SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK

Device Modeling Report

COMPONENTS: Power MOSFET (Model Parameters)
PART NUMBER: 2SK3797
MANUFACTURER: TOSHIBA
Body Diode (Model Parameters ) / ESD Protection Diode

Bee Technologies Inc.

All Rights Reserved Copyright (c) Bee Technologies Inc. 2006

Circuit Configuration


MOSFET MODEL

PSpice model
Model description
parameter
LEVEL
L Channel Length
W Channel Width
KP Transconductance
RS Source Ohmic Resistance
RD Ohmic Drain Resistance
VTO Zero-bias Threshold Voltage
RDS Drain-Source Shunt Resistance
TOX Gate Oxide Thickness
CGSO Zero-bias Gate-Source Capacitance
CGDO Zero-bias Gate-Drain Capacitance
CBD Zero-bias Bulk-Drain Junction Capacitance
MJ Bulk Junction Grading Coefficient
PB Bulk Junction Potential
FC Bulk Junction Forward-bias Capacitance Coefficient
RG Gate Ohmic Resistance
IS Bulk Junction Saturation Current
N Bulk Junction Emission Coefficient
RB Bulk Series Resistance
PHI Surface Inversion Potential
GAMMA Body-effect Parameter
DELTA Width effect on Threshold Voltage
ETA Static Feedback on Threshold Voltage
THETA Mobility Modulation
KAPPA Saturation Field Factor
VMAX Maximum Drift Velocity of Carriers
XJ Metallurgical Junction Depth
UO Surface Mobility


Transconductance Characteristic

Circuit Simulation Result

10

9

8

7
gfs

6

5

4

Measurement
3
Simulation

2
1 2 3 4 5 6 7 8 9 10
ID - Drain Current - A

Comparison table

gfs
Id(A) Error(%)
Measurement Simulation
1 3.000 3.03 1.000
2 4.200 4.255 1.310
5 6.400 6.494 1.469
10 9.000 9.174 1.933


Vgs-Id Characteristic

Circuit Simulation result

30A

20A

10A

0A
0V 2V 4V 6V 8V 10V
I(V3)
V_V2

Evaluation circuit

V3

0Vdc

U29 Vv ariable

10Vdc 2SK3797
20Vdc

V2

0


Comparison Graph

10.00

Measurement
9.00
Simulation

8.00

7.00
ID - Drain Current - A

6.00

5.00

4.00

3.00

2.00

1.00
0 2 4 6 8 10
VGS - Gate to Source Voltage - V
Simulation Result

VGS(V)
ID(A) Error (%)
1 4.400 4.431 0.705
2 4.650 4.713 1.355
5 5.200 5.291 1.750
10 5.800 5.958 2.724


Rds(on) Characteristic

8.0A

7.0A

6.0A

5.0A

4.0A

3.0A

2.0A

1.0A

0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(V3)
V_VDS
Evaluation circuit

V3

0Vdc

U29 VDS

10Vdc 2SK3797
0Vdc

VGS

0

Simulation Result

ID=6.5A, VGS=10V Measurement Simulation Error (%)
R DS (on) 0.320  0.315  -1.563


Gate Charge Characteristic
20V

16V

12V

8V

4V

0V
0 20n 40n 60n 80n 100n
V(W1:3)
Time*1mS
Evaluation circuit

V2

0Vdc

Dbreak
PER = 1000u U29
PW = 600u W1
TF = 10n + 2SK3797 D1
TR = 10n I2
-
TD = 0 13Adc
I2 = 1m W
I1 IOFF = 1mA
I1 = 0 ION = 0uA

V1
400Vdc

0

Simulation Result

VDD=400V,ID=13A
Measurement Simulation Error (%)
,VGS=10V
Qgs(nC) 18.000 17.959 -0.228
Qgd(nC) 22.000 22.105 0.477
Qg 62.000 53.895 -13.073


Capacitance Characteristic

Measurement
Simulation

Simulation Result

Cbd(pF)
VDS(V) Error(%)
0.1 2900 2904 0.138
0.2 2800 2801 0.036
0.5 2500 2510 0.400
1 2200 2196 -0.182
2 1700 1706 0.353
5 1080 1082 0.185


Switching Time Characteristic


16V

14V

12V

10V

8V

6V

4V

2V

0V
0.8us 0.9us 1.0us 1.1us 1.2us 1.3us
V(L2:1)/20 V(L1:2)
Time
Evaluation circuit

L2 R2

50nH
30

L1
U32
30nH
V1 = 0 2SK3797 V1
V2 = 10 V2 200Vdc
TD = 1u R3
TR = 1n
TF = 1n 50
PW = 10u
PER = 200u

0

Simulation Result

ID=6.5 A, VDD=200V
Measurement Simulation Error(%)
VGS=0/10V
Ton(ns) 110.000 113.320 3.018


Output Characteristic


30A

25A

20A

6.6V
15A

6.2V

10A
5.8.V

5.4V
5A

VGS=5V
0A
0V 5V 10V 15V 20V 25V 30V
I(Vdsense)
V_Vvariable

Evaluation circuit

Vdsense

0Vdc

U32
Vv ariable
10Vdc 2SK3797

20Vdc

Vstep

0


BODY DIODE SPICE MODEL
Forward Current Characteristic


100A

10A

1.0A

100mA
0V 0.2V 0.4V 0.6V 0.8V 1.0V 1.2V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

2SK3797
V1
0Vdc U29

0


Comparison Graph


100.00
Measurement
Simulation
Drain reverse current IDR(A)

10.00

1.00

0.10
0 0.4 0.8 1.2 1.6

Source-Drain voltage VSD(V)

Simulation Result

VSD(V)
IDR(A) Measuremen Simulation %Error
0.1 0.590 0.590 0.000
0.2 0.620 0.620 0.000
0.5 0.660 0.661 0.152
1 0.700 0.694 -0.857
2 0.730 0.729 -0.137
5 0.780 0.788 1.026
10 0.850 0.846 -0.471
20 0.930 0.929 -0.108


Reverse Recovery Characteristic

400mA

300mA

200mA

100mA

-0mA

-100mA

-200mA

-300mA

-400mA
2us 4us 6us 8us 10us 12us 14us 16us 18us 20us 22us
I(R1)
Time
Evaluation Circuit

R1

50

V1 = -9.4v V1 D3797
V2 = 10.7v
TD = 0.8u U33
TR = 10ns
TF = 19ns
PW = 8us
PER = 100us

0

Compare Measurement vs. Simulation

Trr(us) Measurement Simulation Error (%)
Trj+Trb 3.200 3.209 0.281


Reverse Recovery Characteristic Reference

Trj=1.600(us)
Trb=1.600(us)
Conditions:Ifwd=lrev=0.2(A),Rl=50

Example

Relation between trj and trb


ESD PROTECTION DIODE SPICE MODEL
Zener Voltage Characteristic

10mA

9mA

8mA

7mA

6mA

5mA

4mA

3mA

2mA

1mA

0A
0V 10V 20V 30V 40V 50V 60V 70V 80V 90V 100V
I(R1)
V_V1

Evaluation Circuit

R1

0.01m

V1
0Vdc
R2
U30

100MEG 2SK3797

0


Zener Voltage Characteristic Reference


SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK

Recommandé

Recommandé

Contenu connexe

Tendances

Tendances (20)

Similaire à SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK

Similaire à SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK (20)

Plus de Tsuyoshi Horigome

Plus de Tsuyoshi Horigome (20)

Dernier

Dernier (20)

SPICE MODEL of 2SK3797 (Standard+BDS Model) in SPICE PARK