain and thermal conductivity under varying physical
conditions.
•The various conditions are: exposure time (1, 2, 3, 5, 10, 15,
20, 30, 60 min), laser wavelength (532, 633, 785 nm), objective
lens (20x, 50x, 100x), and power (1%, 10%, 100%)
•In graphene, the Stokes phonon energy shift caused by laser
excitation creates two main peaks in Raman spectrum: G (1580
cm-1), a primary in-plane vibrational mode, and 2D (2690 cm-1),
a second-order overtone of a different in-plane vibration, D
(1350 cm-1)
•The reduction of GO can be determined by plotting the ID/IG
Intensity Ratio vs. Time signifying an initial high peak of ratio
intensity followed by decrease in reduction.
Capacitance Using Cyclic Voltammetry
•Used a three electrode setup consisting of working, reference and
counter which are glassy carbon, Ag/AgCl, and Platinum
respectively.
Electrochemical Impedance Spectroscopy
•Dielectric properties of materials can be measured using
EIS. The measured frequency dependent impedance
response can be modeled using equivalent circuit model and
the capacitance element can be obtained.
CONCLUSIONS
Figure 6. Test structure for measuring kinetics of
GOrGO using impedance and Raman spectroscopy
• GO can be reduced to produce rGO with 532,
633, 785 nm lasers. The best laser for reduction
is at 633 nm.
• Raman D and G peaks are prominent at 532
(green) and 633 nm (red) but not for 785 nm
(purple) which explains that the Raman intensity
depends on the laser wavelength color.
• The maximum capacitance of GO was found to
be 2.70x10-3 F/g at 0.4 volts and 1.74 F/g at 0.7
volts in acetonitrile and NaOH respectively. The
value of the capacitance was calculated at a
range from 0.2 to 0.5 volts/sec and 0.25 to 1.00
volts/sec for acetonitrile and NaOH respectively.
• EIS and equivalent circuit modeling gave the
capacitance value of 7.88240-11 F.
GO in Alcohol Solution  Flexible Electronics
GO
rGO
Reference: ScienceRay www.scienceray.com

Contenu connexe

Tendances

Graphene Project Report
Graphene Project ReportGraphene Project Report
Graphene Project Reportvishal anand
 
Graphene, a matter for future technology
Graphene, a matter for future technologyGraphene, a matter for future technology
Graphene, a matter for future technologySakti Prasanna Muduli
 
Doping of graphene and its application in photo electrochemical water splitting
Doping of graphene and its application in photo electrochemical water splittingDoping of graphene and its application in photo electrochemical water splitting
Doping of graphene and its application in photo electrochemical water splittingDr. Basudev Baral
 
Graphene Field Effect Transistor
Graphene Field Effect TransistorGraphene Field Effect Transistor
Graphene Field Effect TransistorAhmed AlAskalany
 
Introduction to graphene based computing
Introduction to graphene based computingIntroduction to graphene based computing
Introduction to graphene based computingSameer Bansod
 
Electron transfer between methyl viologen radicals and graphene oxide
Electron transfer between methyl viologen radicals and graphene oxideElectron transfer between methyl viologen radicals and graphene oxide
Electron transfer between methyl viologen radicals and graphene oxidekamatlab
 
Graphene : the futuristic element.....
Graphene : the futuristic element..... Graphene : the futuristic element.....
Graphene : the futuristic element..... MD NAZRE IMAM
 
Graphene by ISMAIL ALSARHI
Graphene by ISMAIL ALSARHIGraphene by ISMAIL ALSARHI
Graphene by ISMAIL ALSARHIISMAILH6
 
Graphene : Properties and uses
Graphene : Properties and usesGraphene : Properties and uses
Graphene : Properties and usesUj17
 
Graphene: its increasing economic feasibility
Graphene: its increasing economic feasibility Graphene: its increasing economic feasibility
Graphene: its increasing economic feasibility Jeffrey Funk
 
Graphene Transistor By Shital Badaik
Graphene Transistor By Shital BadaikGraphene Transistor By Shital Badaik
Graphene Transistor By Shital BadaikShital Badaik
 
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATION
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATIONGRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATION
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATIONAman Gupta
 
Research issues in graphene field effect transistor
Research issues in graphene field effect transistorResearch issues in graphene field effect transistor
Research issues in graphene field effect transistorDaljeet Motton
 

Tendances (20)

Graphene Project Report
Graphene Project ReportGraphene Project Report
Graphene Project Report
 
Graphene
GrapheneGraphene
Graphene
 
Graphene
GrapheneGraphene
Graphene
 
Graphene, a matter for future technology
Graphene, a matter for future technologyGraphene, a matter for future technology
Graphene, a matter for future technology
 
Doping of graphene and its application in photo electrochemical water splitting
Doping of graphene and its application in photo electrochemical water splittingDoping of graphene and its application in photo electrochemical water splitting
Doping of graphene and its application in photo electrochemical water splitting
 
Graphene Field Effect Transistor
Graphene Field Effect TransistorGraphene Field Effect Transistor
Graphene Field Effect Transistor
 
Seminar graphene ppt
Seminar  graphene pptSeminar  graphene ppt
Seminar graphene ppt
 
Synthesis of graphene
Synthesis of grapheneSynthesis of graphene
Synthesis of graphene
 
Introduction to graphene based computing
Introduction to graphene based computingIntroduction to graphene based computing
Introduction to graphene based computing
 
Electron transfer between methyl viologen radicals and graphene oxide
Electron transfer between methyl viologen radicals and graphene oxideElectron transfer between methyl viologen radicals and graphene oxide
Electron transfer between methyl viologen radicals and graphene oxide
 
Graphene : the futuristic element.....
Graphene : the futuristic element..... Graphene : the futuristic element.....
Graphene : the futuristic element.....
 
Graphene by ISMAIL ALSARHI
Graphene by ISMAIL ALSARHIGraphene by ISMAIL ALSARHI
Graphene by ISMAIL ALSARHI
 
Graphene : Properties and uses
Graphene : Properties and usesGraphene : Properties and uses
Graphene : Properties and uses
 
Graphene ppt
Graphene pptGraphene ppt
Graphene ppt
 
Graphene: its increasing economic feasibility
Graphene: its increasing economic feasibility Graphene: its increasing economic feasibility
Graphene: its increasing economic feasibility
 
Graphene Transistor By Shital Badaik
Graphene Transistor By Shital BadaikGraphene Transistor By Shital Badaik
Graphene Transistor By Shital Badaik
 
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATION
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATIONGRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATION
GRAPHENE SYNTHESIS AND ITS APPLICATIONS TERM PAPER PRESENTATION
 
Graphene
GrapheneGraphene
Graphene
 
Research issues in graphene field effect transistor
Research issues in graphene field effect transistorResearch issues in graphene field effect transistor
Research issues in graphene field effect transistor
 
Graphene
GrapheneGraphene
Graphene
 

Similaire à Research Poster Hu, Davis SULI Summer 2014

Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...
Electrochemically reduced graphene oxide (ergo) as humidity sensor   effect o...Electrochemically reduced graphene oxide (ergo) as humidity sensor   effect o...
Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...Journal Papers
 
APS march meeting 2012
APS march meeting 2012APS march meeting 2012
APS march meeting 2012Po-Chun Yeh
 
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESSimulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
 
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESSimulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESijrap
 
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...Raj Kumar, PhD
 
Simulation Of Algan/Si And Inn/Si Electric - Devices
Simulation Of Algan/Si And Inn/Si Electric - DevicesSimulation Of Algan/Si And Inn/Si Electric - Devices
Simulation Of Algan/Si And Inn/Si Electric - Devicesijrap
 
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_final
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_finalPhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_final
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_finalRadu Andrei Negrila
 
Pulse laser depostion of thin film
Pulse laser depostion of thin filmPulse laser depostion of thin film
Pulse laser depostion of thin filmAbdalla Darwish
 
US Army research lab 2010
US Army research lab 2010US Army research lab 2010
US Army research lab 2010Dmitry Tseitlin
 
Surface and volume energy loss , optical conductivity of rhodamine 6 g dye (...
Surface and volume energy loss , optical conductivity  of rhodamine 6 g dye (...Surface and volume energy loss , optical conductivity  of rhodamine 6 g dye (...
Surface and volume energy loss , optical conductivity of rhodamine 6 g dye (...Alexander Decker
 
Fiber-Optic_Communication_Systems_Fourth_Edition.pdf
Fiber-Optic_Communication_Systems_Fourth_Edition.pdfFiber-Optic_Communication_Systems_Fourth_Edition.pdf
Fiber-Optic_Communication_Systems_Fourth_Edition.pdfMonirMorshed3
 
D030101017022
D030101017022D030101017022
D030101017022theijes
 
Otdrpresentation 171203144201
Otdrpresentation 171203144201Otdrpresentation 171203144201
Otdrpresentation 171203144201ShahabKhalid6
 
Sputtering ( Microelectronics & IC Technology )
Sputtering ( Microelectronics & IC Technology )Sputtering ( Microelectronics & IC Technology )
Sputtering ( Microelectronics & IC Technology )LalrinfeliRalte2
 

Similaire à Research Poster Hu, Davis SULI Summer 2014 (20)

Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...
Electrochemically reduced graphene oxide (ergo) as humidity sensor   effect o...Electrochemically reduced graphene oxide (ergo) as humidity sensor   effect o...
Electrochemically reduced graphene oxide (ergo) as humidity sensor effect o...
 
APS march meeting 2012
APS march meeting 2012APS march meeting 2012
APS march meeting 2012
 
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESSimulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
 
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICESSimulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
Simulation of AlGaN/Si and InN/Si ELECTRIC –DEVICES
 
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...
Thin Film and Nanowires of Transparent Conducting Oxides for Chemical Gas Sen...
 
Rahman-INFN-LNL
Rahman-INFN-LNLRahman-INFN-LNL
Rahman-INFN-LNL
 
Simulation Of Algan/Si And Inn/Si Electric - Devices
Simulation Of Algan/Si And Inn/Si Electric - DevicesSimulation Of Algan/Si And Inn/Si Electric - Devices
Simulation Of Algan/Si And Inn/Si Electric - Devices
 
Radioactivity
RadioactivityRadioactivity
Radioactivity
 
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_final
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_finalPhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_final
PhD_Thesis_Radu_Andrei_Negrila_EMF_stirring_final
 
Growth & characterization of Langasite crystals for SAW device applications
Growth & characterization of Langasite crystals for SAW device  applicationsGrowth & characterization of Langasite crystals for SAW device  applications
Growth & characterization of Langasite crystals for SAW device applications
 
Pulse laser depostion of thin film
Pulse laser depostion of thin filmPulse laser depostion of thin film
Pulse laser depostion of thin film
 
Scientific & Technological Perspective: Future of Energy Storage With Graphen...
Scientific & Technological Perspective: Future of Energy Storage With Graphen...Scientific & Technological Perspective: Future of Energy Storage With Graphen...
Scientific & Technological Perspective: Future of Energy Storage With Graphen...
 
US Army research lab 2010
US Army research lab 2010US Army research lab 2010
US Army research lab 2010
 
Surface and volume energy loss , optical conductivity of rhodamine 6 g dye (...
Surface and volume energy loss , optical conductivity  of rhodamine 6 g dye (...Surface and volume energy loss , optical conductivity  of rhodamine 6 g dye (...
Surface and volume energy loss , optical conductivity of rhodamine 6 g dye (...
 
Weinstock - Quantum Electronic Solids - Spring Review 2013
Weinstock - Quantum Electronic Solids - Spring Review 2013Weinstock - Quantum Electronic Solids - Spring Review 2013
Weinstock - Quantum Electronic Solids - Spring Review 2013
 
Fiber-Optic_Communication_Systems_Fourth_Edition.pdf
Fiber-Optic_Communication_Systems_Fourth_Edition.pdfFiber-Optic_Communication_Systems_Fourth_Edition.pdf
Fiber-Optic_Communication_Systems_Fourth_Edition.pdf
 
7-jolt.PDF
7-jolt.PDF7-jolt.PDF
7-jolt.PDF
 
D030101017022
D030101017022D030101017022
D030101017022
 
Otdrpresentation 171203144201
Otdrpresentation 171203144201Otdrpresentation 171203144201
Otdrpresentation 171203144201
 
Sputtering ( Microelectronics & IC Technology )
Sputtering ( Microelectronics & IC Technology )Sputtering ( Microelectronics & IC Technology )
Sputtering ( Microelectronics & IC Technology )
 

Research Poster Hu, Davis SULI Summer 2014

  • 1. Reduction of Graphene Oxide for Application in Thin-Film Supercapacitors Davis Hu1, Ilia Ivanov2*, Mussie Alemseghed2, Michael Hu2 1Maryville College, Maryville, TN 37804 · 2Oak Ridge National Laboratory · *Mentor ABSTRACT ACKNOWLEDGMENTS This work was supported by the Department of Energy Oak Ridge National Laboratory and Oak Ridge Institute for Science and Education under the Summer Undergraduate Laboratory Internship program. I would like to thank my mentor Ilia Ivanov for his mentorship. I would also like to thank Mussie Alemseghed for providing GO synthesis. Lastly, I would like to thank Michael Hu for his eye directing vision for making this project possible. BACKGROUND RESEARCH QUESTION EXPERIMENTAL RESULTS AND DATA MATERIALS/METHODS • The goal of this project is to develop laser-based reduction of GO for the design of advanced solid state capacitors and flexible electronic circuits. The reduction of GO was done using three lasers (532, 633 and 785 nm) focused confocally through a 20x, 50x and 100 x objectives on the sample of GO deposited on the surface of a glass slide. EXPERIMENTAL RESULTS AND DATA • Graphene Oxide (GO), an oxidized form of graphene, is a single or multi-layered molecular sheet synthesized from graphite crystals, have recently been used in conductive transparent films and other energy-related applications. • The production of reduced rGO can be accomplished by microwave, photo and laser heating methods. What is the optimized conditions for the reduction of Graphene Oxide using laser? WHAT IS GO? Figure 1. Molecular structure of graphene. Reference: Openstax CNX www.cnx.org Figure 2. Reduction process of graphite to GO to rGO. Reference: The University of Turku www.utu.fi MANAGING SUPPORT Figure 3. Dispersed GO in alcohol can be printed on flexible substrates and reduced to generate conductive and dielectric circuits of the next generation. • Glass slides were cleaned with alcohol prior to GO deposition. • X-Y-Z computer controlled sono-spray deposition (SonoTek Exactacoat Ultrasonic Coating System) was used to create 1, 2, 5, 10, 15, and 20 GO layers on the glass slides • Raman spectrum of GO is measured as a function of irradiation time. • A writable LightScribe supported Verbatim CD-R 52x was obtained from mentor. • GO was deposited using sono-spray increasing number of layers from left to right. Square electrodes were burned five times to achieve rGO. • Conductivity is measured using four-point probe. • Gold/Chrome electrodes were deposited onto quartz slides containing GO. • Wires were attached to the gold/chrome electrodes using silver paste. • GO is reduced to rGO using laser focused between electrodes. • The impedance of GO were measured as a function of irradiation time. UV-Visible Spectroscopy •Technique to measure absorption or reflectance in the visible range. •Molecules undergo electronic transitions in the regions. •π or non-bonding electrons absorb energy in the form of UV or visible light to excite the electrons to higher anti-bonding molecular orbitals. Figure 4. A series of glass slides with 1, 2, 5,10,15 and 20 GO layers Figure 5. Square rGO electrodes on CD Raman Spectroscopy •Raman spectroscopy is the common method to characterize rate of reduction of graphene by determining information such as disorder, edge and grain boundaries, thickness, doping, strain and thermal conductivity under varying physical conditions. •The various conditions are: exposure time (1, 2, 3, 5, 10, 15, 20, 30, 60 min), laser wavelength (532, 633, 785 nm), objective lens (20x, 50x, 100x), and power (1%, 10%, 100%) •In graphene, the Stokes phonon energy shift caused by laser excitation creates two main peaks in Raman spectrum: G (1580 cm-1), a primary in-plane vibrational mode, and 2D (2690 cm-1), a second-order overtone of a different in-plane vibration, D (1350 cm-1) •The reduction of GO can be determined by plotting the ID/IG Intensity Ratio vs. Time signifying an initial high peak of ratio intensity followed by decrease in reduction. Capacitance Using Cyclic Voltammetry •Used a three electrode setup consisting of working, reference and counter which are glassy carbon, Ag/AgCl, and Platinum respectively. Electrochemical Impedance Spectroscopy •Dielectric properties of materials can be measured using EIS. The measured frequency dependent impedance response can be modeled using equivalent circuit model and the capacitance element can be obtained. CONCLUSIONS Figure 6. Test structure for measuring kinetics of GOrGO using impedance and Raman spectroscopy • GO can be reduced to produce rGO with 532, 633, 785 nm lasers. The best laser for reduction is at 633 nm. • Raman D and G peaks are prominent at 532 (green) and 633 nm (red) but not for 785 nm (purple) which explains that the Raman intensity depends on the laser wavelength color. • The maximum capacitance of GO was found to be 2.70x10-3 F/g at 0.4 volts and 1.74 F/g at 0.7 volts in acetonitrile and NaOH respectively. The value of the capacitance was calculated at a range from 0.2 to 0.5 volts/sec and 0.25 to 1.00 volts/sec for acetonitrile and NaOH respectively. • EIS and equivalent circuit modeling gave the capacitance value of 7.88240-11 F. GO in Alcohol Solution  Flexible Electronics GO rGO Reference: ScienceRay www.scienceray.com