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Device Modeling Report




COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: 1MB05-120
MANUFACTURER: Fuji Electric
* REMARK: Free-Wheeling Diode (Standard Model)




                     Bee Technologies Inc.




       All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                      1
Transfer Characteristics

Circuit Simulation result


                14A


                12A


                10A


                 8A


                 6A


                 4A


                 2A


                 0A
                      0V              4V           8V           12V   16V      20V
                           I(U1:C)
                                                        V_VGE




Evaluation circuit




                                              U1
                                      1MB05-120
                                                                      VCE
                                                                      5Vdc
                                     VGE
                                     15Vdc




                                                    0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                     2
Comparison Graph

Simulation result




Comparison table


Test condition: VCE =5 (V)


                                             VGE (V)
               IC (A)                                                       %Error
                               Measurement            Simulation
                     0.350                8.000                 8.082              1.02
                     6.600               10.000                 9.970              -0.30
                    13.400               12.000               12.037               0.31




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           3
Fall Time Characteristics

Circuit Simulation result


                 5.0A

                 4.5A

                 4.0A

                 3.5A

                 3.0A

                 2.5A

                 2.0A

                 1.5A

                 1.0A

                 0.5A

                     0A
                     2.0us               3.0us        4.0us           5.0us        6.0us
                         I(RL)
                                                      Time




Evaluation circuit




                                                                          RL
                                             Rg       U1                  119.5
                                                      1MB05-120
                            V1 = -15
                            V2 = 15          330
                            TD = 0      V1
                            TR = 10n                                      VCE
                            TF = 10n                                      600Vdc
                            PW = 3u
                            PER = 20u

                                                       0




Test condition: IC=5 (A), VCC=600 (V)


       Parameter        Unit            Measurement               Simulation           %Error
            tf           us                        0.200                  0.201            0.357




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                   4
Gate Charge Characteristics

Circuit Simulation result


                 25V




                 20V




                 15V




                 10V




                     5V




                     0V
                          0              20n            40n                60n          80n        100n
                              V(W1:1)
                                                                Time*1mA


Evaluation circuit

                                                                                   V2



                                                                                   0

                                                                   U1                               I1
                                                           1MB05-120                      D2
                                                                                          Dbreak    5

                     I1 = 0                      W1
                     I2 = 1m                       +
                     TF = 10n                                                                       V3
                     TR = 10n                      -
                     TD = 0        I2            W
                     PER = 500m                  IOFF = 100uA                                       600
                     PW = 5m                     ION = 0A


                                                                            0




Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V)


         Parameter                Unit         Measurement                       Simulation              %Error
             Qge                  nc                       12.000                       12.000             0.000
             Qgc                  nc                       26.000                       25.565            -1.673
              Qg                  nc                       55.000                       55.623             1.133

                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                                   5
Saturation Characteristics

Circuit Simulation result

                 10A




                     8A




                     6A




                     4A




                     2A




                     0A
                          0V       0.5V         1.0V    1.5V     2.0V     2.5V   3.0V      3.5V   4.0V
                               I(IC)
                                                                V(IC:-)




Evaluation circuit




                                                           U1
                                                   1MB05-120
                                                                                    IC
                                                                                    0Adc
                                          VGE
                                15Vdc




                                                                0




                     All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                         6
Comparison Graph

Simulation result




Comparison table


Test condition: VGE =15 (V)

                                        VF (V)
                IF(A)                                                     %Error
                              Measurement      Simulation
                        2.0          2.000             2.01                         0.35
                        4.0          2.430             2.41                        -0.71
                        6.0          2.800             2.81                         0.35
                        8.0               3.200                 3.20               0.12
                      10.0                3.600                 3.60               -0.09




                    All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                           7
Output Characteristics

Circuit Simulation result



                     10A
                                                                       20V 15V 12V


                      8A
                                                                                         10V

                      6A



                      4A



                      2A

                                                                                    VGE=8V
                      0A
                           0V          1.0V          2.0V           3.0V          4.0V     5.0V
                                I(U1:C)
                                                            V_VCE



Evaluation circuit




                                                      U1                           VCE
                                              1MB05-120                    5Vdc


                                15Vdc   VGE




                                                            0




                      All Rights Reserved Copyright (C) Bee Technologies Inc. 2009
                                                                                                  8

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SPICE MODEL of 1MB05-120 (Professional+FWDS Model) in SPICE PARK

  • 1. Device Modeling Report COMPONENTS: Insulated Gate Bipolar Transistor (IGBT) PART NUMBER: 1MB05-120 MANUFACTURER: Fuji Electric * REMARK: Free-Wheeling Diode (Standard Model) Bee Technologies Inc. All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 1
  • 2. Transfer Characteristics Circuit Simulation result 14A 12A 10A 8A 6A 4A 2A 0A 0V 4V 8V 12V 16V 20V I(U1:C) V_VGE Evaluation circuit U1 1MB05-120 VCE 5Vdc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 2
  • 3. Comparison Graph Simulation result Comparison table Test condition: VCE =5 (V) VGE (V) IC (A) %Error Measurement Simulation 0.350 8.000 8.082 1.02 6.600 10.000 9.970 -0.30 13.400 12.000 12.037 0.31 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 3
  • 4. Fall Time Characteristics Circuit Simulation result 5.0A 4.5A 4.0A 3.5A 3.0A 2.5A 2.0A 1.5A 1.0A 0.5A 0A 2.0us 3.0us 4.0us 5.0us 6.0us I(RL) Time Evaluation circuit RL Rg U1 119.5 1MB05-120 V1 = -15 V2 = 15 330 TD = 0 V1 TR = 10n VCE TF = 10n 600Vdc PW = 3u PER = 20u 0 Test condition: IC=5 (A), VCC=600 (V) Parameter Unit Measurement Simulation %Error tf us 0.200 0.201 0.357 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 4
  • 5. Gate Charge Characteristics Circuit Simulation result 25V 20V 15V 10V 5V 0V 0 20n 40n 60n 80n 100n V(W1:1) Time*1mA Evaluation circuit V2 0 U1 I1 1MB05-120 D2 Dbreak 5 I1 = 0 W1 I2 = 1m + TF = 10n V3 TR = 10n - TD = 0 I2 W PER = 500m IOFF = 100uA 600 PW = 5m ION = 0A 0 Test condition: VCC=600 (V), IC=5 (A), VGE=15 (V) Parameter Unit Measurement Simulation %Error Qge nc 12.000 12.000 0.000 Qgc nc 26.000 25.565 -1.673 Qg nc 55.000 55.623 1.133 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 5
  • 6. Saturation Characteristics Circuit Simulation result 10A 8A 6A 4A 2A 0A 0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V 3.5V 4.0V I(IC) V(IC:-) Evaluation circuit U1 1MB05-120 IC 0Adc VGE 15Vdc 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 6
  • 7. Comparison Graph Simulation result Comparison table Test condition: VGE =15 (V) VF (V) IF(A) %Error Measurement Simulation 2.0 2.000 2.01 0.35 4.0 2.430 2.41 -0.71 6.0 2.800 2.81 0.35 8.0 3.200 3.20 0.12 10.0 3.600 3.60 -0.09 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 7
  • 8. Output Characteristics Circuit Simulation result 10A 20V 15V 12V 8A 10V 6A 4A 2A VGE=8V 0A 0V 1.0V 2.0V 3.0V 4.0V 5.0V I(U1:C) V_VCE Evaluation circuit U1 VCE 1MB05-120 5Vdc 15Vdc VGE 0 All Rights Reserved Copyright (C) Bee Technologies Inc. 2009 8