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OUTLINE
 PRINCIPLE
 CHARACTERISTICS
 p-i-n, APD, InGaAs APD
 NOISE
 RESPONSE TIME
 MERITS
 DEMERITS
 APPLICATIONS
PRINCIPLE
 Designed to operate in Reverse Bias
condition.
 Photoelectric effect:
CHARACTERISTICS
 The primary photocurrent resulting from absorption is:
 Quantum Efficiency:
 Responsivity:
 S/N:
)1)(1( )(
0 f
w
p ReP
h
q
I s
  




hP
qIP
/
/
photonsincidentof#
pairsatedphotogenerhole-electronof#
0


[A/W]
0 

h
q
P
IP

powernoiseamplifierpowernoisetorphotodetec
ntphotocurrefrompowersignal


N
S
p-i-n PHOTODIODE
 The high electric field present in the depletion region causes
photo-generated carriers to separate and be collected across the
reverse –biased junction. This give rise to a current flow in an
external circuit, known as photocurrent.
w
Energy Band Diagram
AVALANCHE PHOTODIODE
(APD)
 Internally multiplies the primary photocurrent
before entry.
 photogenerated electrons and holes travel through
high field region & gain enough energy to ionize
bound electrons in VB upon colliding with them.
This multiplication is known as impact ionization.
 The newly created carriers in the presence of high
electric field result in more ionization called
avalanche effect.
InGaAs APD
Metal contact
InP multiplication layer
InGaAs Absorption layer
InP buffer layer
InP substrate
LIGHT
NOISE
 Quantum (Shot) noisephoto-generated
electrons.
 Dark current noise: current continues to flow
through the bias circuit in the absence of the light.
=bulk dark current + surface dark current
thermally generated e
and h in the pn junction
surface defects, bias
voltage and surface area
RESPONSE TIME
 Depends on:
Transit time of photocarriers.
Diffusion time of photocarriers outside depletion
region.
RC time constant large value limits the
detector response time.
d
d
v
w
t 
MERITS
 PIN  detect high energy charged or uncharged particles &
also electromagnetic radiation
 no gain, so useful in some applications
 no high operating voltage required
 low noise & cost
 high efficiency
 long lifetime
 APD  large gain
 greater level of sensitivity
 high speed
DEMERITS
 PIN:
Less sensitivity
No internal gain
Small area
Slow response time
 APD:
Much higher operating voltage required
Much higher level of noise
Output is not linear
Requires high reverse bias for operation
Not as widely used due to low reliability
APPLICATIONS
 PIN photodiode  most widely used
Audio CD players
DVD players
Computer CD drives
Optical communication systems
Nuclear radiation detectors
 APD  level of gain is of importance for high voltage
requirement.
Laser range finders
fast receiver modules for data communications
high speed laser scanner (2D bar code reader)
speed gun
PET Scanner
microscopy and particle detection.
THANK
YOU

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PHOTODETECTORS

  • 1.
  • 2. OUTLINE  PRINCIPLE  CHARACTERISTICS  p-i-n, APD, InGaAs APD  NOISE  RESPONSE TIME  MERITS  DEMERITS  APPLICATIONS
  • 3. PRINCIPLE  Designed to operate in Reverse Bias condition.  Photoelectric effect:
  • 4. CHARACTERISTICS  The primary photocurrent resulting from absorption is:  Quantum Efficiency:  Responsivity:  S/N: )1)(1( )( 0 f w p ReP h q I s        hP qIP / / photonsincidentof# pairsatedphotogenerhole-electronof# 0   [A/W] 0   h q P IP  powernoiseamplifierpowernoisetorphotodetec ntphotocurrefrompowersignal   N S
  • 5. p-i-n PHOTODIODE  The high electric field present in the depletion region causes photo-generated carriers to separate and be collected across the reverse –biased junction. This give rise to a current flow in an external circuit, known as photocurrent. w
  • 8.  Internally multiplies the primary photocurrent before entry.  photogenerated electrons and holes travel through high field region & gain enough energy to ionize bound electrons in VB upon colliding with them. This multiplication is known as impact ionization.  The newly created carriers in the presence of high electric field result in more ionization called avalanche effect.
  • 9. InGaAs APD Metal contact InP multiplication layer InGaAs Absorption layer InP buffer layer InP substrate LIGHT
  • 10. NOISE  Quantum (Shot) noisephoto-generated electrons.  Dark current noise: current continues to flow through the bias circuit in the absence of the light. =bulk dark current + surface dark current thermally generated e and h in the pn junction surface defects, bias voltage and surface area
  • 11. RESPONSE TIME  Depends on: Transit time of photocarriers. Diffusion time of photocarriers outside depletion region. RC time constant large value limits the detector response time. d d v w t 
  • 12. MERITS  PIN  detect high energy charged or uncharged particles & also electromagnetic radiation  no gain, so useful in some applications  no high operating voltage required  low noise & cost  high efficiency  long lifetime  APD  large gain  greater level of sensitivity  high speed
  • 13. DEMERITS  PIN: Less sensitivity No internal gain Small area Slow response time  APD: Much higher operating voltage required Much higher level of noise Output is not linear Requires high reverse bias for operation Not as widely used due to low reliability
  • 14. APPLICATIONS  PIN photodiode  most widely used Audio CD players DVD players Computer CD drives Optical communication systems Nuclear radiation detectors  APD  level of gain is of importance for high voltage requirement. Laser range finders fast receiver modules for data communications high speed laser scanner (2D bar code reader) speed gun PET Scanner microscopy and particle detection.