Explication of Diodes

1. Electrónica
Analógica
Eduardo Emanuel Tovias
Garza
Engineer Aurelio García
Técnico Mecatrónica
Área Automatización
30th June 2020 - Matamoros,
Tamaulipas

3. In physics and electrical engineering, a conductor is an object or
type of material that allows the flow of charge (electrical current) in
one or more directions.
Materials made of metal are common electrical conductors.
Electrical current is generated by the flow of negatively charged
electrons, positively charged holes, and positive or negative ions in
some cases.
Excellent Conductor of Electricity: Copper is an excellent
conductor of electricity; no other metal can compete with it in terms
of electrical conductivity. The wires made of this reddish metal are
capable of carrying comparatively more electric current per diameter
of wire.
Copper is used for making
electrical wires that are used,
due to its properties that make
it an ideal metal for this
purpose.

4. An electrical insulator is a material in which the electron does not
flow freely or the atom of the insulator have tightly bound electrons
whose internal electric charges do not flow freely; very little electric
current will flow through it under the influence of an electric field.
This contrasts with other materials, semiconductors and conductors,
which conduct electric current more easily.
The property that distinguishes an insulator is its resistivity; insulators
have higher resistivity than semiconductors or conductors. The most
common examples are non-metals.
Insulators are used to protect us from the dangerous effects of
electricity flowing through conductors.
Sometimes the voltage in an electrical circuit can be quite high and
dangerous.
If the voltage is high enough, electric current can be made to flow
through even materials that are generally not considered to be good
conductors
Insulators have low
conductivities, practically
don’t allow the electric circuit
to flow through them

5. Semiconductor, any of a class of crystalline solids intermediate in electrical
conductivity between a conductor and an insulator.
Semiconductors are employed in the manufacture of various kinds of
electronic devices, including diodes, transistors, and integrated circuits.
Semiconductors materials such as silicon (Si), germanium (Ge) and gallium
arsenide (GaAs), have electrical properties somewhere in the middle,
between those of a “conductor” and an “insulator”. They are not good
conductors nor good insulators (hence their name “semi”-conductors).
They have very few “free electrons” because their atoms are closely
grouped together in a crystalline pattern called a “crystal lattice” but
electrons are still able to flow, but only under special conditions.
Allow a portion of electric current to flow through them
Different types of diodes

7. Instrictic Extrictic
when the network is not doped with any impurity,
an intrinsic semiconductor is known,
which is a pure semiconductor
and behaves like an insulator,
that means that the number
of atoms and holes is complete
When we dope our electron network we call it an N-type extrinsic
semiconductor
When we dope it with holes we call it an extrinsic semiconductor
P-type

8. P-Type Extrinsic Material
A semiconductor P, is a semiconductor that has increased a
number of holes, which allows the holes to be used as links, this
hole can be used to receive electrons and can promote the flow
of electrons during an electric current.
Note: P = Positive, allows the Flow of
electrons with holes.
N-type = Negative, allows the Flow of
eletrons with extra electrons that with a
voltage this allows the Flow of current.

9. N-Type Extrinsic Material
Mainly when an impurity is added, this has been an N-type
semiconductor, this means that by applying a voltage, the
electrons are pushed from one side to the other, allowing the
flow of electrons.

10. The PN junction is the border
where the, so this structure is
also called a junction diode. N
and P regions meet.
This separation of charges
causes the appearance of an
electric field that opposes the
diffusion of carriers. This means
that the field will eventually
stop the diffusion of electrons
through the junction. We can say
that the electric field creates a
potential barrier that prevents
the diffusion of electrons.

11. A PN-junction diode is formed when a
p-type semiconductor is fused to an
n-type semiconductor creating a
potential barrier voltage across the
diode junction
When a diode is connected in a Forward
Bias condition, a negative voltage is applied to
the N-type material and a positive voltage is
applied to the P-type material. If this external
voltage becomes greater than the value of the
potential barrier, approx. 0.7 volts for silicon
and 0.3 volts for germanium, the potential
barriers opposition will be overcome and
current will start to flow.

12. When a diode is connected in a Reverse
Bias condition, a positive voltage is applied to
the N-type material and a negative voltage is
applied to the P-type material.
The positive voltage applied to the N-type
material attracts electrons towards the
positive electrode and away from the junction,
while the holes in the P-type end are also
attracted away from the junction towards the
negative electrode.
The net result is that the depletion layer grows
wider due to a lack of electrons and holes and
presents a high impedance path, almost an
insulator. The result is that a high potential
barrier is created thus preventing current from
flowing through the semiconductor material.

13. D
i
o
d
e
Junction Diode Symbol and Static

14. Datasheet for diodes 1N400x
The 1N400x (or 1N4001 or 1N4000) series is a family of
popular 1 A general-
purpose silicon rectifier diodes commonly used in AC
adapters for common household appliances.
Its blocking voltage varies from 50 volts (1N4001) to
1000 volts (1N4007).
This JEDEC device number series is available in the DO-
41 axial package, and similar diodes are available
in SMA and MELF surface mount packages (in other
part number series).
The 1N400x series was originally introduced
by Motorola's Semiconductor Products Division and
registered at JEDEC in 1963, as silicon power rectifiers
primarily for military and industrial applications.