Kristijonas Vizbaras

Lithuania Lithuania

CTO at Brolis Semiconductors

Electronics / Computer Hardware

Molecular Beam Epitaxy of antimonides and arsenides with an emphasis on growth of complex mixed-group-V alloys and low-dimensional structures. Development and fabrication of room-temperature GaSb-based mid-wave infrared type-I QW lasers for wavelength range from 2 to 4 µm. Development and fabrication of high-power GaAs-based near infrared laser diodes, emitting in 0.8 - 1.1 µm. Developement of GaSb, GaAs and InP-based heterostructures with non-common anion interfaces. Specialties: epitaxial growth, semiconductor laser fabrication and design, antimonides, arsenides