SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3797 (Standard+BDS) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.
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Similaire à SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK
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SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Model Parameters) PART NUMBER: 2SK3797 MANUFACTURER: TOSHIBA Body Diode (Model Parameters ) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 2. Circuit Configuration All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 3. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Mobility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 4. Transconductance Characteristic Circuit Simulation Result 10 9 8 7 gfs 6 5 4 Measurement 3 Simulation 2 1 2 3 4 5 6 7 8 9 10 ID - Drain Current - A Comparison table gfs Id(A) Error(%) Measurement Simulation 1 3.000 3.03 1.000 2 4.200 4.255 1.310 5 6.400 6.494 1.469 10 9.000 9.174 1.933 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 5. Vgs-Id Characteristic Circuit Simulation result 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V I(V3) V_V2 Evaluation circuit V3 0Vdc U29 Vv ariable 10Vdc 2SK3797 20Vdc V2 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 6. Comparison Graph Circuit Simulation Result 10.00 Measurement 9.00 Simulation 8.00 7.00 ID - Drain Current - A 6.00 5.00 4.00 3.00 2.00 1.00 0 2 4 6 8 10 VGS - Gate to Source Voltage - V Simulation Result VGS(V) ID(A) Error (%) Measurement Simulation 1 4.400 4.431 0.705 2 4.650 4.713 1.355 5 5.200 5.291 1.750 10 5.800 5.958 2.724 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 7. Rds(on) Characteristic Circuit Simulation result 8.0A 7.0A 6.0A 5.0A 4.0A 3.0A 2.0A 1.0A 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(V3) V_VDS Evaluation circuit V3 0Vdc U29 VDS 10Vdc 2SK3797 0Vdc VGS 0 Simulation Result ID=6.5A, VGS=10V Measurement Simulation Error (%) R DS (on) 0.320 0.315 -1.563 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 8. Gate Charge Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V 0 20n 40n 60n 80n 100n V(W1:3) Time*1mS Evaluation circuit V2 0Vdc Dbreak PER = 1000u U29 PW = 600u W1 TF = 10n + 2SK3797 D1 TR = 10n I2 - TD = 0 13Adc I2 = 1m W I1 IOFF = 1mA I1 = 0 ION = 0uA V1 400Vdc 0 Simulation Result VDD=400V,ID=13A Measurement Simulation Error (%) ,VGS=10V Qgs(nC) 18.000 17.959 -0.228 Qgd(nC) 22.000 22.105 0.477 Qg 62.000 53.895 -13.073 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 9. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 0.1 2900 2904 0.138 0.2 2800 2801 0.036 0.5 2500 2510 0.400 1 2200 2196 -0.182 2 1700 1706 0.353 5 1080 1082 0.185 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 10. Switching Time Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0.8us 0.9us 1.0us 1.1us 1.2us 1.3us V(L2:1)/20 V(L1:2) Time Evaluation circuit L2 R2 50nH 30 L1 U32 30nH V1 = 0 2SK3797 V1 V2 = 10 V2 200Vdc TD = 1u R3 TR = 1n TF = 1n 50 PW = 10u PER = 200u 0 Simulation Result ID=6.5 A, VDD=200V Measurement Simulation Error(%) VGS=0/10V Ton(ns) 110.000 113.320 3.018 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 11. Output Characteristic Circuit Simulation result 30A 25A 20A 6.6V 15A 6.2V 10A 5.8.V 5.4V 5A VGS=5V 0A 0V 5V 10V 15V 20V 25V 30V I(Vdsense) V_Vvariable Evaluation circuit Vdsense 0Vdc U32 Vv ariable 10Vdc 2SK3797 20Vdc Vstep 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 12. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V I(R1) V_V1 Evaluation Circuit R1 0.01m 2SK3797 V1 0Vdc U29 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 13. Comparison Graph Circuit Simulation Result 100.00 Measurement Simulation Drain reverse current IDR(A) 10.00 1.00 0.10 0 0.4 0.8 1.2 1.6 Source-Drain voltage VSD(V) Simulation Result VSD(V) IDR(A) Measuremen Simulation %Error 0.1 0.590 0.590 0.000 0.2 0.620 0.620 0.000 0.5 0.660 0.661 0.152 1 0.700 0.694 -0.857 2 0.730 0.729 -0.137 5 0.780 0.788 1.026 10 0.850 0.846 -0.471 20 0.930 0.929 -0.108 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 14. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 2us 4us 6us 8us 10us 12us 14us 16us 18us 20us 22us I(R1) Time Evaluation Circuit R1 50 V1 = -9.4v V1 D3797 V2 = 10.7v TD = 0.8u U33 TR = 10ns TF = 19ns PW = 8us PER = 100us 0 Compare Measurement vs. Simulation Trr(us) Measurement Simulation Error (%) Trj+Trb 3.200 3.209 0.281 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 15. Reverse Recovery Characteristic Reference Trj=1.600(us) Trb=1.600(us) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 16. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 100V I(R1) V_V1 Evaluation Circuit R1 0.01m V1 0Vdc R2 U30 100MEG 2SK3797 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2006
- 17. Zener Voltage Characteristic Reference All Rights Reserved Copyright (c) Bee Technologies Inc. 2006