1. SILICON ZENER DIODE CHIPS
DEVICE NO : MD-1011
1. Application:
This specification applies to P/N/P silicon zener double diode chips,
Device No. MD-1011
. Structure:
2-1. planar type.
2-2. Electrodes : Top side : Aluminum alloy.
Back side : Isolation layer
3. Dimensions:
3-1. Chip size : 11.0 mils × 11.0 mils ( 0.280 mm × 0.280 mm ).
3-2. Chip thickness : 5.9 ± 1.0 mils ( 0.150 ± 0.025 mm ).
3-3. Active Area : 6.7 mils × 6.7 mils x 1/2 x 2 (0.170 mm × 0.170 mm x 1/2 x 2).
3-4. Dual Bonding Pad Area : 8.0 mils × 8.0 mils x 1/2 x 2
(0.204 mm × 0.204 mm x 1/2 x 2).
3-4. Pattern drawing : Refer to the attached drawing.
℃
4. Electrical Characteristics (Ta= 25℃)
Parameter Symbol Condition Min. Typ. Max. Unit
VR=4V 100 nA
Reverse
IR
Leakage
Current
VR=5V 0.5 µA
Zener
VZ IZ=5mA
Breakdown 6.5 9.0 V
Voltage
5. Pattern Drawing
MOUCHIAN OPTOELECTRONIC Co.,Ltd.
Tel: 886-3-5647136
Fax:886-3-5647180
Dec.2007