Multi‐finger SOI MOS devices exhibit a low ESD failure current, related to the thin Si‐film and the complete isolation of the transistor body regions, causing non ]uniform conduction in bipolar snapback mode. The traditional layout approaches (silicide blocked junctions, increased gate length) are compared and a novel layout concept is proposed to improve uniform triggering.
Excellent ESD performance around 3mA/um2 is achieved for minimum dimension, fully silicided devices in a 90nm SOI technology.
2012 The impact of a decade of Technology downscalingSofics
2012 Taiwan ESD and reliability conference
Over a decade the technology is decreased from 0.18um to below 28nm, which affects not only the technology parameters but also the ESD performance. Due to further downscaling implementation becomes more difficult to meet the normal operation requirements (area, leakage…). The most important trends are summarized in this paper.
The document summarizes research on creating stretchable and transparent electronics using silver nanowires (AgNWs). It finds that depositing AgNWs on a glass substrate and then transferring to a flexible substrate produces better results for stretchable electronics than drop casting. Films of 60 nm diameter AgNWs showed the best electrical properties including conductivity and stability when stretched. Transparency levels comparable to indium tin oxide were achieved with AgNW films of varying thickness, making AgNWs a cheaper alternative for transparent conductive coatings in flexible electronics.
Patented way to create Silicon Controlled Rectifiers in SOI technology Sofics
This paper introduces an SCR based ESD protection design for SOI technologies. It is explained how efficient SCR devices can be constructed in SOI. These devices outperform MOS devices by about 4 times.
Experimental data from 65nm and 130nm SOI is presented to support this.
This document provides information on the E2FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland from CMP Products, including:
- It is certified for use in hazardous areas with lead covered or lead sheathed cables in Zone 1, Zone 2, Zone 21 and Zone 22.
- It provides flameproof and gas tight seals and allows for mechanical cable retention, earth continuity and testing of seal effectiveness.
- Technical data and specifications are provided including operating temperature range, ingress protection rating, material options and available sizes.
This document provides information on insulating sticks used for maneuvering detectors and short-circuiting and earthing systems for high voltage lines and switchgear equipment. It describes a range of insulating stick sets in various lengths from 2 to 6 meters that are made up of basic, intermediate, and terminal elements. The document lists technical specifications like material composition, weight, length, and standards compliance for each reference stick set.
The Phoenix Cable Clamp datasheet summarizes fire resistance testing and specifications for various cable clamp models. Short circuit testing was completed successfully in accordance with IEC 61914:2009. The cable clamps are manufactured from 316L Stainless Steel and comply with fire resistance standards BS 8491:2008 and BS 5839-1: 2002. Dimensions, weight, cable diameter ranges and fixing holes are provided for each model number.
This document describes the fabrication and characterization of vertically stacked silicon nanowire field effect transistors for biosensing applications. A process using BOSCH etching and sacrificial oxidation is developed to create arrays of vertically stacked silicon nanowires with diameters less than 40 nm, lengths over 1 micron, and densities up to 10 nanowires per micron. The nanowires are electrically characterized in dry and liquid conditions, showing good electrostatic control in liquid with subthreshold swings of 100 mV/decade and on-currents over 2 mA/micron. The vertically stacked nanowire design and fabrication process aim to increase the sensitivity of field effect transistor biosensors.
This document provides information on the E2FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland from CMP Products, including:
- It is certified for use in hazardous areas with lead covered or lead sheathed cables in Zone 1, Zone 2, Zone 21 and Zone 22.
- It provides flameproof and gas tight seals and allows for mechanical cable retention, earth continuity and testing of seal effectiveness.
- Technical data and specifications are provided including operating temperature range, ingress protection rating, material options and available sizes.
2012 The impact of a decade of Technology downscalingSofics
2012 Taiwan ESD and reliability conference
Over a decade the technology is decreased from 0.18um to below 28nm, which affects not only the technology parameters but also the ESD performance. Due to further downscaling implementation becomes more difficult to meet the normal operation requirements (area, leakage…). The most important trends are summarized in this paper.
The document summarizes research on creating stretchable and transparent electronics using silver nanowires (AgNWs). It finds that depositing AgNWs on a glass substrate and then transferring to a flexible substrate produces better results for stretchable electronics than drop casting. Films of 60 nm diameter AgNWs showed the best electrical properties including conductivity and stability when stretched. Transparency levels comparable to indium tin oxide were achieved with AgNW films of varying thickness, making AgNWs a cheaper alternative for transparent conductive coatings in flexible electronics.
Patented way to create Silicon Controlled Rectifiers in SOI technology Sofics
This paper introduces an SCR based ESD protection design for SOI technologies. It is explained how efficient SCR devices can be constructed in SOI. These devices outperform MOS devices by about 4 times.
Experimental data from 65nm and 130nm SOI is presented to support this.
This document provides information on the E2FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland from CMP Products, including:
- It is certified for use in hazardous areas with lead covered or lead sheathed cables in Zone 1, Zone 2, Zone 21 and Zone 22.
- It provides flameproof and gas tight seals and allows for mechanical cable retention, earth continuity and testing of seal effectiveness.
- Technical data and specifications are provided including operating temperature range, ingress protection rating, material options and available sizes.
This document provides information on insulating sticks used for maneuvering detectors and short-circuiting and earthing systems for high voltage lines and switchgear equipment. It describes a range of insulating stick sets in various lengths from 2 to 6 meters that are made up of basic, intermediate, and terminal elements. The document lists technical specifications like material composition, weight, length, and standards compliance for each reference stick set.
The Phoenix Cable Clamp datasheet summarizes fire resistance testing and specifications for various cable clamp models. Short circuit testing was completed successfully in accordance with IEC 61914:2009. The cable clamps are manufactured from 316L Stainless Steel and comply with fire resistance standards BS 8491:2008 and BS 5839-1: 2002. Dimensions, weight, cable diameter ranges and fixing holes are provided for each model number.
This document describes the fabrication and characterization of vertically stacked silicon nanowire field effect transistors for biosensing applications. A process using BOSCH etching and sacrificial oxidation is developed to create arrays of vertically stacked silicon nanowires with diameters less than 40 nm, lengths over 1 micron, and densities up to 10 nanowires per micron. The nanowires are electrically characterized in dry and liquid conditions, showing good electrostatic control in liquid with subthreshold swings of 100 mV/decade and on-currents over 2 mA/micron. The vertically stacked nanowire design and fabrication process aim to increase the sensitivity of field effect transistor biosensors.
This document provides information on the E2FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland from CMP Products, including:
- It is certified for use in hazardous areas with lead covered or lead sheathed cables in Zone 1, Zone 2, Zone 21 and Zone 22.
- It provides flameproof and gas tight seals and allows for mechanical cable retention, earth continuity and testing of seal effectiveness.
- Technical data and specifications are provided including operating temperature range, ingress protection rating, material options and available sizes.
This document provides information on insulating sticks and telescopic sticks for use in medium voltage substations and for short-circuiting and earthing systems. It includes specifications for various stick models ranging from 36mm to 41mm in diameter and lengths from 1.1m to 3m. Safety features described include lockable buttons, isolating skirts and impact resistant materials. Application notes indicate the sticks are suitable for both dry and wet conditions. The document also lists optional accessories like wall mounts and carrying bags.
This document provides information on the CMP E1FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland. It is a triple certified cable gland that provides flameproof, increased safety and restricted breathing protection for use in hazardous areas. The cable gland allows mechanical cable retention and earth continuity via the cable armor termination. It has separate mechanisms for the inner seal and armor clamping that provide control over pressure application. The cable gland is suitable for zone 1, 2, 21 and 22 hazardous areas and complies with various international standards.
This document provides installation instructions for heatshrink termination of 3 core polymeric cables between 7.2kV and 36kV. It describes preparing the cable by removing the outer sheath and screen layers. It then details applying stress control tape and tubes, installing lugs and a breakout boot, and applying an anti-track tube. It provides requirements for indoor terminations including separation distances and positioning cores. It also describes installing rain sheds for outdoor terminations and notes on minimum bending radii during installation.
This document provides specifications for a thin, low-profile 2.0mm pitch connector that is 8.0mm in height and 4.5mm in width. It lists key features such as being compact, highly reliable, and low cost. It then provides detailed specifications for the connector including its current rating, voltage rating, temperature range, contact resistance, insulation resistance, and applicable wire sizes. Dimensional drawings and specifications are given for various models of the connector.
High Voltage Cable Terminations (SWA) with CMP Zen Insulated Cable Glands & Cast Integral Earth Lug
CMP Zen Glands - Protect Against Short Circuit Earth Fault Currents
CMP Zen A324 Insulated Aluminium Cable Glands with Cast Integral Earth Lug (Supply)
CMP A324 Zen insulated aluminium cable glands are suitable for the cable termination of all low voltage and high voltage aluminium wire armoured (AWA) cables, indoor and outdoor with IP66 seal - CMP A324 Zen insulated aluminium cable glands feature CMP Cast Integral Earth Lug (CIEL) allowing the zoning of earth connections for earthed neutral systems.
CMP Zen Insulated Cable Glands - High Voltage Cable Termination with Brass or Aluminium Cable Glands
In the power generation industry unless special measures are taken to both segregate LV-HV cables in accordance with wiring regulations, and also isolate the metallic cable armour from running in continuous contact throughout the whole of the earthing system, interference or electrical noise would spread throughout the plant. CMP Zen Insulated cable gland system allows cables to be earthed at one end only - single point earthing - and insulated at the field end. Insulated Zen cable glands are available to ensure that no contact is made between the earth circuit carried through the cable armour and the low-high voltage electrical enclosure which the cable enters. CMP Zen Insulated cable glands permit electrical design engineers to implement safe earthing systems to deal with :
*Cross Talk Noise Reduction
*Electrical Separation of Main Earths
*Earth Fault Segregation
*Fault Current Reduction with Series Cable Resistance
*Electrical Noise Reduction in Instrument Cables
*Circulating Current Production in Single or 3 Core High Voltage Cables
CMP Zen Insulated Cable Glands - CMP A324 & A348
CMP Zen Insulated cable glands are suitable for use with all aluminium wire armoured (AWA) cables providing an IP66 environmental seal on the cable outer sheath. CMP A324 Zen glands feature Cast Integral Earth Lug (CIEL) suitable for high voltage power cable systems where a high level of protection against fault currents is required - CMP's unique cable glanding concept effectively insulates the gland and cable armour from the electrical equipment eliminating circulating currents. CMP Zen A324 cable gland is usually installed at the supply end of the cable and Zen A348 cable gland at the load end - suitable for 3.3kV, 6.6kV, 11kV and 33kV single core AWA high voltage power cable glanding.
The document provides technical specifications for the E1FX Tri-Star Flameproof, Increased Safety and Restricted Breathing cable gland, including its certifications, materials, sizing options, and compliance with various international standards for use in hazardous areas. It also includes ordering information and references to the company's other hazardous area products such as cable joints, terminations, and other accessories.
This document provides information about cognitive training. It begins with an overview of the CHC model of cognitive strengths, including comprehension, long-term retrieval, visual-spatial thinking, auditory processing, fluid reasoning, processing speed, short term memory, executive function, and more. It then outlines the agenda for an upcoming cognitive training session, which will cover results, applications, caveats, methodology, and future directions. The document provides details on identifying appropriate cognitive training candidates and assessing cognitive synergy versus friction. It discusses establishing ground rules for students, parents, and brain coaches and managing motivation. The overall aim is to target malleable cognitive skills through cognitive workouts to improve academic well-being in the long run.
El documento proporciona una lista de negocios y servicios en una ciudad, incluyendo talleres mecánicos, clínicas dentales, estudios contables, bancos, restaurantes, hoteles y más. La variedad de empresas cubre sectores como la salud, alimentación, finanzas, turismo, construcción, entretenimiento y otros.
The document outlines a seminar on solution marketing that was presented by Tina Flodin. The seminar covered topics such as segmentation, defining solutions, value proposition design, benefits identification, solution marketing, sales tools, and marketing communications planning. The objective of the seminar was to review solution marketing from both strategic and tactical perspectives and discuss practical examples.
WiMAX es una tecnología inalámbrica de banda ancha que permite la transmisión de datos usando ondas de radio. El estándar IEEE 802.16 define el protocolo WiMAX. Bucaramanga, Colombia fue una de las primeras ciudades en implementar una red WiMAX que cubría toda la ciudad. El estándar 802.16e define la versión móvil de WiMAX que permite la movilidad a alta velocidad.
This document summarizes a strata insurance policy. It provides coverage for accidental loss or damage to insured property under Policy 1. It also includes additional benefits such as temporary accommodation costs and loss of rent. However, certain losses are not covered, such as damage from flood or storm surge. The policy also provides liability coverage, voluntary worker benefits, and other optional specialty covers. It is important to carefully review all policy details, coverages, exclusions, and how claims will be settled.
Este documento describe cómo comparar a uno mismo con un amigo usando las expresiones "más...que", "menos...que" y "tan...como". Proporciona ejemplos de cómo usar estas expresiones para describir diferencias en la personalidad, apariencia y otras cualidades entre dos personas.
Este documento presenta una guía para abrir una tienda online en Chile. Explica que el comercio electrónico ha crecido significativamente en los últimos años y seguirá creciendo, especialmente a través del comercio móvil. Luego, detalla los pasos clave para establecer una tienda online exitosa, incluyendo elegir un modelo de negocio, diseñar la tienda, implementar sistemas de pago, cumplir con regulaciones legales, crear estrategias de marketing digital y medir el rendimiento. El objetivo general es brindar una introducción
La Unión Europea ha acordado un paquete de sanciones contra Rusia por su invasión de Ucrania. Las sanciones incluyen restricciones a las importaciones de productos rusos de alta tecnología y a las exportaciones de bienes de lujo a Rusia. Además, se congelarán los activos de varios oligarcas rusos y se prohibirá el acceso de los bancos rusos a los mercados financieros de la UE.
Este documento apresenta um resumo da vida e do pensamento de sete pioneiros do serviço social: Juan Luiz Vives, Vicente de Paulo, Canon Samuel Barnett, Jane Addams, Mary Richmond, Mary Parker Follett e Rene Sand. Estes indivíduos introduziram novas ideias e conceitos que influenciaram o desenvolvimento do serviço social.
1) El documento describe la sexta edad de la iglesia, conocida como la Edad de Filadelfia, que se cree comenzó en 1750 y duró hasta alrededor de 1900 liderada por Juan Wesley.
2) La edad se caracterizó por el amor fraternal, las misiones y las puertas abiertas, y su recompensa fue ser hecho una columna en el templo de Dios.
3) El documento analiza las características de esta y otras edades de la iglesia según el libro de Apocalipsis
This document provides information on insulating sticks and telescopic sticks for use in medium voltage substations and for short-circuiting and earthing systems. It includes specifications for various stick models ranging from 36mm to 41mm in diameter and lengths from 1.1m to 3m. Safety features described include lockable buttons, isolating skirts and impact resistant materials. Application notes indicate the sticks are suitable for both dry and wet conditions. The document also lists optional accessories like wall mounts and carrying bags.
This document provides information on the CMP E1FW Tri-Star Flameproof Ex d, Increased Safety Ex e and Restricted Breathing Ex nR Cable Gland. It is a triple certified cable gland that provides flameproof, increased safety and restricted breathing protection for use in hazardous areas. The cable gland allows mechanical cable retention and earth continuity via the cable armor termination. It has separate mechanisms for the inner seal and armor clamping that provide control over pressure application. The cable gland is suitable for zone 1, 2, 21 and 22 hazardous areas and complies with various international standards.
This document provides installation instructions for heatshrink termination of 3 core polymeric cables between 7.2kV and 36kV. It describes preparing the cable by removing the outer sheath and screen layers. It then details applying stress control tape and tubes, installing lugs and a breakout boot, and applying an anti-track tube. It provides requirements for indoor terminations including separation distances and positioning cores. It also describes installing rain sheds for outdoor terminations and notes on minimum bending radii during installation.
This document provides specifications for a thin, low-profile 2.0mm pitch connector that is 8.0mm in height and 4.5mm in width. It lists key features such as being compact, highly reliable, and low cost. It then provides detailed specifications for the connector including its current rating, voltage rating, temperature range, contact resistance, insulation resistance, and applicable wire sizes. Dimensional drawings and specifications are given for various models of the connector.
High Voltage Cable Terminations (SWA) with CMP Zen Insulated Cable Glands & Cast Integral Earth Lug
CMP Zen Glands - Protect Against Short Circuit Earth Fault Currents
CMP Zen A324 Insulated Aluminium Cable Glands with Cast Integral Earth Lug (Supply)
CMP A324 Zen insulated aluminium cable glands are suitable for the cable termination of all low voltage and high voltage aluminium wire armoured (AWA) cables, indoor and outdoor with IP66 seal - CMP A324 Zen insulated aluminium cable glands feature CMP Cast Integral Earth Lug (CIEL) allowing the zoning of earth connections for earthed neutral systems.
CMP Zen Insulated Cable Glands - High Voltage Cable Termination with Brass or Aluminium Cable Glands
In the power generation industry unless special measures are taken to both segregate LV-HV cables in accordance with wiring regulations, and also isolate the metallic cable armour from running in continuous contact throughout the whole of the earthing system, interference or electrical noise would spread throughout the plant. CMP Zen Insulated cable gland system allows cables to be earthed at one end only - single point earthing - and insulated at the field end. Insulated Zen cable glands are available to ensure that no contact is made between the earth circuit carried through the cable armour and the low-high voltage electrical enclosure which the cable enters. CMP Zen Insulated cable glands permit electrical design engineers to implement safe earthing systems to deal with :
*Cross Talk Noise Reduction
*Electrical Separation of Main Earths
*Earth Fault Segregation
*Fault Current Reduction with Series Cable Resistance
*Electrical Noise Reduction in Instrument Cables
*Circulating Current Production in Single or 3 Core High Voltage Cables
CMP Zen Insulated Cable Glands - CMP A324 & A348
CMP Zen Insulated cable glands are suitable for use with all aluminium wire armoured (AWA) cables providing an IP66 environmental seal on the cable outer sheath. CMP A324 Zen glands feature Cast Integral Earth Lug (CIEL) suitable for high voltage power cable systems where a high level of protection against fault currents is required - CMP's unique cable glanding concept effectively insulates the gland and cable armour from the electrical equipment eliminating circulating currents. CMP Zen A324 cable gland is usually installed at the supply end of the cable and Zen A348 cable gland at the load end - suitable for 3.3kV, 6.6kV, 11kV and 33kV single core AWA high voltage power cable glanding.
The document provides technical specifications for the E1FX Tri-Star Flameproof, Increased Safety and Restricted Breathing cable gland, including its certifications, materials, sizing options, and compliance with various international standards for use in hazardous areas. It also includes ordering information and references to the company's other hazardous area products such as cable joints, terminations, and other accessories.
This document provides information about cognitive training. It begins with an overview of the CHC model of cognitive strengths, including comprehension, long-term retrieval, visual-spatial thinking, auditory processing, fluid reasoning, processing speed, short term memory, executive function, and more. It then outlines the agenda for an upcoming cognitive training session, which will cover results, applications, caveats, methodology, and future directions. The document provides details on identifying appropriate cognitive training candidates and assessing cognitive synergy versus friction. It discusses establishing ground rules for students, parents, and brain coaches and managing motivation. The overall aim is to target malleable cognitive skills through cognitive workouts to improve academic well-being in the long run.
El documento proporciona una lista de negocios y servicios en una ciudad, incluyendo talleres mecánicos, clínicas dentales, estudios contables, bancos, restaurantes, hoteles y más. La variedad de empresas cubre sectores como la salud, alimentación, finanzas, turismo, construcción, entretenimiento y otros.
The document outlines a seminar on solution marketing that was presented by Tina Flodin. The seminar covered topics such as segmentation, defining solutions, value proposition design, benefits identification, solution marketing, sales tools, and marketing communications planning. The objective of the seminar was to review solution marketing from both strategic and tactical perspectives and discuss practical examples.
WiMAX es una tecnología inalámbrica de banda ancha que permite la transmisión de datos usando ondas de radio. El estándar IEEE 802.16 define el protocolo WiMAX. Bucaramanga, Colombia fue una de las primeras ciudades en implementar una red WiMAX que cubría toda la ciudad. El estándar 802.16e define la versión móvil de WiMAX que permite la movilidad a alta velocidad.
This document summarizes a strata insurance policy. It provides coverage for accidental loss or damage to insured property under Policy 1. It also includes additional benefits such as temporary accommodation costs and loss of rent. However, certain losses are not covered, such as damage from flood or storm surge. The policy also provides liability coverage, voluntary worker benefits, and other optional specialty covers. It is important to carefully review all policy details, coverages, exclusions, and how claims will be settled.
Este documento describe cómo comparar a uno mismo con un amigo usando las expresiones "más...que", "menos...que" y "tan...como". Proporciona ejemplos de cómo usar estas expresiones para describir diferencias en la personalidad, apariencia y otras cualidades entre dos personas.
Este documento presenta una guía para abrir una tienda online en Chile. Explica que el comercio electrónico ha crecido significativamente en los últimos años y seguirá creciendo, especialmente a través del comercio móvil. Luego, detalla los pasos clave para establecer una tienda online exitosa, incluyendo elegir un modelo de negocio, diseñar la tienda, implementar sistemas de pago, cumplir con regulaciones legales, crear estrategias de marketing digital y medir el rendimiento. El objetivo general es brindar una introducción
La Unión Europea ha acordado un paquete de sanciones contra Rusia por su invasión de Ucrania. Las sanciones incluyen restricciones a las importaciones de productos rusos de alta tecnología y a las exportaciones de bienes de lujo a Rusia. Además, se congelarán los activos de varios oligarcas rusos y se prohibirá el acceso de los bancos rusos a los mercados financieros de la UE.
Este documento apresenta um resumo da vida e do pensamento de sete pioneiros do serviço social: Juan Luiz Vives, Vicente de Paulo, Canon Samuel Barnett, Jane Addams, Mary Richmond, Mary Parker Follett e Rene Sand. Estes indivíduos introduziram novas ideias e conceitos que influenciaram o desenvolvimento do serviço social.
1) El documento describe la sexta edad de la iglesia, conocida como la Edad de Filadelfia, que se cree comenzó en 1750 y duró hasta alrededor de 1900 liderada por Juan Wesley.
2) La edad se caracterizó por el amor fraternal, las misiones y las puertas abiertas, y su recompensa fue ser hecho una columna en el templo de Dios.
3) El documento analiza las características de esta y otras edades de la iglesia según el libro de Apocalipsis
Concursos de empresas en España en enero de 2016INFORMA D&B
Este documento resume los datos de concursos y disoluciones de empresas en España en enero de 2016. Se registraron 365 concursos, un 9.2% menos que en enero de 2015. Hubo 3,180 disoluciones, un aumento del 5.12%. Cataluña, Madrid y la Comunidad Valenciana concentraron la mayoría de los concursos. La construcción, el comercio y los servicios empresariales fueron los sectores con más concursos.
Este documento describe los servicios de seguridad y actividades ofrecidos por una agencia de viajes de quinceañeras. La agencia ha estado operando durante más de 22 años y ofrece guías especializados, seguro médico, seguro hotelero y orientación de seguridad. Entre las actividades descritas se incluyen una fiesta de gala con temática egipcia en Cali, una excursión de una semana en crucero que visita varios destinos en el Caribe y Centroamérica, y numerosos eventos y entretenimiento a bordo del crucero.
IT.integro is the leading Microsoft Dynamics NAV partner in Poland. IT.integro is a team of professionals who are passionate about their work and create the company’s success. Owing to their knowledge and involvement, IT.integro has become a synonym for professionalism and reliability.
Presently, we employ: 80 employees,
60 consultants, 9 consultant teams, 8 Help Desk consultants,4 technical consultants.
We work to ensure the success of your company!
Nutrición comunitaria II: planificación de la evaluación nutricionalgabriela garcia
Este documento presenta los aspectos fundamentales de la planificación de una encuesta nutricional en una comunidad. Explica los pasos preliminares como definir los objetivos y el área de estudio, la selección de métodos y equipos, y el diseño de un protocolo. También describe técnicas de recolección de datos como entrevistas estructuradas, así como factores a considerar en la aplicación y manejo de las entrevistas. El objetivo final es contribuir a la solución de problemas nutricionales de la comunidad mediante la recolección y aná
A NOVEL POWER REDUCTION TECHNIQUE FOR DUAL-THRESHOLD DOMINO LOGIC IN SUB-65NM...VLSICS Design
A novel technique for dual- threshold is proposed and examined with inputs and clock signals combinationin 65nm dual- threshold footerless domino circuit for reduced leakage current. In this technique a p-type and an n-type leakage controlled transistor (LCTs) are introduced between the pull-up and pull-down network and the gate of one is controlled by the source of the other. A high-threshold transistor is used in the input for reducing gate oxide leakage current which becomes dominant in nanometer technology. Simulations based on 65nm BISM4 model for proposed domino circuits shows that CLIL (clock low and input low) and CHIH (clock high and input high) state is ineffective for lowering leakage current. The CLIH (clock low input high) state is only effective to suppress the leakage at low and high temperatures for
wide fan-in domino circuits but for AND gate CHIL (clock high input low) state is preferred to reduce the leakage current. The proposed circuit technique for AND2, OR2, OR4 and OR8 circuits reduces the active power consumption by 39.6% to 57.9% and by 32.4% to 40.3% at low and high die temperatures respectively when compared to the standard dual-threshold voltage domino logic circuits.
Structural and Electrical Analysis of Various MOSFET DesignsIJERA Editor
Invention of Transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key to the development of nano electronics technology. This paper offers a brief review of some of the most popular MOSFET structure designs. The scaling down of planar bulk MOSFET proposed by the Moore’s Law has been saturated due to short channel effects and DIBL. Due to this alternative approaches has been considered to overcome the problems at lower node technology. SOI and FinFET technologies are promising candidates in this area.
Analog and digital circuit design in 65 nm CMOS end of the road.docxZHKhan15
This document summarizes challenges in analog and digital circuit design for 65nm CMOS technology. It discusses how leakage currents, process variability, and interconnect delays increase as technologies scale down, posing new problems. A panel of experts will discuss whether 65nm marks the "end of the road" for continued design benefits from technology scaling or if issues can be addressed.
The document discusses future prospects for Moore's Law and continuing semiconductor scaling. It notes exponential trends in integrating more functions per chip, increased performance, and reduced costs. It then summarizes the state-of-the-art in CMOS technology in 2004 and some of the physical limits facing continued scaling, such as gate delays, switching energy, and manufacturing challenges. Alternative approaches like new materials, transistor structures, and integrated functions are discussed as potential ways to continue extending Moore's Law.
vlsi qb.docx imprtant questions for all unitsnitcse
This document contains a question bank for the course EC3352: VLSI & Chip Design. It includes questions related to MOS transistor operation, CMOS logic, layout design rules, I-V characteristics, delay modeling, scaling concepts, and CMOS fabrication processes. Key topics covered are threshold voltage, body effect, latch-up, twin tub process, SOI process, Elmore delay model, logical effort, critical paths, and layout design rules such as lambda-based rules. Sample questions assess understanding of MOSFET parameters, transfer characteristics, non-ideal effects, noise margins, rise/fall times, and stick diagrams. Layout aspects include designing a 2-input NAND gate and explaining P-well and n
Design & Performance Analysis of DG-MOSFET for Reduction of Short Channel Eff...IJERA Editor
An aggressive scaling of conventional MOSFETs channel length reduces below 100nm and gate oxide thickness below 3nm to improved performance and packaging density. Due to this scaling short channel effect (SCEs) like threshold voltage, Subthreshold slope, ON current and OFF current plays a major role in determining the performance of scaled devices. The double gate (DG) MOSFETS are electro-statically superior to a single gate (SG) MOSFET and allows for additional gate length scaling. Simulation work on both devices has been carried out and presented in paper. The comparative study had been carried out for threshold voltage (VT), Subthreshold slope (Sub VT), ION and IOFF Current. It is observed that DG MOSFET provide good control on leakage current over conventional Bulk (Single Gate) MOSFET. The VT (Threshold Voltage) is 2.7 times greater than & ION of DG MOSFET is 2.2 times smaller than the conventional Bulk (Single Gate) MOSFET.
In this paper, we propose and investigate a schottky tunneling source impact ionization MOSFET (STSIMOS)
with enhanced device performance. STS-IMOS has silicide (NiSi) source to lower the breakdown
voltage of conventional impact ionization MOS (IMOS). There is cumulative effect of both impact
ionization and source induced tunneling for the current gating mechanism of the device. The silicide source
offers immensely low parasitic resistance subsequently there is an increment in voltage drop across
intrinsic region. This leads to appreciable lowering of breakdown and threshold voltage for STS-IMOS.
Hence, it demonstrates enhanced device performance over conventional IMOS. Besides this for STS-IMOS
the location of maximum electric field has shifted towards the source and now it is quite away from gateoxide. Hence, it shows high immunity against Vth fluctuations due to hot electron damage. Consequently, itis found that device reliability is also improved significantly.
Design of Nanoscale 3-T DRAM using FinFETIOSR Journals
This document describes the design of a 3-transistor (3T) dynamic random access memory (DRAM) cell using both CMOS and FinFET technologies at the 32nm node. Simulation results show that the FinFET-based DRAM cell has lower average power (9.5136uW vs 10.869uW), lower power dissipation (144.7353uW vs 235.2313uW), and much lower leakage power (2.4303nW vs 1.8781uW) compared to the CMOS-based cell. FinFET devices are able to better control short channel effects at small scales compared to planar CMOS, enabling lower power DRAM designs. The document provides
This document discusses surround gate MOSFETs as an approach to reduce short channel effects in transistors. It begins with an overview of MOSFET operation and Moore's Law. It then discusses the motivation to find alternatives to planar transistors as scaling limits are approached. Short channel effects in bulk MOSFETs are introduced as a major barrier to scaling. The document reviews SOI and multi-gate transistor technologies, such as double gate, tri-gate, and gate-all-around designs, as ways to better control the channel and reduce short channel effects. A new dual-material surround gate structure is proposed and its potential to further suppress short channel effects through gate material engineering is explained. Two-dimensional modeling of the new structure
The document discusses CMOS VLSI design technology and future trends. It provides an overview of CMOS technology and basic MOSFET operation. It then discusses how nanotechnology and integrated tri-gate transistors can help address limitations of CMOS scaling by reducing feature sizes and parasitic leakage. The document concludes that continued CMOS scaling will eventually be limited and alternatives like nanotechnology may be needed to retain device characteristics at smaller sizes.
This document summarizes the evolution of LDMOS transistor technology for S-band radar applications over the last decade. Key improvements include a doubling of power density at 3.6 GHz to over 1 W/mm, and an increase in gain from 7 dB to 14 dB. The latest generation LDMOS devices outperform bipolar transistors at S-band frequencies, with gains over 5 dB higher and efficiencies 5-10% greater. 100W and 120W microwave products in the S-band demonstrate state-of-the-art performance with gains of 11-12 dB and efficiencies near 50%.
High Performance and Low power VLSI CMOS Circuit Designs using ONOFIC Approach IJERA Editor
Leakage power dissipation a major concern for scaling down portable devices. Improving high performance with reduced power consumption and chip area are the main constraint for designing VLSI CMOS circuits. In this paper, high performance and low power ONOFIC approach for VLSI CMOS circuits have been implemented. Mostly the concentrated part in deep sub micron regime is the power dissipation. Many techniques have been proposed for reducing leakage current in deep sub micron but with some limitations they are not suitable for actual requirements. Here we discussed two techniques named LECTOR & ONOFIC. The proposed On/Off Logic (ONOFIC) serves the needs for deep sub micron with its reduced power dissipation and increased performance in VLSI circuits. Thus the proposed ONOFIC approach results have been compared with the LECTOR technique and observed that the proposed technique improves the performance and reduce the power dissipation.
Microelectronic technology
This report briefly discusses the need for Metal-Oxide-Semiconductor Field Effect Transistors (MOSFETs), their structure and principle of operation. Then it details the fabrication and characterization of the MOSFETs fabricated at the microelectronic lab at University of Malaya
shows the simulation and analysis of a MOSFET device using the MOSFet tool. Several powerful analytic features of this tool are demonstrated, including the following:
calculation of Id-Vg curves
potential contour plots along the device at equilibrium and at the final applied bias
electron density contour plots along the device at equilibrium and at the final applied bias
spatial doping profile along the device
1D spatial potential profile along the device
Design and Analysis of Power and Variability Aware Digital Summing CircuitIDES Editor
This document analyzes and compares different 1-bit digital summing circuit topologies in terms of their robustness against process, voltage, and temperature variations at the 22nm technology node. It finds that the transmission gate-based topology is the most robust, with the tightest spread in propagation delay, power dissipation, and energy-delay product. It then proposes a transmission gate-based digital summing circuit implemented using carbon nanotube field-effect transistors, which offers even greater robustness against PVT variations compared to an implementation using traditional MOSFETs.
1) The document discusses SOI-CMOS device technology, which uses a silicon-on-insulator structure to create transistors on a thin silicon film layer separated from the substrate by an insulating layer. This structure offers advantages like lower power consumption and higher speeds.
2) It summarizes the development of a 0.2 micrometer SOI-CMOS process at Oki, including a 50nm thin silicon film layer and cobalt silicide to reduce resistance. Tests showed improved speed and lower voltage operation compared to bulk CMOS.
3) Potential applications discussed include low power digital devices, radio frequency circuits where reduced capacitance enables better high-frequency performance, and mixed-signal chips where substrate isolation reduces interference.
This presentation summarizes research on junctionless transistors and their applications. It introduces junctionless transistors as an alternative to traditional junction transistors that can help address challenges from Moore's Law like power consumption and short channel effects. The presentation describes the structure and operation of junctionless transistors. It then compares junctionless transistors to junction transistors, highlighting advantages like lower electric fields, easier fabrication, and reduced short channel effects. Several applications are discussed, with a focus on using junctionless transistors in DRAM to improve retention time and sense margin. Results are presented on optimizing the performance of double-gate junctionless transistors by varying length, thickness, and doping concentration. The conclusion discusses the near ideal subthreshold slope and potential for digital applications. Future
Investigation and design of ion-implanted MOSFET based on (18 nm) channel lengthTELKOMNIKA JOURNAL
The aim of this study is to invistgate the characteristics of Si-MOSFET with 18 nm length of ion implemented channel. Technology computer aided design (TCAD) tool from Silvaco was used to simulate the MOSFET’s designed structure in this research. The results indicate that the MOSFET with 18 nm channel length has cut-off frequency of 548 GHz and transconductance of 967 μS, which are the most important factors in calculating the efficiency and improving the performance of the device. Also, it has threshold voltage of (-0.17 V) in addition obtaining a relatively small DIBL (55.11 mV/V). The subthreshold slope was in high value of 307.5 mV/dec. and this is one of the undesirable factors for the device results by short channel effect, but it does not reduce its performance and efficiency in general.
Performance Comparison of CMOS and Finfet Based Circuits At 45nm Technology U...IJERA Editor
According to the Moore’s Law, the number of transistors in a unit chip area double every two years. But the existing technology of integrated circuit formation is posing limitations to this law. CMOS technology shows certain limitations as the device is reduced more and more in the nanometer regime out of which power dissipation is an important issue. FinFET is evolving to be a promising technology in this regard. This paper aims to analyze and compare the characteristics of CMOS and FinFET circuits at 45nm technology. Inverter circuit is implemented in order to study the basic characteristics such as voltage transfer characteristics, leakage current and power dissipation. Further the efficiency of FinFET to reduce power as compared to CMOS is proved using SRAM circuit. The results show that the average power is reduced by 92.93% in read operation and by 97.8% in write operation.
The document discusses the history and development of transistors from their invention in 1947 to modern 3D transistors. It describes how Moore's Law of transistor scaling led to the development of 3D tri-gate transistors to overcome limitations of planar transistors. The document explains how 3D transistors provide better performance than planar transistors through conducting channels on three sides of a vertical fin structure. It discusses the construction, operation, benefits and challenges of integrating 3D transistors into mainstream manufacturing.
Similaire à Patented solution to improve ESD robustness of SOI MOS transistors (20)
Optimized Local I/O ESD Protection for SerDes In Advanced SOI, BiCMOS and Fin...Sofics
Sofics presentation (B2.2) at the 1st International EOS/ESD Symposium on Design and System (IEDS). IEDS is dedicated to the fundamental understanding of issues related to electrostatic discharge on design and system and the application of this knowledge to the solution of problems.
Semiconductor companies are developing ever faster interfaces to satisfy the need for higher data throughputs. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates low-cap Analog I/Os for high speed SerDes (28Gbps to 112Gbps) circuits created in advanced BiCMOS, SOI and FinFET nodes.
Tsmc65 1v2 full local protection analog io + cdmSofics
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 5nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 4500 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPS and Bluetooth.
The Analog I/O clamp described in this document can be used for 1.2V pads in the TSMC 65nm CMOS technology. It has a full local ESD protection and integrated power clamp. The bus resistance is thus not important for IO related ESD stress.
The cell also includes a CDM secondary protection.
1.2V Analog I/O with full local ESD protection for TSMC 65nm technologySofics
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 5nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 4500 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPS and Bluetooth.
The Analog I/O clamp described in this document can be used for 1.2V pads in the TSMC 65nm CMOS technology. It has a full local ESD protection and integrated power clamp. The bus resistance is thus not important for IO related ESD stress.
1.2V Over-voltage tolerant Analog I/O for TSMC 65nm technologySofics
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 5nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 4500 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPS and Bluetooth.
The Analog I/O clamp described in this document can be used for 1.2V pads in the TSMC 65nm CMOS technology. It is over-voltage tolerant, suitable for hot-swap, cold-spare, open-drain interfaces.
1.2V Analog I/O library for TSMC 65nm technologySofics
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 5nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 4500 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPS and Bluetooth.
1.2V core power clamp for TSMC 65nm technologySofics
Sofics has verified its TakeCharge ESD protection clamps on technology nodes between 0.25um CMOS down to 5nm across various fabs and foundries. The ESD clamps are silicon and product proven in more than 4500 mass produced IC-products. The cells provide competitive advantage through improved yield, reduced silicon footprint and enable advanced multimedia and wireless interfaces like HDMI, USB 3.0, SATA, WIFI, GPS and Bluetooth.
The ESD clamp described in this document protects 1.2V core domains in TSMC 65nm CMOS technology.
2010 The Hebistor Device: Novel latch-up immune ESD Protection Clamp for High...Sofics
2010 Taiwan ESD and reliability conference
High voltage interfaces are broadly used in many IC applications like motor control, power management and conversion, LCD panel drivers and automotive systems. Because the high voltage IC's are typically used in severe applications IC designers need to protect their circuits to a steady growing list of requirements. In this paper we present an overview of the ESD, EOS and latch‐up requirements and compare the performance of different on‐chip ESD protection approaches. The paper introduces a newly developed protection device with a high holding voltage for absolute latch‐up immunity.
2011 ESD relevant issues and solutions for overvoltage tolerant, hot swap, op...Sofics
2011 Taiwan ESD and Reliability conference
The ‘Dual diode’ approach is one of the most used on-chip and off-chip concept for ESD protection of IO interfaces. It is simple to implement, smaller than any other IO/ESD concept, has a low parasitic capacitance and low leakage. However, especially the ‘diode up’, from IO-pad to VDD can create a lot of problems in the functional operation of the circuits. This paper summarizes a number of problems that are caused by the ‘diode up’, describes the differences between overvoltage tolerant, hot swap, open drain and failsafe interface concepts and provides solutions that can solve both functional operation and ESD.
2011 Protection of a 3.3V Domain and Switchable 1.8V/3.3V I/O in 40nm and 28n...Sofics
This document summarizes a conference paper describing protection circuits for a 3.3V power domain and switchable 1.8V/3.3V I/O in 40nm and 28nm processes using only 1.8V transistors. It describes the issues, solutions, and results of building protection against HBM, MM, CDM, and latch-up. Key aspects included a DTSCR power clamp, ESD-ON-SCR local I/O clamps, and test results showing protection levels exceeding specifications of 2kV HBM and 200V MM in 40nm. The same approach was then ported to a 28nm process with I/O circuits tested on a 28nm MPW test chip.
2011 Latch-up immune ESD Protection Clamp for High Voltage optimized on TSMC ...Sofics
2011 TSMC open innovation Platform
Applications like motor control, power management and conversion, LCD panel drivers and automotive systems require IC interfaces that can tolerate and drive high voltages (10V to 100V). Moreover, in most of these applications the ICs are operated in harsh environments (high temperature, high current/voltage transient disturbance), close to the boundaries of the IC technology. Further, to reduce the Bill of Materials (BOM) system makers are constantly shifting requirements that were once a system/PCB issue to the IC makers. IC makers designing high voltage applications need robust and reliable technology that can meet a growing set of requirements.
Based on TSMC’s comprehensive BCD technology platform in 0.25um and 0.18um, Sofics has developed novel EOS/ESD protection devices that can solve those needs.
This paper first presents an overview of the EOS, ESD, latch-up and other requirements that IC makers face today. Secondly the TSMC BCD technology that was used as the verification platform is touched upon. Finally analysis results and on-going product implementations are shown on 0.25um BCD and 0.18um BCD technology. The unique BCD ESD solutions are available for TSMC foundry customers at a fraction of the development cost.
2012 Protection strategy for EOS (IEC 61000-4-5)Sofics
2012 Taiwan ESD and reliability conference
The standard IEC 61000-4-5 is used to characterize IC designs for EOS robustness. Each chip should achieve a minimum level of protection to withstand against EOS. Based on Long TLP and simulation, a strategy is developed to handle this requirement. The methodology has been applied for a T-con product in 130nm CMOS.
2012 Unexpected failures due to dynamic avalanching caused by bipolar ESD stressSofics
2012 Taiwan ESD and reliability conference
The bipolar nature of ESD pulses such as MM introduces failure mechanisms that cannot be reproduced by TLP/HBM. A lowered breakdown voltage due to dynamic avalanching was observed. The key issue is that carriers injected during the first swing remain in the device after the current switches polarity. A case study for high-voltage diodes is presented.
2019 Local I/O ESD protection for 28Gbps to 112Gbps SerDes interfaces in adva...Sofics
2019 Taiwan ESD and reliability conference
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
2017 EOS/ESD symposium
This paper presents a novel approach to reduce the parasitic capacitive loading of RF and high speed digital interfaces by up to 35%. Unlike in the classic dual diode protection, both junctions connected to the pad are used in every stress combination.
ESD protection with ultra-low parasitic capacitance for high bandwidth commun...Sofics
The ever increasing demand to transfer data pushes the semiconductor industry to develop faster wired, wireless or optical interfaces (>20 Gbps).
To meet those speeds, chip designers need to limit the parasitic capacitance of the on-chip ESD protection clamps. When traditional ESD concepts are not good enough, they need special analog I/O circuits like the proprietary solutions made available by Sofics.
Sofics is a foundry independent semiconductor IP company providing custom, specialty analog I/Os and on-chip ESD protection.
Our technology is characterized on 10 foundries including advanced nodes at TSMC, UMC, GF, TowerJazz. Our silicon design and circuit solutions are complementary to the public and foundry solutions
Sofics provides ESD protection solutions that have been proven in over 4500 mass-produced IC designs. Their broad solution spectrum offers options for different power domains and interface types. Beyond standard performance, their technologies can boost competitive advantage with features like ultra-low parasitic capacitance for high-speed interfaces up to 112Gbps and high ESD robustness up to 8kV HBM. Sofics also supports next-generation FinFET designs with silicon-proven Analog I/O and ESD clamps for advanced process nodes including 16nm, 12nm, and 7nm.
Design of ESD protection for high-speed interfacesSofics
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
2020 04 sofics low cap esd
Local I/O ESD protection for 28Gbps to 112Gbps SerDes interfaces in advanced ...Sofics
Presentation at the Taiwan ESD and reliability conference 2019
Semiconductor companies are developing ever faster wireless, wired and optical interfaces to satisfy the need for higher data throughputs. They rely on BiCMOS, advanced CMOS and FinFET nodes with ESD-sensitive circuits. However, the parasitic capacitance of the traditional ESD solutions limits the signal frequency. This paper demonstrates small area and low-cap Analog I/Os used in TSMC 28nm CMOS and TSMC 16nm, 12nm, 7nm FinFET technologies for high speed SerDes (28Gbps to 112Gbps) circuits. Parasitic capacitance of the ESD solutions is reduced below 100fF and for some silicon photonics applications even below 20fF.
Optimization of On-chip ESD protection with ultra-low parasitic capacitance t...Sofics
Optimization of On-chip ESD protection with ultra-low parasitic capacitance through Calibre PEX
Johan Van der Borght presented at the 2017 User-to-User conference of Mentor Graphics in Munich.
He talked about our approach to deliver ESD protection with ultra-low parasitic capacitance
Redefining brain tumor segmentation: a cutting-edge convolutional neural netw...IJECEIAES
Medical image analysis has witnessed significant advancements with deep learning techniques. In the domain of brain tumor segmentation, the ability to
precisely delineate tumor boundaries from magnetic resonance imaging (MRI)
scans holds profound implications for diagnosis. This study presents an ensemble convolutional neural network (CNN) with transfer learning, integrating
the state-of-the-art Deeplabv3+ architecture with the ResNet18 backbone. The
model is rigorously trained and evaluated, exhibiting remarkable performance
metrics, including an impressive global accuracy of 99.286%, a high-class accuracy of 82.191%, a mean intersection over union (IoU) of 79.900%, a weighted
IoU of 98.620%, and a Boundary F1 (BF) score of 83.303%. Notably, a detailed comparative analysis with existing methods showcases the superiority of
our proposed model. These findings underscore the model’s competence in precise brain tumor localization, underscoring its potential to revolutionize medical
image analysis and enhance healthcare outcomes. This research paves the way
for future exploration and optimization of advanced CNN models in medical
imaging, emphasizing addressing false positives and resource efficiency.
Introduction- e - waste – definition - sources of e-waste– hazardous substances in e-waste - effects of e-waste on environment and human health- need for e-waste management– e-waste handling rules - waste minimization techniques for managing e-waste – recycling of e-waste - disposal treatment methods of e- waste – mechanism of extraction of precious metal from leaching solution-global Scenario of E-waste – E-waste in India- case studies.
Applications of artificial Intelligence in Mechanical Engineering.pdfAtif Razi
Historically, mechanical engineering has relied heavily on human expertise and empirical methods to solve complex problems. With the introduction of computer-aided design (CAD) and finite element analysis (FEA), the field took its first steps towards digitization. These tools allowed engineers to simulate and analyze mechanical systems with greater accuracy and efficiency. However, the sheer volume of data generated by modern engineering systems and the increasing complexity of these systems have necessitated more advanced analytical tools, paving the way for AI.
AI offers the capability to process vast amounts of data, identify patterns, and make predictions with a level of speed and accuracy unattainable by traditional methods. This has profound implications for mechanical engineering, enabling more efficient design processes, predictive maintenance strategies, and optimized manufacturing operations. AI-driven tools can learn from historical data, adapt to new information, and continuously improve their performance, making them invaluable in tackling the multifaceted challenges of modern mechanical engineering.
Comparative analysis between traditional aquaponics and reconstructed aquapon...bijceesjournal
The aquaponic system of planting is a method that does not require soil usage. It is a method that only needs water, fish, lava rocks (a substitute for soil), and plants. Aquaponic systems are sustainable and environmentally friendly. Its use not only helps to plant in small spaces but also helps reduce artificial chemical use and minimizes excess water use, as aquaponics consumes 90% less water than soil-based gardening. The study applied a descriptive and experimental design to assess and compare conventional and reconstructed aquaponic methods for reproducing tomatoes. The researchers created an observation checklist to determine the significant factors of the study. The study aims to determine the significant difference between traditional aquaponics and reconstructed aquaponics systems propagating tomatoes in terms of height, weight, girth, and number of fruits. The reconstructed aquaponics system’s higher growth yield results in a much more nourished crop than the traditional aquaponics system. It is superior in its number of fruits, height, weight, and girth measurement. Moreover, the reconstructed aquaponics system is proven to eliminate all the hindrances present in the traditional aquaponics system, which are overcrowding of fish, algae growth, pest problems, contaminated water, and dead fish.
An improved modulation technique suitable for a three level flying capacitor ...IJECEIAES
This research paper introduces an innovative modulation technique for controlling a 3-level flying capacitor multilevel inverter (FCMLI), aiming to streamline the modulation process in contrast to conventional methods. The proposed
simplified modulation technique paves the way for more straightforward and
efficient control of multilevel inverters, enabling their widespread adoption and
integration into modern power electronic systems. Through the amalgamation of
sinusoidal pulse width modulation (SPWM) with a high-frequency square wave
pulse, this controlling technique attains energy equilibrium across the coupling
capacitor. The modulation scheme incorporates a simplified switching pattern
and a decreased count of voltage references, thereby simplifying the control
algorithm.
Rainfall intensity duration frequency curve statistical analysis and modeling...bijceesjournal
Using data from 41 years in Patna’ India’ the study’s goal is to analyze the trends of how often it rains on a weekly, seasonal, and annual basis (1981−2020). First, utilizing the intensity-duration-frequency (IDF) curve and the relationship by statistically analyzing rainfall’ the historical rainfall data set for Patna’ India’ during a 41 year period (1981−2020), was evaluated for its quality. Changes in the hydrologic cycle as a result of increased greenhouse gas emissions are expected to induce variations in the intensity, length, and frequency of precipitation events. One strategy to lessen vulnerability is to quantify probable changes and adapt to them. Techniques such as log-normal, normal, and Gumbel are used (EV-I). Distributions were created with durations of 1, 2, 3, 6, and 24 h and return times of 2, 5, 10, 25, and 100 years. There were also mathematical correlations discovered between rainfall and recurrence interval.
Findings: Based on findings, the Gumbel approach produced the highest intensity values, whereas the other approaches produced values that were close to each other. The data indicates that 461.9 mm of rain fell during the monsoon season’s 301st week. However, it was found that the 29th week had the greatest average rainfall, 92.6 mm. With 952.6 mm on average, the monsoon season saw the highest rainfall. Calculations revealed that the yearly rainfall averaged 1171.1 mm. Using Weibull’s method, the study was subsequently expanded to examine rainfall distribution at different recurrence intervals of 2, 5, 10, and 25 years. Rainfall and recurrence interval mathematical correlations were also developed. Further regression analysis revealed that short wave irrigation, wind direction, wind speed, pressure, relative humidity, and temperature all had a substantial influence on rainfall.
Originality and value: The results of the rainfall IDF curves can provide useful information to policymakers in making appropriate decisions in managing and minimizing floods in the study area.
Electric vehicle and photovoltaic advanced roles in enhancing the financial p...IJECEIAES
Climate change's impact on the planet forced the United Nations and governments to promote green energies and electric transportation. The deployments of photovoltaic (PV) and electric vehicle (EV) systems gained stronger momentum due to their numerous advantages over fossil fuel types. The advantages go beyond sustainability to reach financial support and stability. The work in this paper introduces the hybrid system between PV and EV to support industrial and commercial plants. This paper covers the theoretical framework of the proposed hybrid system including the required equation to complete the cost analysis when PV and EV are present. In addition, the proposed design diagram which sets the priorities and requirements of the system is presented. The proposed approach allows setup to advance their power stability, especially during power outages. The presented information supports researchers and plant owners to complete the necessary analysis while promoting the deployment of clean energy. The result of a case study that represents a dairy milk farmer supports the theoretical works and highlights its advanced benefits to existing plants. The short return on investment of the proposed approach supports the paper's novelty approach for the sustainable electrical system. In addition, the proposed system allows for an isolated power setup without the need for a transmission line which enhances the safety of the electrical network
LLM Fine Tuning with QLoRA Cassandra Lunch 4, presented by Anant
Patented solution to improve ESD robustness of SOI MOS transistors
1. Conference paper Concept for Body Coupling in SOI MOS
Transistors to Improve Multi-Finger Triggering
EOS/ESD symposium 2006
Multi‐finger SOI MOS devices exhibit a low ESD failure current, related to
the thin Si‐film and the complete isolation of the transistor body regions,
causing non ]uniform conduction in bipolar snapback mode. The
traditional layout approaches (silicide blocked junctions, increased gate
length) are compared and a novel layout concept is proposed to improve
uniform triggering. Excellent ESD performance around 3mA/um2 is
achieved for minimum dimension, fully silicided devices in a 90nm SOI
technology.
More information about ESD solutions for SOI technology
2. Concept for Body Coupling in SOI MOS Transistors
to Improve Multi-Finger Triggering
Bart Keppens, Geert Wybo, Gerd Vermont, Benjamin Van Camp
Sarnoff Europe, Brugse Baan 188A, B-8470 Gistel, Belgium,
phone: +32-59-275-915; fax: +32-59-275-916; e-mail: bkeppens@sarnoffeurope.com
Abstract: Multi-finger SOI MOS devices exhibit a low ESD failure current, related to the thin Si-film
and the complete isolation of the transistor body regions, causing non-uniform conduction in bipolar
snapback mode. The traditional layout approaches (silicide blocked junctions, increased gate length)
are compared and a novel layout concept is proposed to improve uniform triggering. Excellent ESD
performance around 3mA/um2 is achieved for minimum dimension, fully silicided devices in a 90nm
SOI technology.
I. Introduction
Recently, advanced SOI technology nodes are being
used more extensively due to a number of advantages
mainly related to the reduction of the power
consumption, smaller silicon area, shorter gate delay
and reduced parasitic junction capacitance. Moreover,
due to the completely isolated transistors, latch-up is no
longer an issue.
However, SOI technology comes also with
disadvantages such as the higher cost for the starting
material, floating body and history effects, increased
self-heating issues and a higher design complexity.
Another main disadvantage is the fact that traditional
snapback-based ESD solutions have a much reduced
(It2) failure current. This It2 reduction compared to
bulk is related to the thin silicon film and the complete
isolation of the transistors which limits the dissipation
and transfer of the generated heat.
For NMOS/PMOS transistors, the complete isolation in
SOI (BOX and STI) also limits the transfer of the base
potential between adjacent fingers. On Figure 1, the
cross section of a multi-finger NMOS device is shown
for bulk and SOI processes. Snapback operation of
ggNMOS transistors always starts in a single finger. In
the case of bulk technologies, the NPN base potential of
the triggered finger is easily transferred to the adjacent
fingers. The avalanche generated holes flow to the
closest P+ (gnd) connection, slightly forward biasing the
bulk-source junctions of the adjacent fingers. The Vt1
reduction associated with this increased base potential
enhances multi-finger triggering without the need for
ballast resistance at the drain junctions [1]. For SOI
technologies, the base regions of adjacent NPN
transistors are completely separated and the transfer of
the base potential is impossible.
N+P+ STI N+ N+ P+STIN+
source
...
shared p-substratesubstrate current substrate current
N+STI N+ N+ STIN+...
Isolated p-substrate
BOX
gnddraindrainsourcegnd
sourcedraindrainsource
...
...
Figure 1. Graphical representation of the cross section of
NMOS transistors in bulk and SOI processes. In bulk
technology, the bipolar NPN base (P-bulk) potential from
one finger can easily be transferred to the adjacent fingers
because all the NPN base regions are created in a shared
p-substrate. For thin film SOI processes, the base regions
for each of the parasitic NPN devices are completely
isolated from each other, preventing this potential
transfer.
The paper is organized as follows: Section two presents
a brief description of the technology and related design
windows for output protection. Section three discusses
the classical or traditional protection options and
presents measurements results that serve as a reference
or benchmark. Next, a layout concept is proposed to
enhance multi-finger triggering in minimum dimension,
fully silicided drivers. Layout and measurement data are
provided. Finally conclusions are given.
3. II. SOI MOS Devices
The studied advanced low leakage 90 nm Partially
Depleted (PD) SOI technology with a film thickness of
75nm features MOS transistors with 2 gate oxide
thicknesses: GOX1 (2.3nm – 1.2V) and GOX2 (7.5nm
– 3.3V). The maximum channel width is limited to
reduce the Kink effect [2]. Due to this design rule, the
NMOS fingers are divided into different segments as
shown on the layout (right) and cross section AA’
(bottom) of Figure 2. The segmentation prevents
uniform bipolar conduction across segments even inside
a single MOS finger.
0
0.1
0.2
0.3
0.4
0 0.5 1 1.5 2 2.5 3 3.5
Fully silicided 1.2V SOI MOS (90nm)
I [A]
V [V]
Segment
width =
8um
20 FINGERS
P- bulkP+ STI
BOX
STI P+ N+ P+P+N+N+
AA’
AA’
Figure 2: IV characteristic for a fully silicided GOX1
(1.2V) NMOS device. The total device width is
480um and is constructed as 20 fingers of 3 segments
of 8um each (depicted on the right).
0
0.2
0.4
0.6
0.8
1It2 [A]
Sample [#]
Figure 3: Limited statistical study of the It2 failure
current for identical fully silicided GOX1 (1.2V)
NMOS devices of 480um. A low average and
minimum performance and a large statistical
variation are shown.
All the MOS devices in this study have a total device
width of 480um, constructed as 20 fingers of 3 segments
of 8um each, as depicted on the right side of Figure 2.
Measurements have been performed using Barth 100ns
TLP systems. The last IV point in the IV plots depicts
the failure.
This paper focuses on the thin oxide NMOS output
driver device, because it represents the worst case due to
the very low trigger and holding voltage. The IV curve
for a 1.2V SOI NMOS transistor is shown on Figure 2
(left). The Vt1 of 3.4V and holding voltage of 2.8V are
much lower compared to 90nm bulk technologies as is
evident from Table 1, and from earlier publications [3,
4].
Fully
silicide
ggNMOS
Proprietary
(i.e. non-
foundry)
90nm
SOI
Foundry
90nm
BULK
Proprietary
90nm
BULK
Vt1 [V] 3.4 4.6 5.1
Vh [V] 2.8 3.5 3.5
Table 1: Comparison of GOX1 NMOS Vt1 trigger
voltage and Vh holding voltage between 90nm SOI and
BULK technologies.
Moreover, as outlined above, the It2 failure current is
very low (0.15 – 1.7 mA/um). Finally, because the Vt2
failure voltage is lower than the Vt1 trigger voltage,
uniform triggering over all fingers cannot be guaranteed
[5]. This is evident from the large statistical variation
measured and plotted on Figure 3.
III. Traditional ESD solutions
This section provides a comparison of different
protection approaches for the ESD protection of SOI
MOS output drivers. Three basic protection techniques
exist for MOS devices.
A. Self protective approach
In mature or mainstream bulk technologies, the self-
protective output drivers are still heavily used. In that
case all the ESD current is shunted by the output
drivers. Typically ballast resistance at the drain side and
inclusion of dummy fingers is required, which
drastically increases the total silicon area. This
approach is commonly used for over voltage tolerant
pins (no diode to VDD). When the self protective
approach is applied for SOI MOS, the macro ballast
resistance needs to be increased because it is less
effective due to the reduced intrinsic current capability.
The effect is slightly compensated by the smaller
difference between the Vt1 and Vh voltages.
4. One of the traditional forms of ballast resistance is the
use of silicide blocked (drain) junctions.
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0 1 2 3 4 5 6 7 8
It2[mA/um²]
DCGS [um]
0
1
2
3
4
5
It2[mA/um]
Gate not silicided
Gate silicided
Gate not silicided
Gate silicided
P- bulkN+ STI
BOX
STI N+
gate not silicided
DCGS
SB mask
P- bulkN+ STI
BOX
STI N+
gate silicided
DCGS
SB mask
Silicidation
x
Figure 4: Normalized ESD performance (It2 failure
current) per perimeter (top) and per area (bottom)
for different DCGS variations. Two types of silicide
blocked approaches are studied with the main
difference in the silicidation of the gate. 1um
presents the optimum value. All devices have a MDR
(Minimum Design Rule) gate length of 0.1um. The
‘X’ distance in the ‘gate silicided’ cross section is
0.22um.
Figure 4 presents measurement results for the TLP-It2
performance per perimeter and per area for different
DCGS (Drain Contact to Gate Spacing) variations. Two
types of silicide blocked junctions are compared: ‘Gate
not silicided’ is the oldest approach; ‘Gate silicided’ has
a ‘window’ style silicide block area at the drain. This
window style is introduced to reduce the gate resistance
(silicided gate) and to reduce the related RC delay. The
disadvantage of this second type is the inclusion of a
partly silicided drain junction close to the gate, which
has a bad effect on the failure current as is evident from
the measurement results on Figure 4.
0
0.2
0.4
0.6
0.8
1
1.2
0 1 2 3 4 5
current[A]
voltage [V]
Larger gate length
Lg = 0.4um
Fully silicided
Fully silicided
Lg = 0.1um
Silicide blocked
DCGS = 2um
Figure 5: Comparison of GOX1 NMOS variations to
improve robustness as compared to fully silicided
transistors. An increase of the gate length or
inclusion of silicide blocked drain junctions
drastically enhances the It2 failure current through
enforcing multi-finger triggering at the expense of a
higher voltage drop.
Other approaches exist to improve the robustness. For
advanced processes, the reverse poly effect [6] states
that the It2 performance is higher for devices with a
larger-then-minimal gate length. The effect is also
visible in the studied 90nm technology as is evident
from Figure 5 and Figure 6. The larger gate length
reduces the difference between the Vt1 trigger voltage
and the holding voltage and increases the Vt2 failure
voltage.
B. No ESD current through drivers
A second approach, opposite to the self protective
approach, is to prevent the ESD current flow through
the driver. In this case the ESD protection needs to limit
the voltage below the failure voltage (Vt2). The
advantage, when successful, is that the smallest size,
fully silicided transistors can be used as output drivers to
obtain the highest speed. The protection can be achieved
using the dual diode approach and an efficient power
5. protection using transient triggered active MOSFET rail
clamps [3,7] or Silicon Controlled Rectifiers [8].
0
0.5
1
1.5
2
2.5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0
0.5
1
1.5
2
2.5
It2[mA/um]
Lgate [um]
It2[mA/um2]
It2 per perimeter
It2 per area
Figure 6: Normalized ESD performance (It2) per
perimeter and per area for different gate length
variations for fully silicided devices. The reverse poly
effect is clearly visible through the much reduced
ESD performance for the minimum gate length
devices.
Because the Vt1, Vh and Vt2 of the to-be-protected fully
silicided drivers is a lot lower in SOI, the total voltage
drop over the power bus (Vdd or Vss), power clamp and
diode needs to be watched carefully in such a protection
scheme. Using the data from Table 1, it is obvious that
the maximum voltage in the design window is extremely
low. Besides selecting a low Vt1 triggered power
protection, a low ohmic diode is required. To limit the
total voltage drop over the diodes, gated diodes, also
known as lubistors, introduced firstly by Oomura [9] can
be used.
Another method uses a parallel local protection element
placed at the IO. This way the influence from the bus
resistance is taken out. SCR based clamps [8,10,11] are
all viable candidates.
C. Limited ESD current through drivers
A third option is to add a current limiting series
resistance. When a small output series resistance (~5-10
Ohm) is tolerated, the ESD current through the driver
can be limited while the maximum allowable voltage at
the pad is increased. In this case, the transistors still
require some form of ballasting but the total area is
limited. A detailed summary of the different options for
this method is provided in [12].
The selection of the optimal solution depends on factors
such as bus resistance, ESD specifications, tolerated
series resistance, driver size and maximum IO ESD
area. The next section proposes a novel layout concept
that improves the robustness of fully silicided MOS
transistors by restoring the body coupling between
adjacent fingers. It represents an area efficient solution
for GOX1 MOS driver protection.
IV. Body coupling concept
In the regular SOI MOS layout there is a complete
isolation of the body regions of the different fingers as
presented on Figure 1. In many technologies the body is
not even connected (‘floating body’). In the case of
body-contacted SOI, different methods exist to connect
the body of the transistors, such as H/T-type gate edge
(depicted in Figure 7) or Partial Trench Isolation (PTI).
In both cases, the body connection occurs only at the
edge, along the transistor length, Moreover, these body
connections at the end of the segments are shorted
together and all connected to the ground potential,
effectively preventing inter-segment and inter-finger
body or base coupling.
P+ P+
P- bulkP+ STI
BOX
P+
N+
STI
A A’
AA’
Figure 7: Standard NMOS device in SOI technology:
layout and cross section for the H-type gate edge
approach.
The purpose of the body coupling concept is to restore
the body coupling between adjacent fingers. In the
standard SOI MOS implementation, a number of
elements block the free flow of charges between adjacent
fingers: the BOX at the bottom, STI and P+ in between
the segments and N+ drain and source junctions (S/D)
between the fingers, depicted in Figure 8, cross section
BB’.
The main idea of the body coupling concept is to create
a ‘channel’ for charges by connecting the body regions
of adjacent driver fingers. It is not possible to create this
channel through the BOX. However, a ‘channel’ or
connection can be implemented by interrupting the N+
source and drain junctions. Different layout approaches
exist to create this ‘channel’ through the N+ junctions:
(1) Interrupt the N+ implant mask with a regular
spacing, leaving active area with only lowly doped Pwell
regions in between (Figure 8, cross section CC’). A
somewhat resistive connection is created in between the
fingers.
6. P- bulkN+ STI
BOX
STI
BB’
N+
P- bulkN+ STI
BOX
STI
CC’
N+
N+
P- bulkN+ STI
BOX
STI
DD’
N+P+
P- bulkN+ STI
BOX
STI
EE’
N+
B
C
D
E
P+ P+
P+ P+
N+
B’
C’
P+
D’
E’
Figure 8: Layout view and cross sections of different
approaches to connect the body regions of the
adjacent fingers. Cross section BB’ represents the
traditional SOI MOS cross section for multi- finger
structures. In cross section CC’, the N+ implantation
is blocked, leaving P- regions. The insertion of P+
islands as in cross section DD’ effectively shorts the
body regions of neighbor fingers. Finally, by locally
adding a poly stripe (EE’) a P-connection is created
between the fingers.
(2) Replace the N+ implant mask by P+ rectangles at a
regular pace. The highly doped P+ creates a low ohmic
connection between the body regions (Figure 8, cross
section DD’).
(3) The first two solutions require a carefully aligned
pattern of silicide block to prevent the electrical
connection between the drain or source junction with
the body regions and a larger gate length in case 2 to
align N+ and P+ masks. A more area efficient solution
consists of the inclusion of (vertical) poly gate regions
(Figure 8, cross section EE’) between the different
fingers on a regular pitch, creating a regular grid-type
poly layout. The gate poly masks the N+ implantation
during processing, creating P- channels under the
vertical gates.
The Body Coupled MOS (BCMOS) layout, depicted in
Figure 9, enhances the transfer of the body potential
between different fingers through the P-channels under
the additional vertical poly stripes. This most area
efficient approach can be mixed easily with the other
approaches (1,2 mentioned above) when the gate of
adjacent fingers is connected to different pre-driver
circuitry.
Figure 10 presents measurement data for Body Coupled
MOS devices with a variation of the vertical poly stripe
pitch. From the IV curves it is evident from the on-
resistance and It2 failure current that the devices with
larger poly pitch (2 and 4um) are not triggered
completely. The performance increases for a small pitch
because this represents improved inter finger body
coupling.
Poly stripe
pitch
Drain
Source
Drain
Source
Drain
Source
gate
NMOS finger width
Bulk
ties
EE’
Figure 9: Layout representation of the Body Coupled
MOS structure. The design is based on the minimum
dimension fully silicided MOS transistor and adds
vertical poly stripes to enhance body coupling
between adjacent fingers. Cross section EE’ is
depicted in Figure 8. The top poly line of the
structure is a ‘dummy’ poly added for improved gate
etch control.
0
0.2
0.4
0.6
0.8
1
0 1 2 3 4 5
current[A]
voltage [V]
Pitch = 1um
Pitch =
4um
Pitch = 2um
Figure 10: TLP IV characteristics for different
vertical poly pitch variations.
The normalized It2 measurement data summarized on
Figure 11 clearly shows the performance improvement
in uniform triggering by restoring the inter finger body
coupling. Also, Table 2 presents a summary of the ESD
performance for the different variations discussed above.
Although the Body Coupled MOS has a lower ESD
performance per perimeter as compared to the silicide
7. blocked variations and larger gate length, there is a
clear area advantage for the novel approach.
0
0.4
0.8
1.2
1.6
0 1 2 3 4 5 6 7 8
It2[mA/um]
vertical poly stripe pitch [um]
Figure 11: Normalized It2 failure current for the
Body Coupled MOS device layout. The performance
is higher for the minimum pitch.
GOX1
ggNMOS
W = 480um
It2/perimeter
[mA/um]
It2/area
[mA/um2
]
Silicide blocked
gate not silicided
DCGS = 1um
Lg = 0.1um
3.5 1.6
Silicide blocked
gate silicided
DCGS = 1um
Lg = 0.1um
2.0 1.0
Larger gate length
Fully silicided
Lg = 0.25um
1.8 2.4
Body Coupled-MOS /
poly stripes - 1 um
pitch
1.6 3.0
Body Coupled-MOS /
poly stripes – 1 um
pitch AND silicide
blocked drain
junction (gate not
silicided)
2.7 2.0
Table 2: Overview of ESD performance for the
GOX1 NMOS transistors in the 90nm SOI
technology. The new layout drastically enhances the
ESD performance per area
When both approaches (BC and silicide blocked
junctions) are combined, the performance per perimeter
is improved due to the micro-ballasting effect of the
silicide blocked junctions. However, the performance
per area is slightly lower due to the strongly increased
area. In the case of the silicide blocked version of the
Body Coupled NMOS device, the influence of the pitch
is much less pronounced.
Conclusions
Minimum size, fully silicided multi-finger MOS
transistors in SOI technology exhibit a low ESD failure
current in part due to the lack of body coupling
necessary for uniform conduction.
The paper presents experimental data on a proprietary
(i.e. non-foundry), advanced 90nm SOI technology and
compares different layout methods such as silicided
blocked junctions and gate length variations to improve
the ESD robustness of NMOS structures.
A novel layout concept is introduced that enhances the
uniform triggering by restoring the body coupling. The
concept transforms the weak fully silicided transistors
into robust devices without the need for the silicide
block mask and without an increase of the area required
for the fully silicided drivers. By connecting the body
regions, the body potential of the triggered fingers can
speed up triggering of adjacent un triggered fingers.
The Body Coupled MOS has been shown to have the
highest ESD performance normalized per area.
Acknowledgement
The authors acknowledge the financial support of the
Flemish Government through IWT030029 for research
on ESD protection for advanced CMOS SOI
technologies in the frame of the Medea+ T206 project.
Technical support and suggestions for improvement
from the mentor Christian Russ are very much
appreciated.
References
[1] B. Keppens et al., “Active- Area- Segmentation
(AAS) Technique for Compact, ESD Robust,
Fully Silicided NMOS design”, EOS/ESD 2003.
[2] Y.-C. Tseng et al., “Local Floating Body Effect
in Body-grounded SO1 nMOSFETs”, SOI
conference 1997
[3] M. G. Khazhinsky et al., “ESD protection for
advanced CMOS SOI Technologies”, EOS/ESD
2005.
[4] A. Deckelmann et al., "Optimization of LGate
for ggNMOS ESD protection devices fabricated
on Bulk- and SOI- Substrates, using Process
and Device Simulation", SISPAD 2003.
8. [5] M. Mergens et al., “Multi-Finger Turn-on
Circuits and Design Techniques for enhanced
ESD performance and width-scaling”,
EOS/ESD 2001
[6] G. Boselli et al., “Analysis of ESD Protection
Components in 65nm CMOS Technology:
Scaling Perspective and Impact on ESD Design
Window”, EOS/ESD 2005
[7] M. Stockinger et al., “Boosted and Distributed
Rail Clamp Networks for ESD Protection in
Advanced CMOS Technologies,” EOS/ESD
2003
[8] O. Marichal et al., “SCR based ESD protection
in nanometer SOI technologies”, EOS/ESD
2005
[9] Y. Oomura, “A lateral, unidirectional, bipolar-
type insulated-gate transistor - A novel
semiconductor device”, Appl. Phys. Lett 40(6),
March 1982
[10] C. Russ, et al. “GGSCRs: GGNMOS
Triggered Silicon Controlled Rectifiers for ESD
Protection in Deep Sub-Micron CMOS
Processes”, EOS/ESD 2001.
[11] M. Mergens, et al., “Diode-Triggered SCR
(DTSCR) for RFESD Protection of BiCMOS
SiGe HBTs and CMOS Ultra-Thin Gate
Oxide”, IEDM 2003
[12] B. Van Camp et al., “Current detection
trigger scheme for SCR based ESD protection
of Output drivers in CMOS technologies
avoiding competitive triggering,” EOS/ESD
2005