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IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
__________________________________________________________________________________________
Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 127
A NEW APPROACH TO MINIMIZE STABILITY FACTOR OF AN
AMPLIFIER
Puneet Sharma1
, Atul Goyal2
, Mahendra Pindel3
1, 2, 3
M.TECH SCHOLAR, Dr B. R. Ambedkar National Institute of Technology Jalandhar, Punjab, India
Abstract
In this paper, a method is proposed for minimizing stability factor and removing the negative feedback from Self Bias Configuration of
an Amplifier. Stability is an important concern in the designing of Amplifier. For stabilization of an Amplifier different biasing
techniques are used. Among all biasing techniques Self Bias technique is best but the major drawback is the introduction of negative
feedback by Emitter resistance Re. Due to the introduction of negative feedback the gain of an amplifier decreases. An ideal Ammeter
has infinite internal resistance so to remove the negative feedback an ideal Ammeter is used instead of Emitter resistanceRe. With the
application of proposed method the Stability factor is minimized and coming out to be equal to Unity and the problem of negative
feedback is also removed. In this paper the analysis of proposed Self Bias Circuit is done with the help of Thevenin Theorem.
Keywords: Negative Feedback, Stability Factor, Self-Bias Circuit, Amplifier
-----------------------------------------------------------------------***-----------------------------------------------------------------------
1. INTRODUCTION
Transistors are used as amplifiers, oscillators, switching
circuits etc. However, the principal use of transistor is as an
amplifier [1]. An amplifier increases the magnitude of a given
signal applied to its input. Most of the transistor amplifiers are
required to work as linear amplifier. An amplifier is said to be
linear if its output voltage is a linear function of its input
voltage. Such a linear operation is ensured when zero signal
operating point is selected properly, desirably in the middle of
the active region and the operation is restricted in the linear
region of the characteristic curves, thereby avoiding the
distortion of the signal waveform [2]. Thus selection of zero
signal operating point is of great importance and may be done
by using suitable biasing arrangement i.e. by applying proper
dc voltages to emitter-to-base junction and collector-to-base
junction. The biasing circuit used in transistor should be such
as:
i. To establish conveniently the operating point in the
middle of the active region of the characteristics.
ii. To make the operating point independent of transistor
parameters
iii. To stabilize the collector current against temperature
variations.
2. MATERIALS AND METHODS
2.1 Stability Factor
Stability Factor S indicates the variation in collector current
Icdue to variation in reverse saturation current Icobecause of
variation in Temperature. Smaller the value of S, better will be
the thermal stability. In Ideal case the minimum value of S=1
and in Practical case, the minimum value of S=1.3. If S is less
than 1+𝛽 then the amplifier is stable otherwise unstable [3
𝑆 =
𝜕𝐼 𝑐
𝜕𝐼 𝑐𝑜
(1)
Where 𝑉𝐵𝐸 and 𝛽 are constant.
General equation of Stability Factor S
𝐼𝑐 = 𝛽𝐼𝑏 + (1 + 𝛽)𝐼𝑐𝑜 (2)
Differentiating both side with respect to𝐼𝑐
1 = 𝛽
𝜕𝐼 𝑏
𝜕𝐼 𝑐
+ 1 + 𝛽
𝜕𝐼 𝑐𝑜
𝜕𝐼 𝑐
(3)
Using Equation (1) in equation (3), we get
1 = 𝛽
𝜕𝐼 𝑏
𝜕𝐼 𝑐
+ 1 + 𝛽
1
𝑆
(4)
On simplifying Equation (4), we get
𝑆 =
1+𝛽
1−𝛽
𝜕 𝐼 𝑏
𝜕 𝐼 𝑐
(5)
2.2 Algorithm to Find Stability Factor S
Step 1: apply KVL to the input Mesh to obtain input Equation.
Step 2: Substitute𝐼𝑒 = 𝐼𝑐 + 𝐼𝑏 in input equation and simplify.
Step 3: differentiate the equation obtained above with respect
to𝐼𝑐 keeping 𝑉𝐵𝐸 and 𝛽 as constant.
Step 4: simplify the obtained equation to get
𝜕𝐼 𝑏
𝜕𝐼 𝑐
.
IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
__________________________________________________________________________________________
Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 128
Step 5: substitute the value of
𝜕𝐼 𝑏
𝜕𝐼 𝑐
in general equation of S.
2.3 Biasing Circuits
There are three basic Biasing Circuits
2.3.1 Fixed Bias Circuit
Fig -1: Fixed Bias Circuit
In fixed bias circuit the stability factor
S=1+β
S is very high that is poor thermal stability.
2.3.2 Collector to Base Bias Circuit
In collector to Base bias circuit Stability factor
𝑆 =
1+𝛽
1+𝛽
𝑅 𝑐
𝑅 𝑐+𝑅 𝑏
(6)
Fig -2: Collector to Base Bias Circuit
S is small that is the circuit is having good thermal stability.
The function of base resistance Rb is to provide a base current
to the transistor and since it is connected between collector
and base it will introduce the unwanted negative feedback and
reduces the voltage gain of the amplifier. This biasing circuit
is also practically rejected.
2.3.3 Self Bias Circuit
Fig -3: Self Bias Circuit
Self-bias circuit is also called potential divider or emitter bias
circuit. This is the popularly used biasing circuit. The BJT is
in CE mode with emitter resistance Re and will introduce 1800
phase shift for the input signal. R1 and R2 are biasing resistors
and they are used to provide a base current into the transistor (
R1≥ 10R2). Simplified Self-bias Circuit using Thevenin
Theorem.
Fig -4: Thevenin Equivalent of Self Bias Circuit
Thevenin open circuit voltage
VTh= Vcc
𝑅2
𝑅1+𝑅2
(7)
IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
__________________________________________________________________________________________
Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 129
And Thevenin Internal resistance
RTh= R1 || R2 (8)
On applying KVL in input Mesh
VTh = IbRTh + VBE + IeRe
Substitute Ie = Ic + Ib
and on simplifying, we get
VTh = IbRTh + VBE + IcRe + Ib Re
On differentiating with respect to Ic we get
0 = (RTh + Re)
∂Ib
∂Ic
+ Re
On simplifying,
∂Ib
∂Ic
=
−Re
RTh + Re
On substituting the above equation in equation (1)
𝑆 =
1+β
1+β
Re
RTh +Re
(9)
S is very small and that is self- bias circuit is having excellent
thermal stability.
Self- bias circuit with emitter resistance Re=0 is unstable and
stability factor becomes
S =1+β
That is Re is mainly responsible for providing the thermal
stability or Q-point stability in the circuit hence Re is called
the Stabilization Resistance. The major disadvantage of using
emitter resistance Re is that negative feedback is introduced in
the circuit due to which gain decreases.
2.4 Proposed Biasing Circuit
Fig -5: Proposed Biasing Circuit
To eliminate the problem of negative feedback across Re, a
practical current source is connected in place of emitter
resistance so that the internal resistance of current source
which is very large will be working as an emitter resistance in
the circuit. By this the problem of negative feedback in the
circuit is eliminated.
Fig -6: Thevenin Equivalent of Proposed Biasing Circuit
On applying KVL in input Mesh
VTh = IbRTh + VBE + R IR
Substitute IR = Ie - IA
and on simplifying, we get
VTh = IbRTh + VBE + IeR – IA R
On differentiating with respect to Ic we get
0 = (RTh + R)
∂Ib
∂Ic
+ R
On simplifying,
∂Ib
∂Ic
=
−R
RTh + R
On substituting the above equation in equation (1),
𝑆 =
1 + β
1 + β
R
RTh +R
S =
1+β (R+𝑅 𝑇ℎ )
1+β R + 𝑅 𝑇ℎ
(10)
As R is the internal Resistance of Ideal current source
therefore R is very high (𝑅 → ∞).
IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308
__________________________________________________________________________________________
Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 130
On applying this condition on Equation (10), we get
S = lim 𝑅→∞
1+β (R+𝑅 𝑇ℎ )
1+β R + 𝑅 𝑇ℎ
(11)
On solving, we get
S=1.
3. CONCLUSIONS
In this paper, we have proposed a method to stabilize the
amplifier with the help of an ideal Ammeter so that the
problem of negative feedback is also removed. An interesting
by-product of this work is that the minimum stability factor
i.e. S=1 is achieved.
REFERENCES
[1]. Ghandhi, S.K. “Bias Considerations in Transistor Circuit
Design”Circuit Theory, IRE Transactions on (Volume:4 ,
Issue: 3 )Sep 1957 Page-194 – 202.
[2]. Gaur, S.P. ,Navon, D.H. , Teerlinck, R.W. “Transistor
design and thermal stability”Published in: Electron Devices,
IEEE Transactions on (Volume:20 , Issue: 6 )Jun 1973
Page:527 – 534.
[3]. Sarmiento-Reyes, A. “A novel method to predict both the
upper bound on the number and the stability of DC operating
points of transistor circuits”Circuits and Systems, 1995.
ISCAS '95., 1995 IEEE International Symposium on
(Volume:1 ) 1995 Page:101 - 104 vol1.
BIOGRAPHIES
Puneet Sharma has completed his B. Tech in
Electronics and Communication Engineering from
JNIT, Jaipur in 2010 and is currently pursuing his
M. Tech in Dr. B. R. Ambedkar National Institute
of Technology, Jalandhar. His area of interest
includes Signal Processing, Electronic Devices,
Communication System and Control Engineering.
AtulGoyal has received his B. Tech degree in
Electronics and Communication Engineering from
VIT University in 2011 and is currently pursuing
his M. Tech in Dr. B. R. Ambedkar National
Institute of Technology, Jalandhar.
MahendraPindel has completed his B. Tech in
Electronics and Communication Engineering from
Marudhar Engineering College, Bikaner in 2011
and is currently pursuing his M. Tech in Dr. B. R.
Ambedkar National Institute of Technology,
Jalandhar.

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A new approach to minimize stability factor of an amplifier

  • 1. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308 __________________________________________________________________________________________ Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 127 A NEW APPROACH TO MINIMIZE STABILITY FACTOR OF AN AMPLIFIER Puneet Sharma1 , Atul Goyal2 , Mahendra Pindel3 1, 2, 3 M.TECH SCHOLAR, Dr B. R. Ambedkar National Institute of Technology Jalandhar, Punjab, India Abstract In this paper, a method is proposed for minimizing stability factor and removing the negative feedback from Self Bias Configuration of an Amplifier. Stability is an important concern in the designing of Amplifier. For stabilization of an Amplifier different biasing techniques are used. Among all biasing techniques Self Bias technique is best but the major drawback is the introduction of negative feedback by Emitter resistance Re. Due to the introduction of negative feedback the gain of an amplifier decreases. An ideal Ammeter has infinite internal resistance so to remove the negative feedback an ideal Ammeter is used instead of Emitter resistanceRe. With the application of proposed method the Stability factor is minimized and coming out to be equal to Unity and the problem of negative feedback is also removed. In this paper the analysis of proposed Self Bias Circuit is done with the help of Thevenin Theorem. Keywords: Negative Feedback, Stability Factor, Self-Bias Circuit, Amplifier -----------------------------------------------------------------------***----------------------------------------------------------------------- 1. INTRODUCTION Transistors are used as amplifiers, oscillators, switching circuits etc. However, the principal use of transistor is as an amplifier [1]. An amplifier increases the magnitude of a given signal applied to its input. Most of the transistor amplifiers are required to work as linear amplifier. An amplifier is said to be linear if its output voltage is a linear function of its input voltage. Such a linear operation is ensured when zero signal operating point is selected properly, desirably in the middle of the active region and the operation is restricted in the linear region of the characteristic curves, thereby avoiding the distortion of the signal waveform [2]. Thus selection of zero signal operating point is of great importance and may be done by using suitable biasing arrangement i.e. by applying proper dc voltages to emitter-to-base junction and collector-to-base junction. The biasing circuit used in transistor should be such as: i. To establish conveniently the operating point in the middle of the active region of the characteristics. ii. To make the operating point independent of transistor parameters iii. To stabilize the collector current against temperature variations. 2. MATERIALS AND METHODS 2.1 Stability Factor Stability Factor S indicates the variation in collector current Icdue to variation in reverse saturation current Icobecause of variation in Temperature. Smaller the value of S, better will be the thermal stability. In Ideal case the minimum value of S=1 and in Practical case, the minimum value of S=1.3. If S is less than 1+𝛽 then the amplifier is stable otherwise unstable [3 𝑆 = 𝜕𝐼 𝑐 𝜕𝐼 𝑐𝑜 (1) Where 𝑉𝐵𝐸 and 𝛽 are constant. General equation of Stability Factor S 𝐼𝑐 = 𝛽𝐼𝑏 + (1 + 𝛽)𝐼𝑐𝑜 (2) Differentiating both side with respect to𝐼𝑐 1 = 𝛽 𝜕𝐼 𝑏 𝜕𝐼 𝑐 + 1 + 𝛽 𝜕𝐼 𝑐𝑜 𝜕𝐼 𝑐 (3) Using Equation (1) in equation (3), we get 1 = 𝛽 𝜕𝐼 𝑏 𝜕𝐼 𝑐 + 1 + 𝛽 1 𝑆 (4) On simplifying Equation (4), we get 𝑆 = 1+𝛽 1−𝛽 𝜕 𝐼 𝑏 𝜕 𝐼 𝑐 (5) 2.2 Algorithm to Find Stability Factor S Step 1: apply KVL to the input Mesh to obtain input Equation. Step 2: Substitute𝐼𝑒 = 𝐼𝑐 + 𝐼𝑏 in input equation and simplify. Step 3: differentiate the equation obtained above with respect to𝐼𝑐 keeping 𝑉𝐵𝐸 and 𝛽 as constant. Step 4: simplify the obtained equation to get 𝜕𝐼 𝑏 𝜕𝐼 𝑐 .
  • 2. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308 __________________________________________________________________________________________ Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 128 Step 5: substitute the value of 𝜕𝐼 𝑏 𝜕𝐼 𝑐 in general equation of S. 2.3 Biasing Circuits There are three basic Biasing Circuits 2.3.1 Fixed Bias Circuit Fig -1: Fixed Bias Circuit In fixed bias circuit the stability factor S=1+β S is very high that is poor thermal stability. 2.3.2 Collector to Base Bias Circuit In collector to Base bias circuit Stability factor 𝑆 = 1+𝛽 1+𝛽 𝑅 𝑐 𝑅 𝑐+𝑅 𝑏 (6) Fig -2: Collector to Base Bias Circuit S is small that is the circuit is having good thermal stability. The function of base resistance Rb is to provide a base current to the transistor and since it is connected between collector and base it will introduce the unwanted negative feedback and reduces the voltage gain of the amplifier. This biasing circuit is also practically rejected. 2.3.3 Self Bias Circuit Fig -3: Self Bias Circuit Self-bias circuit is also called potential divider or emitter bias circuit. This is the popularly used biasing circuit. The BJT is in CE mode with emitter resistance Re and will introduce 1800 phase shift for the input signal. R1 and R2 are biasing resistors and they are used to provide a base current into the transistor ( R1≥ 10R2). Simplified Self-bias Circuit using Thevenin Theorem. Fig -4: Thevenin Equivalent of Self Bias Circuit Thevenin open circuit voltage VTh= Vcc 𝑅2 𝑅1+𝑅2 (7)
  • 3. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308 __________________________________________________________________________________________ Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 129 And Thevenin Internal resistance RTh= R1 || R2 (8) On applying KVL in input Mesh VTh = IbRTh + VBE + IeRe Substitute Ie = Ic + Ib and on simplifying, we get VTh = IbRTh + VBE + IcRe + Ib Re On differentiating with respect to Ic we get 0 = (RTh + Re) ∂Ib ∂Ic + Re On simplifying, ∂Ib ∂Ic = −Re RTh + Re On substituting the above equation in equation (1) 𝑆 = 1+β 1+β Re RTh +Re (9) S is very small and that is self- bias circuit is having excellent thermal stability. Self- bias circuit with emitter resistance Re=0 is unstable and stability factor becomes S =1+β That is Re is mainly responsible for providing the thermal stability or Q-point stability in the circuit hence Re is called the Stabilization Resistance. The major disadvantage of using emitter resistance Re is that negative feedback is introduced in the circuit due to which gain decreases. 2.4 Proposed Biasing Circuit Fig -5: Proposed Biasing Circuit To eliminate the problem of negative feedback across Re, a practical current source is connected in place of emitter resistance so that the internal resistance of current source which is very large will be working as an emitter resistance in the circuit. By this the problem of negative feedback in the circuit is eliminated. Fig -6: Thevenin Equivalent of Proposed Biasing Circuit On applying KVL in input Mesh VTh = IbRTh + VBE + R IR Substitute IR = Ie - IA and on simplifying, we get VTh = IbRTh + VBE + IeR – IA R On differentiating with respect to Ic we get 0 = (RTh + R) ∂Ib ∂Ic + R On simplifying, ∂Ib ∂Ic = −R RTh + R On substituting the above equation in equation (1), 𝑆 = 1 + β 1 + β R RTh +R S = 1+β (R+𝑅 𝑇ℎ ) 1+β R + 𝑅 𝑇ℎ (10) As R is the internal Resistance of Ideal current source therefore R is very high (𝑅 → ∞).
  • 4. IJRET: International Journal of Research in Engineering and Technology eISSN: 2319-1163 | pISSN: 2321-7308 __________________________________________________________________________________________ Volume: 03 Issue: 02 | Feb-2014, Available @ http://www.ijret.org 130 On applying this condition on Equation (10), we get S = lim 𝑅→∞ 1+β (R+𝑅 𝑇ℎ ) 1+β R + 𝑅 𝑇ℎ (11) On solving, we get S=1. 3. CONCLUSIONS In this paper, we have proposed a method to stabilize the amplifier with the help of an ideal Ammeter so that the problem of negative feedback is also removed. An interesting by-product of this work is that the minimum stability factor i.e. S=1 is achieved. REFERENCES [1]. Ghandhi, S.K. “Bias Considerations in Transistor Circuit Design”Circuit Theory, IRE Transactions on (Volume:4 , Issue: 3 )Sep 1957 Page-194 – 202. [2]. Gaur, S.P. ,Navon, D.H. , Teerlinck, R.W. “Transistor design and thermal stability”Published in: Electron Devices, IEEE Transactions on (Volume:20 , Issue: 6 )Jun 1973 Page:527 – 534. [3]. Sarmiento-Reyes, A. “A novel method to predict both the upper bound on the number and the stability of DC operating points of transistor circuits”Circuits and Systems, 1995. ISCAS '95., 1995 IEEE International Symposium on (Volume:1 ) 1995 Page:101 - 104 vol1. BIOGRAPHIES Puneet Sharma has completed his B. Tech in Electronics and Communication Engineering from JNIT, Jaipur in 2010 and is currently pursuing his M. Tech in Dr. B. R. Ambedkar National Institute of Technology, Jalandhar. His area of interest includes Signal Processing, Electronic Devices, Communication System and Control Engineering. AtulGoyal has received his B. Tech degree in Electronics and Communication Engineering from VIT University in 2011 and is currently pursuing his M. Tech in Dr. B. R. Ambedkar National Institute of Technology, Jalandhar. MahendraPindel has completed his B. Tech in Electronics and Communication Engineering from Marudhar Engineering College, Bikaner in 2011 and is currently pursuing his M. Tech in Dr. B. R. Ambedkar National Institute of Technology, Jalandhar.