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Graphene and
2D electronics
Giuseppe Iannaccone - Università di Pisa
Semiconductor electronics
1947 - transistor
Semiconductor electronics
1947 - transistor

1961- first chip
Semiconductor electronics
1947 - transistor

1961- first chip

2012 Intel Core i7
3B transistors – 22 nm
Nanotransitors are
smaller than a virus
Why do we need all these
transistors?
Why do we need all these
transistors?

Atari PONG (1976)
3000 transistors
Why do we need all these
transistors?

Atari PONG (1976)
3000 transistors

FIFA 14
(2013)
500+ milions transisors
Not your dad’s transistor
(neither your elder brother’s one)
Not your dad’s transistor
(neither your elder brother’s one)

2001
130 nm
Silicon
SiO2 – poly gate
Planar [2D]
Not your dad’s transistor
(neither your elder brother’s one)

2001
130 nm
Silicon
SiO2 – poly gate
Planar [2D]

2011
22 nm
Strained silicon/Ge
High K/Metal gate
3D
Not your dad’s transistor
(neither your elder brother’s one)

2001
130 nm
Silicon
SiO2 – poly gate
Planar [2D]

2011
22 nm
Strained silicon/Ge
High K/Metal gate
3D
Graphene
(Manchester UK 2004)
Graphene is just one atomic layer
of graphite
Can it be a “new” material ?
In 2004 A. Geim and K. Novoselov isolated
and characterised graphene at Manchester
Univ.
2010 Nobel Prize for "for
groundbreaking experiments regarding
the two-dimensional material
graphene”
A material with
exceptional properties

• Stable in single monolayer form
• A truly 2D material (as thin as physically possible)
A material with
exceptional properties

• Stable in single monolayer form
• A truly 2D material (as thin as physically possible)
• Excellent electrical conductor (up to 1000x Si)
• Excellent thermal conductor
A material with
exceptional properties

• Stable in single monolayer form
• A truly 2D material (as thin as physically possible)
• Excellent electrical conductor (up to 1000x Si)
• Excellent thermal conductor
• Transparent and flexible
• Exceptionally Strong (300x Steel)
Graphene in Electronics?
Problem:
Graphene has
a zero energy
gap

Transistors
cannot be
switched off
Rules of the game
20

Increase gap and fabricate transistors, but
keep high mobility and reproducibility
Other 2D Materials

Boron Nidride
Et cetera …

Molybdenum disulfide
Our specialty: Early assessment of
device potential
NanoTCAD VIDES
3D atomistic device simulator
Released as open source as a
python module at
http://vides.nanotcad.com
400+ downloads, 60+ papers
A long story started from FP5
NanoTCAD Project (1999)– now G.
Fiori (UniPi) lead developer]
“This won’t work.
This neither.
Try instead this”
Lateral heterostructure FET
G. Fiori, G. Iannaccone
International PCT – ACS NANO 2012
24
Lateral G-BN Heterostructures
M.P. Levendorf
Nature 2012
(Cornell)

25
Europe’s bet on graphene
Thanks
Funding:
FP7 GRADE
FP7 GONEXTS
ESF DEWINT
FP7 GRAND
FP7 NANOSIL
MIUR GRANFET
…

Coworkers:
Gianluca Fiori
Massimo Macucci
Bruno Pellegrini
Paolo Marconcini
Demetrio Logoteta
Qin Zhang
Ravinder Pawar
Alessandro Betti
Samantha Bruzzone
Martina Cheli
Paolo Michetti

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Graphene and 2D Electronics [for a general "curious" audience]