Avnet Electronics Marketing presents power devices for solar inverters from STMicroelectronics. Presentation includes: ST 600 vs. SiC diodes, Power MOSFET families, MDmesh series. Choosing the ideal switches for solar inverters and more.

1. ST Microelectronics Power Devices for Solar Inverters Available from Avnet Electronics Marketing www.avnetexpress.com

2. ST 600 V SiC diodes

5. Reliability-test boards SiC repetitive I FSM reliability board Repetitive I F of 40 A on STPSC1006D SiC high dV/dt reliability board (dV/dt)off = 120 kV/  s Turn-on of the SiC diode 100 V/div 0V Turn-off of the SiC diode

6. Key performance information Key features at 25 °C, for all 600 V devices STPSC406D I Fav 4 A Q c 3 nC V F (typ/max) 1.55 V/1.90 V I FRM 14 A STPSC606D I Fav 6 A Q c 6 nC V F (typ/max) 1.40 V/1.70 V I FRM 27 A STPSC806D I Fav 8 A Q c 10 nC V F (typ/max) 1.40 V/1.70 V I FRM 30 A STPSC1006D I Fav 10 A Q c 12 nC V F (typ/max) 1.40 V/1.70 V I FRM 40 A STPSC1206D I Fav 12 A Q c 12 nC V F (typ/max) 1.40 V/1.70 V I FRM 65 A

7. ST 600 V SiC diode roadmap February 08 Range extension Package extension Product qualification Range and package extension April 08 8/10 A diodes Qualification April 09 4, 6 and 12 A diodes Qualification May 09 SMD: DPAK, D²PAK 2010 20 A TO-247 2010/11 1200v Extension

12. The latest high-voltage power MOSFET family

13. MDmesh series: continuous improvement 2006 MDmesh/FDmesh II - 45% 2000 MDmesh/FDmesh 2009 MDmesh/FDmesh V - 65% R DS(on) x area [normalized]

16. MDmesh V extending to medium voltage *Coming soon VDS (V) Part number R DS(on) (m Ω) Package Application 650 STY112N65M5 22 Max-247 PV inverter (400 V DC bus) 650 STW77N65M5 38 TO-247 PV inverter (400 V DC bus) 650 STW60N65M5 57 TO-247*/TO-3PF* PV inverter (400 V DC bus) 650 STx42N65M5 79 TO-220/TO-T20FP/ D2PAK/I2PAK/TO-247 PV inverter (400 V DC bus) 250 STB50N25M5 65 D2PAK PV micro inverter (110 V mains) 200 STP80N20M5 20 TO-220*/D2PAK* PV micro inverter (110 V mains)

17. SuperMESH 5 900 to 1200 V MOSFET series 2007 SuperMESH3 -30% 2001 SuperMESH 2009 SuperMESH 5 -70% STP21N90K5: best R DS(on) in TO-220 R DS(on) x area [normalized]

22. * Coming soon IGBT ultra-fast W series Part number I C @ 100 °C (A) V CE(sat) @ V GE = 15 V (V) Switching frequency (kHz) Anti-parallel diode Package STGF19NC60WD 19 2.1 Up to 70 Yes TO-220FP STGP19NC60W(D) 22 2.1 Up to 70 No (Yes) TO-220 STGW19NC60W(D) 23 2.1 Up to 70 No (Yes) TO-247 STGW35HF60WD 35 1.9 Over 100 Yes TO-247 STGW45HF60WD* 45 1.9 Over 100 Yes TO-247

23. * Coming soon IGBT very low drop S and XS series Part number IC @ 100 °C (A) V CE(sat) @ V GE = 15 V (V) Anti-parallel diode Package STGF20NB60S 13 1.25 @ Ic = 20 A No TO-220FP STGW35NB60S(D) 35 1.25 @ Ic = 20 A No (Yes) TO-247 STGW50NC60XSD 50 1.1 @ Ic = 30 A Yes – Ultra fast TO-247 STGW50NC60XSCD* 50 1.1 @ Ic = 30 A Yes - SiC TO-247

24. Ideal combo for mixed frequency Example 1 Topology: Full-bridge mixed frequency High-frequency leg Low-frequency leg Ultra-fast IGBT W series with ultra-fast or SiC anti-parallel diodes XS or S low drop IGBT series with standard anti-parallel diode MDmesh + Schottky + ultra-fast or SiC anti-parallel diode MDmesh High-frequency leg Low-frequency leg

25. Topology: Full-bridge mixed frequency Ideal combo for mixed frequency Example 2 High side Low side Ultra-fast IGBT W series and fast anti-parallel diode XS or S low drop IGBT series with ultra-fast or SiC anti-parallel diodes Low drop IGBT Fast IGBT High-frequency low side Low-frequency high side

26. Topology: Three level Ideal combo for mixed frequency Example 3 Inner switches Outer switches Clamp diodes, D5 and D6 XS or S low drop IGBT series and standard anti-parallel diode Ultra-fast IGBT W series with ultra-fast anti-parallel diode Ultra-fast or SiC diodes XS or S low drop IGBT series and standard anti parallel diode MOSFETs – Fast diode Ultra-fast or SiC diodes Low drop IGBT Fast IGBT Fast IGBT Low drop IGBT

30. ESBT driving network The suggested driving network for full compatibility with a standard 3-pin voltage-driven device .

32. ESBT versus IGBT Solar inverter setup for evaluation of the performance gain Two identical 15 kW solar inverters with ESBT or IGBT boost stage Input current up to 40 A High-efficiency three-level technology AC stage in IGBT technology

33. ESBT versus IGBT Solar inverter efficiency and losses compared for ESBT and lGBT ESBT boost stage efficiency gain of 0.7 % is approved Reduced losses of up to 70 W by using ESBTs Reduced cooling requirements with ESBT usage