The document provides a device modeling report for an Insulated Gate Bipolar Transistor (IGBT) with part number GT20J321 manufactured by TOSHIBA. It includes summaries of circuit configurations, transfer characteristics, gate charge characteristics, and other key electrical behaviors and parameters based on circuit simulations and comparisons to manufacturer measurements.

1. Device Modeling Report
COMPONENTS: Insulated Gate Bipolar Transistor (IGBT)
PART NUMBER: GT20J321
MANUFACTURER: TOSHIBA
*REMARK: Free-Wheeling Diode Professional Model
Bee Technologies Inc.
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
1

2. Circuit Configuration
Collector
Gate
Emitter
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
2

3. Transfer Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 4V 8V 12V 16V 20V
I(U1:C)
V_VGE
Evaluation circuit
U2
DGT20J321_P
VCE
5Vdc
VGE U1
15Vdc GT20J321
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
3

4. Comparison Graph
Simulation result
Comparison table
Test condition: VCE =5 (V)
VGE (V)
IC (A) %Error
Measurement Simulation
1 6.300 6.355 0.87
2 6.600 6.551 -0.75
5 7.000 6.953 -0.68
10 7.450 7.427 -0.31
20 8.100 8.138 0.47
30 8.650 8.716 0.76
40 9.200 9.226 0.28
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
4

5. Fall Time Characteristics
Circuit Simulation result
400V
300V
200V
100V
0V
V(U1:C)
20V
SEL>>
0V
V(U1:G)
24A
16A
8A
0A
9.4us 9.8us 10.2us 10.6us 11.0us 11.4us
I(U1:C)
Time
Evaluation circuit
U4
RG2 DGT20J321_P
-VGE
15Vdc33 U3 L1
GT20J321 20mH
2 1
IC = 20
VCE
300
U2
Rg DGT20J321_P
V1 = 0
V2 = 15
TD = 5u V1 33
TR = 10n U1
TF = 10n GT20J321
PW = 4.998u
PER = 100u
0
Test condition: IC=20 (A), VCC=300 (V), VGE=15 (V), RG=33(Ω)
Parameter Unit Measurement Simulation %Error
tf us 0.040 0.039 -3.555
tdoff us 0.240 0.245 2.109
toff us 0.340 0.348 2.226
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
5

6. Gate Charge Characteristics
Circuit Simulation result
20V
16V
12V
8V
4V
0V
0 20n 40n 60n 80n 100n 120n 140n
V(W1:1)
Time*1mA
Evaluation circuit
V2
0
IC
U2 D2
DGT20J321_P Dbreak 20
I1 = 0
I2 = 1m W1 W
TF = 10n + IOFF = 100uA U1 VCC
TR = 10n ION = 0A GT20J321
TD = 0 I2 - 300
PER = 700m
PW = 7m
0
Test condition: VCC=300 (V), IC=20 (A), VGE=15 (V)
Parameter Unit Measurement Simulation %Error
Qge nc 22.000 21.585 -1.886
Qgc nc 38.000 37.248 -1.979
Qg nc 105.000 106.556 1.482
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
6

7. Saturation Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(IC)
V(IC:-)
Evaluation circuit
U2
DGT20J321_P
IC
VGE U1
15Vdc GT20J321
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
7

8. Comparison Graph
Simulation result
Comparison table
Test condition: VGE =15 (V)
VCE (V)
Ic(A) %Error
Measurement Simulation
1 0.950 0.997 4.99
2 1.050 1.086 3.38
5 1.300 1.301 0.10
10 1.600 1.597 -0.18
20 2.050 2.053 0.14
30 2.400 2.398 -0.07
40 2.700 2.700 0.01
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
8

9. Output Characteristics
Circuit Simulation result
40A
20V 15V 9V
30A
20A
8V
10A
VGE=7V
0A
0V 1.0V 2.0V 3.0V 4.0V 5.0V
I(R1)
VCE
Evaluation circuit
R1
0.001m
CE
PARAMETERS: U2 VCE
VGE = 0 DGT20J321_P
VGE U1
{VGE} GT20J321
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
9

10. FWD Forward Current Characteristics
Circuit Simulation result
40A
30A
20A
10A
0A
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(Vsense)
V(EC)
Evaluation circuit
Vsense
V1
EC
0Vdc
U2 0Vdc
DGT20J321_P
V2 U1
GT20J321
0
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
10

11. Comparison Graph
Simulation result
Comparison table
VF (V)
IF(A) %Error
Measurement Simulation
1 0.850 0.850 0.00
2 0.950 0.947 -0.29
5 1.110 1.115 0.47
10 1.300 1.298 -0.14
20 1.560 1.562 0.12
30 1.780 1.774 -0.33
40 1.960 1.963 0.17
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
11

12. Reverse Recovery Characteristics
Circuit Simulation result
20A
16A
12A
8A
4A
0A
-4A
-8A
4.9us 5.1us 5.3us 5.5us 5.7us 5.9us
I(FWD)
Time
Evaluation circuit
L2
1 2
2.90uH
U3
R1 DGT20J321_P
43
U4
GT20J321
-VGE
FWD L1
15
20mH
2 1
C IC = 20
VCE
300
U2
Rg DGT20J321_P
V1 = 0
V2 = 15
TD = 5u V1 33
TR = 10n U1
TF = 10n GT20J321
PW = 4.998u
PER = 100u
0
Test condition: VCC=300 (V), IF=20 (A) –di/dt=100 A/usec
Parameter Unit Measurement Simulation %Error
trr ns 110.000 112.303 2.090
Irr A 4.300 4.500 4.650
All Rights Reserved Copyright (C) Bee Technologies Inc. 2011
12