1. Publications in Refereed Journals
1) P.P. Absil, J.V. Hryniewicz, B.E. Little, R. Wilson, L.G. Joneckis and P.T. Ho,
“Compact Microring Notch Filters”. IEEE Photonics Technology Letters,12, 4, 2000
2) P. P. Absil, J. V. Hryniewicz, B. E. Little, P. S. Cho, R. A. Wilson, L. G. Joneckis,
and P.-T. Ho, “Wavelength conversion in GaAs micro-ring resonators”. Optics
Letters. Vol. 25, No. 8, April 15, 2000
3) J.V. Hryniewicz, P.P. Absil, B.E. Little, R. Wilson, and P.T. Ho,”Higher Order Filter
Response in Coupled Microring Resonators”. IEEE Photonics Technology Letters,12,
3, 2000, Pages 320-322
4) P. P. Absil, J. V. Hryniewicz, B. E. Little, P. S. Cho, R. A. Wilson, L. G. Joneckis,
and P.-T. Ho, “Enhancement of nonlinear effects in GaAs/AlGaAs microring
resonators”, Lasers and Electro-Optics – CLEO 2000, Pages 224-225, 2000
5) M. J. Yang, W. J. Moore, C. H. Yang, R. A. Wilson, B. R. Bennett, and B. V.
Shanabrook, “Determination of temperature dependence of GaSb absorption edge and
its application for transmission thermometry”. Journal of Applied Physics -- May 1,
1999 -- Volume 85, Issue 9, pp. 6632-6635
6) Sambhu Argarwala, Oliver King, Scott Horst, Rick Wilson, Dennis Stone, Mario
Dagenais, and Y.J. Chen. “ Response surface study of inductively coupled plasma
etching of GaAs/AlGaAs in BCl3/Cl2. J. Vac. Sci. Technol. A 17, 52 (1999)
7) Fu-Cheng Wang, W.E. Zhang, C.H. Yang, M.J. Yang, B.R. Bennett, R.A. Wilson,
and D.R. Stone, “A tunneling field-effect transistor with 25 nm metallurgical channel
length”, Applied Physics Letters, 70, (22), 2 June, 1997
8) G.A. Porkolab, Y.J. Chen, S.A. Merritt, Seyed Ahmad Tabatabaei, Sambhu Agarwala,
F.G. Johnson, Oliver King, M. Dagenais, R.A. Wilson, and D.R. Stone, “Wet-
Chemistry Surface Treatment for Dark-Current Reduction that Preserves Lateral
Dimensions of Reactive Ion Etched Ga 0.47 In 0.53 As p-i-n Diode Photodectectors”,
IEEE Photonics Technology Letters, 9, 490-492, 1997.
9) C.R. Lu, S.K. Du, J.R. Anderson, D.R. Stone, and R.A. Wilson, “Photoreflectance
study of GaAs/Al.0.3 Ga 0.7 As resonant asymmetric double quantum wells with Si
delta doping in side barriers”, Applied Surface Science, 92, pp. 543-546, (1996).
10) C.R. Lu, C.L. Chang, C.H. Liou, J.R. Anderson, D.R. Stone, and R.A. Wilson,
“Study of the internal electric fields across the interfaces in the GaAs/(1Al,Ga)As
microstructures”, Applied Surface Science, 92, pp. 404-407, (1996).

2. 11) C. H. Yang and R.A. Wilson, “Observation of femtosecond intersubband energy
relaxation in a thin quantum well: novel hot-electron energy spectroscopy”’
Semiconductor Science and Technology, 9, 740 (1994)
12) C.H. Yang and R.A. Wilson, “Realization of a novel resonant-tunneling hot electron
transistor: competition of ultrafast resonant-tunneling and energy relaxations”, Solid
State Electronics, 37, 805 (1994)
13) Colin E.C. Wood, Richard A. Wilson, Seyed A.Tabatabaei, and Peter Sheldon, “Re-
evaporation and sub-oxide transport in molecular beam epitaxy”. Institute of Physics
Conference Series, No. 136, Chapter 9, pp 541-546. 1994.
14) S.H. Yang, B.J. Thedrez, S.E. Saddow, C.Wood, R. Wilson, and Chi H. Lee, “Cross-
Correlation Measurement of the Turn-On Delay and Pulsewidth of a Q-Switched Two
Section Semiconductor Laser,” IEEE Photonics Technology Letters, 5, 12, 1993.
15) Colin E.C. Wood and Richard A. Wilson, “ Interface contamination by suboxide
transport,” Journal of Vacuum Science and Technology B, 11, (3), 1036-1040. (1993).
16) S.A. Merritt, J. Singh, C.C. Lu, S. Jiang, I. Riant, A. Abdelemonem, R.A. Wilson,
C.E.C. Wood, and M. Dagenais, “Angle Dependence of Facet Reflectivity in
Semiconductor Traveling Wave Amplifiers,” CLEO Digest, 1993.
17) C.C. Lue, J.Singh, S. Jiang, R.A.Wilson, C.E.C. Wood, and M. Dagenais, “Efficient
Gain Quenching in T-Gate Lasers,” CLEO Digest, 1993.
18) B. Thedrez, S.E. Saddow, Y.Q. Liu, C.Wood, R. Wilson, and Chi H. Lee,
“Experimental and Theoretical Investigation of Large Output Power Q-switched
AlGaAs Semiconductor Lasers,” IEEE Photonics Technology Letters, 5, 1, 1993.
19) K.R. Breen, R.A. Wilson, J.A. McClintock, and J.S. Ahearn, “Selective Etching of
AlAs for Preparation of III-V Semiconductor Thin Foils,” Microscopy Research And
Technique, 25, 291 (1993).
20) S. Liu, K.Karrai, F. Dunmore, H.D. Drew, R. Wilson, and G.A. Thomas, “Thermal
activation of carriers from a metallic impurity band,” Physical Review B, 48, 15,
11394 (1993).
21) Colin E.C. Wood and Richard A. Wilson, “Molecular beam epitaxy interface
contamination by suboxide transport,” Journal of Applied Physics, 73, (7), 3543
(1993).
22) J. Chen, C.H. Yang, and R.A. Wilson, “Experimental realization of a new transistor,”
IEEE Transactions on Electron Devices, 40, 267-272, (1993).

3. 23) J. Chen, C.H. Yang, and R.A. Wilson, “A single transistor memory cell: observation
of negative differential resistance in a new quantum transistor,” Applied Physics
Letters, 62, 96, (1993).
24) J.G. Chen, C.H. Yang, and R.A. Wilson, “Modeling of the current-voltage
characteristics of a tunneling transistor,” Applied Physics Letters, 71, 1572, (1992).
25) J.G. Chen, C.H. Yang, and R.A. Wilson, and C.E.C. Wood “DC current-voltage
characteristics of a double quantum well field effect resonant tunneling transistor,”
Applied Physics Letters, 60, (18) 2273-2275, (1992).
26) J. Chen, C.H. Yang, R.A. Wilson, and M.J. Yang “Observation of negative persistent
photoconductivity in an n-channel GaAs/AlGaAs single heterojunction,” Applied
Physics Letters, 60, 2113 (1992).
27) J.G. Chen, C.H. Yang, and R.A. Wilson, “Modeling of a new field-effect resonant
tunneling transistor,” Journal of Applied Physics, 71(3), 1537-1539, (1992)
28) J. Chen, J.G. Chen, C.H. Yang, and R.A. Wilson, “The I-V characteristics of double-
barrier resonant tunneling diodes: Observation and calculation on their temperature
dependence and asymmetry,” Journal of Applied Physics, 70 (6), 3131, (1991)
29) J.G. Chen, J. Chen, R.A. Wilson, W. Johnson, and C.H. Yang, “On the intrinsic
bistability in resonant tunneling structures: Observation of area and temperature
dependence of hysteresis,” Journal of Applied Physics, 70 (4), 2473, (1991)
30) C.R. Lu, J.R. Anderson, D.R. Stone, W.T. Beard, R.A. Wilson, T.F. Kuech, and S.L.
Wright, “Temperature and doping-concentration dependence of the oscillatory
properties of the photoreflectance spectra from GaAs grown by molecular beam
epitaxy,” Physical Review B, 3 (14), 11791, (1991).
31) J.G. Chen, C.H. Yang, and R.A. Wilson, “On the intrinsic bistability in resonant
tunneling structures: Observation of area dependence of hysteresis,” Journal of
Applied Physics, 69 (7), 4132, (1991).
32) J.G. Chen, C.H. Yang, M.J. Yang, and R.A. Wilson, “Observation of two-
dimensional resonant magnetopolarons and phonon-assisted resonant tunneling in
double-barrier heterostructures,” Physical Review B - Rapid Communications, 43,
(5), 4531, (1991).
33) Chen, J; Chen, J.G.; Yang, C.H.; Wilson, R. A.; “The I-V characteristics of double-
barrier resonant tunneling diodes: Observation and calculation on their temperature
dependence and asymmetry,” Journal of Applied Physics, Vol. 70, Issue 6, 3131-
3136, (1991)

4. 34) C. R. Lu, J. R. Anderson, D. R. Stone, W. T. Beard, and R. A. Wilson, (1990),
"Photoreflectance study of the internal electric fields at the n-type GaAs and across
the n-type GaAs/Substrate interface " Supperlattices and Microstructures, 8, 155
35) J.W. Little, J.K. Whisnant, Richard P. Leavitt, and R.A. Wilson, “Extremely low-
intensity optical nonlinearity in asymmetric coupled quantum wells,” Applied Physics
Letters, 51 (22), 1786-1788 (1987).
36) W.A. Beck, R.A. Wilson and A.C. Goldberg, “Determination of Heterojunction
Mobilities Using A Novel Magnetic Field-Dependent Hall Technique,” Journal Of
Crystal Growth, 81, 136 (1987)
37) J.A. McClintock and R.A. Wilson, “Optical Measurement Of Ga Beam Flux For
MBE,” Journal Of Crystal Growth, 81,177 (1987)
38) J.A. McClintock, R.A.Wilson, and N.E.Byer, “UV-Ozone Cleaning of GaAs for
MBE,” Journal of Vacuum Science and Technology, 20 (2), 241 (1982).
Work presented at conferences
1) Z.R. Wasilewski, S.J. Rolfe, and R.A. Wilson, “Contamination in Molecular Beam
Epitaxy: the role of arsenic drag effect”, Ninth International Conference On
Molecular Beam Epitaxy, Pepperdine University, Malibu, California, August 5-9,
1996.
2) Colin E.C. Wood, Richard A. Wilson, Seyed A.Tabatabaei, and Peter Sheldon, “Re-
evaporation and sub-oxide transport in molecular beam epitaxy”. International
Symposium on GaAs and Related Compounds, Freiburg, Germany, 1993.
3) C.H. Yang and R.A. Wilson,”Observation of femtosecond intersubband energy
relaxation in a thin quantum well: novel hot electron energy spectroscopy,” 8th
International Conference on Hot Carrier in Semiconductors, Oxford, England, 1993.
4) C.H. Yang and R.A. Wilson,”Realization of a novel resonant-tunneling hot electron
transistor: competition of femtosecond resonant-tunneling and energy relaxation,” 6th
International Conference on Modulated Semiconductors, Muchen, Germany, 1993.
5) J. Chen, C.H. Yang, and R.A. Wilson,”Dynamics of energy and phase relaxation in
an ultrafast resonant-tunneling transistor,” APS March Meeting, 1993.

5. 6) Colin E.C. Wood and Richard A. Wilson, “ Interface contamination by suboxide
transport,” 12th
North American Conference on Molecular Beam Epitaxy, Ottawa,
Canada 1992.
7) C.H. Yang, J. Chen, and R.A. Wilson, “A single transistor static memory cell: circuit
application of a new quantum transistor,” 1992 International Conference on Solid
State Devices and Materials.
8) J. Chen, C.H. Yang, and R.A. Wilson,”Observation of both negative and positive
persistent photoconductivity in n-channel GaAs/AlGaAs single heterojunctions,”
APS March Meeting, 1992.
9) J.G. Chen, C.H. Yang,R.A. Wilson , and C.E.C. Wood, “ Two-dimension to two-
dimension resonant tunneling in a double quantum well heterojunction structure,”
APS March Meeting, 1992.
10) W.A. Beck, R.A. Wilson and A.C. Goldberg, “Determination of Heterojunction
Mobilities Using A Novel Magnetic Field-Dependent Hall Technique,” 6th
International Conference on Molecular Beam Epitaxy, York, England, September
1986.
11) R.A. Wilson and J.A. McClintock , “Optical Measurement Of Ga Beam Flux For
MBE,” 6th
International Conference on Molecular Beam Epitaxy, York, England,
September 1986.