SPICE MODEL of IDH04G65C5 (Professional Model) in SPICE PARK. English Version is http://www.spicepark.net. Japanese Version is http://www.spicepark.com by Bee Technologies.

1. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
1
Device Modeling Report
Bee Technologies Inc.
COMPONENTS: SiC Schottky Barrier Diode
PART NUMBER: IDH04G65C5
MANUFACTURER: Infineon
REMARK: Professional Model

2. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
2
Circuit Configuration
DIODE MODEL PARAMETERS
PSpice
model
parameter
Model description
IS Saturation Current
N Emission Coefficient
RS Series Resistance
IKF High-injection Knee Current
CJO Zero-bias Junction Capacitance
M Junction Grading Coefficient
VJ Junction Potential
ISR Recombination Current Saturation Value
BV Reverse Breakdown Voltage(a positive value)
IBV Reverse Breakdown Current(a positive value)
TT Transit Time
EG Energy-band Gap

3. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
3
U1
IDH04G65C5
R1
0.01m
V1
0Vdc
0
R2
100MEG
V _ V 1
0V 0.5V 1.0V 1.5V 2.0V 2.5V 3.0V
I(R1)
0A
1.0A
2.0A
3.0A
4.0A
5.0A
6.0A
7.0A
8.0A
Forward Current Characteristics
Circuit Simulation result
Evaluation circuit

4. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
4
Comparison Graph Circuit Simulation result
Comparison table
IF (A) VF (V) %Error Measurement Simulation 0.1 0.924 0.925 0.11 0.2 0.950 0.955 0.53 0.5 1.020 1.017 -0.29 1 1.100 1.098 -0.18 2 1.240 1.242 0.16 5 1.640 1.645 0.30 8 2.040 2.036 -0.20

5. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
5
V ( R )
100mV 1.0V 10V 100V 1.0KV
I(V2)/(650V/10u)
0
20p
40p
60p
80p
100p
120p
140p
160p
180p
0
R
V1
TD = 0
TF = 100ns
PW = 100us
PER = 10m
V1 = 0
TR = 10us
V2 = 650
V2
0Vdc
R2
100MEG
U1
IDH04G65C5
Junction Capacitance Characteristic
Circuit Simulation result
Evaluation circuit

6. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
6
Comparison Graph Circuit Simulation result
Comparison table
VR(V) C (pF) %Error Measurement Simulation 0.1 155.000 152.520 -1.60 0.2 152.000 149.290 -1.78 0.5 142.000 140.090 -1.35 1 129.000 127.302 -1.32 2 110.000 108.749 -1.14 5 82.000 78.420 -4.37 10 59.880 57.000 -4.81 20 42.500 40.700 -4.24 50 28.880 27.450 -4.95 100 23.000 22.000 -4.35 200 19.000 18.860 -0.74 500 17.500 16.800 -4.00

7. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
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V _ V 1
100V 200V 300V 400V 500V 600V
I(R1)
1.0nA
10nA
100nA
1.0uA
10uA
R4
10G
U1
IDH04G65C5
V1
0Vdc
R1
100m
0
Reverse Characteristic
Circuit Simulation result
Evaluation circuit

8. All Rights Reserved Copyright (C) Bee Technologies Inc. 2014
8
Comparison Graph Circuit Simulation result
Comparison table
IR (A) VR (V) %Error Measurement Simulation 1.00E-09 470.000 449.270 -4.41 1.00E-08 547.000 545.900 -0.20 2.00E-07 650.000 649.540 -0.07