Ce diaporama a bien été signalé.
Nous utilisons votre profil LinkedIn et vos données d’activité pour vous proposer des publicités personnalisées et pertinentes. Vous pouvez changer vos préférences de publicités à tout moment.
ASTRAL
•
•
•

Advanced Surface Technology Reseach Group
A material science research group at Lappeenranta University of
Te...
Main research areas
Thin film deposition techniques and
applications, particularly for nanoscale
structures:

Atomic Layer...
ALD – Atomic Layer Deposition

Atomically precise control of material layer
thickness, composition and structure
ALD – Atomic Layer Deposition
Chemical vapor deposition method with sequential self-limiting gassolids reactions
First ato...
Schematic of ALD Reactor
Al2O3 ALD – Model ALD system
Chemisorption of the first precursor onto the substrate
(A) AlOH * + Al(CH3)3

AlOAl(CH3)2* +...
Al2O3 ALD – Model ALD system
Inert gas purge to remove the excess of reaction products and unreacted
precursor
(A) AlOH * ...
Al2O3 ALD – Model ALD system
Introduction of the second precursor
(B) AlCH3 * + H20

Al2OH * + CH4

H2O pulse

O
H

H

C

...
Al2O3 ALD – Model ALD system
Surface reactions to produce desired film material
(B) AlCH3 * + H20

Al2OH * + CH4

H

C
H

...
Al2O3 ALD – Model ALD system
Self limiting growth of the film through surface passivation
(B) AlCH3 * + H20

Al2OH * + CH4...
Al2O3 ALD – Model ALD system
Process cycle repeated to reach required thickness
2 Al(CH3)3 + 3 H20

Al2O3 + 6 CH4

H

H

H...
Batch system cycle
Precursor A

Purge

• Stationary substrate
Purge

Precursor B

• Sequential exposure
• Time sequenced g...
Batch ALD systems
Beneq TFS500
• Batch system
• Includes plasma chamber
(plasma chamber configuration
was an ASTRaL design...
Spatial ALD
separate gas zones

exhaust
purge

B

purge

A

purge

B

purge

A

purge

moving substrate
Spatial ALD

coating head

flexible substrate
Beneq TFS200R
Roll-to-roll ALD systems

500 mm web

Beneq WCS 500
roll-to-roll system
ALD research in Mikkeli
Diffusion barrier layers on flexible substrates
• roll-to-roll ALD research
• water vapour and oxy...
ALD research in Mikkeli
Surface functionalisation
• hydrophilic and hydrophobic surfaces
Polymer layers
• molecular layer ...
Summary
•

Focus on atomic layer deposition

•

Process, materials and applications research

•

Unique facility for roll-...
Contact Details
Project Coordinator
JANNE KEKÄLÄINEN
janne.kekalainen@lut.fi
GSM +358 50 344 9494
http://www.linkedin.com/...
ASTRaL Research Group at Lappeenranta University of Technology
Prochain SlideShare
Chargement dans…5
×

ASTRaL Research Group at Lappeenranta University of Technology

2 352 vues

Publié le

Presentation of thin film ALD research done in ASTRaL laboratory at Lappeenranta University of Technology's campus in Mikkeli, Finland

Publié dans : Technologie
  • Soyez le premier à commenter

  • Soyez le premier à aimer ceci

ASTRaL Research Group at Lappeenranta University of Technology

  1. 1. ASTRAL • • • Advanced Surface Technology Reseach Group A material science research group at Lappeenranta University of Technology Located in Mikkeli, Finland
  2. 2. Main research areas Thin film deposition techniques and applications, particularly for nanoscale structures: Atomic Layer Deposition (ALD) • • • • • Conformality Uniformity Thickness control Hermeticity Ability to form nanolaminates
  3. 3. ALD – Atomic Layer Deposition Atomically precise control of material layer thickness, composition and structure
  4. 4. ALD – Atomic Layer Deposition Chemical vapor deposition method with sequential self-limiting gassolids reactions First atomic layer onto substrate is formed by chemisorption (in ideal case), second layer with chemical reaction Materials are built up one atomic layer at a time (cycle) (In practice, due to the size of the molecules (steric hindrance), less than 1 mono layer may be formed at a time)
  5. 5. Schematic of ALD Reactor
  6. 6. Al2O3 ALD – Model ALD system Chemisorption of the first precursor onto the substrate (A) AlOH * + Al(CH3)3 AlOAl(CH3)2* + CH4 H C H H C H C H Al H O H H C H H Al O Substrate H H C H O C H H H H H H H H O O H H reaction products CH4
  7. 7. Al2O3 ALD – Model ALD system Inert gas purge to remove the excess of reaction products and unreacted precursor (A) AlOH * + Al(CH3)3 AlOAl(CH3)2* + CH4 Purge after TMA pulse H C H H C H Excess TMA H H Al H H H H C C H H C H reaction products CH4 H H H H Passivated surface H C H H H C H Al O H H H C H H H C Al O H H H C H H H C Al H H H O Substrate C H H H C Al O C H H C H H H Al O H H
  8. 8. Al2O3 ALD – Model ALD system Introduction of the second precursor (B) AlCH3 * + H20 Al2OH * + CH4 H2O pulse O H H C H H H C H Al O H H H C H H H H C Al O H H H C H H H C Al H H H O Substrate C H H H C Al O C H H C H H H Al O H H
  9. 9. Al2O3 ALD – Model ALD system Surface reactions to produce desired film material (B) AlCH3 * + H20 Al2OH * + CH4 H C H H H H H C H H C H H reation products CH4 H H Al(CH3)3 + OH H H C H H H C H Al O H H H C H H C Al O H H O H H O C Al Al O O Substrate C H H C H H H Al O H H
  10. 10. Al2O3 ALD – Model ALD system Self limiting growth of the film through surface passivation (B) AlCH3 * + H20 Al2OH * + CH4 Purge after H2O pulse H H H C H H C H H H H H H H C C H H H H C H H H H C H H H H H H H H H O O O O O O O O O Al Al Al Al Al O O O O O Substrate reaction products CH4 One atomic layer of passivated surface
  11. 11. Al2O3 ALD – Model ALD system Process cycle repeated to reach required thickness 2 Al(CH3)3 + 3 H20 Al2O3 + 6 CH4 H H H H H O O O O O Al O O Al O O Al O O Al O O Al O O Al O Al Al Al Al O O O O O O Al O Growth rate for Al2O3 O O Al O O O Al O O O Al O O Al O O Al Al Al Al Al O O O O O Substrate 1Å/Cycle
  12. 12. Batch system cycle Precursor A Purge • Stationary substrate Purge Precursor B • Sequential exposure • Time sequenced gas pulses A Purge B Purge
  13. 13. Batch ALD systems Beneq TFS500 • Batch system • Includes plasma chamber (plasma chamber configuration was an ASTRaL design) ASM F120 Beneq TFS200 (plasma ALD)
  14. 14. Spatial ALD separate gas zones exhaust purge B purge A purge B purge A purge moving substrate
  15. 15. Spatial ALD coating head flexible substrate Beneq TFS200R
  16. 16. Roll-to-roll ALD systems 500 mm web Beneq WCS 500 roll-to-roll system
  17. 17. ALD research in Mikkeli Diffusion barrier layers on flexible substrates • roll-to-roll ALD research • water vapour and oxygen barriers • paper-based packaging • photovoltaic cells and organic light emitting diodes Photocatalytic materials • titanium dioxide, doped, structural investigations of crystal growth and activation • water and air purification Bioactive materials • biocidal coatings • antibacterial surfaces • control of time profile of antibacterial release • zinc oxide and zinc oxide-based nanolaminates
  18. 18. ALD research in Mikkeli Surface functionalisation • hydrophilic and hydrophobic surfaces Polymer layers • molecular layer deposition of PET Sensor materials • tin oxide gas sensors Optoelectronic materials • zinc oxide • copper chloride Process development
  19. 19. Summary • Focus on atomic layer deposition • Process, materials and applications research • Unique facility for roll-to-roll ALD • Open for collaboration www.astral.fi
  20. 20. Contact Details Project Coordinator JANNE KEKÄLÄINEN janne.kekalainen@lut.fi GSM +358 50 344 9494 http://www.linkedin.com/in/jannekekalainen http://twitter.com/JanneKekalainen _____________________________________ LAPPEENRANTA UNIVERSITY OF TECHNOLOGY ASTRaL - Advanced Surface Technology Research Laboratory Sammonkatu 12, FI-50130 Mikkeli, Finland http://www.astral.fi/

×