SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK
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This document provides a device modeling report for a power MOSFET and includes: 1) Summaries of the MOSFET and body diode SPICE models and test results for various characteristics like transconductance, capacitance, switching times and more. 2) Circuit simulations and comparison tables show good agreement between measurements and simulations. 3) Modeling details are also provided for an ESD protection diode with its zener voltage characteristic shown.
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SPICE MODEL of 2SK2412 (Professional+BDP Model) in SPICE PARK
- 1. Device Modeling Report COMPONENTS: Power MOSFET (Professional Model ) PART NUMBER: 2SK2412 MANUFACTURER: NEC REMARK: N Channel Model Body Diode (Professional Model) / ESD Protection Diode Bee Technologies Inc. All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 2. MOSFET MODEL PSpice model Model description parameter LEVEL L Channel Length W Channel Width KP Transconductance RS Source Ohmic Resistance RD Ohmic Drain Resistance VTO Zero-bias Threshold Voltage RDS Drain-Source Shunt Resistance TOX Gate Oxide Thickness CGSO Zero-bias Gate-Source Capacitance CGDO Zero-bias Gate-Drain Capacitance CBD Zero-bias Bulk-Drain Junction Capacitance MJ Bulk Junction Grading Coefficient PB Bulk Junction Potential FC Bulk Junction Forward-bias Capacitance Coefficient RG Gate Ohmic Resistance IS Bulk Junction Saturation Current N Bulk Junction Emission Coefficient RB Bulk Series Resistance PHI Surface Inversion Potential GAMMA Body-effect Parameter DELTA Width effect on Threshold Voltage ETA Static Feedback on Threshold Voltage THETA Modility Modulation KAPPA Saturation Field Factor VMAX Maximum Drift Velocity of Carriers XJ Metallurgical Junction Depth UO Surface Mobility All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 3. Transconductance Characteristics Circuit Simulation Result 17 Measurement 15 Simullation TRANSCONDUCTANCE Gfs(s) 13 11 9 7 5 3 1 0 2 4 6 8 10 DRIAN CURRENT ID (A) Comparison table gfs(s) Id(A) Error(%) Measurement Simulation 0.2 2.174 2.240 3.040 0.5 3.650 3.700 1.380 1 5.155 5.200 0.880 2 7.180 7.092 -1.223 5 11.300 11.111 -1.672 10 16.300 15.823 -2.928 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 4. Vgs-Id Characteristics Circuit Simulation Result 20A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V 4.0V 5.0V 6.0V 7.0V 8.0V I(V2) V_VGS Evaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 5. Comparison Graph Circuit Simulation Result 100 Measurement Simulation ID - Drain Current - A 10 1 0.1 0 2 4 VGS - Gate to Source Voltage - V Comparison table VGS(V) ID(A) Error (%) Measurement Simulation 0.1 2.000 1.932 -3.390 0.2 2.050 1.985 -3.171 0.5 2.120 2.091 -1.382 1 2.200 2.210 0.436 2 2.350 2.378 1.196 5 2.650 2.713 2.389 10 3.000 3.093 3.093 20 3.600 3.632 0.900 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 6. *Rds(on) Characteristic Circuit Simulation result 10A 9A 8A 7A 6A 5A 4A 3A 2A 1A 0A 0V 100mV 200mV 300mV 400mV 500mV I(V2) V_VDS Evaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 10Vdc 0 Simulation Result ID=10, VGS=10V Measurement Simulation Error (%) R DS (on) 50 m 50 m 0.00 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 7. Gate Charge Characteristic Circuit Simulation result 16V 14V 12V 10V 8V 6V 4V 2V 0V 0 5n 10n 15n 20n 25n 30n 35n 40n V(W1:3) Time*1mA Evaluation circuit Vsense U1 2SK2412_pro I1 D1 W1 Dbreak 20Adc + TD = 0 - I2 ION = 0A W IOFF = 1mA VD 48Vdc 0 Simulation Result VDD=48V,ID=20A Measurement Simulation Error (%) ,VGS=10V Qgs nC 2.70 2.62 -2.96 Qgd nC 8.90 8.96 0.67 Qg nC 27.00 27.03 0.11 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 8. Capacitance Characteristic Measurement Simulation Simulation Result Cbd(pF) VDS(V) Error(%) Measurement Simulation 1 590.000 588.500 -0.2542 2 490.000 489.200 -0.1633 5 380.000 381.224 0.3221 10 300.000 299.250 -0.2500 20 240.000 230.995 -3.7521 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 9. Switching Time Characteristic Circuit Simulation result 20V 16V 12V 8V 4V 0V -4V -8V 0.93us 0.96us 0.99us 1.02us 1.05us 1.08us 1.11us V(L3:2) V(Vsense:+)/3.1 Evaluation circuit Time Vsense RL 3.0 U1 R1 L3 2SK2412_pro 10 20nH V1 = 0 VDD V2 = 20 V1 30Vdc TD = 1u R2 TR = 20n TF = 20n 10 PW = 10u PER = 20u 0 Simulation Result ID=10A, VDD=30V Measurement Simulation Error(%) VGS=0/10V td(on) ns 15.000 14.987 -0.087 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 10. Output Characteristic Circuit Simulation result 80A 10.0V 70A 6.0V 60A 50A 40A VGS=4.0V 30A 20A 10A 0A 0V 2V 4V 6V 8V 10V 12V I(V2) V_VDS Evaluation circuit V2 U7 2SK2412 VDS 10Vdc VGS 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 11. BODY DIODE SPICE MODEL Forward Current Characteristic Circuit Simulation Result 100A 10A 1.0A 100mA 0V 1.0V 2.0V 3.0V I(R1) V_V1 Evaluation Circuit R1 0.01m U1 2SK2412 V1 0Vdc 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 12. Comparison Graph Circuit Simulation Result 100 Measurement Simulation Diode Forward Current - A 10 1 0.1 0 1 2 Source to Drain Voltage - V Simulation Result VDS(V) IDR(A) Measurement Simulation %Error 0.1 0.620 0.620 -0.032 0.2 0.640 0.642 0.359 0.5 0.680 0.676 -0.574 1 0.710 0.708 -0.268 2 0.750 0.751 0.173 5 0.840 0.846 0.679 10 0.980 0.975 -0.561 20 1.200 1.202 0.125 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 13. Reverse Recovery Characteristic Circuit Simulation Result 400mA 300mA 200mA 100mA -0mA -100mA -200mA -300mA -400mA 0.8us 1.0us 1.2us 1.4us 1.6us 1.8us I(R1) Time Evaluation Circuit R1 50 U1 2SK2412_pro V1 = -9.4V V1 V2 = 10.7V TD = 160n TR = 10ns TF = 5.7ns PW = 1us PER = 50us 0 Compare Measurement vs. Simulation Measurement Simulation Error (%) trj ns 60.10 59.63 -0.79 trb ns 69.70 69.66 -0.06 trr ns 129.80 129.28 -0.40 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 14. Reverse Recovery Characteristic Reference Measurement Trj=60.10(ns) Trb=69.70(ns) Conditions:Ifwd=lrev=0.2(A),Rl=50 Example Relation between trj and trb All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 15. ESD PROTECTION DIODE SPICE MODEL Zener Voltage Characteristic Circuit Simulation Result 10mA 9mA 8mA 7mA 6mA 5mA 4mA 3mA 2mA 1mA 0A 0V 10V 20V 30V 40V 50V 60V 70V 80V 90V I(R1) V_V1 Evaluation Circuit R1 0.01m open open V1 0Vdc Ropen U1 M2SK2412 100MEG 0 0 All Rights Reserved Copyright (c) Bee Technologies Inc. 2007
- 16. Zener Voltage Characteristic Reference Measurement All Rights Reserved Copyright (c) Bee Technologies Inc. 2007