1. WELCOME

2. METAL
OXIDE SEMICONDU
CTOR FIELD
EFFECT TRANSISTO
R
Topic

3. Presented by

4. Contents

5. Transistor& Type
A transistor is a semiconductor device used
to amplify or switch electronic signals and electrical power. It is
composed of semiconductor material with at least three
terminals for connection to an external circuit.
• BJT
•FET
1.JFET
2.MOSFET

6. MOSFET Circuit
The metal–oxide–
semiconductor
field-effect
transistor (MOSFET,
MOS-FET, or MOS
FET) is a type
of transistor used
for amplifying or
switching
electronic signals.

7. MOSFET Symbol Circuit

8. MOSFET
 A MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
is a semiconductor device.
 A MOSFET is most commonly used in the field of power electronics.
 A semiconductor is made of manufactured material that acts neither
like a insulator nor a conductor.
 Types

9. Structure of MOSFET

10. Schematic structure of
MOSFET

11. Working principle of MOSFET
 The working principle of MOSFET depends up on the
MOS capacitor.
 The MOS capacitor is the main part.
 The semiconductor surface at below the oxide layer and
between the drain and source terminal can be inverted
from p-type to n-type by applying a positive or negative
gate voltages respectively.
 When we apply positive gate voltage the holes present
beneath the oxide layer experience repulsive force and
the holes are pushed downward with the substrate

12. Working principle of MOSFET

13. Working principle of MOSFET
The depletion region is populated by the bound negative
charges, which are associated with the acceptor atoms.
The positive voltage also attracts electrons from the n+
source and drain regions in to the channel.
The electron reach channel is formed. Now, if a voltage is
applied between the source and the drain, current flows freely
between the source and drain gate voltage controls the
electrons concentration the channel.
Instead of positive if apply negative voltage a hole channel will
be formed beneath the oxide layer.

14. MOS transistors Symbols
D
S
G
D
S
G
G
S
D D
S
G
NMOS Enhancement NMOS
PMOS
Depletion
Enhancement
B
NMOS with
Bulk Contact
Channel

15. N and Pchannel of MOSFET

16. N and Pchannel of MOSFET
 If the MOSFET is an n-channel or nMOS FET, then the
source and drain are 'n+' regions and the body is a 'p' region.
 If the MOSFET is a p-channel or pMOS FET, then the source
and drain are 'p+' regions and the body is a 'n' region.

17. MOSFET Applications:

MOSFETs are used in digital integrated circuits, such as
microprocessors.
 Used in calculators.
 Used in memories and in logic CMOS gates.
 Used as analog switches.
 MOSFET devices are also applied in audio-frequency
power amplifiers for public address systems

18. MOSFET Applications
• Used as amplifiers.
• Used in the applications of power electronics and switch
mode power supplies.
• MOSFETs are used as oscillators in radio systems.
• Used in automobile sound systems and in sound
reinforcement systems

19. Single-type MOSFET switch
This analog switch uses a four-terminal simple, generally
enhancement mode, MOSFET of either P or N type.
In the case of an N-type switch, the body or back gate terminal
is connected to the most negative supply (usually GND in single
power supply systems) and the gate is used as the switch
control.
Whenever the gate voltage exceeds the source voltage by at
least a threshold voltage, the MOSFET conducts.

20. Single-type MOSFET switch
 The higher the gate voltage with respect to the source,
the lower the resistance of the switch will be. An NMOS
switch passes all voltages less than (Vgate
-Vtn
).
 When the switch is conducting, it typically operates in
the linear (or triode) region of operation, since the
source and drain voltages will typically be nearly equal.

21. Application
NMOS and PMOS turn on characteristics

22.  The explosion of digital technologies has
pushed the advancement of MOSFET
technologies faster than any other Si transistor.
This has happened due to the MOSFET being
the prime building block of CMOS digital logic
circuits.
 CMOS circuits are advantageous because they
allow virtually no current to pass through and
thus consume very little power.
Advancements of the MOSFET

23. Limitations of the MOSFET
Overheating is very much a concern when
considering today's integrated circuits contain
millions of transistors in a relatively small space.
 Recently, the small size of MOSFETs has
created operational problems as producing such
tiny transistors is an enormous challenge,