SPICE MODEL of TRS24N65D (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: TRS24N65D
MANUFACTURER: TOSHIBA
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
R2
100MEG
U1
TRS24N65D
R1
0.01m
V1
0Vdc
0
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V
I(R1)
0A
1A
2A
3A
4A
5A
6A
7A
8A
9A
10A
11A
12A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.5 0.960 0.948 -1.25 1 0.990 0.988 -0.20 2 1.044 1.050 0.57 5 1.200 1.207 0.58 10 1.450 1.446 -0.28 12 1.540 1.540 0.00

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
10p
100p
1.0n
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
TRS24N65D
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR (V) Cj (pF) %Error Measurement Simulation 0.1 670.00 651.00 -2.84 1 540.00 543.30 0.61 2 460.00 465.80 1.26 5 358.00 340.00 -5.03 10 263.00 250.50 -4.75 20 190.00 180.70 -4.89 50 125.00 121.10 -3.12 100 91.00 94.90 4.29 200 75.30 78.90 4.78 500 68.00 67.30 -1.03

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
7
V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
U1
V1 TRS24N65D
0Vdc
R1
100m
0
R2
1000G
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (nA) VR (V) %Error Measurement Simulation 10 477.00 470.59 -1.34 100 580.00 579.20 -0.14 480 650.00 649.00 -0.15