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Device Modeling Report




COMPONENTS:THYRISTOR
PART NUMBER:MCR22-8
MANUFACTURER: MOTOROLA SEMICONDUCTOR




                 Bee Technologies Inc.


  All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
DIODE MODEL
 Pspice model
                                        Model description
  Parameter
       IS         Saturation Current
       N          Emission Coefficient
      RS          Series Resistance
      IKF         High-injection Knee Current
     CJO          Zero-bias Junction Capacitance
       M          Junction Grading Coefficient
       VJ         Junction Potential
     ISR          Recombination Current Saturation Value
      BV          Reverse Breakdown Voltage(a positive value)
     IBV          Reverse Breakdown Current(a positive value)
       TT         Transit Time




          All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
IG-VT Characteristic

Evaluation Circuit




Simulation result




                                                         Simulation




Comparison Table
                               Measurement           Simulation         % Error
           IGT ( uA)                30                 30.238           0.79333
            VGT (V)              0.8(max)             0.771116         -3.61050

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
ITM-VTM Characteristic

Evaluation Circuit




Simulation result




                                                       Simulation




Comparison Table
          At ITM=1A              Measurement            Simulation             % Error
           VTM(V)                    1.2                  1.1994              -0.05000

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
Holding Characteristic (IH)

Evaluation Circuit




Simulation result




                                                         Simulation




Comparison Table
          VAK=12V              Measurement           Simulation         % Error
           IH(mA)                   2                  2.0249           1.24500

               All Rights Reserved Copyright (c) Bee Technologies Inc. 2004

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SPICE MODEL of MCR22-8 in SPICE PARK

  • 1. Device Modeling Report COMPONENTS:THYRISTOR PART NUMBER:MCR22-8 MANUFACTURER: MOTOROLA SEMICONDUCTOR Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 2. DIODE MODEL Pspice model Model description Parameter IS Saturation Current N Emission Coefficient RS Series Resistance IKF High-injection Knee Current CJO Zero-bias Junction Capacitance M Junction Grading Coefficient VJ Junction Potential ISR Recombination Current Saturation Value BV Reverse Breakdown Voltage(a positive value) IBV Reverse Breakdown Current(a positive value) TT Transit Time All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 3. IG-VT Characteristic Evaluation Circuit Simulation result Simulation Comparison Table Measurement Simulation % Error IGT ( uA) 30 30.238 0.79333 VGT (V) 0.8(max) 0.771116 -3.61050 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 4. ITM-VTM Characteristic Evaluation Circuit Simulation result Simulation Comparison Table At ITM=1A Measurement Simulation % Error VTM(V) 1.2 1.1994 -0.05000 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004
  • 5. Holding Characteristic (IH) Evaluation Circuit Simulation result Simulation Comparison Table VAK=12V Measurement Simulation % Error IH(mA) 2 2.0249 1.24500 All Rights Reserved Copyright (c) Bee Technologies Inc. 2004