Usually remote-plasma equipment is used as plasma CVD equipment and dry etching equipment. The feature reduces the incidence ion bombardment and the influence of photons to the substrate, and makes easy control of distribution of the activated species on the substrate compared with parallel plate type plasma equipment in thin-film generation and thin-film processing.

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Plasma Enhanced materials processing and
rarefied GAS dynamics Unified Simulation tools
P E G A S U S

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ICP
H2/NF3 Remote-plasma simulation
Modules： PHM
NMEM

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Purpose
Usually remote-plasma equipment is used as plasma CVD equipment and
dry etching equipment.
The feature reduces the incidence ion bombardment and the influence of photons
to the substrate, and makes easy control of distribution of the activated species
on the substrate compared with parallel plate type plasma equipment
in thin-film generation and thin-film processing.

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Outline of equipment Model of simulation
H2
NF3
Substrate
r
z
RF
ε= 3.8r
R.F.
Gas-ring
H2
NF3

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400
Operating conditions
ICP coil Power： 200 [W]
Freq. : 13.56 [MHz]
Total gas flow rates： 300 [sccm]
H2 : NF3 = 2:1 (=200 : 100)
Pressure on the outlet : 10 [Pa]
Geometry
Temperature of walls and substrate : 313 [K]
Gas temperature : 313 [K]
Unit [mm]100
60
100
60
3
5
180
60
400
140

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Species ( electron, ions, and neutrals )
Charged spec. ：13
Neutral spec. ：13

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Gas-phase reactions ( hydrogen )

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Gas-phase reactions ( nitrogen,fluorine)

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Surface reactions
H 0.97 H2 0.5
H2 1.0
N 0.97 N2 0.5
N2 1.0
F 0.97 F2 0.5
F2 1.0
NxFy 1.0
I+ (正イオン) 0.0 I 1.0
(H,H2,N,N2,F,F2,NF,NF2,NF3)
H3
+ 0.0 H 1.0 H2 1.0
r
r : Reflection coeff.
1-r : Sticking coeff.
a、b : Emitted coeff.
1-r
(1-r)*a (1-r)*b
Incident Spec. Reflection coeff. Emitted spec./coeff.

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Computational results

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Time history of electron temp. at each monitoring cell

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Physical quantities
by R.F. coil
Electron density
and temperature
Inductive
E-field
[V/cm]
Adsorbed
power
[W/cm3]
Electron
temperature
[eV]
Electron
density
[/m3]

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H3
+ F - NF2
+
Ion density [/m3]
H+
Ion density [/m3]

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N H
Neutral density [/m3]
NF2 F
Neutral density [/m3]

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Mixture gas
Pressure
[Pa]
Velocity
[m/s]
NF3 H2
Neutral density [/m3]