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New Memory Solutions for Enterprise Computing
1.
©2012 Micron Technology,
Inc. All rights reserved. Products are warranted only to meet Micron’s production data sheet specifications. Information, products, and/or specifications are subject to change without notice. All information is provided on an “AS IS” basis without warranties of any kind. Dates are estimates only. Drawings are not to scale. Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. 1©2012 Micron Technology, Inc. |June 15, 2013 New Memory Solutions for Enterprise Computing June 2013
2.
2©2012 Micron Technology,
Inc. | 0 5,000 10,000 15,000 20,000 25,000 2012 2013 2014 2015 2016 0 3,000 6,000 9,000 2012 2013 2014 2015 2016 0 5,000 10,000 15,000 20,000 25,000 30,000 2012 2013 2014 2015 2016 WW DRAM Growth Forecast Source: Finance Strategy Supply/Demand Model D1 PC TAM CAGR: 14% 1GbEq(M)1GbEq(M) Server & Storage TAM Graphics and Consumer TAM 1GbEq(M) CAGR: 26% June 15, 2013 2013 WW DRAM TAM PC = DT, NB, Ultrathin, Tablet, Netbook, and Upgrade Modules Networking TAM 1GbEq(M) Total TAM CAGR ‘12-’16 29% CAGR: 47% 1GbEq(M) 0 5,000 10,000 15,000 20,000 2012 2013 2014 2015 2016 CAGR: 48% 0 500 1,000 1,500 2,000 2012 2013 2014 2015 2016 CAGR: 29% Mobile TAM Server & Storage 15% Networking 2% PC 49% Graphics & Consumer 11% Mobile 21% Other 2%
3.
3©2012 Micron Technology,
Inc. | 0 5,000 10,000 15,000 20,000 25,000 CQ1'13 CQ2'13 CQ3'13 CQ4'13 CQ1'14 CQ2'14 CQ3'14 CQ4'14 CQ1'15 CQ2'15 CQ3'15 CQ4'15 CQ1'16 CQ2'16 CQ3'16 CQ4'16 June 15, 2013 Server & Storage DRAM Module Density Modules(000s) 64GB Source: Micron Business Development – 2Q’13 18661600 2133 DDR3 speeds DDR4 speeds 8GB 2GB, 4GB 16GB 32GB 2400
4.
4©2012 Micron Technology,
Inc. | Driving Solutions for Enterprise Computing June 15, 2013 Key Implications Micron offers Memory Architectures for Enterprise Computing Market Trends NVDIMM Persistent Memory Applications Mission Critical Micro-Server DIMMs SORDIMM, ECC SODIMM, Mini- VLP UDIMM OEM DDR4 Next Generation Mainstream DRAM • Demand side fragmentation : Enterprise segment continues to rapidly sub-segment into commoditized cloud space and traditional OEM space • Supply side consolidation : Scalable vendor base continues to reduce in size for key customers opening up collaborative landscape for technology developers • Disruptive growth : Focus on BI & Analytics driving SDDC/SDN architecture targeting hardware commoditization • Cloud segment : Public Cloud drives scale-out business and enables microserver growth over time • Non-Cloud segment : Traditional enterprise applications drive scale-up business, in-memory computing technologies and platform differentiation • Divergent Requirements : Notable differences in memory requirements for performance, capacity, and speed developing across cloud and non-cloud segments
5.
5©2012 Micron Technology,
Inc. | Small Form Factor DIMMs for Micro-Servers Small Footprint, High Capacity June 15, 2013 ECC SODIMM/ SORDIMM/VLP RDIMM Micro-Server DRAM Market Outlook • ECC SODIMM: o 4/8GB density o SDP components, JEDEC standard definition • SORDIMM: o 16GB density o DDP components, JEDEC standard definition • VLP RDIMM: o 4/8/16GB density, SDP and DDP components 0% 10% 20% 30% 40% 50% 0 250 500 750 1000 CQ1'12 CQ2'12 CQ3'12 CQ4'12 CQ1'13 CQ2'13 CQ3'13 CQ4'13 CQ1'14 CQ2'14 CQ3'14 CQ4'14 CQ1'15 CQ2'15 CQ3'15 CQ4'15 CQ1'16 CQ2'16 CQ3'16 CQ4'16 M Gb EQ for uServer uServer % of Server DRAM Current Trends • Gaining Traction in data center buildouts • Marked growth of customers planning or introducing micro-server products • Low density modules solidifying around ECC SODIMM and high density around SORDIMM and VLP RDIMM • DDR3 transition to DDR4 expected when cost premium is near zero
6.
6©2012 Micron Technology,
Inc. |June 15, 2013 Why DDR4? Packing power and performance into a new generation of DRAM Up to 50% bandwidth increase over DDR3 Data rates reaching 2400 Mb/s today and will go up to 3200 Mb/s in future Faster burst accesses Speed Voltage reduction to 1.2V 20% reduction in power compared with DDR3 DLL-off mode for system frequency scaling TCR for optimizing refresh power consumption with no impact to controller scheduling LPASR mode adjusts self-refresh rate based on device temperature for maximum standby power Power JTAG boundary scan enables early fault detection during system test reduced debug time and saved development & production costs Improved data signal integrity and system reliability Quality Support up to 16Gb die density Multi-rank package support Higher capacity memory subsystem Up to 8-die stacking Density
7.
7©2012 Micron Technology,
Inc. | Non-Volatile DIMM Combination DRAM and NAND for backup and persistent data applications June 15, 2013 Overview Operation & Value Proposition Ultracapacitor Module Self-contained energy source for operation during power failure • Provides data retention in the event of a power fail or system crash and a means to implement basic checkpoint schemes • Looks like an RDIMM to the system during normal operation • Transfers data from DRAM to NAND upon power failure or system crash • Valuable wherever the bottleneck is storage and I/O and where downtime costs moneyNVDIMM Controller Flash management and high speed DMA Onboard DRAM & NAND DRAM performance and non- volatility