Diode Model Evaluation Manual

1. Diode Model Evaluation Manual
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Contents
1. Forward Characteristic (IV)
2. Capacitance Characteristic (CV)
3. Reverse Recovery Characteristic (Trr)

2. 1. Forward Characteristic (IV)
Evaluation Circuit Simulation Result
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V_V1
0V 0.4V 0.8V 1.2V 1.6V 2.0V 2.4V 2.8V
I(R1)
100mA
1.0A
10A
R1
0.01m
V1
0Vdc
0
D1
DS3L60
Draw circuit as shown in the figure above. The circuit consists of a DC voltage source V1,
a very small resistor R1, and the diode.

3. 1. Forward Characteristic (IV)
Simulation Settings 【Reference】 Datasheet
Select DC Sweep and enter the parameters as shown. The Voltage source is V1, that is
swept to match the device characteristics informed by the datasheet, from Start value=0
to End value=2V with the Increment=0.01.
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Sweep: 0 ~ 2V

4. 1. Forward Characteristic (IV)
The plot axis is set to match the datasheet scale as X:0 to 2.8 [Linear
scale] and Y: 0.1 to 10 [Log scale]
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5. 2. Capacitance Characteristic (CV)
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Draw circuit as shown in the figure above, that consist of a VPULSE V1 as a DC bias
source, a VDC V2 (0V) as a current sensor , and the diode.
Evaluation Circuit Simulation Result
D1
DS3L60
V2
0Vdc
V1TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 600V
Rev erse
0
V(Reverse)
1.0V 10V 100V500mV 400V
I(V2)/(600V/1u)
10p
100p
2.0p
200p

6. 2. Capacitance Characteristic (CV)
V1: Initial voltage
V2: Pulse voltage
TD: Delay time
TR: Rise time
TF: Fall time
PW: Pulse width
PER: Period
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V1TD = 0
TF = 50ns
PW = 5us
PER = 10us
V1 = 0
TR = 1u
V2 = 600V
The DC bias maximum voltage is set by entering V2=600V, the other parameter are the
default value, as shown.

7. 2. Capacitance Characteristic (CV)
Select Time Domain(Transient) and enter the parameters as shown (This is
the default setting, usually can be use with any diode).
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Simulation Settings

8. 2. Capacitance Characteristic (CV)
TRACE: V(Reverse), as the X Axis Variable, to change trace expression from time to the
reverse voltage.
TRACE: I(V2)/(600V*/1u), to show the capacitance curve
(*600V is the V2 value of the pulse source).
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V(Reverse)
1.0V 10V 100V500mV 400V
I(V2)/(600V/1u)
10p
100p
2.0p
200p

9. 3. Reverse Recovery Characteristic
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0
V1TD = 12ns
TF = 12ns
PW = 1us
PER = 100us
V1 = -9.1V
TR = 10ns
V2 = 10.8V
R1
50
D1
DS3L60
Evaluation Circuit Simulation Result
Time
0.96us 1.00us 1.04us 1.08us 1.12us 1.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
Draw circuit as shown in the figure above, that consist of a VPULSE V1 as a pulse
source, a Resistor R1=50, and the diode.

10. 3. Reverse Recovery Characteristic
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V1 is the value near 10V, used to adjust the IR to be -200mA.
V2 is the value near 10V, used to adjust the IF to be 200mA .
TF (Fall Time) is used to adjust the slope.
V1
TD = 12ns
TF = 12ns
PW = 1us
PER = 100us
V1 = -9.1V
TR = 10ns
V2 = 10.8V
Time
0.96us 1.00us 1.04us 1.08us 1.12us 1.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA
adjust V1
adjust V2
IF
IR

11. 3. Reverse Recovery Characteristic
simulation Result 【Reference】 Measurement Waveform
The scale is set to match the measurement waveform for easily comparison.
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Time
0.96us 1.00us 1.04us 1.08us 1.12us 1.16us
I(R1)
-400mA
-300mA
-200mA
-100mA
-0mA
100mA
200mA
300mA
400mA