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Silicon carbide

       Shih PingEn




1                     31.05.2012
INDEX

     Production.


     Properties.


     Applications.

2                     31.05.2012
Production
     1893: Henri Moissan discovered silicon carbide


     The mineral was named moissanite in his honor


     Synthetic silicon carbide: Acheson graphite
     electric resistance furnace with high temperature
     1700 - 2500 C




3                                                   31.05.2012
Production
     The material formed in the Acheson furnace
     varies in purity

     Silicon carbide exists in about 250 crystalline
     forms

     The most common is Alpha silicon carbide. It is
     formed at temperatures > 1700 C



4                                                  31.05.2012
Properties
     Low density.
     High strength.
     Low thermal expansion.
     High thermal conductivity.
     High hardness.
     High elastic modulus.
     Excellent thermal shock resistance.
     Superior chemical inertness.

5                                           31.05.2012
Properties
     Apperance: Gray, Black sometimes colourless.


     Flexural strength (MPa):550; gray iron 350.


     Hardness (Mohs): 9.6; diamond 10.


     Density (g/cm³): 3.21; diamond 3.5.


     Melting point(ºC): 2730; Si 1410 C.


     Specific heat(J/KgK): 750; Si 700; Ge 320.

6                                                    31.05.2012
Applications
     Such as:
    - Automobile parts: Disc brake, sensitive sensor, etc.



    - Power plants: nuclear fuel particle coatings, nuclear fuel cladding.
    - Steel production and graphene production.
    - Ballistic vest.
    - Jewelry.
    - Cutting tools.
    -…(s,c).
     However, what is really interesting is its application on the field of
       the power electronic:

7                                                                  31.05.2012
Examples




    SiC ceramic.


                               SiC tubes.




                   SiC ring.
8                                           31.05.2012
Applications
     Schottky diodes, tryristors, MOSFETs, IGBT, etc.
        Characteristics:
        - Ultrafast.
        - High Thermal properties.
        - High Voltage work condition.
        - Better system efficiency.

                                                                     First Commercial Silicon Carbide Power MOSFET




       Infineon’s 3G SiC Schottky diodes, in both DPAK and TO-220 package

9                                                                                                31.05.2012
Applications
     - Ultrafast switching frequency:

      - High performance PFC(Power Factor
        Compensation)-inverter for air-conditioning.
      - High performance frequency variable motor drives.




10                                                     31.05.2012
Applications
     - High Thermal properties
       (3x of Si aprox):

      - Solar inverter less of power losses.



      - Chip size reduction …economical benefices.




11                                               31.05.2012
Applications
     - High Thermal properties
       (3x of Si aprox):

      - Solar inverter less of power losses.



      - Chip size reduction …economical benefices.




12                                               31.05.2012
Applications
      - High Voltage work condition:

      Breakdown V aprox. 10x of Si.
      Motor control and power supplies:
      -Industrial motor drive.           600~1200 V
      - Automotive                        600~1200 V
      - Elevator, automation.             600~1700 V
      - Power supply Alternative sources. 600~1200 V
      - Electric railway system.          1200~6500V
      - Power network.                    >10kV

13                                               31.05.2012
Bibliography
      http://www.i-micronews.com
      http://www.eeweb.com
      http://www.articlesbase.com
      http://www.wikipedia.com
      http://semisouth.com/archives/155
      http://powerelectronics.com
      http://www.cree.com/products/pdf/CMF20120D.p
       df
      http://accuratus.com/silicar

14                                            31.05.2012
END

     Thank you for your time!
         SPEed Works.
        Have a good time!
                     For questions send an e-mail to pinshi@etsid.upv.es




15                                                    31.05.2012
END

     Sorry, but this already
            the end.
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END

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Silicon Carbide

  • 1. Silicon carbide Shih PingEn 1 31.05.2012
  • 2. INDEX  Production.  Properties.  Applications. 2 31.05.2012
  • 3. Production  1893: Henri Moissan discovered silicon carbide  The mineral was named moissanite in his honor  Synthetic silicon carbide: Acheson graphite electric resistance furnace with high temperature 1700 - 2500 C 3 31.05.2012
  • 4. Production  The material formed in the Acheson furnace varies in purity  Silicon carbide exists in about 250 crystalline forms  The most common is Alpha silicon carbide. It is formed at temperatures > 1700 C 4 31.05.2012
  • 5. Properties  Low density.  High strength.  Low thermal expansion.  High thermal conductivity.  High hardness.  High elastic modulus.  Excellent thermal shock resistance.  Superior chemical inertness. 5 31.05.2012
  • 6. Properties  Apperance: Gray, Black sometimes colourless.  Flexural strength (MPa):550; gray iron 350.  Hardness (Mohs): 9.6; diamond 10.  Density (g/cm³): 3.21; diamond 3.5.  Melting point(ºC): 2730; Si 1410 C.  Specific heat(J/KgK): 750; Si 700; Ge 320. 6 31.05.2012
  • 7. Applications  Such as: - Automobile parts: Disc brake, sensitive sensor, etc. - Power plants: nuclear fuel particle coatings, nuclear fuel cladding. - Steel production and graphene production. - Ballistic vest. - Jewelry. - Cutting tools. -…(s,c).  However, what is really interesting is its application on the field of the power electronic: 7 31.05.2012
  • 8. Examples SiC ceramic. SiC tubes. SiC ring. 8 31.05.2012
  • 9. Applications  Schottky diodes, tryristors, MOSFETs, IGBT, etc. Characteristics: - Ultrafast. - High Thermal properties. - High Voltage work condition. - Better system efficiency. First Commercial Silicon Carbide Power MOSFET  Infineon’s 3G SiC Schottky diodes, in both DPAK and TO-220 package 9 31.05.2012
  • 10. Applications - Ultrafast switching frequency: - High performance PFC(Power Factor Compensation)-inverter for air-conditioning. - High performance frequency variable motor drives. 10 31.05.2012
  • 11. Applications - High Thermal properties (3x of Si aprox): - Solar inverter less of power losses. - Chip size reduction …economical benefices. 11 31.05.2012
  • 12. Applications - High Thermal properties (3x of Si aprox): - Solar inverter less of power losses. - Chip size reduction …economical benefices. 12 31.05.2012
  • 13. Applications - High Voltage work condition:  Breakdown V aprox. 10x of Si.  Motor control and power supplies: -Industrial motor drive.  600~1200 V - Automotive  600~1200 V - Elevator, automation.  600~1700 V - Power supply Alternative sources. 600~1200 V - Electric railway system.  1200~6500V - Power network.  >10kV 13 31.05.2012
  • 14. Bibliography  http://www.i-micronews.com  http://www.eeweb.com  http://www.articlesbase.com  http://www.wikipedia.com  http://semisouth.com/archives/155  http://powerelectronics.com  http://www.cree.com/products/pdf/CMF20120D.p df  http://accuratus.com/silicar 14 31.05.2012
  • 15. END Thank you for your time! SPEed Works. Have a good time! For questions send an e-mail to pinshi@etsid.upv.es 15 31.05.2012
  • 16. END Sorry, but this already the end. 16 31.05.2012
  • 17. END There will be no more pages... 17 31.05.2012
  • 18. END Believe me... 18 31.05.2012