The document compares two power design options: integrated silicon and GE point-of-load (POL). It lists factors such as ease of design, motherboard real estate, reliability, scalability, performance, cost, EMI/ripple/noise, and features in a head-to-head comparison. For most factors, integrated silicon is rated higher than GE POL due to advantages like tighter footprints utilizing available height, better thermal performance and electrical conversion efficiency, and leveraging the best components available for the design.

1. GE
Critical Power
Power Design - Head to Head
Integrated Silicon vs. GE Point of Load (POL)
In the match-up between two leading power design options, one clear winner emerges…
RELIES ON
IN-HOUSE
EXPERTISE
POWER MODULE
WIZARD
ONLINE DESIGN TOOL AND
FAE TECHNICAL SUPPORT
Integrated Silicon: GE POL:
Ease of
Design
Motherboard
Real Estate
Reliability
Scalability
Performance
Capacitance &
Transient Response
Design Approach
Cost
EMI, Ripple
& Noise
Feature
www.gecriticalpower.com
VERTICALLY DENSE.
HEIGHT REDUCED
AT EXPENSE OF FOOTPRINT
HORIZONTALLY DENSE.
TIGHTER FOOTPRINTS
UTILIZING AVAILABLE HEIGHT
HIGH
IPC9592 ADHERENCE
SINGLE SOURCED
INDUSTRY, DOSA &
PMBusTM
STANDARD
FOOTPRINT
BETTER THERMAL
PERFORMANCE
& ELECTRICAL
CONVERSION EFFICIENCY
STANDARD
EXPENSIVE
WIDER SPECTRUM,
POOR FILTERING
LIMITED / POOR
DIGITAL &
ANALOG RICH
TIGHT & ADJUSTABLE
FREQUENCY
HIGH VALUE
RESTRICTEDBY DEFAULT CONTROL
LOOP SETTING
LIMITEDTO THEIR OWN
COMPONENT LIBRARY
OPTIMALUSING TUNABLE LOOP
LEVERAGE BEST
COMPONENTS
AVAILABLE FOR THE DESIGN
HIGHIPC COMPLIANCE UNKNOWN