Curriculum Vitae for Dr. Darwin Enicks

1. 6 8 4 5 S N O W B I R D D R . • C O L O R A D O S P R I N G S , C O 8 0 9 1 8
P H O N E 7 1 9 - 2 7 8 - 9 1 9 6 • M O B I L E 7 1 9 - 5 1 0 - 5 8 2 8 • E - M A I L D A R W I N E N I C K S @ C O M C A S T . N E T
D R . D A R W I N E N I C K S
SUMMARY OF QUALIFICATIONS
A highly motivated, skilled, and innovative Engineering Manager with extensive experience driving
successful continuous improvement programs (CIP) for enhanced device performance and yield, cost
reduction and productivity improvement. Knowledge and expertise spans equipment and process
engineering, yield engineering, and device design. Core competencies include:
 Semiconductor process and device physics, and compound semiconductors
 Innovation; 21 patents and patents pending
 Effective communication
 Team building - leading, motivating, and training
 R&D; from conception to volume manufacturing
PROFESSIONAL EXPERIENCE
2007 - Current University of Colorado Colorado Springs, CO
Lecturer – Semiconductor Physics and Devices (including optical/solar)
2006 - Current ATMEL Corporation Colorado Springs, CO
Process Engineering Section Manager
 In-depth knowledge of MOSFET, HBT, BJT, EPROM, and EEPROM devices and associated
silicon and SOI substrates and processes; ion implant, LPCVD (amorphous/poly silicon and
nitride), oxidation, epitaxy (silicon and silicon germanium), compound semiconductors, dopant
diffusion and anneal
 Direct management of 7 engineers and 12 technicians; indirect management of 40+ engineers,
100+ technicians
 >$10M/year in yield enhancements
 >$1M/year in cost savings
 Extensive FMEA, DOE, Change Control Review Board (CCRB) expertise
 Implemented statistical machine control (SMC); ~50% reduction in equipment faults
 Expertise with equipment and process controls for optimum, high yield manufacturing
 Expertise with Automotive quality standards and qualifications
 Productivity enhancement; 40% reduction in process qualification
 Developed and implemented vacuum and semiconductor physics training programs for ~60
engineers and 120 technicians
 Developed a successful R&D link with Queen’s University of Northern Ireland to develop novel

2. semiconductor substrate technologies; also resulted in a strategic alliance with ATMEL
2001 - 2006 ATMEL Corporation Colorado Springs, CO
Senior Principal Engineer – SiGe LPCVD
 Enhanced ATMEL’s profitability with innovative process, equipment, and device solutions;
achieved ATMEL’s first high yield, production worthy silicon germanium (SiGe) process; steady
production at ~200 wafers/week
 90% reduction in PM recovery time; world best for Applied Materials SiGe epitaxy; results
presented at the 2002 AMAT Epi Symposium in Santa Clara, CA
 Co-developed ATMEL’s first 100 - 150 GHz SiGe heterojunction bipolar transistor (HBT); sub
30 nanometer SiGe deposition
 Co-developed, with AMAT, a world-class temperature calibration program which became a
worldwide product for AMAT; now a free product for ATMEL
 ATMEL’s first SiGe process and device modeling program
 Implemented a SiGe device physics training program for ~60 engineers and managers
2000 - 2001 ATMEL Corporation Colorado Springs, CO
Principal Engineer – High Density Plasma (HDP) CVD
 ATMEL’s first AMAT HDP production worthy processes; from equipment installation to
product qualification
 Led efforts to resolve numerous equipment issues (>3M in savings to ATMEL); ESC and
cathode redesign
 Improved Cpk’s from <1.2 to >2.0
 Drove equipment availability to >85%
 Improved productivity through robot optimization
1998 - 2000 ATMEL Corporation Colorado Springs, CO
Senior Equipment Engineer – Plasma and Wet Etch
 Drove equipment avail/uptime from <75%/80% to > 85%/90%
 Enhanced productivity through improved MTBF and MTTR from characterization of
subcomponent failures and predictive maintenance
 Implemented equipment programs to improve and characterize RF matching, gas injection, and
vacuum integrity
 Joint development of a plasma impedance monitor with Scientific Systems of Ireland (for the
Phase IV and Super E RF match)
 Extensive vacuum characterization
1997 - 1998 ATMEL Corporation Colorado Springs, CO
Central Services Supervisor and Equipment Engineer
 Managed ~12 technicians covering vacuum pumps, reactor component cleaning and rebuild, and
bulk chemical distribution

3.  Conceived and led efforts for >$2M/year in cost savings (gas, DI water, and chemicals)
PATENTS AND PUBLICATIONS
1st
inventor – 4 patents awarded and 17 patents pending related to SiGe, silicon-on-insulator (SOI),
and silicon-germanium-on-insulator (SGOI), and MOSFET, HEMT, and HHMT devices and
processes
21 papers published with refereed journals and conferences of IEEE, ECS, AVS, and Solid State
Technology Magazine
4 invited papers (2002, 2004, 2005, 2007)
METROLOGY KNOWLEDGE & EXPERIENCE
TEM, SEM, AFM, SIMS, EELS, AUGER, ICPMS, FPP, SRP, XRD, EDX
EDUCATION
2007 University of Colorado Colorado Springs, CO
PhD, Electrical Engineering
 Dissertation “Investigation of Carbon Profiles for Enhanced Boron Confinement and
Improved Carrier Transport in Strained Silicon Germanium Nanolayers for Heterojunction
Bipolar Transistors”
 Developed novel carbon doping techniques in boron doped c-SiGe to improve dopant
diffusion, carrier transport, and HBT noise characteristics
2004 University of Colorado Colorado Springs, CO
MS, Electrical Engineering
 Thesis “Oxygen Effects in sub-50nm Silicon Germanium Processing with Emphasis on HBT
Manufacturing and Performance”
1989 University of Oklahoma Norman, OK
BS, Mechanical Engineering
1984 - 85 United States Military Academy WestPoint, NY
Honorable discharge
PROFESSIONAL MEMBERSHIPS
IEEE, ECS, AVS
AWARDS RECEIVED
 2007 Outstanding Graduate Researcher – UCCS
 2006 Mayor of Colorado Springs Annual Award for creating international ties with
Northern Ireland
 2004 Outstanding Graduate Student - UCCS

4. PAPERS AND PUBLICATIONS
INVITED CONFERENCE AND SEMINAR PAPERS
1. “Demonstration of Fast Recovery and Sub-E17 Oxygen Processing for Low Temp LPCVD SiGeC:B
Strained Layers”, Darwin Enicks, Atmel Corp., 2002 AMAT Epitaxial technology strategic
symposium
2. “Elevated Oxygen Concentration in In-situ Born Doped SiGe and SiGeC Sub-50 nm NPN HBTs”,
D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado at Colorado Springs2
, 2004
ICICDT (International Conference of IC Design and Technology), Austin, Tx
3. “Study of Process Induced Oxygen Updiffusion in Pseudomorphic Boron Doped Sub-50 NM SiGeC
layers grown by LPCVD”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado at
Colorado Springs2
, 2005 ICICDT (International Conference of IC Design and Technology), Austin,
Tx
*Note: This is the first discovery worldwide of oxygen updiffusion mechanism in the
strained boron and carbon doped silicon germanium (SiGeC:B) material system.
4. “SiGe Technology for RF Applications”, D. Enicks, ATMEL Corporation, 2007 Solid State
/Electron Devices Chapter of the IEEE Pikes Peak Section
PEER REVIEWED CONFERENCE PRESENTATIONS
5. “Advanced metrology tool for Si1-xGex characterization: Infrared Spectroscopic Ellipsometer
(IRSE)”, Enicks, D.; I-L Teng; Rubino, J.; Sun, L.; Defranoux, C.; Bourtault, S.; Hendrich, P.; Stehle,
J.-L.; 4-6 May 2004 Page(s):425 – 432, Advanced Semiconductor Manufacturing, 2004, ASMC '04;
IEEE Conference and Workshop
6. “Device Performance Considerations of NPN HBTs Due to Elevated Oxygen in Sub-50 nm SiGe
and SiGeC Base Layers Grown by LPCVD”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
,
University of Colorado at Colorado Springs2
, Electrochemical Society Conference 2004, Honolulu,
Hawaii
7. “Temperature Control Studies for LPCVD of Complex In-Situ Doped Sub-50 nm SiGe and SiGeC
Base Films in NPN HBTs”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado
at Colorado Springs2
, Electrochemical Society Conference 2004, Honolulu, Hawaii
8. “Low Temperature LPCVD Epitaxy of In-Situ Boron Doped SiGe and SiGeC Strained Layers with
sub-E17 Oxygen Concentration”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of
Colorado at Colorado Springs2
, Electrochemical Society Conference 2004, Honolulu, Hawaii
9. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped
SiGeC”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 602 1510 (2006)

5. 10. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced
Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald
Oleszek, Meet. Abstr. - Electrochem. Soc. 602 1410 (2006)
11. "SiGe Technology for RF applications", Solid State / Electron Devices Chapter of the IEEE Pikes
Peak Section, D. Enicks, Nov. 2006
12. “A Novel Carbon Confinement Technique for Ultrathin Boron Profiles in Strained Layers of Silicon
Germanium”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado at Colorado
Springs2
, 2005 International Conference of Nanotechnology (Oct. 31 – Nov 4; San Francisco)
13. “A Novel Carbon Confinement Technique for Formation of Nanometer SiGeC HBTs with Low Base
Resistance”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado at Colorado
Springs2
, 2005 International Conference of Nanotechnology (Oct. 31 – Nov 4; San Francisco)
14. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles With Enhanced
Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald
Oleszek, Meet. Abstr. - Electrochem. Soc. 601 356 (2006)
15. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped
SiGeC”, Darwin Enicks and Gerald Oleszek, Meet. Abstr. - Electrochem. Soc. 601 357 (2006)
JOURNAL PUBLICATIONS
16. “Remote Carbon Method SiGeC:B by LPCVD for Sub-40 nm NPN HBT Devices”, D. Enicks, Solid
State Technology, August 2006
17. “Thermal Redistribution of Oxygen and Carbon in Boron-Doped Pseudomorphic SiGeC
Heterojunction Nanometer Base Layers, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc.
153 G529 (2006)
18. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles in Strained Layers of
Silicon Germanium”, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc. 153 G405 (2006)
19. “Process-Induced Oxygen Updiffusion in Pseudomorphic Boron-Doped Sub-50 nm SiGeC Layers
Grown by LPCVD”, Darwin Enicks and Gerald Oleszek, Electrochem. Solid-State Lett. 8 G286
(2005)
20. “Thermal Redistribution of Oxygen and Carbon in Sub-50 NM Strained Layers of Boron Doped
SiGeC”, Darwin Enicks and Gerald Oleszek, ECS Trans. 3, 1087 (2006)
21. “Isolated Carbon Confinement Methodology for Ultrathin Boron Profiles with Enhanced
Conductivity in Sub-50 NM Strained Layers of Silicon Germanium”, Darwin Enicks and Gerald
Oleszek, ECS Trans. 3 (7), 161 (2006)
22. “Vacuum Science Considerations for Rapid Reactor Recovery With Extremely Low Oxygen In Low
Temperature LPCVD of Si1-xGex And Si1-x-yGexCy Films”, D. Enicks1
, G. Oleszek2
, ATMEL
Corporation1
, University of Colorado at Colorado Springs2
, Journal Vac. Sci. Technol. A 24 467
(2006)
23. ”Simultaneous Optical Measurement of Ge Content and Carbon Doping in Strained Epitaxial SiGe
Films”, S. Morris, D. Le Cunff, D. Ristoiu, V. Vachellerie, F. Deleglise, and D. Dutartre J. Vac. Sci.
Technol. B 23, 2249 (2005)

6. 24. “Enhanced Carbon Confinement of Ultranarrow Boron Profiles in SiGeC HBTs”, Enicks, D.,
Oleszek, G., Electron Devices, IEEE Transactions on, Volume 53, Issue 8, Aug. 2006 Page(s):1834
– 1839
25. “Impact of Elevated Oxygen Concentration on In-situ Doped Sub-50 nm SiGe and SiGeC Base
Strained Layer NPN HBT”, Oleszek, G.; Enicks, D., Integrated Circuit Design and Technology,
2004. ICICDT '04. International Conference on, 2004 Page(s):253 - 254
26. “Study of Process Induced Localized Elevated Oxygen Concentration in Strained Boron
Doped Sub-50 nm SiGeC Base Sayers for High Frequency npn HBTs”, Enicks, D., Oleszek,
G., Integrated Circuit Design and Technology, 2005. ICICDT 2005. 2005 International Conference
on 9-11 May 2005 Page(s):195 – 198
27. “Advanced Metrology Tool for Si1-xGex Characterization: Infrared Spectroscopic Ellipsometer
(IRSE)”, Enicks, D., I-L Teng, Rubino, J., Sun, L., Defranoux, C., Bourtault, S., Hendrich, P., Stehle,
J.-L., Advanced Semiconductor Manufacturing, 2004. ASMC '04. IEEE Conference and Workshop
4-6 May 2004 Page(s):425 - 432
SCITATION IN THE VIRTUAL JOURNAL OF NANOSCALE SCIENCE AND
TECHNOLOGY
28. “Thermal Redistribution of Oxygen and Carbon in Boron-Doped Pseudomorphic SiGeC
Heterojunction Nanometer Base Layers”, Darwin Enicks and Gerald Oleszek, J. Electrochem. Soc.
153, G529 (2006)
OTHER
29. Investigation of carbon profiles for enhanced boron confinement and improved carrier transport in
strained silicon germanium nanolayers for heterojunction bipolar transistors / (2007), Enicks, Darwin
Gene., Thesis (Ph. D.)--University of Colorado at Colorado Springs, 2007.
30. Oxygen effects in sub-50 NM silicon germanium processing with emphasis on HBT manufacturing
and performance / (2004), Enicks, Darwin Gene., Thesis (M.S.)--University of Colorado at Colorado
Springs, 2004.
31. “Nanometer SiGeC HBTS With Enhanced Device Properties Using Carbon Confinement Process
Technology”, D. Enicks1
, G. Oleszek2
, ATMEL Corporation1
, University of Colorado at Colorado
Springs2

7. INTELLECTUAL PROPERTY PORTFOLIO
Hyperlink to USPTO
GRANT NO. TITLE
1 7,439,558 METHOD AND SYSTEM FOR CONTROLLED OXYGEN INCORPORATION IN
COMPOUND SEMICONDUCTOR FILMS FOR DEVICE PERFORMANCE
ENHANCEMENT
2 7,300,849 BANDGAP ENGINEERED MONO-CRYSTALLINE SILICON CAP LAYERS FOR
SIGE HBT PERFORMANCE ENHANCEMENT
3 7,080,440 VERY LOW MOISTURE O-RING AND METHOD FOR PREPARING THE SAME
4 7,044,147 SYSTEM, APPARATUS AND METHOD FOR CONTAMINANT REDUCTION IN
SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT COMPONENTS
Patents pending; hyperlink to USPTO
PUB. APP. NO. TITLE
1 20080237716 INTEGRATED CIRCUIT STRUCTURES HAVING A BORON ETCH-STOP
LAYER AND METHODS, DEVICES AND SYSTEMS RELATED THERETO
2 20080142836 METHOD FOR GROWTH OF ALLOY LAYERS WITH COMPOSITIONAL
CURVATURE IN A SEMICONDUCTOR DEVICE
3 20080128750 METHOD AND SYSTEM FOR PROVIDING A METAL OXIDE
SEMICONDUCTOR DEVICE HAVING A DRIFT ENHANCED CHANNEL
4 20080128749 METHOD AND SYSTEM FOR PROVIDING A DRIFT COUPLED DEVICE
5 20080099882 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY
SELECTIVE, AND THERMALLY RESILIENT CARBON ETCH-STOP
6 20080099840 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY
SELECTIVE, AND THERMALLY RESILIENT BORON ETCH-STOP
7 20080099754 METHOD FOR PROVIDING A NANOSCALE, HIGH ELECTRON MOBILITY
TRANSISTOR (HEMT) ON INSULATOR
8 20080050883 HETROJUNCTION BIPOLAR TRANSISTOR (HBT) WITH PERIODIC
MULTILAYER BASE
9 20070262295 A METHOD FOR MANIPULATION OF OXYGEN WITHIN SEMICONDUCTOR
MATERIALS
10 20070148890 OXYGEN ENHANCED METASTABLE SILICON GERMANIUM FILM LAYER
11 20070111428 BANDGAP ENGINEERED MONO-CRYSTALLINE SILICON CAP LAYERS FOR
SIGE HBT PERFORMANCE ENHANCEMENT
12 20070105330 BANDGAP AND RECOMBINATION ENGINEERED EMITTER LAYERS FOR
SIGE HBT PERFORMANCE OPTIMIZATION
13 20070102834 STRAIN-COMPENSATED METASTABLE COMPOUND BASE
HETEROJUNCTION BIPOLAR TRANSISTOR
14 20070102729 METHOD AND SYSTEM FOR PROVIDING A HETEROJUNCTION BIPOLAR
TRANSISTOR HAVING SIGE EXTENSIONS
15 20070102728 METHOD AND SYSTEM FOR CONTROLLED OXYGEN INCORPORATION IN
COMPOUND SEMICONDUCTOR FILMS FOR DEVICE PERFORMANCE
ENHANCEMENT
16 20070080411 SEMICONDUCTIVE FILM WITH DOPANT DIFFUSION BARRIER AND

8. TUNABLE WORK FUNCTION
17 20070054460 SYSTEM AND METHOD FOR PROVIDING A NANOSCALE, HIGHLY
SELECTIVE, AND THERMALLY RESILIENT SILICON, GERMANIUM, OR
SILICON-GERMANIUM ETCH-STOP
18 20060292809 METHOD FOR GROWTH AND OPTIMIZATION OF HETEROJUNCTION
BIPOLAR TRANSISTOR FILM STACKS BY REMOTE INJECTION
19 20060169318 SYSTEM, APPARATUS AND METHOD FOR CONTAMINANT REDUCTION IN
SEMICONDUCTOR DEVICE FABRICATION EQUIPMENT COMPONENTS
20 20060143913 VERY LOW MOISTURE O-RING AND METHOD FOR PREPARING THE SAME