1. JONGHOON J. KIM
Terahertz Interconnection and Package Lab.
373-1, Electrical Engineering KAIST
Daejeon, Republic of Korea (ZIP: 305-701)
Tel: +82-10-4664-2494
Fax: +82-42-879-9870
E-mail: jonghoonk@kaist.ac.kr
RESEARCH EXPERIENCES
Design of high-speed connectors and automotive connectors
Development of high-speed socket based on silicone rubber substrate
Design of rubber-based test interposer for LPDDR4 testing
Design of package-level and chip-level magnetically-coupled embedded current
probing structures for simultaneous switching current measurement
Contactless wafer-level TSV connectivity testing method using magnetic
coupling
Details of above researches are described from page. 8
EDUCATION
Korea Advanced Institute of Science and Technology (Daejeon, Korea)
Ph. D. in Electrical Engineering (Feb. 2013 ~ Present)
- Research area
Design of embedded magnetically-coupled current probing structure on chip level
Design of rubber-based test interposer for LPDDR4
Development of high-speed socket based on silicone rubber substrate
Signal integrity and power integrity in hierarchical systems
- Dissertation topic
Design and Verification of Magnetic Probing Structure and Rubber-based Test
Interposer for LPDDR4
- Advisor : Prof. Joungho Kim
M. S. in Electrical Engineering (Feb. 2011 ~ Feb. 2013)
- Research area
2. Contactless wafer-level TSV connectivity testing method using magnetic coupling
Design of embedded magnetically-coupled current probing structure on package
level
- Dissertation topic
Contactless Wafer-level TSV Connectivity Testing and Embedded Current
Measurement using Magnetic Coupling
- Advisor : Prof. Joungho Kim
B. S. in Electrical Engineering (Sept. 2006 ~ Feb. 2011)
- Preferred area : Electromagnetics
RESEARCH PROJECTS
Design of Test Methodologies for TSV-based 3D-IC (2011 ~ 2013)
- Sponsor : SK Hynix Semiconductor Inc., Korea
- Research on magnetic coupling mechanism
- Design of structure for contactless wafer-level TSV connectivity testing using magnetic
coupling
- Simulation and measurement in both frequency- and time-domains
Design of Short Circuit Current Sensor (2012 ~ 2013)
- Sponsor : Korea Electric Terminal (KET), Korea
- Design of short circuit current sensor targeted for electric vehicles
- Simulation and measurement in time-domain
Design of High-Speed Connectors (2014 ~ Present)
- Sponsor : Korea Electric Terminal (KET), Korea
- Design of high-speed connectors: HDMI, MHL, OCM, PCIe, TTA
- Design of paddle PCBs for high speed connectors
- Design of automotive connectors: FAKRA
- Simulation and measurement in frequency- and time-domains
Design of Rubber-Based Test Socket (2014 ~ Present)
- Sponsor : Silicone Rubber Contactor (SRC), Korea
- Design of rubber-based test interposer for LPDDR4 testing
- Development of high-speed socket based on silicone rubber substrate
- Simulation and measurement in frequency- and time-domains
WORK EXPERIENCES
Silicon image Inc. (Sunnyvale, CA, USA, Jan. 2014 ~ Present)
Consultant
3. - Characterization and analysis of high-speed connectors using EM simulators
- Measurement-based evaluation of high-speed connectors
Samsung Electronics (Suwon, Korea, Jan. 2013 ~ Present)
Lecturer
- Fundamental and Advanced Signal Integrity
Transmission line, reflection, impedance matching, crosstalk, inter-symbol
interference, return path, equalization technique
- Fundamental Power Integrity
Decoupling capacitor, mode resonance, reference change, power noise isolation
methods
TECHNICAL SKILL SET
Design tools
- Virtuoso(Cadence) for IC-level
- PADS (Mentor) for Package- and PCB-levels
Simulation tools
- HFSS, SIwave, Q3D (Ansys) and CST MWS (CST) for EM Simulator
- ADS (Agilent) for Circuit & RF simulators
Programming tools
- MATLAB, Java, and C language for computation and programming
Equipment
- Vector Network Analyzer, Microprobe, Spectrum Analyzer
- TDR/TDT, Oscilloscope, Signal & Pulse Pattern Generator
INVITED SEMINARS
Seminar at Silicon Image Inc. (Sunnyvale, CA, USA, Oct. 26, 2012)
- Invited as a presenter
- Title : Embedded Toroidal Magnetic Probe in Multi-Layer PCBs for Current Measurement
Seminar at Silicon Image Inc. (Sunnyvale, CA, USA, Oct. 30, 2014)
- Invited as a presenter
- Title : A Novel Testing Solution for LPDDR4: TERAPOSER
Seminar at Intel Inc. (Folsom, CA, USA, Oct. 31, 2014)
- Invited as a presenter
- Title : A Novel Testing Solution for LPDDR4: TERAPOSER
4. AWARD
2012 IMAPS Best of Session (San Diego, USA, 2012)
Heegon Kim, Jun So Pak, Daniel H. Jung, Jonghoon J. Kim and Joungho Kim,
“Measurement-based Signal Quality Test and Analysis of High-speed TSV Channel,” IMAPS
2012, San Diego, USA, Sep. 2012
2014 EMC Tokyo Excellent Paper Award Winner (Tokyo, Japan, 2014)
Sunkyu Kong, Jonghoon Kim, Bumhee Bae, Jonghoon J. Kim, Sukjin Kim and Joungho
Kim, “Electromagnetic Radiated Emissions from a Wireless Power Transfer System using a
Resonant Magnetic Field Coupling,” EMC Tokyo 2014, Tokyo, Japan, Dec. 2013
Samsung 1nside Edge Third Place (Seoul, Korea, 2014)
Chiuk Song, Hongseok Kim, Daniel H. Jung, Jonghoon J. Kim, Sunkyu Kong, Jiseong Kim,
Jonghoon Kim and Joungho Kim, “Low EMI and High Efficiency Handheld Resonant
Magnetic Field Charger (HH-RMFC) for Electric Vehicle,” Samsung 1nside Edge, Seoul,
Korea, Nov. 2014
SELECTED PATENTS
Jonghoon J. Kim and Joungho Kim, “Through Silicon Via Connectivitys Probing Element,
Test Device including the Same and Connectivity Test Method ” Korea, Registration date :
May. 2013
Jonghoon J. Kim, Changhyun Cho and Joungho Kim, “Embedded Toroidal Coil and Method
manufacturing thereof, and Multilayer Printed Circuit,” Korea, Registration date : Oct. 2013
Changhyun Cho, Jonghoon J. Kim and Joungho Kim, “Embedded Toroid and Method
Manufacturing thereof, and Stack Integral Circuit Device,” Korea, Application date : Dec.
2013
PUBLICATIONS
<Journal>
1. Jonghoon J. Kim, Changhyun Cho, Hajin Sung, Bumhee Bae, Sukjin Kim, Sunkyu Kong,
Heegon Kim, Daniel Jung, Jiseong Kim, and Joungho Kim, “Chip Level Simultaneous
Switching Current Measurement in Power Distribution Network using Magnetically-Coupled
Embedded Current Probing Structure,” Components, Packaging and Manufacturing
Technology, IEEE Transactions on , vol.4, no.12, pp.1963,1972, Dec. 2014
2. Kyoungchoul Koo, Myunghoi Kim, Jonghoon J. Kim, Joungho Kim, and Jiseong Kim,
"Vertical Noise Coupling From On-Chip Switching-Mode Power Supply in a Mixed-Signal
5. Stacked 3-D-IC," Components, Packaging and Manufacturing Technology, IEEE
Transactions on , vol.3, no.3, pp.476,488, March 2013
3. Bumhee Bae, Jonghoon J. Kim, Sukjin Kim, Sunkyu Kong, and Joungho Kim, " Noise
Coupling Effects on CMOS Analog-to-Digital Converter in Magnetic Field Wireless Power
Transfer System using Chip-PCB Co-modeling and Simulation," Electromagnetic
Compatibility, IEEE Transactions on, vol.PP, no.99, pp.1,10
4. Sukjin Kim, Daniel Jung, Jonghoon J. Kim, Bumhee Bae, Sunkyu Kong, Seungyoung Ahn,
Jonghoon Kim, and Joungho Kim, “High Efficiency PCB and Package Level Wireless Power
Transfer Interconnection Scheme using Magnetic Field Resonance Coupling,” Components,
Packaging and Manufacturing Technology, IEEE Transactions on, Accepted
5. Daniel H. Jung, Heegon Kim, Sukjin Kim, Jonghoon J. Kim, Bumhee Bae, Jonghoon Kim,
Jong-Min Yook, Jun-Chul Kim, and Joungho Kim, “30 Gbps High-Speed Characterization
and Channel Performance of Coaxial Through Silicon Via,” Microwave and Wireless
Components Letters, IEEE , vol.24, no.11, pp.814,816, Nov. 2014
6. Sunkyu Kong, Bumhee Bae, Daniel H. Jung, Jonghoon J. Kim, Sukjin Kim, Chiuk Song,
Jonghoon Kim, and Joungho Kim, “An Investigation of Electromagnetic Radiated Emission
and Interference from Multi-Coil Wireless Power Transfer Systems using Resonant Magnetic
Field Coupling,” Microwave Theory and Techniques, IEEE Transactions on , vol.63, no.3,
pp.833,846, March 2015
<Conference>
1. Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Changhyun Cho, Daniel H. Jung, Joungho Kim,
and Jun So Pak, "Contactless Wafer-Level TSV Connectivity Testing Method using Magnetic
Coupling," EDAPS, 2012 IEEE
2. Jonghoon J. Kim, Heegon Kim, Sunkyu Kong, Daniel H. Jung, Joungho Kim, and Jiseong
Kim, "Embedded Toroidal Magnetic Coupling Probe in Multi-layer PCBs for Current
Measurement," EPEPS, 2012 IEEE
3. Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong,
Junho Lee, Kunwoo Park, and Joungho Kim, ““Non-Contact Wafer-Level TSV Connectivity
Test Methodology using Magnetic Coupling,” 3DIC, 2013 IEEE
4. Jonghoon J. Kim, Heegon Kim, Sukjin Kim, Bumhee Bae, Daniel H. Jung, Sunkyu Kong,
Junho Lee, Kunwoo Park, and Joungho Kim “Design of Contactless Wafer-Level TSV
Connectivity Testing Structure using Capacitive Coupling,” EMC COMPO, 2013 IEEE
5. Jonghoon J. Kim, Bumhee Bae, Sukjin Kim, Sunkyu Kong, Heegon Kim, Daniel H. Jung,
and Joungho Kim, “Magnetically-Coupled Current Probing Structure Consisting of TSVs and
RDLs in 2.5D and 3D ICs,” 3DIC, 2014 IEEE
6. Sunkyu Kong, Jonghoon J. Kim, and Joungho Kim, "Resonance and EMI in Vertical Multi-
coupled Coils for Wireless Power Transfer (WPT) System," IMWS, 2012 IEEE
7. Sunkyu Kong, Jonghoon J. Kim, Laehyuk Park, Unkyoo Park, Jiseong Kim, and Joungho
6. Kim, "Near-Field Intensity Prediction Model at Maximum Transferred Power Frequency in
Mutual-coupled Rectangular Coils for WPT System," APEMC, 2012 IEEE
8. Sukjin Kim, Myunghoi Kim, Sunkyu Kong, Jonghoon J. Kim, and Joungho Kim, "On-chip
Magnetic Resonant Coupling with Multi-Stacked Inductive Coils for Chip-to-chip Wireless
Power Transfer (WPT)," EMCS, 2012 IEEE
9. Heegon Kim, Jonghyun Cho, Daniel H. Jung, Jonghoon J. Kim, Joungho Kim, and Jun So
Pak, "Measurement-based Signal Quality Test of High-speed TSV Channel," IMAPS, 2012
10. Daniel H. Jung, Joohee Kim, Heegon Kim, Jonghoon J. Kim, Joungho Kim, Jun So Pak,
Jong-Min Yook, and Jun Chul Kim, “Frequency and Time Domain Measurement of
Through-Silicon Via (TSV) Failure,” EPEPS, 2012 IEEE
11. Changhyun Cho, Jonghyun Cho, Jonghoon J. Kim, Joungho Kim, and Jun So Pak, "Design
and implementation of magnetically coupled current probe for monitoring simultaneous
switching current in package," EPTC, 2012 IEEE
12. Changhyun Cho, Jonghoon J. Kim, Joungho Kim, and Jun So Pak, “Design and
Characterization of Magnetically Coupled On‐Chip Current Probe for Monitoring Switching
Current in Chip I/O PDN,” EDAPS, 2012 IEEE
13. Daniel H. Jung, Joohee Kim, Heegon Kim, Jonghoon J. Kim, Joungho Kim, and Jun So
Pak, "Disconnection Failure Model and Analysis of TSV-based 3D ICs," EDAPS, 2012 IEEE
14. Bumhee Bae, Jonghyun Cho, Sunkyu Kong, Jonghoon J. Kim, Yujeong Shim, and Joungho
Kim, “How to Improve Power Integrity on Analog-to-Digital Converter (ADC) with Chip-PCB
Hierarchical Structure,” DesignCon, 2013
15. Eunseok Song, Hongseok Kim, Jonghoon J. Kim, Jiseong Kim, and Joungho Kim,
“Measurement and analysis of Voltage Transfer Ratio (VTR) of package-level WPT
considering PDN conditions,” APEMC, 2013 IEEE
16. Sukjin Kim, Hongseok Kim, Jonghoon J. Kim, Bumhee Bae, Sunkyu Kong, and Joungho
Kim, "Electromagnetic interference shielding effects in wireless power transfer using
magnetic resonance coupling for board-to-board level interconnection," EMC, 2013 IEEE
17. Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Jong-Min Yook, Jun Chul Kim,
and Joungho Kim, “Fault Isolation in Through Silicon Via (TSV) Structure using Frequency
and Time-domain Measurement and Analysis,” APRASC, 2013
18. Daniel H. Jung, Jonghyun Cho, Heegon Kim, Jonghoon J. Kim, Hongseok Kim, Hyun-
Cheol Bae, and Kwang-Seong Choi, and Joungho Kim, “Fault Isolation of Short Defect in
Through Silicon Via (TSV) based 3D-IC,” 3DIC, 2013 IEEE
19. Heegon Kim, Jonghyun Cho, Jonghoon J. Kim, Daniel H. Jung, Sumin Choi, Junho Lee,
Kunwoo Park, and Joungho Kim, “Eye-diagram Simulation and Analysis of a High-speed
TSV-based Channel,” 3DIC, 2013 IEEE
20. Sukjin Kim, Bumhee Bae, Sunkyu Kong, Daniel H. Jung, Jonghoon J. Kim, and Joungho
Kim, “Design, Implementation and Measurement of Board-to-Board Wireless Power Transfer
(WPT) for Low voltage Applications,” EPEPS, 2013 IEEE
7. 21. Eunseok Song, Hongseok Kim, Chiuk Song, Jonghoon J. Kim, and Jungho Kim “Wireless
Power Distribution Network for 3D Package using Magnetic Field Resonance,” EDAPS, 2013
IEEE
22. Bumhee Bae, Sunkyu Kong, Jonghoon J. Kim, Sukjin Kim, and Joungho Kim, “Magnetic
Field Coupling on Analog-to-Digital Converter from Wireless Power Transfer System in
Automotive Environment,” EMC COMPO, 2013 IEEE
23. Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Hyun-Cheol Bae, Kwang-seong Choi, and
Joungho Kim, “Modeling and Analysis of Open Defect in Through Silicon Via (TSV)
Channel,” EMC COMPO, 2013 IEEE
24. Heegon Kim, Jonghyun Cho, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi, Junho Lee,
Kunwoo Park, and Joungho Kim, “Design and Measurement of a Compact On-interposer
Passive Equalizer for Chip-to-chip High-speed Differential Signaling,” EMC COMPO, 2013
IEEE
25. Sukjin Kim, Daniel H. Jung, Jonghoon J. Kim, Bumhee Bae, Sunkyu Kong, Chiuk Song,
and Joungho Kim, "Modeling of electromagnetic interference shielding materials in wireless
power transfer for board-to-board level interconnections," WPTC, 2014 IEEE
26. Sunkyu Kong, Bumhee Bae, Jonghoon J. Kim, Sukjin Kim, Daniel H. Jung, and Joungho
Kim, "Electromagnetic radiated emissions from a repeating-coil wireless power transfer
system using a resonant magnetic field coupling," WPTC, 2014 IEEE
27. Eunseok Song, Hongseok Kim, Jonghoon J. Kim, Chiuk Song, Hyunsuk Lee, and Joungho
Kim, "Reductions in power noise and system area burden using wireless power transfer
scheme in 3D package," WPTC, 2014 IEEE
28. Sunkyu Kong, Jonghoon Kim, Bumhee Bae, Jonghoon J. Kim, Sukjin Kim, and Joungho
Kim, “Electromagnetic Radiated Emissions from a Wireless Power Transfer System using a
Resonant Magnetic Field Coupling,” EMC TOKYO, 2014 IEEE
29. Hyunsuk Lee, Heegon Kim, Kiyeong Kim, Daniel H. Jung, Jonghoon J. Kim, Sumin Choi,
Jaemin Lim, Hyungsoo Kim, Kunwoo Park, and Joungho Kim, “Electrical Characterization of
Bump-less High Speed Channel on Silicon, Organic and Glass Interposer,” EMC SI/PI, 2014
IEEE
30. Eunjung Lee, Manho Lee, Jonghoon J. Kim, Mijoo Kim, Jonghoon Kim, Jeoungkun Park,
Younghoon Joo, Yoonhee Bang, Il Kim, Seungki Nam, and Jongho Kim, “Ground Guard
Structure to Reduce the Crosstalk Noise and Electromagnetic Interference (EMI) in a Vertical
Probe Card for Wafer-level Testing,” EMC SI/PI, 2014 IEEE
31. Sukjin Kim, Yeonje Cho, Jonghoon J. Kim, Bumhee Bae, Sunkyu Kong, and Joungho Kim,
“Electroststic Discharge(ESD) Effects on Wireless Power Transfer using Magnetic
Resonance Coupling,” EMC SI/PI, 2014 IEEE
32. Eunjung Lee, Manho Lee, Jonghoon J.Kim, Mijoo Kim, Jonghoon Kim, Jeoungkeun Park,
Jonghyun Park, Yoonhee Bang, Il Kim and Joungho Kim, “High-speed Probe Card Design to
Reduce the Crosstalk Noise for Wafer-level Test,” EPEPS, 2014 IEEE
8. 33. Sumin Choi, Heegon Kim, Kiyeong Kim, Daniel H. Jung, Jonghoon J. Kim, Jaemin Lim,
Hyunsuk Lee, Hyungsoo Kim, Yongju Kim, Yunsaing Kim and Joungho Kim, “Crosstalk
Included Eye Diagram Estimation of High-speed and Wide I/O Interposer Channel for 2.5D /
3D IC”, EPEPS, 2014 IEEE
34. Jinwook Song, Sukjin Kim, Bumhee Bae, Hongseok Kim, Jonghoon J. Kim, Dong-Hyun Bill
Kim and Joungho Kim, “Analysis of Wireless Power Transfer System Design on Active
Silicon Interposer for Low Voltage Applications in 3D-IC,” EPEPS, 2014 IEEE
35. Daniel H. Jung, Heegon Kim, Jonghoon J. Kim, Sukjin Kim, Hyun-Cheol Bae, Kwang-
Seong Choi, and Joungho Kim, “Fault Detection and Isolation of Multiple Defects in Through
Silicon Via (TSV) Channel,” 3DIC, 2014 IEEE
36. Jinwook Song, Sukjin Kim, Bumhee Bae, Jonghoon J. Kim, Daniel H. Jung, and Joungho
Kim, “Design and Analysis of Magnetically Coupled Coil Structures for PCB-to-Active
Interposer Wireless Power Transfer in 2.5D/3D-IC,” EDAPS, 2014 IEEE
37. Bumhee Bae, Jonghoon J. Kim, Sukjin Kim, Sunkyu Kong, and Joungho Kim,
“Electromagnetic Noise Effects on Semiconductor System in Electric Vehicle,” DesignCon,
2015
38. Heegon Kim, Kiyeong Kim, Jingook Kim, Changwook Yoon, Hyungsoo Kim, Jonghoon J.
Kim, and Joungho Kim, “A Fast Statistical Eye-diagram Estimation Method for High-speed
Channel including Non-linear Receiver Circuit,” DesignCon, 2015
RESEARCH DESCRIPTION
Design of high-speed connectors: MHL, OCM, HDMI, PCIe, TTA
- Connector 3D Modeling for EM simulation (shown in Fig. 1)
- Design of paddle and test jig PCBs (shown in Fig. 2)
- Development of design guide for connector plug and receptacle considering impedance
matching and crosstalk
- Simulation-based characterization for developed connectors simulators (shown in Fig. 3)
- Measurement-based characterization for developed connectors using TDR and VNA
(shown in Fig. 4)
9. Fig. 1. Structure of MHL connector for analysis and EM simulation
Fig. 2. Design of paddle and test PCBs; the paddle PCB is used to interconnect the connector to
cable with minimized impedance mismatching.
(a) (b)
Fig. 3. Simulation-based characterization for developed connectors using EM simulator for
evaluating (a) impedance and (b) far-end crosstalk (FEXT)
10. (a) (b)
Fig. 4. Measurement-based characterization for developed connectors with cables using (a) TDR for
evaluating impedance and (b) VNA for evaluating insertion loss
Design of automotive connectors: FAKRA
- Design of test jig PCBs (shown in Fig. 5)
- Measurement-based characterization for developed connectors using TDR and VNA
(shown in Fig. 6)
Fig. 5. Design of test jig PCB for FAKRA: 1) SMD type and 2) DIP type
(a) (b)
Fig. 6. Measurement-based characterization for FAKRA using (a) TDR for evaluating impedance and
0.00 1.00 2.00 3.00 4.00 5.00 6.00
Freq [GHz]
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
Y1
KET-FAKRA_140127smd_49_50
m1
m2
m3
m4
Curve Info
VSWR(Port1)
Import3 : FAKRA_49_SMD_VSWR
VSWR(Port1)_1
Import8 : FAKRA_49_cutPAD_SMD_VSWR
VSWR(Port1)_2
Import9 : FAKRA_49_smPAD_SMD_VSWR
VSWR(Port1)_3
Import4 : FAKRA_50_SMD_VSWR
VSWR(Port1)_4
Import10 : FAKRA_50_cutPAD_SMD_VSWR
VSWR(Port1)_5
Import11 : FAKRA_50_smPAD_SMD_VSWR
VSWR(Port1)_6
Import17 : FAKRA_48_cutPAD_SMD_VSWR
VSWR(Port1)_7
Import18 : FAKRA_51_cutPAD_SMD_VSWR
Name X Y
m1 3.0000 1.1968
m2 3.0000 1.2525
m3 6.0000 1.8771
m4 6.0000 1.9575
11. (b) VNA for evaluating VSWR
Development of high-speed socket based on silicone rubber substrate
- Modeling of the high-speed socket based on silicone rubber substrate (shown in Fig. 7)
- Experimental verification of the silicone rubber socket in time-domain (shown in Fig. 8)
Fig. 7. Structure and equivalent circuit model of silicone rubber socket, which includes metal
powders with silicone dielectric. The powders, when compressed, forms a vertical interconnection
(a) (b)
Fig. 8. Experimental verification of the rubber-based high-speed socket: (a) modeled eye diagram
using equivalent circuit model and (b) measured eye diagram at the data rate of 9.6 Gbps
Design of rubber-based test interposer for LPDDR4 testing
- Dissertation topic of Ph. D. degree
- Design of rubber-based test interposer for LPDDR4 testing (shown in Fig. 9)
- Development of design guide for test interposers considering stub effects, skew control,
crosstalk, impedance matching, ground via placement, and so forth.
- Eye-diagram simulation of the data to be observed at the receiver, as well as on the
probing pad of the test interposer using transient simulation (shown in Fig. 10)
12. (a) (b)
Fig. 9. (a) Top view and (b) bottom view of the proposed test interposer and manual socket
(a) (b)
Fig. 10. Simulated eye diagram of DQ at (a) receiver Rx (b) probing pad on the test interposer
Design of package-level and chip-level magnetically-coupled embedded current
probing structures for simultaneous switching current measurement
- Dissertation topic of M. S. degree and Ph. D. degree
- Design of package-level and chip-level magnetically-coupled embedded current probing
structures for simultaneous switching current measurement (shown in Fig. 11)
Accuracy : Being embedded on package and chip close to the actual PDN, its
accuracy on measuring simultaneous switching current can highly be improved
Tunability : Depending on which design criteria we want to focus on – either
bandwidth or sensitivity – we can simply change the dimensions of the proposed
current probing structures
- Experimental verification of the proposed structures on package-level and chip-level.
(shown in Fig. 12)
13. Fig. 11. Overview of proposed magnetically-coupled embedded current probing structure for
simultaneous switching current measurement
(a) (b)
Fig. 12. Experimental verification of the proposed structures on (a) package-level with comparison to
conventional active current probe, CT-6 and (b) chip-level with comparison to SPICE simulation
Contactless wafer-level TSV connectivity testing method using magnetic
coupling
- Dissertation topic of M. S. degree
- Design of structure for contactless wafer-level TSV connectivity testing (shown in Fig.
13)
The proposed method detects the change in the capacitance between adjacent
TSVs for disconnection detection without physical contact, and can avoid such
challenges as mechanical stress
Wafer-level structure is verified using EM simulation, as well as equivalent circuit
model of TSV and channels.
- Experimental verification of proposed contactless-level TSV connectivity testing method
by using test vehicle on PCB level (shown in Fig. 14)
14. Fig. 13. Overview of the proposed contactless wafer-level TSV connectivity testing method
Fig. 14. Experimental verification of proposed method using test vehicle on PCB level