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www.stitairdd.org © 2009 N. N. Maurya
www.stitairdd.org © 2009 N. N. Maurya
CCD is a kind of transducer which
converts optical image into electrical
signal.
www.stitairdd.org © 2009 N. N. Maurya
+10 V
eeeee
Inversion Layer
Light
Reduced
Depletion
Layer
P
Majority Carrier Holes
N...
www.stitairdd.org © 2009 N. N. Maurya
Charge packet
p-type silicon
n-type silicon
SiO2 Insulating layer
Electrode Structur...
www.stitairdd.org © 2009 N. N. Maurya
Charge packets moves through the CCD
device
Charge packets to voltage conversion
...
www.stitairdd.org © 2009 N. N. Maurya
a b c a
+0.5V +0.5V+8V+4V
_
_ _
_
_ _
+0.5V +8V +0.5V +0.5V
a b c a
+0..5V +0.5V+8V+...
www.stitairdd.org © 2009 N. N. Maurya
7
+2 V +4 V +2 V +2 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
8
+2 V +4 V +8 V +2 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
9
+2 V +4 V +8 V +2 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
10
+2 V +2 V +8 V +2 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
11
+2 V +2 V +4 V +2 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
12
+2 V +2 V +4 V +8 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
13
+2 V +2 V +2 V +8 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
14
+2 V +2 V +2 V +4 V +2 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
15
+2 V +2 V +2 V +4 V +8 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
16
+2 V +2 V +2 V +2 V +8 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
17
+2 V +2 V +2 V +2 V +4 V +2 V
www.stitairdd.org © 2009 N. N. Maurya
There are three different types of CCD
chips used as a pick up device for CCD
camer...
www.stitairdd.org © 2009 N. N. Maurya
www.stitairdd.org © 2009 N. N. Maurya
www.stitairdd.org © 2009 N. N. Maurya
www.stitairdd.org © 2009 N. N. Maurya
www.stitairdd.org © 2009 N. N. Maurya
Connection pins
Gold bond wires
Bond pads
Silicon chip
Metal,ceramic or plastic pack...
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Ccd principles(nnm)

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Ccd principles(nnm)

  1. 1. www.stitairdd.org © 2009 N. N. Maurya
  2. 2. www.stitairdd.org © 2009 N. N. Maurya CCD is a kind of transducer which converts optical image into electrical signal.
  3. 3. www.stitairdd.org © 2009 N. N. Maurya +10 V eeeee Inversion Layer Light Reduced Depletion Layer P Majority Carrier Holes Now V = 10 volts, free holes repelled deeper into the substrate a depletion layer is formed below the electrode Depletion Layer When CCD Exposed to light photo electrons appears in inversion layer (potential well) & Depletion layer get reduced Substrate +10 V
  4. 4. www.stitairdd.org © 2009 N. N. Maurya Charge packet p-type silicon n-type silicon SiO2 Insulating layer Electrode Structure 1. Photons entering the CCD create electron-hole pairs. 2. The electrons are then attracted towards the most positive potential in the device where they create ‘charge packets’ 3. Each packet corresponds to one pixel pixel boundary pixel boundary incoming photons
  5. 5. www.stitairdd.org © 2009 N. N. Maurya Charge packets moves through the CCD device Charge packets to voltage conversion Finally delivered to output amplifier  Once the charge has been generated, it accumulates in the potential well, under the capacitor.  The control circuitry shifts the accumulated charge to the end of the row, to the input of a charge amplifier.
  6. 6. www.stitairdd.org © 2009 N. N. Maurya a b c a +0.5V +0.5V+8V+4V _ _ _ _ _ _ +0.5V +8V +0.5V +0.5V a b c a +0..5V +0.5V+8V+0..5V a b c a _ _ _ Electrode Insulation Layer Depletion Layer
  7. 7. www.stitairdd.org © 2009 N. N. Maurya 7 +2 V +4 V +2 V +2 V +2 V +2 V
  8. 8. www.stitairdd.org © 2009 N. N. Maurya 8 +2 V +4 V +8 V +2 V +2 V +2 V
  9. 9. www.stitairdd.org © 2009 N. N. Maurya 9 +2 V +4 V +8 V +2 V +2 V +2 V
  10. 10. www.stitairdd.org © 2009 N. N. Maurya 10 +2 V +2 V +8 V +2 V +2 V +2 V
  11. 11. www.stitairdd.org © 2009 N. N. Maurya 11 +2 V +2 V +4 V +2 V +2 V +2 V
  12. 12. www.stitairdd.org © 2009 N. N. Maurya 12 +2 V +2 V +4 V +8 V +2 V +2 V
  13. 13. www.stitairdd.org © 2009 N. N. Maurya 13 +2 V +2 V +2 V +8 V +2 V +2 V
  14. 14. www.stitairdd.org © 2009 N. N. Maurya 14 +2 V +2 V +2 V +4 V +2 V +2 V
  15. 15. www.stitairdd.org © 2009 N. N. Maurya 15 +2 V +2 V +2 V +4 V +8 V +2 V
  16. 16. www.stitairdd.org © 2009 N. N. Maurya 16 +2 V +2 V +2 V +2 V +8 V +2 V
  17. 17. www.stitairdd.org © 2009 N. N. Maurya 17 +2 V +2 V +2 V +2 V +4 V +2 V
  18. 18. www.stitairdd.org © 2009 N. N. Maurya There are three different types of CCD chips used as a pick up device for CCD cameras:  Interline transfer type  Frame transfer type  Frame interline transfer type  The only different about these types is the way charge is collected or transferred. CCD cameras with good resolution offers about 4,00,000 pixels or CCD element
  19. 19. www.stitairdd.org © 2009 N. N. Maurya
  20. 20. www.stitairdd.org © 2009 N. N. Maurya
  21. 21. www.stitairdd.org © 2009 N. N. Maurya
  22. 22. www.stitairdd.org © 2009 N. N. Maurya
  23. 23. www.stitairdd.org © 2009 N. N. Maurya Connection pins Gold bond wires Bond pads Silicon chip Metal,ceramic or plastic packageImage area Serial register On-chip amplifier

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